ACE3006M N-Channel Enhancement Mode MOSFET

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Description uses advanced trench technology to provide excellent R DS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features Low r DS(on) trench technology Low thermal impedance Fast switching speed Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters Absolute Maximum Ratings Parameter Symbol Limit Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 Continuous Drain Current T C =25 C I D 30 A Pulsed Drain Current b I DM 100 Continuous Source Current (Diode Conduction) a I S 30 A Power Dissipation T C =25 C P D 50 W Operating Junction and Storage Temperature Range T J, T stg -55 to 175 C VER 1.1 1

THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction-to-Ambient a R θja 40 C/W Maximum Junction-to-Case R θjc 3 Notes a. Surface Mounted on 1 x 1 FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics. b. Pulse width limited by maximum junction temperature. Packaging Type TO-252 G D S Ordering information XX + H Halogen - free Pb - free YM : TO252 VER 1.1 2

Electrical Characteristics T A =25, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250 ua 1 V Gate-Body Leakage I GSS V DS = 0 V, V GS = 20 V ±100 na V DS = 48 V, V GS = 0 V 1 ua Zero Gate Voltage Drain Current I DSS V DS = 48 V, V GS = 0 V, T J = 55 C 25 On-State Drain Current I D(on) V DS = 5 V, V GS = 10 V 34 A V GS = 10 V, I D = 20 A 38 mω Drain-Source On-Resistance r DS(on) V GS = 4.5 V, I D = 17 A 50 Forward Transconductance g fs V DS = 15 V, I D = 20 A 22 S Diode Forward Voltage V SD I S = 15 A, V GS = 0 V 0.86 V Dynamic Total Gate Charge Q g Gate-Source Charge Q gs V DS = 30 V, V GS = 4.5 V, I D = 20 A 5.3 Gate-Drain Charge Q gd 8.6 Turn-On Delay Time t d(on) Rise Time t r V DD = 30 V, R L = 1.5 Ω, I D = 20 A, V GEN = 10 12.8 Turn-Off Delay Time t d(off) V, R GEN = 6 Ω 53.1 Fall Time t f 18.6 Input Capacitance C iss Output Capacitance C oss V DS = 15 V, V GS = 0 V, f =1 MHz 147 ReverseTransfer Capacitance C rss 134 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. 16.5 10.0 1711 nc ns pf VER 1.1 3

Typical Performance Characteristics (N-Channel) ID-Drain Current (A) VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage VDS - Drain-to-Source Voltage (V) VDS-Drain-to-Source Voltage (V) 5. Output Characteristics 6. Capacitance VER 1.1 4

Typical Performance Characteristics Qg - Total Gate Charge (nc) TJ Junction Temperature( C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient VER 1.1 5

Packing Information TO-252 SYMBOL DIMENSIONAL REQMTS MIN NOM MAX E 6.40 6.60 6.731 L 1.40 1.52 1.77 L1 2.743 REF L2 0.508 BSC L3 0.89 1.27 L4 06.4 1.01 L5 D 6.00 6.10 6.223 H 9.40 10.00 10.40 b 0.64 0.76 0.88 b2 0.77 0.84 1.14 b3 5.21 5.34 5.46 e 2.286 BSC A 2.20 2.30 2.38 A1 0 0.127 c 0.45 0.50 0.60 c2 0.45 0.50 0.58 D1 5.30 E1 4.40 θ 0 10 VER 1.1 6

Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7