N-channel Enhanced mode TO-220F/TO-220 MOSFET Features High ruggedness Low R DS(ON) (Typ 1.2Ω)@V GS =10V Low Gate Charge (Typ32 nc) Improved dv/dt Capability 100% Avalanche Tested Application: Charge,LED,PC Power TO-220F TO-220 1 1 2 2 3 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BS : 650V I D : 7A R DS(ON) :1.2 Ω 2 1 3 Order Codes Item Sales Type Marking Package Packaging 1 SW P 7N65 SW7N65 TO-220 TUBE 2 SW F 7N65 SW7N65 TO-220F TUBE Absolute maximum ratings Symbol Parameter TO-220 Value TO-220F S Drain to source voltage 650 V I Continuous drain current (@T C =25 o C) 7.0* A D Continuous drain current (@T C =100 o C) 4.5* A I DM Drain current pulsed (note 1) 28 A V GS Gate to source voltage ±30 V E AS Single pulsed avalanche energy (note 2) 276 mj E AR Repetitive avalanche energy (note 1) 9.6 mj dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P Total power dissipation (@T C =25 o C) 147 45 W D Derating factor above 25 o C 1.18 0.36 W/ o C T STG, T J Operating junction temperature & storage temperature -55 ~ + 150 o C Unit T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o C *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value Unit TO-220 TO-220F R thjc Thermal resistance, Junction to case 0.85 2.78 o C/W R thja Thermal resistance, Junction to ambient 60 o C/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 1/6
Electrical characteristic ( T C = 25 o C unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BS Drain to source breakdown voltage V GS =0V, I D =250uA 650 V ΔBS Breakdown voltage temperature / ΔT J coefficient I D =250uA, referenced to 25 o C 0.63 V/ o C I DSS Drain to source leakage current =650V, V GS =0V 1 ua =520V, T C =125 o C 20 ua I Gate to source leakage current, forward V GS =30V, =0V 100 na GSS Gate to source leakage current, reverse V GS =-30V, =0V -100 na On characteristics V GS(TH) Gate threshold voltage =V GS, I D =250uA 2.0 4.0 V R DS(ON) Drain to source on state resistance V GS =10V, I D = 3.5A 1.2 1.3 Ω G fs Forward transconductance = 40 V, I D = 3.5A 5.5 S Dynamic characteristics C iss Input capacitance 1200 C oss Output capacitance V GS =0V, =25V, f=1mhz 110 pf C rss Reverse transfer capacitance 30 t d(on) Turn on delay time 16 t r t d(off) Rising time Turn off delay time =325V, I D =7A, V GS =10V, R G =25Ω (note 4,5) 30 106 t f Fall time 40 Q g Total gate charge 32 Q gs Gate-source charge =520V, V GS =10V, I D =7A (note 4,5) 6 Q gd Gate-drain charge 13 ns nc Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction 7 A I SM Pulsed source current diode in the MOSFET 28 A V SD Diode forward voltage drop. I S =7A, V GS =0V 1.5 V t rr Reverse recovery time I S =7A, V GS =0V, 390 ns Q rr Reverse recovery charge di F /dt=100a/us 3.96 uc. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 11.3mH, I AS = 7A, V DD = 50V, R G =25Ω, Starting T J = 25 o C 3. I SD 7A, di/dt = 100A/us, V DD BS, Staring T J =25 o C 4. Pulse Test : Pulse Width 300us, duty cycle 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 2/6
Fig. 1. On-state characteristics Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 3. Gate charge characteristics Fig. 4. On state current vs. diode forward voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature 1.2 3 Fig. 6. On resistance variation vs. junction temperature BVDSS, (Normalized Drain-Source Breakdown Voltage 1.1 1 0.9 0.8-70 -45-20 5 30 55 80 105 130 155 180 RDSON, (Normalized Drain-Source ON resistance 2.5 2 1.5 1 0.5 0-70 -45-20 5 30 55 80 105 130 155 180 TJ Junction Temperture ( ) TJ Junction Temperture ( ) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 3/6
Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve Fig. 9. Gate charge test circuit & waveform Same type as DUT V GS 10V Q G Q GS Q GD V GS DUT 2mA Charge(nC) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 4/6
Fig. 10. Switching time test circuit & waveform R L 90% V DD V IN 10% 10% 10V IN R GS DUT t d(on) t r t d(off) t f t ON t OFF Fig. 11. Unclamped Inductive switching test circuit & waveform Fig. 12. Peak diode recovery dv/dt test circuit & waveform DUT + V GS (DRIVER) 10V I S - L I S (DUT) di/dt I RM R G V DD Diode reverse current 10V GS Same type as DUT (DUT) Diode recovery dv/dt V F V DD *. dv/dt controlled by RG *. Is controlled by pulse period Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 5/6
DISCLAIMER * All the data & curve in this document was tested in XI AN SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 6/6