6V 6A Module MG66WB-BN4MM RoHS Features High short circuit capability, self limiting short circuit current (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses Applications High frequency switching application Medical applications Motion/servo control supplies UPS systems Module Characteristics ( max Max. Junction Temperature 175 C op Operating Temperature -4 15 C T stg Storage Temperature -4 125 C V isol Insulation Test Voltage AC, t=1min 3 V CTI Comparative Tracking Index 25 Torque Module-to-Sink Recommended (M5) 2.5 5 N m Torque Module Electrodes Recommended (M6) 3 5 N m Weight 35 g Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit S Collector - Emitter Voltage =25 C 6 V V GES Gate - Emitter Voltage ±2 V I C T DC Collector Current C =25 C 7 A =5 C 6 A I CM Repetitive Peak Collector Current t p =1ms 12 A P tot Power Dissipation Per 15 W V RRM Repetitive Reverse Voltage =25 C 6 V I F(AV) =25 C 7 A Average Forward Current =5 C 6 A I FRM Repetitive Peak Forward Current t p =1ms 12 A I 2 t =125 C, t=1ms, V R =V 17 A 2 s MG66WB-BN4MM 196 216 Littelfuse, Inc Revised:1/5/16
6V 6A Module Electrical and Thermal Specifications ( V GE(th) Gate - Emitter Threshold Voltage =V GE, I C =9.6mA 4.9 5.8 6.5 V (sat) Collector - Emitter I C =6A, V GE =15V, =25 C 1.45 V Saturation Voltage I C =6A, V GE =15V, =125 C 1.6 V I ICES Collector Leakage Current =6V, V GE =V, =25 C 1 ma =6V, V GE =V, =125 C 5 ma I GES Gate Leakage Current =V, V GE =±15V, =125 C -4 4 na R Gint Integrated Gate Resistor.68 Ω Q ge Gate Charge =3V, I C =6A, V GE =±15V 6.5 μc C ies Input Capacitance 39 nf C res Reverse Transfer Capacitance =25V, V GE =V, f =1MHz 1.15 nf t d(on) t r t d(off) t f Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time Turn - on Energy Turn - off Energy V CC =3V I C =6A R G =2.4Ω V GE =±15V Inductive Load =25 C 1 ns =125 C 11 ns =25 C 9 ns =125 C 95 ns =25 C 67 ns =125 C 71 ns =25 C 7 ns =125 C 75 ns =25 C 8.9 mj =125 C 9.9 mj =25 C 21.5 mj =125 C 25 mj I SC Short Circuit Current t psc 6μS, V GE =15V; =125 C, V CC =36V 3 A R thjc Junction-to-Case Thermal Resistance (Per ).1 K/W V F Forward Voltage I F =6A, V GE =V, =25 C 1.55 V I F =6A, V GE =V, =125 C 1.5 V t RR Reverse Recovery Time I F =6A, V R =3V 4 ns I RRM Max. Reverse Recovery Current di F /dt=-6a/µs 3 A E rec Reverse Recovery Energy =125 C 9.3 mj R thjcd Junction-to-Case Thermal Resistance (Per ).16 K/W NTC Characteristics ( R 25 Resistance T c =25 C 5 KΩ B 25/5 3375 K MG66WB-BN4MM 97 2 216 Littelfuse, Inc Revised:1/5/16
6V 6A Module Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 12 96 72 V GE =15V =25 C 12 96 72 =125 C V GE =19V V GE =17V V GE =15V V GE =13V V GE =11V V GE = 9V 48 48 =125 C 24 24.4.8 1.2 1.6 2. 2.4.5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. Figure 3: Typical Transfer Characteristics Figure 4: Switching Energy vs. Gate Resistor 12 96 =2V =25 C 2 16 V CC=3V I C=6A =125 C 72 48 =125 C Eon Eoff (mj) 12 8 24 4 5 6 7 8 9 V GE V 1 11 4 8 12 16 2 24 R G Ω Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area Eon Eoff (mj) 7 6 5 4 3 2 1 =3V R G=2.4Ω =125 C 14 12 1 8 6 4 2 R G=2.4Ω =125 C 2 4 6 8 I C A 1 12 1 2 3 4 5 6 7 MG66WB-BN4MM 3 98 216 Littelfuse, Inc Revised:1/5/16
6V 6A Module Figure 7: Forward Characteristics for Inverter Figure 8: Switching Energy vs. Gate Resistort for Inverter 12 96 14 12 1 I F=6A =3V =125 C IF (A) 72 48 =125 C Erec (mj) 8 6 4 24 =25 C 2.4.8 1.2 V F V 1.6 2. 4 8 12 16 2 24 R G Ω Figure 9: Transient Thermal Impedance of and Inverter Figure 1: NTC Characteristics 1 1 ZthJC (K/W).1 R ( ) 1 R.1 1.1.1.1.1 1 1 Rectangular Pulse Duration (seconds) 1 2 4 6 8 1 12 14 16 C Circuit Diagram MG66WB-BN4MM 99 4 216 Littelfuse, Inc Revised:1/5/16
6V 6A Module Dimensions-Package WB The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q MG66WB-BN4MM MG66WB-BN4MM 35g Bulk Pack 6 Part Numbering System Part Marking System MG66 WB - B N4 MM PRODUCT TYPE M: Power Module MODULE TYPE G: VOLTAGE RATING 6: 6V CURRENT RATING 6: 6A ASSEMBLY SITE WAFER TYPE CIRCUIT TYPE 2x(+FWD) PACKAGE TYPE MG66WB-BN4MM LOT NUMBER Space reserved for QR code MG66WB-BN4MM 1 5 216 Littelfuse, Inc Revised:1/5/16