6MBP50VDA IGBT MODULE (V series) 1200V / 50A / IPM. Features

Similar documents
7MBP75VDN IGBT MODULE (V series) 1200V / 75A / IPM. Features

6MBP20VAA IGBT MODULE (V series) 600V / 20A / IPM. Features

7MBP50VFN IGBT Module (V series) 1200V / 50A / IPM. IGBT Modules

7MBP50VFN IGBT Module (V series) 600V / 50A / IPM. IGBT Modules

6MBP100VFN IGBT Module (V series) 600V / 100A / IPM. IGBT Modules

6MBP75VFN IGBT Module (V series) 600V / 75A / IPM. IGBT Modules

C Storage temperature Tstg -40 ~ +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Continuous

C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque

Tc=100 C 300 Tc=25 C 360 Collector current

IGBT MODULE (V series) 1200V / 100A / IGBT, RB-IGBT 4 in one package

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V

Tc=25 C 1800 Tc=100 C 1400 Collector current

IGBT MODULE (V series) 1200V / 75A / IGBT, RB-IGBT 12 in one package

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V

Tc=25 C 1800 Tc=100 C 1400 Collector current

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms TC=100 C 7200

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms 2400

VCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W

IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package

TC=25 C, Tj=150 C Note *1

2MBI150HJ Power Module (V series) 1200V / 150A / 2-in-1 package G1 E1 C2E1. IGBT Modules

VCC 600V,VGE=12V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 340 W

Chapter 2. Technical Terms and Characteristics

Viso AC : 1min VAC

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 450

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100

Icp 1ms TC=80 C 100 -IC 50. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70. Inverter, Brake 175 Converter 150 Operating junciton temperature

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100

Ic Continuous Tc=80 C 35 Icp 1ms Tc=80 C 70 -Ic 35 -Ic pulse 1ms 70 Collector power dissipation Pc 1 device 210 W

Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50

Icp 1ms TC=80 C 60 -Ic 30. IC Continuous TC=80 C 30 ICP 1ms TC=80 C 60. Inverter, Brake 175 Converter 150 Operating junciton temperature

Icp 1ms TC=80 C 200 -IC 100. IC Continuous TC=80 C 50 ICP 1ms TC=80 C 100. Inverter, Brake 175 Converter 150 Operating junciton temperature

Icp 1ms TC=80 C 50 -IC 25. IC Continuous TC=80 C 25 ICP 1ms TC=80 C 50. Inverter, Brake 175 Converter 150 Operating junciton temperature

Icp 1ms TC=80 C 20 -Ic 10. IC Continuous TC=80 C 10 ICP 1ms TC=80 C 20

Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70

Continuous. Ic pulse 1ms 900. C Case temperature TC 125 Storage temperature Tstg -40 to N m Terminals (*4) - 4.5

Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 80 V Isolating voltage Viso Terminals-to-case, AC.

4MBI400VF-120R-50. IGBT Power Module (V series) 1200V/400A/IGBT, ±600V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. (Unit : mm)

4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15

4MBI900VB-120R1-50. IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15

4MBI650VB-120R1-50. IGBT Power Module (V series) 1200V/650A/IGBT, ±900V/650A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] 8.

6MBP75VDA IGBT MODULE (V series) 600V / 75A / IPM. Features

6MBP150RA060. IGBT-IPM R series. 600V / 150A 6 in one-package. Features. Maximum ratings and characteristics

7MBP150VDA IGBT MODULE (V series) 600V / 150A / IPM. Features

6MBP35VBA IGBT MODULE (V series) 1200V / 35A / IPM. Features

Fuji IGBT Module V Series 1700V Family Technical Notes

Symbol Rating Unit V V V V A A A W Vcc Vcc AC *9

TO-220F(SLS) Description Symbol Characteristics Unit Remarks

TO-3P(Q) Description Symbol Characteristics Unit Remarks. Ta=25 C W 315 Tc=25 C Operating and Storage Tch 150 C Temperature range Tstg -55 to C

