2V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET ZXMD63C2X SUMMARY N-CHANNEL: V(BR)DSS=2V; RDS(ON)=.3 ; ID=2.4A P-CHANNEL: V(BR)DSS=-2V; RDS(ON)=.27 ; ID=-.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION N-CHANNEL P-CHANNEL DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL Top View ZXMD63C2XTA 7 2mm embossed units ZXMD63C2XTC 3 2mm embossed 4 units DEVICE MARKING ZXM63C2 PROVISIONAL ISSUE A - JUNE 999
ZXMD63C2X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain-Source Voltage V DSS 2-2 V Gate- Source Voltage V GS ± 2 V Continuous Drain Current (V GS =4.5V; T A =25 C)(b)(d) (V GS =4.5V; T A =7 C)(b)(d) THERMAL RESISTANCE I D 2.4.9 -.7 -.35 Pulsed Drain Current (c)(d) I DM 9-9.6 A Continuous Source Current (Body Diode)(b)(d) I S -.5 -.4 A Pulsed Source Current (Body Diode)(c)(d) I SM 9-9.6 A Power Dissipation at T A =25 C (a)(d) Linear Derating Factor Power Dissipation at T A =25 C (a)(e) Linear Derating Factor Power Dissipation at T A =25 C (b)(d) Linear Derating Factor P D.87 6.9 P D.4 8.3 P D.25 PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θja 43 C/W Junction to Ambient (b)(d) R θja C/W Junction to Ambient (a)(e) R θja 2 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. A W mw/ C W mw/ C W mw/ C Operating and Storage Temperature Range T j :T stg -55 to +5 C PROVISIONAL ISSUE A - JUNE 999 2
ZXMD63C2X N-CHANNEL CHARACTERISTICS DC s ms ms ms us.. VDS - Drain-Source Voltage (V) Safe Operating Area Max Power Dissipation (Watts).4.2..8.6.4.2 Refer Note (b) 2 4 6 8 2 4 6 T - Temperature ( ) Derating Curve Thermal Resistance ( C/W) 2 8 6 4 D=.5 Refer Note (b) D=.2 2 D=. D=.5 Single Pulse.... Pulse Width (s) Transient Thermal Impedance Thermal Resistance ( C/W) 6 4 2 8 6 4 2 D=.5 D=.2 D=. D=.5 Single Pulse.... Pulse Width (s) Transient Thermal Impedance PROVISIONAL ISSUE A - JUNE 999 3
ZXMD63C2X P-CHANNEL CHARACTERISTICS DC s ms ms ms µs.. VDS - Drain-Source Voltage (V) Safe Operating Area Max Power Dissipation (Watts).4.2..8.6.4.2 Refer Note (b) 2 4 6 8 2 4 6 T - Temperature ( ) Derating Curve 2 6 Thermal Resistance ( C/W) 8 6 4 D=.5 Refer Note (b) D=.2 2 D=. D=.5 Single Pulse.... Pulse Width (s) Transient Thermal Impedance Thermal Resistance ( C/W) 4 2 8 6 4 2 D=.5 D=.2 D=. D=.5 Single Pulse.... Pulse Width (s) Transient Thermal Impedance PROVISIONAL ISSUE A - JUNE 999 4
N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC ZXMD63C2X Drain-Source Breakdown Voltage V (BR)DSS 2 V I D =25µA, V GS =V Zero Gate Voltage Drain Current I DSS µa V DS =2V, V GS =V Gate-Body Leakage I GSS na V GS =± 2V, V DS =V Gate-Source Threshold Voltage V GS(th).7 V I D =25µA, V DS = V GS Static Drain-Source On-State Resistance () R DS(on).3.5 Ω Ω V GS =4.5V, I D =.7A V GS =2.7V, I D =.85A Forward Transconductance (3) g fs 2.6 S V DS =V,I D =.85A DYNAMIC (3) Input Capacitance C iss 35 pf Output Capacitance C oss 2 pf Reverse Transfer Capacitance C rss 5 pf V DS =5 V, V GS =V, f=mhz SWITCHING(2) (3) Turn-On Delay Time t d(on) 3.4 ns Rise Time t r 8. ns Turn-Off Delay Time t d(off) 3.5 ns Fall Time t f 9. ns Total Gate Charge Q g 6 nc Gate-Source Charge Q gs.65 nc Gate Drain Charge Q gd 2.5 nc V DD =V, I D =.7A R G =6.Ω, R D =5.7Ω (Refer to test circuit) V DS =6V,V GS =4.5V, I D =.7A (Refer to test circuit) SOURCE-DRAIN DIODE Diode Forward Voltage () V SD.95 V T j =25 C, I S =.7A, V GS =V Reverse Recovery Time (3) t rr 5. ns T j =25 C, I F =.7A, di/dt= A/µs Reverse Recovery Charge(3) Q rr 5.9 nc () Measured under pulsed conditions. Width=3µs. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JUNE 999 5
