Features l Advanced Process Technology l Key Parameters Optimized for PP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power issipation in PP Sustain, Energy Recovery and Pass Switch Applications l Low Q G for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175 C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability PP SWITCH G IRFS4227PbF IRFSL4227PbF Key Parameters V S max 2 V V S (Avalanche) typ. 24 V R S(ON) typ. @ 1V 22 m: I RP max @ T C = 1 C 13 A T J max 175 C S S G 2 Pak IRFS4227PbF P - 96131A S G TO-262 IRFSL4227PbF escription G S Gate rain Source This HEXFET Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma isplay Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E PULSE rating. Additional features of this MOSFET are 175 C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PP driving applications Absolute Maximum Ratings Parameter Max. Units V GS Gate-to-Source Voltage ±3 V I @ T C = 25 C Continuous rain Current, V GS @ 1V 62 I @ T C = 1 C Continuous rain Current, V GS @ 1V 44 I M Pulsed rain Current c 26 A I RP @ T C = 1 C Repetitive Peak Current g 13 P @T C = 25 C Power issipation 33 P @T C = 1 C Power issipation 19 W Linear erating Factor 2.2 W/ C T J Operating Junction and -4 to 175 T STG Storage Temperature Range C Soldering Temperature for 1 seconds Mounting Torque, 6-32 or M3 Screw 3 1lbfxin (1.1Nxm) N Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case f.45* R θja Junction-to-Ambient (PCB Mounted) 2 Pak h 4 * R θjc (end of life) for 2 Pak and TO-262 =.65 C/W. This is the maximum measured value after 1 temperature cycles from -55 to 15 C and is accounted for by the physical wearout of the die attach medium. Notes through are on page 8 www.irf.com 1 12/6/8
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS rain-to-source Breakdown Voltage 2 V ΒV SS / T J Breakdown Voltage Temp. Coefficient 17 mv/ C R S(on) Static rain-to-source On-Resistance 22 26 mω V GS(th) Gate Threshold Voltage 3. 5. V V GS(th) / T J Gate Threshold Voltage Coefficient -13 mv/ C I SS rain-to-source Leakage Current 2 µa 2 µa I GSS Gate-to-Source Forward Leakage 1 na Gate-to-Source Reverse Leakage -1 g fs Forward Transconductance 49 S Q g Total Gate Charge 7 98 nc Q gd Gate-to-rain Charge 23 t d(on) Turn-On elay Time 33 t r Rise Time 2 ns t d(off) Turn-Off elay Time 21 t f Fall Time 31 t st Shoot Through Blocking Time 1 ns 57 E PULSE Energy per Pulse µj C iss Input Capacitance 46 V GS = V C oss Output Capacitance 46 pf V S = 25V C rss Reverse Transfer Capacitance 91 ƒ = 1.MHz, C oss eff. Effective Output Capacitance 36 V GS = V, V S = V to 16V L Internal rain Inductance 4.5 Between lead, nh 6mm (.25in.) L S Internal Source Inductance 7.5 from package Avalanche Characteristics Parameter 91 Conditions V GS = V, I = 25µA Reference to 25 C, I = 1mA V GS = 1V, I = 46A e V S = V GS, I = 25µA V S = 2V, V GS = V V S = 2V, V GS = V, T J = 125 C V GS = 2V V GS = -2V V S = 25V, I = 46A V = 1V, I = 46A, V GS = 1Ve V = 16V, V GS = 15V, R G = 4.7Ω L = 22nH, C=.4µF, V GS = 15V V S = 16V, R G = 4.7Ω, T J = 25 C L = 22nH, C=.4µF, V GS = 15V V S = 16V, R G = 4.7Ω, T J = 1 C and center of die contact E AS Single Pulse Avalanche Energyd 14 mj E AR Repetitive Avalanche Energy c 46 mj V S(Avalanche) Repetitive Avalanche Voltagec 24 V I AS Avalanche Currentd 37 A Typ. V = 1V, V GS = 1Ve I = 46A R G = 2.5Ω See Fig. 22 Max. G Units S iode Characteristics Parameter Min. Typ. Max. Units I S @ T C = 25 C Continuous Source Current 62 (Body iode) A I SM Pulsed Source Current (Body iode)c 26 V S iode Forward Voltage 1.3 V t rr Reverse Recovery Time 1 15 ns Q rr Reverse Recovery Charge 43 64 nc Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S = 46A, V GS = V e T J = 25 C, I F = 46A, V = 5V di/dt = 1A/µs e 2 www.irf.com
Energy per pulse (µj) Energy per pulse (µj) I, rain-to-source Current (Α) R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current (A) I, rain-to-source Current (A) IRFS/SL4227PbF 1 VGS TOP 15V 1V 8.V BOTTOM 7.V 7.V 1 1 VGS TOP 15V 1V 8.V BOTTOM 7.V 7.V 1 1 6µs PULSE WITH Tj = 25 C.1 1 1 V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics 1 6µs PULSE WITH Tj = 175 C.1 1 1 V S, rain-to-source Voltage (V) Fig 2. Typical Output Characteristics 1. V S = 25V 6µs PULSE WITH 4. I = 46A V GS = 1V 1. 3. 1. T J = 175 C 2. 1. T J = 25 C 1..1 3. 4. 5. 6. 7. 8. V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics. -6-4 -2 2 4 6 8 1 12 14 16 18 T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature 1 9 8 L = 22nH C =.4µF 1 C 25 C 1 8 L = 22nH C = Variable 1 C 25 C 7 6 6 5 4 4 3 2 2 1 11 12 13 14 15 16 17 13 14 15 16 17 18 19 V S, rain-to -Source Voltage (V) I, Peak rain Current (A) Fig 5. Typical E PULSE vs. rain-to-source Voltage Fig 6. Typical E PULSE vs. rain Current www.irf.com 3
