MSN4R22S 4V N-Channel Trench MOSFET General Description Features LEAD FREE Pb RoHS This Power MOSFET is produced using Maple semi s advanced Technology,which provides high performance in on-state Resistance,fast switching performance and excellent quality.this Power MOSFET is suitable device for Synchronous Rectification for Server and general purpose applications. - =4V - I D =A @ = -R DS(ON) <2.2mΩ @ = - Fast switching - % avalanche tested - % R g tested DDDD DDDD S S S G PDFN*6 GSSS Absolute Maximum Ratings T C = 2 C unless otherwise noted Symbol Parameter MSN4R22S Units S Drain-Source Voltage 4 V Drain Current - Continuous (T C = 2 ) A I D - Continuous (T C = ) 9. A I DM Drain Current - Pulsed (Note ) 4 A S Gate-Source Voltage ±2 V EAS Single Pulsed Avalanche Energy (Note 2) 2 mj Power Dissipation (T C = 2 ) 73.6 W P D - Derate above 2.9 W/ T J, T STG Operating and Storage Temperature Range - to + Maximum lead temperature for soldering purposes, T L /8" from case for seconds 3 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction-to-Case --.7 /W R θja Thermal Resistance, Junction-to-Ambient -- /W Ordering Information Part Number Temp.Range Package Packing RoHS Status MSN4R22S - ~+ PDFN*6 Tape&Reel Halogen Free
Electrical Characteristics T C = 2 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = V, I D = 2 ua 4 -- -- V BS / T J Breakdown Voltage Temperature Coefficient I D = 2 ua, Referenced to 2 --. -- V/ I DSS Zero Gate Voltage Drain Current = 4 V, = V -- -- ua = 32 V, T C = 2 -- -- ua I GSSF Gate-Body Leakage Current, Forward = 2 V, = V -- -- na I GSSR Gate-Body Leakage Current, Reverse = -2 V, = V -- -- - na On Characteristics (th) Gate Threshold Voltage =, I D = 2 ua. -- 3. V R DS(on) Static Drain-Source On-Resistance = V, I D = A --.6 2.2 mω g FS Forward Transconductance = V, I D = A -- 6 -- S Dynamic Characteristics C iss Input Capacitance -- 39 -- pf C oss Output Capacitance = 2 V, = V, f =. MHz -- 93 -- pf C rss Reverse Transfer Capacitance -- 4 -- pf Switching Characteristics t d(on) Turn-On Delay Time --.8 -- ns t r Turn-On Rise Time = V, I D =A, --.2 -- ns t d(off) Turn-Off Delay Time = 2 V,R G =3. Ω -- 6.8 -- ns t f Turn-Off Fall Time -- 9.3 -- ns Q g Total Gate Charge -- 6.4 -- nc = 2 V, I D =A, Q gs Gate-Source Charge -- 2.4 -- nc = V Q gd Gate-Drain Charge --. -- nc Drain-Source Diode Characteristics and Maximum Ratings V SD Drain-Source Diode Forward Voltage = V, I S =A --.8.2 V t rr Reverse Recovery Time = V, I S =A, -- 47. -- ns Q rr Reverse Recovery Charge di F / dt = A/us (Note 3) -- 2. -- uc Notes:. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS =2.A,L=mH, =, Starting T J = 2 C 3. Pulse Test : Pulse width 3us, Duty cycle 2% 4. Essentially independent of operating temperature
I D Drain Current(A) Typical Characteristics 4 3 8 4.V.V 6 4 =3.V 2 I D Drain Current(A) 3 2 2 = T j =2 2 3 4 Drain-Source Voltage(V) Figure. On-Region Characteristics 2 3 4 Gate to Source Voltage(V) Figure 2. Transfer Characteristics Drain-So ource On-Resistance(mΩ Ω) 2..8.6.4.2. = I DR,Rev verse Drain Current(A) =V 2 4 6 8.3.6.9.2. I D Drain Current(A) V SD, Source-Drain Voltage(V) T j =2 Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature nce(pf) Capacita 6 4 3 2 C rss C iss C oss C iss =C gs +C gd (C ds =Shorted) C oss =C ds +C gd C rss =C gd. =V 2.F=MHZ e Voltage(V),Gate-Sourc 8 6 4 2. =2V 2. I D =A 2 2 3 3 4, Drain-Source Voltage(V) 2 3 4 6 7 Q G, Total Gate Charge(nC) Figure. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued) e R DS(ON),(mΩ) in-source on-resistance Dra 9 8 7 6 4 3 2 I D =A T j =2 e (ON),(Normalized) in-source on-resistance R DS( Dra.8.6.4.2.8 V. = 2. I D =A 2 3 4 6 7 8 9, Gate to Source Voltage(V) Figure 7. On-Resistance Variation with Gate to Source Voltage - -2 2 7 2 T J, Junction Temperature( ) Figure 8. On-Resistance Variation vs Temperature 3 6 4,Drain Current(A) I D, 2 - Operation in This Area Is limited by R DS(ON) Single Pulse T J =Max rated T C =2,Drain-Source Voltage(V) ms ms ms S S DC - 2 I D,Drain Current(A) 2 8 6 4 2 2 7 2 T C,Case Temperature( ) Figure 9. Maximum Safe Operating Area Figure. Maximum Drain Current vs Case Temperature
2V Current Regulator 2nF KΩ Gate Charge Test Circuit & Waveform 3nF Same Type as Q g VGS Q gs Q gd 3mA R R 2 Current Sampling (I G ) Resistor Current Sampling (I D ) Resistor Charge Resistive Switching Test Circuit & Waveforms R L V out V out 9% V in (. rated ) R G V in % t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L L E AS = BS ---- L L I AS -------------------- 2 BS -- Vary t p to obtain required peak I D I D BS I AS R G C I D (t) t p t p Time (t)
Peak Diode Recovery dv/dt Test Circuit & Waveforms + -- I S L Driver R G Same Type as dv/dt controlled by by 밨RG G I ISD S controlled by by Duty pulse Factor period 밆? (Driver) D = Gate Pulse Width -------------------------- Gate Pulse Period I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop