Diode RapidSwichingEmierConrolledDiode EmierConrolledDiodeRapid1Series Daashee IndusrialPowerConrol
EmierConrolledDiodeRapid1Series RapidSwichingEmierConrolledDiode Feaures: 650VEmierConrolledechnology Temperauresablebehaviourofkeyparameers Lowforwardvolage(VF) Ulrafasrecovery Lowreverserecoverycharge(Qrr) Lowreverserecoverycurren(Irrm) 175 Cjuncionoperaingemperaure Pbfreeleadplaing;RoHScomplian Applicaions: AC/DCconverers BoosdiodeinPFCsages Freewheelingdiodesininverersandmoordrives Generalpurposeinverers Swichmodepowersupplies C A C C A KeyPerformanceandPackageParameers Type Vrrm If Vf,Tvj=25 C Tvjmax Marking Package 650V 30A 1.35V 175 C E30ED1 PGTO22021 2 Rev.2.1,20140918
EmierConrolledDiodeRapid1Series TableofConens Descripion........................................................................ 2 Table of Conens................................................................... 3 Maximum Raings................................................................... 4 Thermal Resisance................................................................. 4 Elecrical Characerisics.............................................................. 4 Elecrical Characerisics Diagrams..................................................... 6 Package Drawing................................................................... 8 Tesing Condiions.................................................................. 9 Revision Hisory................................................................... 10 Disclaimer........................................................................ 10 3 Rev.2.1,20140918
EmierConrolledDiodeRapid1Series MaximumRaings Foropimumlifeimeandreliabiliy,Infineonrecommendsoperaingcondiionshadonoexceed80%ofhemaximumraingssaedinhisdaashee. Parameer Symbol Value Uni Repeiivepeakreversevolage,Tvj 25 C VRRM 650 V Diodeforwardcurren,limiedbyTvjmax TC=25 C TC=100 C IF 60.0 30.0 Diodepulsedcurren,plimiedbyTvjmax IFpuls 90.0 A Diode surge non repeiive forward curren TC=25 C,p=10.0ms,sinehalfwave IFSM 180.0 PowerdissipaionTC=25 C Po 143.0 W Operaing juncion emperaure Tvj 40...+175 C Sorage emperaure Tsg 55...+150 C Soldering emperaure, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 Mouning orque, M3 screw Maximum of mouning processes: 3 A A C M 0.6 Nm ThermalResisance Parameer Symbol Condiions Max.Value Uni Characerisic Diode hermal resisance, 1) juncion case Thermal resisance juncion ambien Rh(jc) 1.05 K/W Rh(ja) 62 K/W ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni SaicCharacerisic Diode forward volage Reverse leakage curren VF IR IF=30.0A Tvj=25 C Tvj=125 C Tvj=175 C VR=650V Tvj=25 C Tvj=175 C 1.35 1.30 1.26 4.0 800.0 1.70 40.0 V µa ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni DynamicCharacerisic Inernal emier inducance measured 5mm (0.197 in.) from case LE 7.0 nh 1) Please be aware ha in non sandard load condiions, due o high Rh(jc), Tvj close o Tvjmax can be reached. 4 Rev.2.1,20140918
EmierConrolledDiodeRapid1Series SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=25 C Diode reverse recovery ime rr Tvj=25 C, 64 ns Diode reverse recovery charge VR=400V, Qrr 0.67 µc IF=30.0A, Diode peak reverse recovery curren Irrm dif/d=1000a/µs, 16.0 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 1250 A/µs recoverycurrenduringb swich IKW50N65H5 Diode reverse recovery ime rr Tvj=25 C, 95 ns Diode reverse recovery charge VR=400V, Qrr 0.51 µc IF=30.0A, Diode peak reverse recovery curren Irrm dif/d=300a/µs, 7.0 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 600 A/µs recoverycurrenduringb swich IKW50N65H5 SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=175 C/125 C Diode reverse recovery ime rr Tvj=175 C, 103 ns Diode reverse recovery charge VR=400V, Qrr 1.41 µc IF=30.0A, Diode peak reverse recovery curren Irrm dif/d=1000a/µs, 23.0 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 1150 A/µs recoverycurrenduringb swich IKW50N65H5 Diode reverse recovery ime rr Tvj=125 C, 129 ns Diode reverse recovery charge VR=400V, Qrr 0.92 µc IF=30.0A, Diode peak reverse recovery curren Irrm dif/d=300a/µs, 10.3 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 580 A/µs recoverycurrenduringb swich IKW50N65H5 5 Rev.2.1,20140918