ZXMD63C2X N-CHANNEL TYPICAL CHARACTERISTICS +25 C +5 C 5V 4.5V 4V 3.5V VGS 3V 2.5V 2V 5V 4.5V 4V 3.5V VGS 3V 2.5V 2V.. VDS - Drain-Source Voltage (V) Output Characteristics.. VDS - Drain-Source Voltage (V) Output Characteristics VDS=V T=5 C T=25 C..5 2 2.5 3 3.5 4 VGS - Gate-Source Voltage (V) Typical Transfer Characteristics Normalised RDS(on) and VGS(th).8.6.4.2..8.6.4.2 - -5 5 RDS(on) VGS=4.5V ID=.7A VGS(th) VGS=VDS ID=25uA 5 Tj - Junction Temperature ( C) Normalised RDS(on) and VGS(th) v Temperature 2 RDS(on) - Drain-Source On-Resistance (Ω). VGS=3V VGS=5V....2.4.6.8..2.4 On-Resistance v Drain Current ISD - Reverse Drain Current (A) T=5 C T=25 C VSD - Source-Drain Voltage (V) Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JUNE 999 6
ZXMD63C2X N-CHANNEL CHARACTERISTICS C - Capacitance (pf) 8 7 6 5 4 3 2 Ciss Coss Crss Vgs=V f=mhz. 2 3 4 5 6 VDS - Drain Source Voltage (V) Capacitance v Drain-Source Voltage VGS - Gate-Source Voltage (V) 5 4 3 2 ID=.7A VDS=6V Q -Charge (nc) Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JUNE 999 7
ZXMD63C2X P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -2 V I D =-25µA, V GS =V Zero Gate Voltage Drain Current I DSS - µa V DS =-2V, V GS =V Gate-Body Leakage I GSS ± na V GS =± 2V, V DS =V Gate-Source Threshold Voltage V GS(th) -.7 V I D =-25µA, V DS = V GS Static Drain-Source On-State Resistance () R DS(on).27.4 Ω Ω V GS =-4.5V, I D =-.2A V GS =-2.7V, I D =-.6A Forward Transconductance (3) g fs.3 S V DS =-V,I D =-.6A DYNAMIC (3) Input Capacitance C iss 29 pf Output Capacitance C oss 2 pf Reverse Transfer Capacitance C rss 5 pf V DS =-5 V, V GS =V, f=mhz SWITCHING(2) (3) Turn-On Delay Time t d(on) 3.4 ns Rise Time t r 9.6 ns Turn-Off Delay Time t d(off) 6.4 ns Fall Time t f 2.4 ns Total Gate Charge Q g 5.25 nc Gate-Source Charge Q gs. nc Gate Drain Charge Q gd 2.25 nc V DD =-V, I D =-.2A R G =6.Ω, R D =8.3Ω (Refer to test circuit) V DS =-6V,V GS =-4.5V, I D =-.2A (Refer to test circuit) SOURCE-DRAIN DIODE Diode Forward Voltage () V SD -.95 V T j =25 C, I S =-.2A, V GS =V Reverse Recovery Time (3) t rr 2.7 ns T j =25 C, I F =-.2A, di/dt= A/µs Reverse Recovery Charge(3) Q rr 9.6 nc () Measured under pulsed conditions. Width=3µs. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JUNE 999 8
P-CHANNEL CHARACTERISTICS ZXMD63C2X - +25 C 5V 4.5V 4V 3.5V 3V 2.5V -VGS 2V - +5 C 5V 4.5V 4V 3.5V 3V 2.5V -VGS 2V.. -VDS - Drain-Source Voltage (V) Output Characteristics.. -VDS - Drain-Source Voltage (V) Output Characteristics - VDS=-V T=5 C T=25 C..5 2 2.5 3 3.5 4 -VGS - Gate-Source Voltage (V) Typical Transfer Characteristics 4.5 Normalised RDS(on) and VGS(th).6.4.2..8.6.4 - RDS(on) VGS(th) -5 5 VGS=-4.5V ID=-.2A VGS=VDS ID=-25uA 5 Tj - Junction Temperature ( C) Normalised RDS(on) and VGS(th) v Temperature 2 RDS(on) - Drain-Source On-Resistance (Ω) VGS=-3V VGS=-5V....2.4.6.8..2.4 - On-Resistance v Drain Current -ISD - Reverse Drain Current (A). T=5 C T=25 C -VSD - Source-Drain Voltage (V) Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JUNE 999 9
ZXMD63C2X P-CHANNEL TYPICAL TYPICAL CHARACTERISTICS CHARACTERISTICS C - Capacitance (pf) 7 6 5 4 3 2 Ciss Coss Crss Vgs=V f=mhz..5.5 2 2.5 3 3.5 4 4.5 -VDS - Drain Source Voltage (V) Capacitance v Drain-Source Voltage VGS - Gate-Source Voltage (V) 5 4.5 4 3.5 3 2.5 2.5.5 ID=-.2A VDS=-6V Q -Charge (nc) Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JUNE 999
ZXMD63C2X PACKAGE DIMENSIONS D DIM Millimetres Inches MIN MAX MIN MAX A..43 8 7 6 5 A.5.5.2.6 E e X 6 2 3 4 H θ B.25.4..6 C.3.23.5.9 D 2.9 3..4.22 e.65 BSC.256 BSC A A B C L E 2.9 3..4.22 H 4.9 BSC.93 BSC Conforms to JEDEC MO-87 Iss A PAD LAYOUT DETAILS L.4.7.6.28 q 6 6 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)6 622 4422 (Sales), (44)6 622 4444 (General Enquiries) Fax: (44)6 622 442 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 9 47 Mall Drive, Unit 4 35 Metroplaza, Tower 2 agents and distributors in D-8673 München Commack NY 725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong Zetex plc 999 Telefon: (49) 89 45 49 49 Telephone: (56) 543-7 Telephone:(852) 26 6 Fax: (49) 89 45 49 49 49 Fax: (56) 864-763 Fax: (852) 2425 494 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JUNE 999 2