TO-3P(Q) Description Symbol Characteristics Unit Remarks. Tch 150 C Tstg -55 to C

Fuji IGBT Module V Series 1200V Family Technical Notes

MBL1200E17F Silicon N-channel IGBT 1700V F version

Chapter 8. Parallel Connections

TO-3P. φ3.2± max 10 ± 0.2 3± ± ±0.2

FUJI IGBT Module EP2 Package Evaluation Board

Description of Terminal Symbols and Terminology

FUJI IGBT Module EP3 Package Evaluation Board

TO-247-P2. Description Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V. Description Symbol Conditions min. typ. max.

TO-247. Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

MBN1200F33F-C 3300V Silicon N-channel IGBT F version with SiC Diode

Sixth-Generation V-Series IGBT Module Application Note Chapter 1 Basic Concept and Features

TO-247. Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

Item Symbol Unit MBN1800FH33F Collector Emitter Voltage VCES V 3,300 Gate Emitter Voltage VGES V 20 Collector Current

MBN1500FH45F Silicon N-channel IGBT 4500V F version

TO-220F (SLS) Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

TO-3P(Q) φ3.2± max 10 ± 0.2 3± ± ±0.2

TO ± ± ± ± 0.2. Description Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

MBN3600E17F Silicon N-channel IGBT 1700V F version

MBN1000FH65G2 Silicon N-channel IGBT 6500V G2 version

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

Item Symbol Unit MBM1000FS17G Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current

MBB400TX12A Silicon N-channel IGBT

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

Item Symbol Unit MBL1600E17F Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30.

Tc=25 C 150 Tc=80 C 100 Collector current

Drain (D) easy to use (more controllable switching dv/dt by Rg) The reliability trial conforms to AEC Q % avalanche tested Gate (G)

MBN1800F33F Silicon N-channel IGBT 3300V F version

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current.

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C 35. 1ms IC -IC pulse.

MG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30.

GT50J325 GT50J325. High Power Switching Applications Fast Switching Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics

GT60M323 GT60M323. Voltage Resonance Inverter Switching Application Unit: mm. Maximum Ratings (Ta = 25 C) Thermal Characteristics. Equivalent Circuit

Tj=25 C VCE (sat) Tj=125 C (terminal) VGE = 15V. Tj=150 C Tj=25 C Tj=125 C (chip) Tj=150 C - 2.

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324

SiC Power Module. Datasheet BSM120D12P2C005. Application Motor drive. Circuit diagram. Inverter, Converter. Photovoltaics, wind power generation.

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321. DC I C 40 A 1ms I CP 80. DC I F 30 A 1ms I FP 80

Rating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max.

NGTB20N60L2TF1G. N-Channel IGBT 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device

Value Parameter Symbol Conditions

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 4.0 A

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321. DC I C 40 A 1ms I CP 80. DC I F 30 A 1ms I FP 80

Transcription:

IGBT MODULE (V series) V / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (TC=5ºC, VCC=5V unless otherwise specified) Items Symbol Min. Max. Units Collector-Emitter Voltage (*) VCES V Short Circuit Voltage VSC 8 V DC IC - A Collector Current ms Icp - A Duty=% (*) -IC - A Collector Power Dissipation device (*3) PC - W Collector Current DC IC - - A ms Icp - - A Forward Current of Diode IF - - A Collector Power Dissipation device (*3) PC - - W Supply Voltage of (*4) VCC -.5 V Input Signal Voltage (*5) Vin -.5 VCC+.5 V Alarm Signal Voltage (*) VALM -.5 VCC V Alarm Signal Current (*7) IALM - ma Junction Temperature Tj - ºC Operating Case Temperature Topr - ºC Storage Temperature Tstg - 5 ºC Solder Temperature (*8) Tsol - ºC Isolating Voltage (*9) Viso - AC Vrms Screw Torque Terminal (M4) Mounting (M4) - -.7 Nm Note *: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W, B)-N. Note *: Duty=5ºC/Rth(j-c)D /(IF VF Max.) Note *3: PC=5ºC/Rth(j-c)Q (Inverter & Brake) Note *4: VCC shall be applied to the input voltage between terminal No.4 and, 8 and 5, and 9, 4 and 3. Note *5: Vin shall be applied to the input voltage between terminal No.3 and, 7 and 5, and 9, 5~8 and 3. Note *: VALM shall be applied to the voltage between terminal No. and, and 5, and 9, 9 and 3. Note *7: IALM shall be applied to the input current to terminal No.,, and 9. Note *8: Immersion time ±sec. time. Note *9: Terminal to base, /Hz sine wave min. All terminals should be connected together during the test. Inverter Brake

