N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 madc Total Device Dissipation @ TC = 25 C Derate above 25 C PD 350 2.8 mw mw/ C Junction Temperature Range TJ 65 to +150 C Storage Temperature Range Tstg 65 to +150 C 1 2 3 CASE 29 11, STYLE 5 TO 92 (TO 226AA) ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate Source Breakdown Voltage (IG = 10 µadc, VDS = 0) V(BR)GSS 25 Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS 1.0 nadc Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V) Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V, TA = 100 C) ON CHARACTERISTICS Zero Gate Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Gate Source Forward Voltage (IG(f) = 1.0 madc, VDS = 0) Drain Source On Voltage (ID = 7.0 madc, VGS = 0) Static Drain Source On Resistance (ID = 0.1 madc, VGS = 0) 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%. SMALL SIGNAL CHARACTERISTICS Small Signal Drain Source ON Resistance (VGS = 0, ID = 0, f = 1.0 khz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) SWITCHING CHARACTERISTICS ID(off) 10 2.0 nadc µadc IDSS 15 madc VGS(f) 1.0 Vdc VDS(on) 1.5 Vdc rds(on) 150 Ohms rds(on) 150 Ohms Ciss 5.0 pf Crss 1.2 pf Turn On Delay Time (VDD = 10 Vdc, ID(on) = 7.0 madc, td(on) 5.0 ns Rise Time VGS(on) = 0, VGS(off) = 10 Vdc) (See Figure 1) tr 5.0 ns Turn Off Delay Time (VDD = 10 Vdc, ID(on) = 7.0 madc, td(off) 15 ns Fall Time VGS(on) = 0, VGS(off) = 10 Vdc) (See Figure 1) tf 10 ns Semiconductor Components Industries, LLC, 2001 November, 2001 Rev. 3 1 Publication Order Number: 2N5555/D
Figure 1. Switching Times Test Circuit COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C) Figure 2. Input Admittance (yis) Figure 3. Reverse Transfer Admittance (yrs) Figure 4. Forward Transadmittance (yfs) Figure 5. Output Admittance (yos) 2
COMMON SOURCE CHARACTERISTICS S PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C, Data Points in MHz) Figure 6. S11s Figure 7. S12s Figure 8. S21s Figure 9. S22s 3
COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25 C) Figure 10. Input Admittance (yig) Figure 11. Reverse Transfer Admittance (yrg) Figure 12. Forward Transfer Admittance (yfg) Figure 13. Output Admittance (yog) 4
COMMON GATE CHARACTERISTICS S PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C, Data Points in MHz) Figure 14. S11g Figure 15. S12g Figure 16. S21g Figure 17. S22g 5
PACKAGE DIMENSIONS TO 92 (TO 226AA) CASE 29 11 ISSUE AL A B R P L K X X D G H J V C N SECTION X X N 6
Notes 7
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