I, rain Current (A) Energy per pulse (µj) I S, Reverse rain Current (A) I, rain-to-source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) IRFS/SL4227PbF 14 L = 22nH 1. 12 1 C=.4µF C=.3µF C=.2µF 1. T J = 175 C 8 6 1. 4 2 25 5 75 1 125 15 Temperature ( C) Fig 7. Typical E PULSE vs.temperature 1. T J = 25 C V GS = V.1.2.4.6.8 1. 1.2 V S, Source-to-rain Voltage (V) Fig 8. Typical Source-rain iode Forward Voltage 8 6 V GS = V, f = 1 MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 2 16 I = 46A V S = 16V V S = 1V V S = 4V Ciss 12 4 8 2 Coss 4 Crss 1 1 1 1 V S, rain-to-source Voltage (V) Fig 9. Typical Capacitance vs.rain-to-source Voltage 2 4 6 8 1 12 Q G Total Gate Charge (nc) Fig 1. Typical Gate Charge vs.gate-to-source Voltage 7 6 5 1 1 OPERATION IN THIS AREA LIMITE BY R S (on) 1µsec 1µsec 1µsec 4 3 1 2 1 25 5 75 1 125 15 175 1.1 Tc = 25 C Tj = 175 C Single Pulse 1 1 1 1 T C, CaseTemperature ( C) V S, rain-to-source Voltage (V) Fig 11. Maximum rain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area 4 www.irf.com
V GS(th) Gate threshold Voltage (V) Repetitive Peak Current (A) R S (on), rain-to -Source On Resistance (Ω) E AS, Single Pulse Avalanche Energy (mj) IRFS/SL4227PbF.16.12 I = 46A 6 5 4 I TOP 8.5A 14A BOTTOM 37A.8 3 T J = 125 C 2.4. T J = 25 C 5 6 7 8 9 1 V GS, Gate-to-Source Voltage (V) 1 25 5 75 1 125 15 175 Starting T J, Junction Temperature ( C) Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature 5. 4.5 4. I = 25µA 2 16 ton= 1µs uty cycle =.25 Half Sine Wave Square Pulse 3.5 12 3. 8 2.5 2. 4 1.5-75 -5-25 25 5 75 1 125 15 175 T J, Temperature ( C ) 25 5 75 1 125 15 175 Case Temperature ( C) Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs. Case temperature 1 =.5.1.2 Thermal Response ( Z thjc ).1.1.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri 1E-6 1E-5.1.1.1.1 t 1, Rectangular Pulse uration (sec) Notes: 1. uty Factor = t1/t2 2. Peak Tj = P dm x Zthjc Tc Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case Ri ( C/W) τi (sec).8698.74.2112.1316.156.9395 www.irf.com 5 τ C τ
-.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =1V V * R G di/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-Applied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 18. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs 15V tp V (BR)SS V S L RIVER R G 2V V GS tp.u.t IAS.1Ω - V A I AS Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Vds Id Vgs 1K UT L VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 2a. Gate Charge Test Circuit Fig 2b. Gate Charge Waveform 6 www.irf.com
Fig 21a. t st and E PULSE Test Circuit Fig 21b. t st Test Waveforms Fig 21c. E PULSE Test Waveforms V S R V S 9% R G V GS.U.T. - V V GS Pulse Width 1 µs uty Factor.1 % 1% V GS t d(on) t r t d(off) t f Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms www.irf.com 7
2 Pak Package Outline (imensions are shown in millimeters (inches)) 2 Pak Part Marking Information 7,6,6$1,5)6:,7 $66(%/('21::,17($66(%/</,1(/ 1RWH3LQVVHPEO\OLQH SRVLWLRQLQGLFWHV/HG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< )6 3$5718%(5 '$7(&2'( <($5 :((. /,1(/ OR,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< )6 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com
TO-262 Package Outline imensions are shown in millimeters (inches) TO-262 Part Marking Information (;$3/( 7,6,6$1,5// $66(%/('21::,17($66(%/</,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( <($5 :((. /,1(& 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9
2 Pak Tape & Reel Information TRR 1.6 (.63) 1.5 (.59) 4.1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEE IRECTION TRL 1.85 (.73) 1.65 (.65) 11.6 (.457) 11.4 (.449) 15.42 (.69) 15.22 (.61) 24.3 (.957) 23.9 (.941) 1.9 (.429) 1.7 (.421) 16.1 (.634) 15.9 (.626) 1.75 (.69) 1.25 (.49) 4.72 (.136) 4.52 (.178) FEE IRECTION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) 4 33. (14.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING IMENSION: MILLIMETER. 3. IMENSION MEASURE @ HUB. 4. INCLUES FLANGE ISTORTION @ OUTER EGE. 26.4 (1.39) 24.4 (.961) 3 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.2mH, R G = 25Ω, I AS = 37A. ƒ Pulse width 4µs; duty cycle 2%. R θ is measured at T J of approximately 9 C. Half sine wave with duty cycle =.25, ton=1µsec. When mounted on 1" square PCB (FR-4 or G-1 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 3.4 (1.197) MAX. 4 ata and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) 252-715 TAC Fax: (31) 252-793 Visit us at www.irf.com for sales contact information. 12/28 1 www.irf.com