12V 15A IGBT Module MG1215W-XN2MM RoHS Features High level of integration IGBT 3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solderable pins for PCB mounting Temperature sense included Applications AC motor control Motion/servo control Inverter and power supplies Module Characteristics ( Symbol Parameters Test Conditions Min Typ Max Unit max) Max. Junction Temperature 15 C op Operating Temperature -4 125 C T stg Storage Temperature -4 125 C V isol Insulation Test Voltage AC, t=1min 3 V CTI Comparative Tracking Index 25 M d Mounting Torque Recommended (M5) 2.5 5 N m Weight 3 g Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit IGBT V CES Collector - Emitter Voltage =25 C 12 V V GES Gate - Emitter Voltage ±2 V I C T DC Collector Current C =25 C 2 A T C =8 C 15 A I CM Repetitive Peak Collector Current t p =1ms 3 A P tot Power Dissipation Per IGBT 625 W Diode V RRM Repetitive Reverse Voltage =25 C 12 V I F(AV) T C =25 C 2 A Average Forward Current T C =8 C 15 A I FRM Repetitive Peak Forward Current t p =1ms 3 A I 2 t =125 C, t=1ms, V R =V 435 A 2 s MG1215W-XN2MM 24 1 215 Littelfuse, Inc Revised:12/4/14
12V 15A IGBT Module Electrical and Thermal Specifications ( Symbol Parameters Test Conditions Min Typ Max Unit IGBT V GE(th) Gate - Emitter Threshold Voltage V CE =V GE, I C =6.mA 5. 5.8 6.5 V V CE(sat) Collector - Emitter I C =15A, V GE =15V, =25 C 1.7 V Saturation Voltage I C =15A, V GE =15V, =125 C 1.9 V I ICES Collector Leakage Current V CE =12V, V GE =V, =25 C 1 ma V CE =12V, V GE =V, =125 C 1 ma I GES Gate Leakage Current V CE =V, V GE =±15V, =125 C -4 4 na R Gint Integrated Gate Resistor 5. Ω Q ge Gate Charge V CE =6V, I C =15A, V GE =±15V 1.4 μc C ies Input Capacitance 1.5 nf C res Reverse Transfer Capacitance V CE =25V, V GE =V, f =1MHz.4 nf t d(on) t r t d(off) t f E on E off Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time Turn - on Energy Turn - off Energy V CC =6V I C =15A R G =2.4Ω V GE =±15V Inductive Load =25 C 26 ns =125 C 29 ns =25 C 3 ns =125 C 5 ns =25 C 42 ns =125 C 52 ns =25 C 7 ns =125 C 9 ns =25 C 12 mj =125 C 16 mj =25 C 11 mj =125 C 14.5 mj I SC Short Circuit Current t psc 1μS, V GE =15V; =125 C, V CC =9V 6 A R thjc Junction-to-Case Thermal Resistance (Per IGBT).2 K/W Diode V F Forward Voltage I F =15A, V GE =V, =25 C 1.65 V I F =15A, V GE =V, =125 C 1.65 V t RR Reverse Recovery Time I F =15A, V R =6V 35 ns I RRM Max. Reverse Recovery Current di F /dt=36a/µs 16 A E rec Reverse Recovery Energy =125 C 13.5 mj R thjcd Junction-to-Case Thermal Resistance (Per Diode).36 K/W NTC Characteristics ( Symbol Parameters Test Conditions Min Typ Max Unit R 25 Resistance T c =25 C 5 KΩ B 25/5 3375 K MG1215W-XN2MM 241 2 215 Littelfuse, Inc Revised:12/4/14
12V 15A IGBT Module Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 3 3 24 18 12 V GE =15V T j =25 C 24 18 12 V GE =19V V GE =17V V GE =15V V GE =13V V GE =11V V GE = 9V =125 C 6 6.5 1. 1.5 2. 2.5 3. V CE V 3.5.5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. V CE V Figure 3: Typical Transfer Characteristics Figure 4: Switching Energy vs. Gate Resistor 3 24 18 12 V CE =2V T j =25 C Eon Eoff (mj) 35 3 25 2 15 1 V CE=6V I C=15A V GE=±15V E on E off 6 5 5 6 7 8 9 1 11 V GE V 12 2 4 6 8 1 12 14 16 Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area 4 3 V CE=6V R G=2.4Ω V GE=±15V E on 35 3 25 Eon Eoff (mj) 2 1 E off 2 15 1 5 R G=2.4Ω V GE=±15V 5 1 15 2 25 I C A 3 2 4 6 8 1 12 V CE V 14 MG1215W-XN2MM 242 3 215 Littelfuse, Inc Revised:12/4/14
12V 15A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: Switching Energy vs. Gate Resistort for Diode Inverter 3 24 2. 16. I F=15A V CE=6V IF (A) 18 12 Erec (mj) 12. 8. 6 4. T j =25 C.6 1.2 1. 8 V F V 2.4 2 4 6 8 1 12 14 16 R G Ω Figure 9: Switching Energy vs. Forward Current for Diode Inverter Figure 1: Transient Thermal Impedance of Diode and IGBT Inverter 2. 1 16. R G=2.4Ω V CE=6V Diode Erec (mj) 12. 8. ZthJC (K/W).1 IGBT 4. 5 1 15 I F (A) 2 25 3.1.1.1.1 1 1 Rectangular Pulse Duration (seconds) Figure 11: NTC Characteristics 1 VI F=25A GE =15V V CE=6V T Vj =125 C 1 R ( ) T Vj =25 C R 1 T Vj =125 C 1 2 4 6 8 1 T C C 12 14 16 MG1215W-XN2MM 243 215 Littelfuse, Inc Revised:12/4/14
12V 15A IGBT Module Circuit Diagram Part Numbering System Part Marking System MG1215 W-X N2MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 12V CURRENT RATING ASSEMBLY SITE WAFER TYPE CIRCUIT TYPE X:X PACKAGE TYPE 15: 15A W: Package W MG1215W-XN2MM LOT NUMBER Space reserved for QR code Packing Options Part Number Marking Weight Packing Mode M.O.Q MG1215W-XN2MM MG1215W-XN2MM 3g Bulk Pack 2 MG1215W-XN2MM 244 5 215 Littelfuse, Inc Revised:12/4/14
12V 15A IGBT Module Dimensions-Package W Ø Dimensions (mm) MG1215W-XN2MM 245 6 215 Littelfuse, Inc Revised:12/4/14