SMC7GS Single P-Channel MOSFET DESCRIPTION SMC7G is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package. PART NUMBER INFORMATION SMC 7G S - TR G a b c d e a : Company name. b : Product Serial number. c : Package code S: SOT-L d : Handling code TR: Tape&Reel e : Green produce code G: RoHS Compliant FEATURES VDS = -V, ID = -.A RDS(ON) =8mΩ(Typ.)@VGS = -V RDS(ON) =68mΩ(Typ.)@VGS = -.5V Fast switch.5v Low gate drive applications APPLICATIONS Portable Equipment Power Management D D S G G SOT-L S ABSOLUTE MAXIMUM RATINGS (TA = 5 C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage - V VGSS Gate-Source Voltage ± V -. A ID Continuous Drain Current TA=7 C -. A IDM Pulsed Drain Current A -6.8 A.6 W PD Power Dissipation B TA=7 C W TJ Operation Junction Temperature -55/5 C TSTG Storage Temperature Range -55/5 C THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient C t s 8 Thermal Resistance Junction to Ambient C Steady-State C/W SMC7GS Rev.A
ELECTRICAL CHARACTERISTICS(TA = 5 C Unless otherwise noted ) SMC7GS Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS =V,ID =-5μA - V VGS(th) Gate Threshold Voltage VDS =VGS,ID =-5μA - -.5 -.5 V IGSS Gate Leakage Current VDS =V,VGS=±V ± na IDSS Zero Gate Voltage Drain Current VDS =-V,VGS =V TJ =5 C - VDS =-V,VGS =V TJ =75 C - μa Drain-source On-Resistance D VGS =-V,ID=-.A 8 55 VGS =-.5V,ID=-.A 68 78 mω Gfs Forward Transconductance VDS =-V,ID=-A 6. S RDS(ON) Diode Characteristics VSD Diode Forward Voltage B IS=-A,VGS=V -.7 - V IS Continuous Source Current -. A Dynamic and Switching Parameters Qg(V) Total Gate Charge.8 6.5 Qg(.5V) Total Gate Charge VDS =-5V,VGS =-V 5.9 8. Qgs Gate-Source Charge ID =-A.7. Qgd Gate-Drain Charge.. Ciss Input Capacitance 5 77 VDS =-5V,VGS =V Coss Output Capacitance 8 67 f =MHz Crss Reverse Transfer Capacitance td(on) 7.5 Turn-On Time E tr VDD=-5V, VGEN=-V, ns td(off) RG=.Ω, ID=-A 6 Turn-Off Time E tf 6 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. The value of RθJA is measured with the device in a still air environment with maximum junction temperature TJ(MAX)= 5 C (initial temperature ). B. The TJ(MAX)=5 C, using junction-to-ambient thermal resistance. C. Surface mounted on FR- board using sq in pad, oz Cu, in a still air environment with. D. The data tested by pulsed, pulse width us, duty cycle % E. Pulsed width limited by maximum junction temperature. nc pf The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. SMC7GS Rev.A
Normalized Threshold Voltage Ptot-Power(W) -VGS(V) Capacitance(pF) RDS(ON)(mΩ) SMC7GS TYPICAL CHARACTERISTICS 8 5 -V VGS=-5V VGS=-6V VGS=-V 9 VGS=-.5V 8 6 VGS=-.5V 6 VGS=-V VGS=-V VGS=-.5V 5 6 9 5 8 -VDS-Drain Source Voltage(V) Output Characteristics Drain-Source On Resistance 8 8 Ciss 6 6 6 8 Qg-Gate Charge(nC) Gate Charge Crss Coss 5 5 5 -VDS-Drain Source Voltage(V) Capacitance.8..5...9.8.6.6.. -5-5 5 5 75 5 5 Gate Threshold Voltage 5 5 75 5 5 Power Dissipation SMC7GS Rev.A
-ID (A) Normalized Transient Thermal Resistance Normalized On Resistance SMC7GS TYPICAL CHARACTERISTICS.8 5.6.. VGS=-V.8.6 5 5 75 5 5 RDS(ON) vs Junction Temperature 5 5 75 5 5 TJ-Case Temperature( C) Drain Current vs TJ. Single Pulse.. Maximum Safe Operation Area VDS Voltage (V) us us ms ms ms DC.. Duty=.5...5....... Square Wave Pulse Duration(Sec) Thermal Transient Impedance t t Duty Cycle, D=t/t -VGS Ton Toff V Qg VGS Td(on) Tr Td(off) Tf Qgs Qgd 9% % VDS Charge Gate Chrge Waveform Switching Time Waveform SMC7GS Rev.A
SMC7GS SOT-L PACKAGE DIMENSIONS Recommended Minimum Pad(mm).8mm.8mm.mm.9mm Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A...9.9 A.... A...9.7 b..5.. c.7.7..8 D.8...8 E.5.7.59.67 E.6...8 e.95 TYP..7 TYP. e.9 TYP..75 TYP. L.5.55.. θ 8 8 SMC7GS Rev.A 5