MMG15WB17H6EN 17 15 Four-Pack Module February 216 ersion 1 RoHS Compliant PRODUCT FETURES IGBT3 CHIP(17 Trench+Field Stop technology) Low turn-off losses, short tail current CE(sat) with positive temperature coefficient DIODE CHIP(17 EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery PPLICTIONS High frequency switching application Medical applicatio Motion/servo control UPS systems IGBT-inverter BSOLUTE MXIMUM RTINGS(T C =25 C unless otherwise specified) Symbol Parameter/Test Conditio alues CES Collector Emitter oltage T J =25 17 GES Gate Emitter oltage ±2 I C DC Collector Current T C =25, T Jmax =175 23 T C =95, T Jmax =175 15 I CM Repetitive Peak Collector Current tp=1ms 3 P tot Power Dissipation Per IGBT T C =25, T Jmax =175 125 W Diode-inverter BSOLUTE MXIMUM RTINGS (T C =25 C unless otherwise specified) Symbol Parameter/Test Conditio alues RRM Repetitive Reverse oltage T J =25 17 I F() verage Forward Current 15 I FRM Repetitive Peak Forward Current tp=1ms 3 I 2 t, t=1ms, R = 38 2 S MacMic Science & Technology Co., Ltd. 1 dd:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R.of China Tel.:+86-519-8516378 Fax:+86-519-85162291 Post Code:21322 Website:www.macmicst.com
MMG15WB17H6EN IGBT-inverter ELECTRICL CHRCTERISTICS (T C =25 C unless otherwise specified) Symbol Parameter/Test Conditio Min. Typ. Max. GE(th) Gate Emitter Threshold oltage CE = GE, I C =6m 5.2 5.8 6.4 CE(sat) Collector Emitter I C =15, GE =15, T J =25 2 2.45 Saturation oltage I C =15, GE =15, 2.4 I CES Collector Leakage Current CE =17, GE =, T J =25 3 CE =17, GE =, 2 I GES Gate Leakage Current CE =, GE =±15, T J =25-4 4 R gint Integrated Gate Resistor 5 Q g Gate Charge CE =9, I C =15, GE =±15 1.7 C ies Input Capacitance 13.5 CE =25, GE =, f =1MHz C res Reverse Trafer Capacitance 45 t d(on) Turn on Delay Time CC =9,I C =15 T J =25 28 R G =9.1Ω, 3 t r Rise Time GE =±15, T J =25 5 Inductive Load 66 t d(off) Turn off Delay Time CC =9,I C =15 T J =25 81 R G =9.1Ω, 1 t f Fall Time GE =±15, T J =25 18 Inductive Load T J=125 3 E on Turn on Energy CC =9,I C =15 T J =25 33 R G =9.1Ω, 48 E off Turn off Energy GE =±15, T J =25 32 Inductive Load 47 I SC Short Circuit Current tpsc 1µS, GE =15, CC =1 6 R thjc Junction to Case Thermal Resistance ( Per IGBT).12 m m n Ω µc nf pf K /W Diode-inverter ELECTRICL CHRCTERISTICS (T C =25 C unless otherwise specified) Symbol Parameter/Test Conditio Min. Typ. Max. F t rr Forward oltage I F =15, GE =, T J =25 1.8 2.2 I F =15, GE =, 1.9 Reverse Recovery Time 55 I I RRM Max. Reverse Recovery Current F =15, R =9 19 di F /dt=-215/μs Q RR Reverse Recovery Charge T 65.5 J =125 E rec Reverse Recovery Energy 36 R thjcd Junction to Case Thermal Resistance ( Per Diode).21 µc K /W 2
MODULE CHRCTERISTICS (T C =25 C unless otherwise specified) Symbol Parameter/Test Conditio alues T Jmax Max. Junction Temperature 175 T Jop MMG15WB17H6EN Operating Temperature -4~15 T stg Storage Temperature -4~125 isol Isolation Breakdown oltage C, 5Hz(R.M.S), t=1minute 4 Torque to heatsink Recommended(M5) 2.5~5 to terminal Recommended(M6) 3~5 Weight 35 Nm Nm g 3 25 2 25 125 3 25 2 ge=2 ge=15 ge=12 ge=1 15 15 ge=8 1 5 GE =15 1 5 1 2 3 4 1 2 3 4 5 CE () CE () Figure 1. Typical Output Characteristics IGBT-inverter Figure 2. Typical Output Characteristics IGBT-inverter 3
MMG15WB17H6EN 3 3 25 2 15 1 CE =2 EonEoff() 25 2 15 1 CE =9 I C =15 GE =±15 Eon Eoff 5 25 125 5 6 7 8 9 1 11 12 15 3 45 6 75 9 GE () Figure 3. Typical Trafer characteristics IGBT-inverter Rg(Ω) Figure 4. Switching Energy vs Gate Resistor IGBT-inverter () EonEoff(m 15 12 9 6 CE =9 R g =9.1Ω GE =±15 Eon Eoff 35 3 25 2 15 R g =9.1Ω GE =±15 3 1 5 5 1 15 2 25 3 3 6 9 12 15 18 I C () Figure 5. Switching Energy vs Collector Current IGBT-inverter 25 CE () Figure 6. Reverse Biased Safe Operating rea IGBTinverter 175 2 15 1 DC IF() 15 125 1 75 DC 5 5 25 25 5 75 1 125 15 175 25 5 75 1 125 15 175 T C ( ) T C ( ) Figure 7. Collector Current vs Case temperature IGBT -inverter 4 Figure 8. Forward current vs Case temperature Diode -inverter
MMG15WB17H6EN 3 25 25 125 5 4 CE =9 I F =15 IF() 2 15 1 EREC() 3 2 5 1.5 1 1.5 2 2.5 3 15 3 45 6 75 9 F () Rg(Ω) Figure 9. Diode Forward Characteristics Diode -inverter Figure 1. Switching Energy vs Gate Resistor Diode - inverter 5 1 4 CE =9 R g =9.1Ω ) EREC(m 3 2 1 /W) ZthJc(K/.1.1 IGBT DIODE 5 1 15 2 25 3.1.1.1.1 1 1 I F () Figure 11. Switching Energy vs Forward Current Diode-inverter Rectangular Pulse Duration(S) Figure 12. Traient Thermal Impedance of Diode and IGBT-inverter 5
MMG15WB17H6EN Figure 13. Circuit Diagram 6 Dimeio in (mm) Figure 14. Package Outline