Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS-compliant, halogen-free Description S1 G1 S2 G2 D1/D2 TO-252-4L N-CH BV 4V R I D DSS DS(ON) P-CH BV DSS -4V R DS(ON) 42mΩ I -12A D 28mΩ 15A Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The is in a four-lead TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for applications such as DC and servo motor drives. G1 D1 S1 G2 D2 S2 Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel V DS Drain-Source Voltage 4-4 V V GS Gate-Source Voltage ±16 ±16 V I D at T A =25 C Continuous Drain Current 3 15. -12. A I D at T A =7 C Continuous Drain Current 3 12. -. A I DM Pulsed Drain Current 1 5-5 A P D at T A =25 C Total Power Dissipation.4 W Linear Derating Factor.83 W/ C T STG Storage Temperature Range -55 to 15 C T J Operating Junction Temperature Range -55 to 15 C Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 12 C/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 4 C/W Ordering Information TR RoHS-compliant TO-252-4L, shipped on tape and reel (3 pcs/reel) No longer recommended for new designs - use AP4543GEH-HF-3TR 2 Advanced Power USA 289235-3 1/8
N-channel Electrical Specifications at T j =25 C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =25uA 4 - - V BV DSS / Tj Breakdown Voltage Temperature Coefficient Reference to 25 C, I D =1mA -.3 - V/ C R DS(ON) Static Drain-Source On-Resistance 2 V GS =V, I D =6A - - 28 mω V GS =4.5V, I D =4A - - 32 mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =25uA 1-3 V g fs Forward Transconductance V DS =V, I D =6A - 6 - S I DSS Drain-Source Leakage Current V DS =4V, V GS =V - - 1 ua Drain-Source Leakage Current (T j =7 o C) V DS =32V, V GS =V - - 25 ua I GSS Gate-Source Leakage V GS =±16V - - ±3 ua Q g Total Gate Charge 2 I D =6A - 9 14 nc Q gs Gate-Source Charge V DS =2V - 1.5 - nc Q gd Gate-Drain ("Miller") Charge V GS =4.5V - 4 - nc t d(on) Turn-on Delay Time 2 V DS =2V - 7 - ns t r Rise Time I D =6A - 2 - ns t d(off) Turn-off Delay Time R G =3Ω, V GS =V - 2 - ns t f Fall Time R D =3.3Ω - 4 - ns C iss Input Capacitance V GS =V - 58 93 pf C oss Output Capacitance V DS =25V - - pf C rss Reverse Transfer Capacitance f=1.mhz - 7 - pf R g Gate Resistance f=1.mhz - 2 3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units V SD Forward On Voltage 2 I S =15A, V GS =V - - 1.8 V t rr Reverse Recovery Time 2 I S =6A, V GS =V - 2 - ns Q rr Reverse Recovery Charge di/dt=a/µs - 15 - nc Notes: 1. Pulse width limited by maximum junction temperature. 2.Pulse width <3us, duty cycle < 2%. 3.Values are the same for both N-CH and P-CH MOSFETs, when mounted on 2oz FR4 board, t <s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 Advanced Power USA 2/8
P-channel Electrical Specifications at T j =25 C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =-25uA -4 - - V BV DSS / Tj Breakdown Voltage Temperature Coefficient Reference to 25 C, I D =-1mA - -.3 - V/ C R DS(ON) Static Drain-Source On-Resistance 2 V GS =-V, I D =-5A - - 42 mω V GS =-4.5V, I D =-3A - - 6 mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =-25uA -.8 - -2.5 V g fs Forward Transconductance V DS =-V, I D =-5A - 5 - S I DSS Drain-Source Leakage Current V DS =-4V, V GS =V - - -1 ua Drain-Source Leakage Current (T j =7 o C) V DS =-32V, V GS =V - - -25 ua I GSS Gate-Source Leakage V GS =±16V - - ±3 ua Q g Total Gate Charge 2 I D =-5A - 9 24 nc Q gs Gate-Source Charge V DS =-2V - 2 - nc Q gd Gate-Drain ("Miller") Charge V GS =-4.5V - 5 - nc t d(on) Turn-on Delay Time 2 V DS =-2V - 8.5 - ns t r Rise Time I D =-5A - 15 - ns t d(off) Turn-off Delay Time R G =3Ω, V GS =-V - 27 - ns t f Fall Time R D =4Ω - 25 - ns C iss Input Capacitance V GS =V - 77 123 pf C oss Output Capacitance V DS =-2V - 165 - pf C rss Reverse Transfer Capacitance f=1.mhz - 115 - pf R g Gate Resistance f=1.mhz - 6 9 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units V SD Forward On Voltage 2 I S =-12A, V GS =V - - -1.8 V t rr Reverse Recovery Time 2 I S =-5A, V GS =V - 2 - ns Q rr Reverse Recovery Charge di/dt=-a/µs - 16 - nc Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <3us, duty cycle < 2%. 3.Values are the same for both N-CH and P-CH MOSFETs, when mounted on 2oz FR4 board, t <s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 Advanced Power USA 3/8
