500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 13A,500V,Max.R DS(on) =0.48 Ω @ V GS =10V Low gate charge(typical 45nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings T J =25 unless otherwise specified Symbol Parameter TSP13N50M TSF13N50M Units S Drain-Source Voltage 500 V V GS Gate-Source Voltage ±30 V I D Drain Current T C = 25 13 13* A T C = 100 8 8* A I DM Pulsed Drain Current (Note 1) 52 52* A E AS Single Pulsed Avalanche Energy (Note 2) 860 mj E AR Repetitive Avalanche Energy (Note 1) 19.5 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 ) -Derate above 25 195 48 W 1.56 0.39 W/ T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 * Drain current limited by maximum junction temperature. Thermal Resistance Characteristics Symbol Parameter TSP13N50M TSF13N50M Units R θjc Thermal Resistance,Junction-to-Case 0.64 2.58 /W R θcs Thermal Resistance,Case-to-Sink Typ. 0.5 -- /W R θja Thermal Resistance,Junction-to-Ambient 62.5 62.5 /W
Electrical Characteristics T J =25 unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics V GS Gate Threshold Voltage = V GS, I D = 250 ua μa 3.0 -- 5.0 V R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 ua μa 500 -- -- V BVDSS / TJ I DSS Static Drain-Source On-Resistance Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 10 V, I D = 6.5A -- 0.40 0.48 Ω ID = 250 ua, Referenced to 25 -- 0.6 -- V/ = 500 V, V GS = 0 V -- -- 1 ua = 400 V, T J = 125 -- -- 10 ua I GSSF Gate-Body Leakage Current,Forward V GS = 30 V, = 0 V -- -- 100 na na I GSSR Gate-Body Leakage Current,Reverse V GS =- 30 V, = 0 V -- -- -100 na na Dynamic Characteristics C iss Input Capacitance -- 1600 -- pfpf C oss Output Capacitance = 25 V, V GS = 0 V, f = 1.0 MHz -- 200 -- pfpf C rss Reverse Transfer Capacitance -- 20 -- pf Switching Characteristics t d(on) Turn-On Time = 250 V, I D = 13A, -- 25 -- ns t r Turn-On Rise Time R G = 25 Ω -- 100 -- nsns t d(off) Turn-Off Delay Time (Note 4,5) -- 130 -- nsns t f Turn-Off Fall Time -- 100 -- ns ns Q g Total Gate Charge = 400 V, I D = 13A, -- 45 -- nc Q gs Gate-Source Charge V GS = 10 V -- 8 -- nc Q (Note 4,5) gd Gate-Drain Charge -- 19 -- nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 13 I SM Pulsed Source-Drain Diode Forward Current -- -- 52 V SD Source-Drain Diode Forward Voltage I S = 13A, V GS = 0 V -- -- 1.5 V t rr Reverse Recovery Time I S =13A, V GS = 0 V Q rr Reverse Recovery Charge di F /dt = 100 A/μs (Note 4) -- 4.5 -- uc NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=6mH, I AS =13A, =50V, R G =25 Ω,Starting TJ=25 3. I SD 13A, di/dt 200A/us, BS, Starting TJ = 25 4. Pulse Test: Pulse width 300us, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics A -- 410 -- ns ns
Typical Characteristics
Typical Characteristics
Typical Characteristics
12V 200nF 3mA 50KΩ V GS 300nF Fig 12. Gate Charge Test Circuit & Waveform Same Type as DUT DUT V GS 10V Q gs Q g Q gd Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) 10V DUT V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- L L I 2 2 AS I D BS I AS R G I D (t) 10V DUT (t) t p Time
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I S Driver _ L R G Same Type as DUT V GS dv/dt controlled by RG I S controlled by pulse period V GS ( Driver ) D = Gate Pulse Width -------------------------- Gate Pulse Period 10V I S ( DUT ) I FM, Body Diode Forward Current di/dt I RM ( DUT ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension TO-220
Package Dimension TO-220F