Diode RapidSwitchingEmitterControlledDiode. IDP08E65D1 EmitterControlledDiodeRapid1Series. Datasheet. IndustrialPowerControl
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1 Diode RapidSwichingEmierConrolledDiode EmierConrolledDiodeRapid1Series Daashee IndusrialPowerConrol
2 EmierConrolledDiodeRapid1Series RapidSwichingEmierConrolledDiode Feaures: 65VEmierConrolledechnology Temperauresablebehaviourofkeyparameers Lowforwardvolage(VF) Ulrafasrecovery Lowreverserecoverycharge(Qrr) Lowreverserecoverycurren(Irrm) Sofnessfacor>1 175 Cjuncionoperaingemperaure Pbfreeleadplaing;RoHScomplian A C Applicaions: C AC/DCconverers BoosdiodeinPFCsages Freewheelingdiodesininverersandmoordrives Generalpurposeinverers Swichmodepowersupplies C A KeyPerformanceandPackageParameers Type Vrrm If Vf,Tvj=25 C Tvjmax Marking Package 65V 8A 1.35V 175 C E8ED1 PGTO Rev.2.2,
3 EmierConrolledDiodeRapid1Series TableofConens Descripion Table of Conens Maximum Raings Thermal Resisance Elecrical Characerisics Elecrical Characerisics Diagrams Package Drawing Tesing Condiions Revision Hisory Disclaimer Rev.2.2,
4 EmierConrolledDiodeRapid1Series MaximumRaings Foropimumlifeimeandreliabiliy,Infineonrecommendsoperaingcondiionshadonoexceed8%ofhemaximumraingssaedinhisdaashee. Parameer Symbol Value Uni Repeiive peak reverse volage VRRM 65 V Diodeforwardcurren,limiedbyTvjmax TC=25 C TC=1 C IF Diodepulsedcurren,plimiedbyTvjmax IFpuls 24. A Diode surge non repeiive forward curren TC=25 C,p=1.ms,sinehalfwave PowerdissipaionTC=25 C Po 56. W Operaing juncion emperaure Tvj C Sorage emperaure Tsg C Soldering emperaure, wave soldering 1.6 mm (.63 in.) from case for 1s 26 Mouning orque, M3 screw Maximum of mouning processes: 3 IFSM 64. A A C M.6 Nm ThermalResisance Parameer Symbol Condiions Max.Value Uni Characerisic Diode hermal resisance, 1) juncion case Thermal resisance juncion ambien Rh(jc) 2.69 K/W Rh(ja) 62 K/W ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni SaicCharacerisic Diode forward volage Reverse leakage curren VF IR IF=8.A Tvj=25 C Tvj=125 C Tvj=175 C VR=65V Tvj=25 C Tvj=175 C V µa ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni DynamicCharacerisic Inernal emier inducance measured 5mm (.197 in.) from case LE 7. nh 1) Please be aware ha in non sandard load condiions, due o high Rh(jc), Tvj close o Tvjmax can be reached. 4 Rev.2.2,
5 EmierConrolledDiodeRapid1Series SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=25 C Diode reverse recovery ime rr Tvj=25 C, 51 ns Diode reverse recovery charge VR=4V, Qrr.2 µc IF=8.A, Diode peak reverse recovery curren Irrm dif/d=1a/µs 7.9 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 42 A/µs Diode reverse recovery ime rr Tvj=25 C, 8 ns Diode reverse recovery charge VR=4V, Qrr.17 µc IF=8.A, Diode peak reverse recovery curren Irrm dif/d=2a/µs 2.8 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 31 A/µs SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=175 C/125 C Diode reverse recovery ime rr Tvj=175 C, 81 ns Diode reverse recovery charge VR=4V, Qrr.49 µc IF=8.A, Diode peak reverse recovery curren Irrm dif/d=1a/µs 1.5 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 3 A/µs Diode reverse recovery ime rr Tvj=125 C, 11 ns Diode reverse recovery charge VR=4V, Qrr.32 µc IF=8.A, Diode peak reverse recovery curren Irrm dif/d=2a/µs 4.7 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 21 A/µs 5 Rev.2.2,
