2MBI14VXB-17E-5 IGBT MODULE (V series) 17V / 14A / 2 in one package Inverter Inverter Thermistor 1 Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 17 V Gate-Emitter voltage VGES ±2 V Ic Continuous Tc=25 C 18 Tc=1 C 14 Collector current Ic pulse 1ms 28 A -Ic 14 -Ic pulse 1ms 28 Collector power dissipation Pc 1 device 882 W Junction temperature Tj 175 Operating junction temperature (under switching conditions) Tjop 15 Case temperature TC 15 C Storage temperature Tstg -4 ~ +15 Isolation voltage between terminal and copper base (*1) between thermistor and others (*2) Viso AC : 1min. 4 VAC Mounting M5 6. Screw torque (*3) Main Terminals - M8 1. N m Sense Terminals M4 2.1 Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : Mounting 3. ~ 6. Nm (M5) Recommendable Value : Main Terminals 8. ~ 1. Nm (M8) Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4) Electrical characteristics (at Tj= 25 C unless otherwise specified) Items Symbols Conditions Characteristics min. typ. max. Units Zero gate voltage collector current ICES VGE = V, VCE = 17V - - 12. ma Gate-Emitter leakage current IGES VCE = V, VGE = ±2V - - 24 na Gate-Emitter threshold voltage VGE (th) VCE = 2V, IC = 14mA 6. 6.5 7. V VCE (sat) Tj=25 C - 2.35 2.8 (terminal) Tj=125 C - 2.85 - (*4) VGE = 15V Tj=15 C - 2.95 - Collector-Emitter saturation voltage V IC = 14A Tj=25 C - 2.15 2.6 VCE (sat) Tj=125 C - 2.65 - (chip) Tj=15 C - 2.75 - Internal gate resistance Rg(int) - - 2.25 - Ω Input capacitance Cies VCE = 1V, VGE = V, f = 1MHz - 113 - nf - 135 - Turn-on time tr - 3 - VCC=9V, Ic=14A, VGE=±15V, tr (i) - 15 - nsec RG=+.47/-.68Ω, Ls=4nH toff - 16 - Turn-off time tf - 15 - VF Tj=25 C - 2. 2.45 (terminal) Tj=125 C - 2.25 - (*4) VGE = V Tj=15 C - 2.2 - Forward on voltage V IF = 14A Tj=25 C - 1.8 2.25 VF Tj=125 C - 2.5 - (chip) Tj=15 C - 2. - Reverse recovery time trr IF = 14A - 25 - nsec Resistance R T=25 C - 5 - T=1 C 465 495 52 Ω B value B T=25/5 C 335 3375 345 K Note *4: Please refer to Page 6, there is definition of on-state voltage at terminal. Thermal resistance characteristics Items Symbols Conditions Characteristics min. typ. max. Units Thermal resistance (1device) Rth(j-c) Inverter IGBT - -.17 Inverter FWD - -.32 C/W Contact thermal resistance (1device) (*5) Rth(c-f) with Thermal Compound -.42 - Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. 7962a JUNE 215
2MBI14VXB-17E-5 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25 C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 15 C / chip 3 Vge=2V 15V 25 12V 2 15 1V 5 8V 1 2 3 4 5 3 25 2 15 5 Vge= 2V 15V 12V 1V 8V 1 2 3 4 5 Collector current vs. Collector-Emitter voltage (typ.) Vge= 15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25 C / chip 3 1 Collector Current: Ic [A] 25 2 15 5 Tj=25 C 125 C 15 C Collector-Emitter Voltage: Vce [V] 8 6 4 2 Ic=28A Ic=14A Ic=7A 1 2 3 4 5 Collector-Emitter Voltage: Vce [V] 5 1 15 2 25 Gate-Emitter Voltage: Vge [V] Gate Capacitance vs. Collector-Emitter Voltage (typ.) Vge= V, ƒ= 1MHz, Tj= 25 C Gate Capacitance: Cies, Coes, Cres [nf] *** 1 1 Cies Coes Cres 1 5 1 15 2 25 3 Gate-Emitter voltage: Vge [V] Dynamic Gate Charge (typ.) Vcc=9V, Ic=14A, Tj= 25 C 2 125 15 Vce 1 5-5 -1-15 75 5 25 Vge -25-5 -75-2 - -15-5 5 15 Gate charge: Qg [nc] 2
