PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
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1 Preferred Devices PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO 92 package which is designed for through hole applications. PNP SILICON BIAS RESISTOR TRANSISTOR MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current I C 0 madc Total Power T A = 25 C (1.) Derate above 25 C THERMAL CHARACTERISTICS P D mw mw/ C Characteristic Symbol Value Unit Thermal Resistance, Junction to Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath R θja 357 C/W T J, T stg DEVICE MARKING AND RESISTOR VALUES 55 to +150 T L 260 Device Marking R1 (K) R2 (K) Shipping /Box 1. Device mounted on a FR 4 glass epoxy printed circuit board using the minimum recommended footprint. C C Sec CASE 29 TO 92 (TO 226) STYLE Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 Rev. 2 1 Publication Order Number: /D This datasheet has been downloaded from at this page
2 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Base Cutoff Current (V CB = 50 V, I E = 0) I CBO 0 nadc Collector Emitter Cutoff Current (V CE = 50 V, I B = 0) I CEO 500 nadc Emitter Base Cutoff Current I EBO 0.5 madc (V EB = 6.0 V, I C = 0) Collector Base Breakdown Voltage (I C = µa, I E = 0) V (BR)CBO 50 Vdc Collector Emitter Breakdown Voltage (2.) (I C = 2.0 ma, I B = 0) V (BR)CEO 50 Vdc ON CHARACTERISTICS (2.) DC Current Gain (V CE = V, I C = 5.0 ma) h FE Collector Emitter Saturation Voltage (I C = ma, I E = 0.3 ma) / (I C = ma, I E = 0.3 ma) / (I C = ma, I B = 5 ma) (I C = ma, I B = 1 ma) // (I C = ma, I B = 1 ma) / V CE(sat) 5 Vdc Output Voltage (on) (V CC = 5.0 V, V B = 2.5 V, R L = kω) (V CC = 5.0 V, V B = 3.5 V, R L = kω) V OL Vdc 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 2
3 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Output Voltage (off) V OH 4.9 Vdc (V CC = 5.0 V, V B = 0.5 V, R L = kω) DTA113T (V CC = 5.0 V, V B = 0.05 V, R L = kω) (V CC = 5.0 V, V B = 5 V, R L = kω) Input Resistor R kω Resistor Ratio // / // R 1 /R
4 TYPICAL ELECTRICAL CHARACTERISTICS θ Figure 1. Derating Curve Figure 2. V CE(sat) versus I C Figure 3. DC Current Gain Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current 4
5 TYPICAL ELECTRICAL CHARACTERISTICS Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain Figure 9. Output Capacitance Figure. Output Current versus Input Voltage Figure 11. Input Voltage versus Output Current 5
6 TYPICAL ELECTRICAL CHARACTERISTICS Figure 12. V CE(sat) versus I C Figure 13. DC Current Gain Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage Figure 16. Input Voltage versus Output Current 6
7 TYPICAL ELECTRICAL CHARACTERISTICS Figure 17. V CE(sat) versus I C Figure 18. DC Current Gain Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage Typical Application for PNP BRTs Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source 7
8 PACKAGE DIMENSIONS A B TO 92 (TO 226) CASE ISSUE AL R P L K X X D G H J V C N SECTION X X N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com N. American Technical Support: Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 /D
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BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
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Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
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BDW42 NPN,, BDW47 PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium power silicon NPN and PNP Darlington transistors are designed
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NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector
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