MC73PA ingle N-Channel MOFET DECRIPTION MC73 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior,fast switching performance, and withstand high energy pulse in the avalanche and commutation mode.these devices are well suited for high efficiency fast switching applications. PART NUMBER INFORMATION MC 73 PA - TR G a b c d e a : Company name. b : Product erial number. c : Package code PA:DFN5X6A-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoH Compliant FEATURE VD = 3V, ID = 6A RD(ON) =.6mΩ(Typ.)@VG = V RD(ON) =5.6mΩ(Typ.)@VG =.5V Low Gate Charge % UI and Rg tested High power and current handling capability APPLICATION Wireless Charging DC/DC Converters Pin D D D D G DFN5X6A-8 G D ABOLUTE MAXIMUM RATING (TA = 5 C Unless otherwise noted ) ymbol Parameter Rating Units VD Drain-ource Voltage 3 V VG Gate-ource Voltage ± V TC=5 C 6 A ID Continuous Drain Current B TC=C 39 A IDM Pulsed Drain Current B A ID PD Continuous Drain Current A Power Dissipation A TA=5 C A TA=7 C 7 A TA=5 C. W TA=7 C.7 W IA Avalanche Current A F 3 A EA ingle Pulse Avalanche energy L=.mH A F 5 mj PD Power Dissipation B TC=5 C 35 W TC= C W TJ Operation Junction Temperature -55/5 C TTG torage Temperature Range -55/5 C THERMAL REITANCE ymbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient AC t s 3 Thermal Resistance Junction to Ambient AC 6 C/W teady-tate RθJC Thermal Resistance Junction to Case A 3.5 MC73PA Rev.A
ELECTRICAL CHARACTERITIC(TA = 5 C Unless otherwise noted ) MC73PA ymbol Parameter Condition Min Typ Max Unit tatic Parameters Drain-ource Breakdown BVD VG =V,ID =5μA 3 V Voltage VG(th) Gate Threshold Voltage VD =VG,ID =5μA..6.5 V IG Gate Leakage Current VD =V,VG=±V ± na ID Zero Gate Voltage Drain Current VD =3V,VG =V, TJ =5 C μa VD =V,VG =V, TJ =75 C Drain-source On-Resistance D VG =V,ID=A.6 6 mω VG =.5V, ID=7A 5.6 7 Gfs Forward Transconductance VD =V,ID =A 5.7 RD(ON) Diode Characteristics VD Diode Forward Voltage D I=A,VG=V.7. V I Continuous ource Current 7.5 A trr Reverse Recovery Time 6 ns I=A, dl/dt=a/μs Qrr Reverse Recovery Charge nc Dynamic and witching Parameters Qg Total Gate Charge (V).8 7.3 Qg Total Gate Charge (.5V) 6. 8.6 VD =5V,VG =V, ID =A Qgs Gate-ource Charge.7 Qgd Gate-Drain Charge.5 3. Ciss Input Capacitance 8 76 Coss Output Capacitance VD =5V,VG =V, f =MHz 73 Crss Reverse Transfer Capacitance 7 78 Rg Gate Resistance VG=V, VD=V, F=MHZ.8.7 Ω td(on) 8.6 Turn-On Time E tr VDD=5V, VGEN=V, 6.5 ns td(off) RG=3Ω, ID=A.5 Turn-Off Time E tf 8 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. The value of RθJA is measured with the device in a still air environment with maximum junction temperature TJ(MAX)= 5 C (initial temperature TA=5 C). B. The power dissipation PD is based on TJ(MAX)=5 C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used C. urface mounted on FR- board using sq in pad, oz Cu, in a still air environment with TA=5 C. D. The data tested by pulsed, pulse width 3u, duty cycle % E. Pulsed width limited by maximum junction temperature. F. The EA data shows Max, tested and pulse width limited by maximum junction temperature 5 C (initial temperature Tj=5 C). The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. nc pf MC73PA Rev.A
Normalized Threshold Voltage Ptot-Power(W) VG(V) Capacitance(pF) RD(ON)(mΩ) MC73PA TYPICAL CHARACTERITIC 8 VG=6V VG=V 8 TA=5 C 6 VG=V 6 VG=3.5V VG=V VG=3V 3 5 5 5 5 3 VD-Drain ource Voltage(V) Output Characteristics Drain-ource On Resistance 8 VD =V ID =A 6 8 Ciss 6 Coss 6 8 Crss 5 5 5 3 Qg-Gate Charge(nC) Gate Charge VD-Drain ource Voltage(V) Capacitance.. 35 3 5.8 5.6. -5-5 5 5 75 5 5 Gate Threshold Voltage 5 5 5 75 5 5 Power Dissipation MC73PA Rev.A 3
Normalized Transient Thermal Resistance Normalized On Resistance MC73PA TYPICAL CHARACTERITIC.8 75 Tc=5 C.6 6.. VG=V 5 3.8 5.6 5 5 75 5 5 RD(ON) vs Junction Temperature 5 5 75 5 5 TC-Case Temperature( C) Drain Current vs TC TC=5 C us ID (A) us ms ms ms DC.. Duty=.5...5.. t ingle Pulse... Maximum afe Operation Area VD Voltage (V)..... quare Wave Pulse Duration(ec) Thermal Transient Impedance t Duty Cycle, D=t/t VG Ton Toff V Qg VD Td(on) Tr Td(off) Tf Qgs Qgd 9% % Charge VG Gate Chrge Waveform witching Time Waveform MC73PA Rev.A
MC73PA POD-3A_DFN5X6A PACKAGE DIMENION F A B I H D D E D I e C Ɵ G L ymbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A.9..35.3 B.33.5.3. C..3.8. D 5.9 6..3. D 3.38 3.78.33.9 D..3 E 5.7 5.8..8 e.7bc..7bc. F.8 5..89.97 G.36.396..6 H..6.6. I.6...8 L.5.7..8 Ɵ MC73PA Rev.A 5