2MBI14VXB-17E-5 Switching time vs. Collector current (typ.) Vcc=9V, Vge=±15V, Rg=+.47/-.68Ω, Tj=25 C Switching time vs. Collector current (typ.) Vcc=9V, Vge=±15V, Rg=+.47/-.68Ω, Tj=125 C, 15 C Switching time:, tr, toff, tf [nsec] 1 1 toff tr tf 5 15 2 25 3 Switching time:, tr, toff, tf [nsec] 1 1 Tj=15 o C toff 5 15 2 25 3 tf tr Switching time vs. Gate resistance (typ.) Vcc=9V, Ic=14A, Vge=±15V, Tj=125 C, 15 C Switching loss vs. Collector current (typ.) Vcc=9V, Vge=±15V, Rg=+.47/-.68Ω, Tj=125 C, 15 C Switching time:, tr, toff, tf [nsec] 1 toff Tj=15 o C 1.1 1 1 1 tr tf Switching loss: Eon, Eoff, Err [mj/pulse] 14 12 8 6 4 2 Tj=15 o C Eoff Eon Err 5 15 2 25 3 Gate resistance: Rg [Ω] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=9V, Ic=14A, Vge=±15V, Tj=125 C, 15 C +Vge=15V, -Vge=15V, Rg=+.47/-.68Ω, Tj=15 C Switching loss: Eon, Eoff, Err [mj/pulse] 25 2 15 5 Tj=15 o C Eon Eoff Err.1 1 1 1 Gate resistance: Rg [Ω] 3 3 25 2 15 5 Notice) Please refer to Page 6. There is definision of VCE. 5 15 2
2MBI14VXB-17E-5 3 Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) Vcc=9V, Vge=±15V, Rg=+.47/-.68Ω, Tj=25 C Forward current: If [A] 25 2 15 5 15 C Tj=25 C 125 C Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 1 Irr trr 1 1 2 2 3 3 1 5 15 2 25 3 Forward on voltage: Vf [V] Forward current: If [A] Reverse Recovery Characteristics (typ.) Vcc=9V, Vge=±15V, Rg=+.47/-.68Ω, Tj=125 C, 15 C Transient Thermal Resistance (max.) Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 1 1 Tj=15 o C 5 15 2 25 3 Forward current: If [A] Irr trr Thermal resistanse: Rth(j-c) [ C/W] ***.1.1.1.1.1.1.1 1 Pulse Width : Pw [sec] FWD IGBT T sec.23.31.598.78 Rth IGBT.182.462.653.42 C/W FWD.343.87.1229.757 1 [THERMISTOR] Temperature characteristic (typ.) 3 FWD safe operating area (max.) Tj=15 C Resistance : R [kω] 1 1 Reverse recovery current: Irr [A] 25 2 15 5 Notice) Please refer to Page 6. There is definision of VCE. Pmax=175kW.1-6 -4-2 2 4 6 8 1 12 14 16 5 15 2 Temperature [ C] Collector-Emitter voltage: VCE [V] 4
2MBI14VXB-17E-5 Outline Drawings, mm LABEL Weight:125g(typ.) Equivalent Circuit Schematic [Inverter] [Thermistor] Main C1 (9), (11) Sense C1 (5) TH1 (7) Main C2E1 (8) G1(4) Sense C2E1(3) TH2 (6) G2 (1) Sense E2 (2) Main E2 (1), (12) 5
2MBI14VXB-17E-5 Definition of on-state voltage at terminal and switching characteristics Main C2E1 Main C1 Sense C1 VCE (terminal) G1 of Upper arm Sense C2E1 Fuji defined VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm. Switching characteristics of VCE also is defined between Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm. G2 Please use these terminals whenever VCE (terminal) measure spike voltage and on-state voltage. of Lower arm Main E2 Sense E2 6
2MBI14VXB-17E-5 WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of June 215. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright 1996-215 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7