N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm 2. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. 3 Order Codes Item Sales Type Marking Package Packaging SW P 4N60 TO-220 TUBE 2 SW F 4N60 TO-220F TUBE Absolute maximum ratings Symbol Parameter TO-220 Value TO-220F S Drain to Source Voltage 600 V I D Continuous Drain Current (@T C =25 o C) 4.0 4.0* A Continuous Drain Current (@T C =00 o C) 2.5 2.5* A I DM Drain current pulsed (note ) 6 A V GS Gate to Source Voltage ±30 V E AS Single pulsed Avalanche Energy (note 2) 405 mj E AR Repetitive Avalanche Energy (note ) 43 mj dv/dt Peak diode Recovery dv/dt (note 3) 4 V/ns P D Total power dissipation (@T C =25 o C) 98 33 W Derating Factor above 25 o C.58 0.26 W/ o C T STG, T J Operating Junction Temperature & Storage Temperature -55 ~ + 50 o C T L Maximum Lead Temperature for soldering purpose, /8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Unit 300 o C Thermal characteristics Symbol Parameter Value TO-220 TO-220F Unit R thjc Thermal resistance, Junction to case 0.63 3.8 o R thcs Thermal resistance, Case to Sink 0.5 - o R thja Thermal resistance, Junction to ambient 65 o Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 202. Rev. 3.0 /5
Electrical characteristic ( T C = 25 o C unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BS Drain to source breakdown voltage V GS =0V, I D =250uA 600 - - V ΔBS Breakdown voltage temperature / ΔT J coefficient I D =250uA, referenced to 25 o C - 0.46 - V/ o C I DSS Drain to source leakage current =600V, V GS =0V - - ua =480V, T C =25 o C - - 0 ua I GSS Gate to source leakage current, reverse V GS =-30V, =0V - - -00 na Gate to source leakage current, forward V GS =30V, =0V - - 00 na On characteristics V GS(TH) Gate threshold voltage =V GS, I D =250uA 2.0-4.0 V R DS(ON) Drain to source on state resistance V GS =0V, I D = 2A -.85 2.2 Ω Gfs Forward Transconductance VDS = 40 V, ID = 2 A 2 - - S Dynamic characteristics C iss Input capacitance - 570 740 C oss Output capacitance V GS =0V, =25V, f=mhz - 64 83 C rss Reverse transfer capacitance - 4 8 t d(on) Turn on delay time - 2 30 tr Rising time =300V, I D =4A, R G =25Ω - 30 80 t d(off) Turn off delay time (note 4,5) - 93 50 t f Fall time - 38 50 Q g Total gate charge - 30 50 Q gs Gate-source charge =480V, V GS =0V, I D =4A (note 4,5) - 3.7 - Q gd Gate-drain charge - 7 - pf ns nc Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction - - 4 A I SM Pulsed source current diode in the MOSFET - - 6 A V SD Diode forward voltage drop. I S =4A, V GS =0V - -.5 V T rr Reverse recovery time I S =4A, V GS =0V, - 334 - ns Q rr Breakdown voltage charge di F /dt=00a/us - 2.5 - uc. Notes. Repeatitive rating : pulse width limited by junction temperature. 2. L = 50.6mH, I AS = 4A, = 50V, R G =25Ω, Starting T J = 25 o C 3. I SD 4A, di/dt = 00A/us, BS, Staring T J =25 o C 4. Pulse Test : Pulse Width 300us, duty cycle 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 202. Rev. 3.0 2/5
Fig.. On-state characteristics Fig. 2. On-resistance variation vs. drain current and gate voltage Notes:. 250μs Pulse Test 2. T=25 3. VGS 4~0V Step=V VGS=0V VGS=20V Fig. 3. Gate charge characteristics 2.0 Fig. 4. On state current vs. diode forward voltage Vgs, Gate Source Voltage(V) 0.0 8.0 6.0 4.0 2.0 VDS=480V 50 25 0.0 0.0 5.0 0.0 5.0 20.0 25.0 30.0 35.0 Qg, Total Gate Charge (nc) Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature.2 3 BVDSS, (Normalized Drain-Source Breakdown Voltage. 0.9 0.8-70 -45-20 5 30 55 80 05 30 55 80 TJ Junction Temperture ( ) RDSON, (Normalized Drain-Source ON resistance 2.5 2.5 0.5 0-70 -45-20 5 30 55 80 05 30 55 80 TJ Junction Temperture ( ) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 202. Rev. 3.0 3/5
Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve Fig. 9. Gate charge test circuit & waveform Same type as V GS 0V Q G Q GS Q GD V GS 2mA Charge nc Fig. 0. Switching time test circuit & waveform R L 90% R GS V IN 0% 0% 0V IN t d(on) t r t d(off) t f t ON t OFF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 202. Rev. 3.0 4/5
Fig.. Unclamped Inductive switching test circuit & waveform Fig. 2. Peak diode recovery dv/dt test circuit & waveform + V GS (DRIVER) 0V I S - L I S () di/dt I RM R G Diode reverse current 0V GS Same type as () Diode recovery dv/dt V F *. dv/dt controlled by RG *. Is controlled by pulse period Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 202. Rev. 3.0 5/5