Typical N-channel Electrical Characteristics I D, Drain Current (A) 5 4 3 2 T A =25 o C V 7.V 5.V 4.5V V G =3.V I D, Drain Current (A) 5 4 3 2 T A = 15 o C V 7.V 5.V 4.5V V G =3.V 1 2 3 4 5 6 V DS, Drain-to-Source Voltage (V) 1 2 3 4 5 6 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 12 I D =4A T A =25 o C 1.6 I D =6A V G =V R DS(ON) (mω) 8 6 Normalized R DS(ON) 1.2 4 2.8 2 4 6 8 25 5 75 125 15 V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 14 1.6 12 I S (A) 8 6 4 T j =15 o C T j =25 o C Normalized V GS(th) (V) 1.2.8 2.2.4.6.8 1 1.2 1.4 1.6 V SD, Source-to-Drain Voltage (V).4-5 5 15 T j, Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature 2 Advanced Power USA 4/8
Typical N-channel Electrical Characteristics (cont.) 12 f=1.mhz V GS, Gate to Source Voltage (V) 8 4 I D =6A V DS =2V C (pf) C iss C oss C rss 5 15 2 Q G, Total Gate Charge (nc) 1 5 9 13 17 21 25 29 V DS, Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 I D (A) 1.1 T A =25 o C Single Pulse us 1ms ms ms 1s DC.1 1 Normalized Thermal Response (R thjc ) Duty factor=.5.2.1.1.5 P DM.2 t T.1 Duty factor = t/t Single Pulse Peak T j = P DM x R thjc + T C.1.1.1.1.1.1 1 V DS, Drain-to-Source Voltage (V) t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig. Effective Transient Thermal Impedance 5 4 V DS =5V V G I D, Drain Current (A) 3 2 T j =25 o C T j =15 o C 4.5V Q GS Q G Q GD 2 4 6 8 V GS, Gate-to-Source Voltage (V) Charge Q Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 2 Advanced Power USA 5/8
Typical P-channel Electrical Characteristics -I D, Drain Current (A) 5 4 3 2 T A =25 o C -V -7.V -5.V -4.5V V G = - 3.V -I D, Drain Current (A) 5 4 3 2 T A = 15 o C -V -7.V -5.V -4.5V V G = - 3.V 1 2 3 4 5 6 -V DS, Drain-to-Source Voltage (V) 2 4 6 8 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2 17 I D = -3 A T A =25 o C 1.6 I D = -5A V G = -V 1.4 R DS(ON) (mω) 14 1 8 Normalized R DS(ON) 1.2 1. 5 2.8 2 4 6 8 25 5 75 125 15 -V GS,Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 1.6 12 -I S (A) 8 6 4 T j =15 o C T j =25 o C Normalized -V GS(th) (V) 1.2.8 2.1.3.5.7.9 1.1 1.3 1.5 -V SD, Source-to-Drain Voltage (V).4-5 5 15 T j, Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature 2 Advanced Power USA 6/8
Typical P-channel Electrical Characteristics (cont.) 12 f=1.mhz -V GS, Gate to Source Voltage (V) 8 4 I D =-5A V DS =-2V C (pf) C iss C oss C rss 4 8 12 16 2 Q G, Total Gate Charge (nc) 1 5 9 13 17 21 25 29 -V DS, Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Duty factor=.5 -I D (A) 1.1 T c =25 o C Single Pulse.1 1 -V DS, Drain-to-Source Voltage (V) us 1ms ms ms 1s DC Normalized Thermal Response (R thjc ).2.1.1.5 P DM.2 t T.1 Duty factor = t/t Peak T j = P DM x R thjc + T C Single Pulse.1.1.1.1.1.1 1 t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig. Effective Transient Thermal Impedance 5 V DS =-5V V G 4 -I D, Drain Current (A) 3 2 T j =25 o C T j =15 o C -4.5V Q GS Q G Q GD Charge Q 2 4 6 8 -V GS, Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 2 Advanced Power USA 7/8
Package Dimensions: TO-252-4L A B Millimeters SYMBOLS MIN NOM MAX A 6.4 6.6 6.8 B 5.2 5.35 5.5 C 9.4 9.8.2 D 2.4 2.7 3. P S.5 1.27 REF..65.8 E3 C E3 3.5 4. 4.5 M R.8 1. 1.2 G.4.5.6 H 2.2 2.3 2.4 J.45.5.55 R K..75.15 D L.9 1.2 1.5 M 5.4 5.6 5.8 S P G H K 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. J L Marking Information: 4525GEH YWWSSS LOGO Product: AP4525 Package: GEH = RoHS-compliant halogen-free TO-252-4L Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence 2 Advanced Power USA 8/8