Electrical Characteristics (Tj=5ºC, VCC=5V unless otherwise specified) Items Symbol Conditions Min. Typ. Max. Units Brake Inverter Collector Current at off signal input ICES VCE=V - -. ma Collector-Emitter saturation voltage VCE(sat) IC=A Terminal - -.5 V Chip -.7 - V Forward voltage of FWD VF IF=A Terminal - -.8 V Chip -. - V Collector Current at off signal input ICES - - - - ma Collector-Emitter saturation voltage VCE(sat) - - - - V - - - V Forward voltage of FWD VF - - - - V - - - V ton. - - µs VDC=V, Tj=5ºC, IC=A toff - -. µs Switching time trr VDC=V, IC=A - -.3 µs Supply current of P-side pre-driver (per one unit) Iccp Switching Frequency= -5kHz - - 4 ma Supply current of N-side pre-driver Iccn TC=-~ºC - - 47 ma Input signal threshold voltage Vinth(on) ON..4. V Vin-GND Vinth(off) OFF.5.7.9 V Over Current Protection Inverter 75 - - A IOC Tj=5ºC Level Brake - - - A Over Current Protection Delay time tdoc Tj=5ºC - 5 - µs Short Circuit Protection Delay time tsc Tj=5ºC - 3 µs IGBT Chips Over Heating Protection Temperature Level TjOH Surface of IGBT Chips - - ºC Over Heating Protection Hysteresis TjH - - ºC Under Voltage Protection Level VUV. -.5 V Under Voltage Protection Hysteresis VH..5 - V Alarm Signal Hold Time talm(oc)...4 ms ALM-GND talm(uv) VCC V.5 4. 4.9 ms TC=-~ºC talm(tjoh) 5. 8.. ms Resistance for current limit RALM 9 5 57 Ω Thermal Characteristics (TC = 5ºC) Items Symbol Min. Typ. Max. Units Junction to Case Thermal Resistance (*) Inverter IGBT Rth(j-c)Q - -. C/W FWD Rth(j-c)D - -.74 C/W Brake IGBT Rth(j-c)Q - - - C/W FWD Rth(j-c)D - - - C/W Case to Fin Thermal Resistance with Compound Rth(c-f) -.5 - C/W Note *: For device, the measurement point of the case is just under the chip. Noise Immunity (VDC=V, VCC=5V) Items Conditions Min. Typ. Max. Units Common mode rectangular noise Pulse width μs, polarity ±, min. Judge : no over-current, no miss operating ±. - - kv Recommended Operating Conditions Items Symbol Min. Typ. Max. Units DC Bus Voltage VDC - - 8 V Power Supply Voltage of VCC 3.5 5..5 V Switching frequency of IPM fsw - - khz Arm shoot through blocking time for IPM's input signal tdead. - - µs Screw Torque (M4) -.3 -.7 Nm

Block Diagram VccU 4 VinU 3 ALMU GNDU VccV 8 VinV 7 ALM V GNDV 5 VccW VinW ALM W GNDW 9 Vcc 4 VinX R ALM R ALM R ALM P U V W GND 3 VinY 7 VinZ 8 5 ALM 9 R ALM N Pre-drivers include following functions. Amplifier for driver. Short circuit protection 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection 3