6 EmierConrolledDiodeRapid1Series 6 Po,POWERDISSIPATION[W] IF,FORWARDCURRENT[A] TC,CASETEMPERATURE[ C] Figure 1. Powerdissipaionasafuncionofcase emperaure (Tvj 175 C) TC,CASETEMPERATURE[ C] Figure 2. Diodeforwardcurrenasafuncionofcase emperaure (Tvj 175 C) Zh(jc),TRANSIENTTHERMALRESISTANCE[K/W] D= single pulse i: ri[k/w]: E3 τi[s]: 1.3E5 1.3E4 6.5E4 4.7E E6 1E5 1E p,pulsewidth[s] Figure 3. Dioderansienhermalimpedanceasa funcionofpulsewidh (D=p/T) rr,reverserecoverytime[ns] Tj=25 C, IF = 8A Tj=125 C, IF = 8A Tj=175 C, IF = 8A dif/d,diodecurrentslope[a/µs] Figure 4. Typicalreverserecoveryimeasafuncionof diodecurrenslope (VR=4V) 6 Rev.2.2,
7 Emier Conrolled Diode Rapid 1 Series.6 2 Tj=25 C, IF = 8A Tj=125 C, IF = 8A Tj=175 C, IF = 8A 18 Irrm, REVERSE RECOVERY CURRENT [A] Qrr, REVERSE RECOVERY CHARGE [µc] Tj=25 C, IF = 8A Tj=125 C, IF = 8A Tj=175 C, IF = 8A dif/d, DIODE CURRENT SLOPE [A/µs] dif/d, DIODE CURRENT SLOPE [A/µs] Figure 5. Typical reverse recovery charge as a funcion Figure 6. Typical peak reverse recovery curren as a of diode curren slope funcion of diode curren slope (VR=4V) (VR=4V) 16 Tj=25 C, IF = 8A Tj=125 C, IF = 8A Tj=175 C, IF = 8A Tj=25 C Tj=175 C 14 4 IF, FORWARD CURRENT [A] dirr/d, diode peak rae of fall of Irr [A/µs] dif/d, DIODE CURRENT SLOPE [A/µs] VF, FORWARD VOLTAGE [V] Figure 7. Typical diode peak rae of fall of reverse recovery curren as a funcion of diode curren slope (VR=4V) Figure 8. Typical diode forward curren as a funcion of forward volage 7 Rev. 2.2,
8 Emier Conrolled Diode Rapid 1 Series 2. IF=2A IF=4A IF=8A IF=12A IF=16A VF, FORWARD VOLTAGE [V] Tvj, JUNCTION TEMPERATURE [ C] Figure 9. Typical diode forward volage as a funcion of juncion emperaure 8 Rev. 2.2,
9 Emier Conrolled Diode Rapid 1 Series PGTO Rev. 2.2,
10 Emier Conrolled Diode Rapid 1 Series vge() 9% VGE a a 1% VGE b b ic() 9% IC 9% IC 1% IC 1% IC vce() d(off) f d(on) r vge() 9% VGE 1% VGE ic() CC 2% IC vce() 2 E = off V CE 4 x IC x d E 1 1 on = V CE x IC x d 2% VCE Rev. 2.2,
11 Emier Conrolled Diode Rapid 1 Series Revision Hisory Revision: , Rev. 2.2 Previous Revision Revision Dae Subjecs (major changes since las revision) Preliminary daa shee Final daa shee New Marking Paern We Lisen o Your Commens Any informaion wihin his documen ha you feel is wrong, unclear or missing a all? Your feedback will help us o coninuously improve he qualiy of his documen. Please send your proposal (including a reference o his documen) o: erraum@infineon.com Published by Infineon Technologies AG Munich, Germany München, Germany 214 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of noninfringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office ( Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. The Infineon Technologies componen described in his Daa Shee may be used in lifesuppor devices or sysems and/or auomoive, aviaion and aerospace applicaions or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor, auomoive, aviaion and aerospace device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 11 Rev. 2.2,
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