SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding inverters ABSOLUTE MAXIMUM RATINGS T C =25 C unless otherwise specified Symbol Parameter Test Conditions Values Unit V CES Collector - Emitter Voltage 12 V V GES Gate - Emitter Voltage ±2 V I C DC Collector Current T C =25 C 3 A T C =8 C 2 A I CM Repetitive Peak Collector Current t p =1ms 4 A P tot Power Dissipation Per IGBT 14 W V RRM Repetitive Reverse Voltage 12 V I F(AV) Average Forward Current T C =25 C 3 A T C =8 C 2 A I FRM Repetitive Peak Forward Current t p =1ms 4 A I 2 t T Vj =45 C, t=1ms, V R =V 15312 A 2 s Reverse-Diode V RRM Repetitive Reverse Voltage 12 V I F(AV) Average Forward Current T C =25 C 45 A T C =8 C 3 A I FRM Repetitive Peak Forward Current t p =1ms 6 A I 2 t T Vj =45 C, t=1ms, V R =V 45 A 2 s MacMic Science & Technology Co., Ltd. Version: 1 Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R.of China Tel.:+86-519-8516378 Fax:+86-519-85162291 Post Code:21322 Website:www.macmicst.com
ELECTRICAL AND THERMAL CHARACTERISTICS SKM2GAH123DKL T C =25 C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit V GE(th) Gate - Emitter Threshold Voltage V CE =V GE, I C =8mA 5.2 6 7 V V CE(sat) I CES Collector - Emitter Saturation Voltage Collector Leakage Current I C =2A, V GE =15V, 1.8 V I C =2A, V GE =15V, 2. V V CE =12V, V GE =V, 1 ma V CE =12V, V GE =V, 1 ma I GES Gate Leakage Current V CE =V,V GE ±15V, -4 4 na Q ge Gate Charge V CE =6V, I C =2A, V GE =±15V 2.1 µc C ies Input Capacitance 14.9 nf V CE =25V, V GE =V, f =1MHz C res Reverse Transfer Capacitance.7 nf t d(on) Turn - on Delay Time V CC =6V,I C =2A, R G =5.1Ω, 13 ns 14 ns t r Rise Time V GE =±15V, Inductive Load 65 ns 65 ns t d(off) Turn - off Delay Time V CC =6V,I C =2A, R G =5.1Ω, 43 ns 5 ns t f Fall Time V GE =±15V, Inductive Load 65 ns 8 ns E on Turn - on Energy V CC =6V,I C =2A, R G =5.1Ω, 17.2 mj 24.8 mj E off Turn - off Energy V GE =±15V, Inductive Load 13.6 mj 21.6 mj I SC Short Circuit Current t psc 1µS, V GE =15V, T Vj =15 C V CC =9V, V CEMCHIP 12V 9 A R thjc Junction-to-Case Thermal Resistance ( Per IGBT).12 K /W V F Forward Voltage I F =2A, V GE =V, 1.95 V I F =2A, V GE =V, 1.95 V I RRM Max. Reverse Recovery Current I F =2A, V R =6V 155 A Q rr Reverse Recovery Charge di F /dt=-24a/μs 17.5 µc E rec Reverse Recovery Energy 8.5 mj R thjcd Junction-to-Case Thermal Resistance ( Per Diode).25 K /W Reverse-Diode V F Forward Voltage I F =3A, V GE =V, 1.53 V I F =3A, V GE =V, 1.52 V I RRM Max. Reverse Recovery Current I F =3A, V R =6V 6 A Q rr Reverse Recovery Charge di F /dt=-1a/μs, 5.5 µc R thjcd Junction-to-Case Thermal Resistance ( Per Diode) 1. K /W - 2 -
MODULE CHARACTERISTICS SKM2GAH123DKL T C =25 C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit T Vj max Max. Junction Temperature 15 C T Vj op Operating Temperature -4 125 C T stg Storage Temperature -4 125 C V isol Insulation Test Voltage AC, t=1min 3 V M d Mounting Torque Recommended(M6) 3 5 N m Weight 3 g 4 V GE =15V 4 32 32 IC (A) 24 16 IC (A) 24 16 8 8 1. 2. 3. 4. 5. Figure1. Typical Output characteristics 1 2 3 4 5 6 Figure2. Typical Output characteristics 4 32 V CE =2V 8 6 V CC =6V I C =2A V GE =±15V IC (A) 24 16 Eon Eoff (mj) 4 E on 8 2 E off 6 7 8 9 1 11 12 13 5 1 15 2 V GE (V) Figure3. Typical Transfer characteristics R G (Ω) Figure4. Switching Energy vs. Gate Resistor - 3 -
SKM2GAH123DKL 1 8 V CC =6V R G =5.1Ω V GE =±15V 1 C ies V GE =V f=1mhz Eon Eoff (mj) 6 4 2 E on E off C (nf) 1 1 C res C oes 5 1 15 2 25 3 35 4 I C (A) Figure5. Switching Energy vs. Collector Current 5 1 15 2 25 3 35 Figure6. Typical Capacitances vs. V CE 15 V CC =6V 4 35 3 VGE (V) 1 3 5 4 V CC =8V I C =2A 4 8 12 16 2 Q g (nc) Figure7. Gate Charge characteristics ICpuls (A) 25 2 15 1 V GE =15V 5 2 4 6 8 1 12 14 Figure8. Reverse Biased Safe Operating Area 25 2 R G =5.1Ω V CE =6V IF (A) 2 1 Erec (mj) 15 1 5.5 1. 1.5 2. 2.5 3. 3.5 4. V F (V) Figure9. Diode Forward Characteristics 1 2 3 I F (A) Figure1. Switching Energy vs. I F 4-4 -
SKM2GAH123DKL 6 1 5 4 IF (A) 3 2 ZthJC (K/W).1 1.5 1. 1.5 2. 2.5 V F (V) Figure11. Diode Forward Characteristics Reverse-Diode.1.1.1.1 1 1 Rectangular Pulse Duration (seconds) Figure12. Transient Thermal Impedance Figure13. Circuit Diagram - 5 -
SKM2GAH123DKL Dimensions (mm) Figure14. Package Outline - 6 -