EmierConrolledDiodeRapid1Series 150 Po,POWERDISSIPATION[W] 125 100 75 50 25 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[ C] Figure 1. Powerdissipaionasafuncionofcase emperaure (Tvj 175 C) Zh(jc),TRANSIENTTHERMALRESISTANCE[K/W] 1 0.1 D=0.5 0.01 1E6 1E5 1E4 0.001 0.01 0.1 p,pulsewidth[s] 0.2 0.1 0.05 0.02 0.01 single pulse i: 1 2 3 4 5 6 ri[k/w]: 0.018165 0.260192 0.287872 0.461564 0.023701 1.6E3 τi[s]: 2.6E5 1.8E4 1.4E3 6.0E3 0.096993 2.0799 Figure 2. Dioderansienhermalimpedanceasa funcionofpulsewidh (D=p/T) 180 160 Tj=25 C, IF = 30A Tj=175 C, IF = 30A 2.00 1.75 Tj=25 C, IF = 30A Tj=175 C, IF = 30A rr,reverserecoverytime[ns] 140 120 100 80 60 40 Qrr,REVERSERECOVERYCHARGE[µC] 1.50 1.25 1.00 0.75 0.50 20 0.25 0 200 600 1000 1400 1800 2200 2600 3000 dif/d,diodecurrentslope[a/µs] Figure 3. Typicalreverserecoveryimeasafuncionof diodecurrenslope (VR=400V) 6 0.00 200 600 1000 1400 1800 2200 2600 3000 dif/d,diodecurrentslope[a/µs] Figure 4. Typicalreverserecoverychargeasafuncion ofdiodecurrenslope (VR=400V) Rev.2.1,20140918
EmierConrolledDiodeRapid1Series 50 45 Tj=25 C, IF = 30A Tj=175 C, IF = 30A 0 200 Tj=25 C, IF = 30A Tj=175 C, IF = 30A Irrm,REVERSERECOVERYCURRENT[A] 40 35 30 25 20 15 10 dirr/d,diodepeakraeoffallofirr[a/µs] 400 600 800 1000 1200 1400 1600 5 1800 0 0 1000 2000 3000 4000 5000 dif/d,diodecurrentslope[a/µs] Figure 5. Typicalpeakreverserecoverycurrenasa funcionofdiodecurrenslope (VR=400V) 2000 200 600 1000 1400 1800 2200 2600 3000 dif/d,diodecurrentslope[a/µs] Figure 6. Typicaldiodepeakraeoffallofreverse recoverycurrenasafuncionofdiode currenslope (VR=400V) 60 50 Tj=25 C Tj=175 C 2.00 1.75 IF=15A IF=30A IF=60A IF,FORWARDCURRENT[A] 40 30 20 VF,FORWARDVOLTAGE[V] 1.50 1.25 1.00 10 0.75 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VF,FORWARDVOLTAGE[V] Figure 7. Typicaldiodeforwardcurrenasafuncionof forwardvolage 0.50 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[ C] Figure 8. Typicaldiodeforwardvolageasafuncionof juncionemperaure 7 Rev.2.1,20140918
Emier Conrolled Diode Rapid 1 Series PGTO22021 8 Rev. 2.1, 20140918
Emier Conrolled Diode Rapid 1 Series vge() 90% VGE a a 10% VGE b b ic() 90% IC 90% IC 10% IC 10% IC vce() d(off) f d(on) r vge() 90% VGE 10% VGE ic() CC 2% IC vce() 2 E = off V CE 4 x IC x d E 1 1 on = V CE x IC x d 2% VCE 3 2 3 4 9 Rev. 2.1, 20140918
Emier Conrolled Diode Rapid 1 Series Revision Hisory Revision: 20140918, Rev. 2.1 Previous Revision Revision Dae Subjecs (major changes since las revision) 2.1 20140918 Final daa shee We Lisen o Your Commens Any informaion wihin his documen ha you feel is wrong, unclear or missing a all? Your feedback will help us o coninuously improve he qualiy of his documen. Please send your proposal (including a reference o his documen) o: erraum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany 2014 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of noninfringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office (www.infineon.com). Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. The Infineon Technologies componen described in his Daa Shee may be used in lifesuppor devices or sysems and/or auomoive, aviaion and aerospace applicaions or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor, auomoive, aviaion and aerospace device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 10 Rev. 2.1, 20140918