P D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C (1) 200 C/W. Characteristic Symbol Min Typ Max Unit.
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1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45 Vdc Emitter Base Voltage V EBO 6.5 Vdc Collector Current Continuous I C 200 madc Total Device T A = 25 C Derate above 25 C Total Device T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA (1) 200 C/W Thermal Resistance, Junction to Case R JC 83.3 C/W CASE 29 11, STYLE 1 TO 92 (TO 226AA) ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (2) (I C = 10 madc, I B = 0) V (BR)CEO 45 Vdc Collector Base Breakdown Voltage (I C = 100 Adc, I E = 0) Emitter Base Breakdown Voltage (I E = 10 µadc, I C = 0) Collector Cutoff Current (V CB = 30 Vdc, I E = 0) 1. R θja is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. V (BR)CBO 45 Vdc V (BR)EBO 6.5 Vdc I CBO nadc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 Rev. 1 1 Publication Order Number: MPSA18/D
2 MPSA18 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (2) DC Current Gain (I C = 10 µadc, V CE = 5.0 Vdc) (I C = 100 µadc, V CE = 5.0 Vdc) (I C = 1.0 madc, V CE = 5.0 Vdc) (I C = 10 madc, V CE = 5.0 Vdc) Collector Emitter Saturation Voltage (I C = 10 madc, I B = 0.5 madc) (I C = 50 madc, I B = 5.0 madc) Base Emitter On Voltage (I C = 1.0 madc, V CE = 5.0 Vdc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I C = 1.0 madc, V CE = 5.0 Vdc, f = 100 MHz) Collector Base Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) Emitter Base Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure (I C = 100 µadc, V CE = 5.0 Vdc, R S = 10 kω, f = 1.0 khz) (I C = 100 µadc, V CE = 5.0 Vdc, R S = 1.0 kω, f = 100 Hz) Equivalent Short Circuit Noise Voltage (I C = 100 µadc, V CE = 5.0 Vdc, R S = 1.0 kω, f = 100 Hz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. h FE V CE(sat) Vdc V BE(on) Vdc f T MHz C cb pf C eb pf NF V T 6.5 db nvhz Figure 1. Transistor Noise Model 2
3 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25 C) NOISE VOLTAGE µ Figure 2. Effects of Frequency Figure 3. Effects of Collector Current µ µ µ µ µ µ µ Figure 4. Noise Current Figure 5. Wideband Noise Figure µ µ µ 100 Hz NOISE DATA µ µ µ µ µ Figure 6. Total Noise Voltage Figure 7. Noise Figure 3
4 MPSA18 Figure 8. DC Current Gain Figure 9. On Voltages θ Figure 10. Temperature Coefficients Figure 11. Capacitance Figure 12. Current Gain Bandwidth Product 4
5 PACKAGE DIMENSIONS TO 92 (TO 226AA) CASE ISSUE AL A B R P L K X X D G H J V C N SECTION X X N 5
6 MPSA18 Notes 6
7 Notes 7
8 MPSA18 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+1) (Mon Fri 2:30pm to 7:00pm CET) ONlit german@hibbertco.com French Phone: (+1) (Mon Fri 2:00pm to 7:00pm CET) ONlit french@hibbertco.com English Phone: (+1) (Mon Fri 12:00pm to 5:00pm GMT) ONlit@hibbertco.com EUROPEAN TOLL FREE ACCESS*: *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (Mon Fri 8:00am to 5:00pm MST) ONlit spanish@hibbertco.com Toll Free from Mexico: Dial for Access then Dial ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (Tue Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlit asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 MPSA18/D
9 This datasheet has been download from: Datasheets for electronics components.
BC546, B BC547, A, B, C BC548, A, B, C
NPN Silicon MAXIMUM RATINGS Rating Symbol BC546 BC547 Unit Collector Emitter oltage CEO 65 45 30 dc Collector Base oltage CBO 80 50 30 dc Emitter Base oltage EBO 6.0 dc Collector Current Continuous I C
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