AP1T1AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching haracteristics Low Gate harge R DS(ON) 16mΩ G RoHS-compliant, halogen-free I D 9A S BV DSS 1V Description Advanced Power MOSFETs from APE provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP1T1GAH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power D/D converters. G D S TO-252 (H) Absolute Maximum Ratings V DS V GS I D I D I DM Symbol Parameter Rating Units Drain-Source Voltage 1 V P D at T =25 Total Power Dissipation 2 W P D at T A =25 Total Power Dissipation 2 W T STG T J Gate-Source Voltage ±2 V at T =25 ontinuous Drain urrent 3 9 A at T =1 ontinuous Drain urrent 3 5.6 A Thermal Data Pulsed Drain urrent 1 3 A Storage Temperature Range -55 to 15 Operating Junction Temperature Range -55 to 15 Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PB mount) 3 62.5 /W Ordering Information AP1T1AGH-HF-3TR RoHS-compliant halogen-free TO-252 shipped on tape and reel (3 pcs/reel) 21611-3 1/5
AP1T1AGH-HF-3 Electrical Specifications at T j =25 (unless otherwise specified) Symbol Parameter Test onditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =25uA 1 - - V R DS(ON) Static Drain-Source On-Resistance 2 V GS = 1V, I D = 5A - - 16 mω V GS =.5V, I D = 1A - - 225 mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =25uA 1-3 V g fs Forward Transconductance V DS =1V, I D =5A - 5. - S I DSS Drain-Source Leakage urrent V DS =V, V GS =V - - 25 ua Drain-Source Leakage urrent (T j =125 o ) V DS =V,V GS =V - - 25 ua I GSS Gate-Source Leakage V GS =±2V - - ±1 na Q g Total Gate harge 2 I D = 5A - 6 9.6 n Q gs Gate-Source harge V DS =V - 1.7 - n Q gd Gate-Drain ("Miller") harge V GS =.5V - - n t d(on) Turn-on Delay Time 2 V DS =5V - 6 - ns t r Rise Time I D = 5A - 1 - ns t d(off) Turn-off Delay Time R G =3.3Ω, - 1.5 - ns t f Fall Time V GS = 1V - - ns iss Input apacitance V GS =V - 6 pf oss Output apacitance V DS =25V - 55 - pf rss Reverse Transfer apacitance f=1.mhz - 35 - pf Source-Drain Diode Symbol Parameter Test onditions Min. Typ. Max. Units V SD Forward On Voltage 2 I S = 5A, V GS =V - - 1.3 V t rr Reverse Recovery Time 2 I S = 5A, V GS =V - - ns Q rr Reverse Recovery harge di/dt=1a/µs - 75 - n Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 3µs, duty cycle < 2% 3.Surface mounted on 1 in 2 copper pad of FR board, THIS PRODUT IS SENSITIVE TO ELETROSTATI DISHARGE, PLEASE HANDLE WITH AUTION. USE OF THIS PRODUT AS A RITIAL OMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APE DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONVEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APE RESERVES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROVE RELIABILITY, FUNTION OR DESIGN. 2/5
AP1T1AGH-HF-3 Typical Electrical haracteristics I D, Drain urrent (A) 2 16 12 T =25 o 1V 7.V 6.V 5.V V G =.V I D, Drain urrent (A) 16 12 T = 15 o 1V.V 7.V 6.V V G = 5.V 2 6 2 6 1 12 Fig 1. Typical Output haracteristics Fig 2. Typical Output haracteristics 2 2. I D =1A T =25 o I D =5A V G =1V 1 2. R DS(ON) (mω) 16 1 Normalized R DS(ON) 1.6 1.2 12. 1. 2 6 1-5 5 1 15 V GS Gate-to-Source Voltage (V) T j, Junction Temperature ( o ) Fig 3. On-Resistance vs. Gate Voltage Fig. Normalized On-Resistance vs. Junction Temperature 1 1.6 I S (A) 6 T j =15 o T j =25 o Normalized V GS(th) (V) 1.2.. 2.2..6. 1 1.2 1. V SD, Source-to-Drain Voltage (V). -5 5 1 15 T j, Junction Temperature ( o ) Fig 5. Forward haracteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature 3/5
AP1T1AGH-HF-3 1 f=1.mhz V GS, Gate to Source Voltage (V) 6 2 I D =5A V DS =V (pf) 6 2 iss 2 6 1 12 Q G, Total Gate harge (n) 1 5 9 13 17 21 25 29 V DS,Drain-to-Source Voltage (V) oss rss Fig 7. Gate harge haracteristics Fig. Typical apacitance haracteristics 1 1 I D (A) 1 1 Operation in this area limited by R DS(ON) T c =25 o Single Pulse 1us 1ms 1ms 1ms D Normalized Thermal Response (R thjc ).1.2.1.5.2.1 Duty factor=.5 Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thjc + T.1.1 1 1 1 1.1.1.1.1.1.1 1 t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 1. Effective Transient Thermal Impedance V DS 9% V G.5V Q G Q GS Q GD 1% V GS t d(on) t r t d(off) t f harge Q Fig 11. Switching Time Waveforms Fig 12. Gate harge Waveform /5
AP1T1AGH-HF-3 Package Dimensions: TO-252 D D1 E3 E2 E1 Millimeters SYMBOLS MIN NOM MAX A2 1. 2.3 2. A3..5.6 B1..7 1. D 6. 6.5 7. D1. 5.35 5.9 E3 3.5..5 F 2.2 2.63 3.5 F1.5.5 1.2 E1 5.1 5.7 6.3 E2.5 1.1 1. e -- 2.3 --.35.5.65 B1 F1 F e e 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. A2 R :.127~.31 A3 (.1mm Marking Information: TO-252 Laser Marking Product: AP1T1A 1T1AGH YWWSSS Package code GH = RoHS-compliant halogen-free TO-252 Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence 5/5