Super Low Gate Charge % EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -3V mω -6A Description TO22 Pin Configuration The is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The meet the RoHS and Green Product requirement, % EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -3 V VGS Gate-Source Voltage ±2 V ID@TC=25 Continuous Drain Current, VGS @ -V -6 A ID@TC= Continuous Drain Current, VGS @ -V -38 A ID@TA=25 Continuous Drain Current, VGS @ -V - A ID@TA=7 Continuous Drain Current, VGS @ -V -8 A IDM Pulsed Drain Current 2-5 A EAS Single Pulse Avalanche Energy 3 25 mj IAS Avalanche Current -5 A PD@TC=25 Total Power Dissipation 7 W TSTG Storage Temperature Range -55 to 5 TJ Operating Junction Temperature Range -55 to 5 Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient --- 62 /W RθJC Thermal Resistance Junction-Case ---.68 /W
Electrical Characteristics (T J=25, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=V, ID=-25uA -3 --- --- V BVDSS/ TJ BVDSS Temperature Coefficient Reference to 25, ID=-mA --- -.232 --- V/ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-V, ID=-3A --- --- VGS=-.5V, ID=-5A --- --- 22 m VGS(th) Gate Threshold Voltage -.2 --- -2.5 V VGS=VDS, ID =-25uA VGS(th) VGS(th) Temperature Coefficient ---.6 --- mv/ IDSS VDS=-2V, VGS=V, TJ=25 --- --- - Drain-Source Leakage Current ua VDS=-2V, VGS=V, TJ=55 --- --- -5 IGSS Gate-Source Leakage Current VGS=±2V, VDS=V --- --- ± na gfs Forward Transconductance VDS=-5V, ID=-3A --- 3 --- S Rg Gate Resistance VDS=V, VGS=V, f=mhz --- 9 --- Qg Total Gate Charge (-.5V) --- 22 --- Qgs Gate-Source Charge VDS=-5V, VGS=-.5V, ID=-5A --- 8.7 --- nc Qgd Gate-Drain Charge --- 7.2 --- Td(on) Turn-On Delay Time --- 8 --- Tr Rise Time VDD=-5V, VGS=-V, RG=3.3 --- 73.7 --- ns Td(off) Turn-Off Delay Time ID=-5A --- 6.8 --- Tf Fall Time --- 2. --- Ciss Input Capacitance --- 225 --- Coss Output Capacitance VDS=-5V, VGS=V, f=mhz --- 3 --- pf Crss Reverse Transfer Capacitance --- 237 --- Diode Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current,5 --- --- -6 A VG=VD=V, Force Current ISM Pulsed Source Current 2,5 --- --- -5 A VSD Diode Forward Voltage 2 VGS=V, IS=-A, TJ=25 --- --- - V trr Reverse Recovery Time IF=-5A, di/dt=a/µs, --- 9 --- ns Qrr Reverse Recovery Charge TJ=25 --- 9 --- nc Note :.The data tested by surface mounted on a inch 2 FR- board with 2OZ copper. 2.The data tested by pulsed, pulse width 3us, duty cycle 2% 3.The EAS data shows Max. rating. The test condition is V DD=-25V,V GS=-V,L=.mH,I AS=-5A.The power dissipation is limited by 5 junction temperature 5.The data is theoretically the same as I D and I DM, in real applications, should be limited by total power dissipation. 2
Typical Characteristics 5 -ID Drain Current (A) 25 75 5 25 V GS =-V V GS =-7V V GS =-5V V GS =-.5V V GS =-3V.5.5 2 2.5 3 3.5 -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage -IS Source Current(A) 2.5 8 T J =5 T J =25..25.5.75. -V SD, Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse -VGS Gate to Source Voltage (V) 8 6 2 2. V DS =-5V I D =-5A 9 8 27 36 5 Q G, Total Gate Charge (nc) Fig. Gate-charge Characteristics Normalized VGS(th).5 Normalized On Resistance.5. -5 5 5 T J,Junction Temperature ( ).5-5 5 5 T J, Junction Temperature ( ) Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J 3
F=.MHz Capacitance (pf) Ciss Coss Crss 5 9 3 7 2 25 -V DS, Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC). DUTY=.5.3..5.2. SINGLE PULSE T J peak = T C + P DM x R θjc...... t, Pulse Width (s) P DM T ON D = T ON /T Fig.9 Normalized Maximum Transient Thermal Impedance T Fig. Switching Time Waveform Fig. Unclamped Inductive Switching Waveform
Package Information ( TO-22-3L ) 5