MWI 25127(T) IGBT Module Sixpack Short Circuit SO Capability Square RBSO I C25 = 50 CES = 1200 CE(sat) typ. = 2.2 Part name (Marking on product) MWI25127 MWI25127T 13 T version 1 5 9 T 2 10 1 15 14 E72873 T 3 7 11 4 8 12 17 Features: NPT IGBT technology low saturation voltage positive temperature coeffi cient for easy paralleling low switching losses switching frequency up to 30 khz square RBSO, no latch up high short circuit capability MOS input, voltage controlled ultra fast free wheeling diodes solderable pi for PCB mounting space savings reduced protection circuits pplication: C motor control C servo and robot drives power supplies Package: UL registered Industry standard E2pack package with copper base plate package designed for wave soldering 2017 IXYS ll rights reserved 1
MWI 25127(T) IGBTs CES collector emitter voltage T J = 25 C to 150 C 1200 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient I C25 collector current T C = 25 C I C80 T C = 80 C P tot total power dissipation T C = 25 C 225 W CE(sat) collector emitter saturation voltage I C = 25 ; GE = 15 T J = 25 C T J = 125 C 2.2 2. ±20 ±30 50 35 2.7 GE(th) gate emitter threshold voltage I C = 1 m; GE = CE T J = 25 C 4.5.5 I CES collector emitter leakage current CE = CES ; GE = 0 T J = 25 C T J = 125 C 2 2 m m I GES gate emitter leakage current CE = 0 ; GE = ±20 200 n C ies input capacitance CE = 25 ; GE = 0 ; f = 1 MHz 150 pf Q G(on) total gate charge CE = 00 ; GE = 15 ; I C = 35 120 nc t d(on) t r t d(off) t f E on E off turnon delay time current rise time turnoff delay time current fall time turnon energy per pulse turnoff energy per pulse inductive load T J = 125 C CE = 00 ; I C = 25 GE = ±15 ; R G = 47 Ω I CM reverse bias safe operating area RBSO; GE = ±15 ; R G = 47 Ω L = 100 µh; clamped induct. load T J = 125 C CEmax = CES L S di/dt t SC (SCSO) short circuit safe operating area CE = CES ; GE = ±15 ; T J = 125 C R G = 47 Ω; nonrepetitive 100 70 500 70 3.8 2.8 mj mj 70 10 µs R thjc thermal resistance junction to case (per IGBT) 0.55 K/W Diodes RRM max. repetitve reverse voltage T J = 150 C 1200 I F25 forward current T C = 25 C I F80 T C = 80 C F forward voltage I F = 25 ; GE = 0 T J = 25 C T J = 125 C I RM t rr E rec(off) max. reverse recovery current reverse recovery time reverse recovery energy R = 00 di F /dt = 400 /µs T J = 125 C I F = 25 ; GE = 0 2.3 1.7 50 33 2.7 R thjc thermal resistance junction to case (per diode) 1.19 K/W 20 200 1.3 T C = 25 C unless otherwise stated mj 2017 IXYS ll rights reserved 2
MWI 25127(T) Module T J T JM T stg operating temperature max. virtual junction temperature storage temperature ISOL isolation voltage I ISOL < 1 m; 50/0 Hz 2500 ~ M d mounting torque (M4) 2.7 3.3 Nm d S d creep distance on surface strike distance through air Weight 180 g R thch thermal resistance case to heatsink with heatsink compound 0.02 K/W 40 40 125 150 125 C C C mm mm Temperature Seor NTC R 25 resistance T C = 25 C 4.75 5.0 B 25/50 3375 5.25 kω K Equivalent Circuits for Simulation I 0 R 0 0 R 0 0 R 0 R 1 R 2 C 1 C 2 IGBT Diode R1 R2 R3 R4 C1 C2 C3 C4 T1 T T J = 125 C 1.5 40.7 D1 D T J = 125 C 1.3 1 n t Zth( t) = R i 1 exp Ä i i= 1 Ä i = R i C i IGBT Diode mω mω 2017 IXYS ll rights reserved 3
MWI 25127(T) Outline Drawing Dimeio in mm (1 mm = 0.0394 ) 0.8 ±0.2 15 ±1 1.2 ±0.05 Ø 5.5 +0.1 0.3 0.8 ±0.05 Ø Ø 2.5 Ø 2.1 1.5 ±0.3 Ø 0.4 B Product Marking Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MWI 15127 MWI15127 Box 10 482730 Standard MWI 15127T MWI15127T Box 10 480819 2017 IXYS ll rights reserved 4
MWI 25127(T) Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. trafer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. Typ. turn off characteristics of free wheeling diode 2017 IXYS ll rights reserved 5
MWI 25127(T) Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. traient thermal impedance 2017 IXYS ll rights reserved