Characteristics (Representative) Power supply current vs. Switching frequency Tj= 5 (typ.) Input signal threshold voltage vs. Power supply voltage (typ.) N-side P-side 3.5 TC=5~5 Power supply current : ICC [ ma ] VCC=7V VCC=5V VCC=3V VCC=7V VCC=5V VCC=3V Input signal threshold voltage : Vinth(on),Vinth(off) [ V ].5.5 Vinth(off) Vinth(on) 5 5 5 Switchig frequency : fsw [ khz ] 3 4 5 7 8 Power supply voltage : VCC [ V ] 5 Under voltage vs. Junction temperature (typ.) Under voltage hysterisis vs. Junction temperature (typ.).8 Under voltage : VUV [ V ] 9 3 Under voltage hysterisis : VH [ V ]..4. 8 Junction temperature : Tj [ ] 8 Junction temperature : Tj [ ] Alarm hold time vs. Power supply voltage (typ.) Over heating characteristics TjOH,TjH vs. VCC (typ.) TjOH Alarm hold time : talm [ msec ] 8 4 t ALM(TjOH) t ALM(OC) Over heating protection : TjOH [ ] OH hysterisis : TjH [ ] TjH 3 4 5 7 8 Power supply voltage : VCC [ V ] 3 4 5 7 8 Power supply voltage : VCC [ V ] 4

Inverter Collector current vs. Collector-Emitter voltage Tj=5 [Chip] (typ.) Collector current vs. Collector-Emitter voltage Tj=5 [Terminal] (typ.) 8 VCC=5V 8 VCC=5V 7 7 VCC=7V VCC=3V VCC=7V VCC=3V.5.5.5 3 3.5.5.5.5 3 3.5 8 Collector current vs. Collector-Emitter voltage Tj=5 [Chip] (typ.) VCC=5V 8 Collector current vs. Collector-Emitter voltage Tj=5 [Terminal] (typ.) VCC=5V 7 7 VCC=7V VCC=3V VCC=7V VCC=3V.5.5.5 3 3.5.5.5.5 3 3.5 8 Forward current vs. Forward voltage [Chip] (typ.) 8 Forward current vs. Forward voltage [Terminal] (typ.) 7 Tj=5 7 Tj=5 Tj=5 Tj=5 Forward current : IF [ A ] Forward current : IF [ A ].5.5.5 3 3.5.5.5.5 3 3.5 Forward voltage : VF [ V ] Forward voltage : VF [ V ] 5

Switching Loss vs. Collector Current (typ.) VDC=V,VCC=5V,Tj=5 Switching Loss vs. Collector Current (typ.) VDC=V,VCC=5V,Tj=5 Eon Eon 8 8 Switching loss :Eon,Eoff,Err [mj/cycle] 4 Eoff Err Switching loss :Eon,Eoff,Err [mj/cycle] 4 Eoff Err 7 8 7 8 Reversed biased safe operating area Vcc=5V,Tj 5 [Main Terminal] (min.) Transient thermal resistance (max.) RBSOA (Repetitive pulse) Thermal resistance : Rth(j-c) [ /W ]. FWD IGBT 9.... Pulse width : PW [ sec ] Power derating for IGBT (max.) [per device] Power derating for FWD (max.) [per device] Collector Power Dissipation : PC [ W ] Collector Power Dissipation : PC [ W ] Case Temperature : TC [ ] Case Temperature : TC [ ]

Switching time vs. Collector current (typ.) VDC=V,VCC=5V,Tj=5 Switching time vs. Collector current (typ.) VDC=V,VCC=5V,Tj=5 t on t on Switching time : ton,toff,tf [ nsec ] t off t f Switching time : ton,toff,tf [ nsec ] t off t f 7 8 7 8 Reverse recovery characteristics (typ.) trr,irr vs. If Over current protection vs. Junction temperature (typ.) VCC=5V t rr Tj=5 Reverse recovery current :Irr [ A ] Reverse recovery time : trr [ nsec ] t rr Tj=5 Irr Tj=5 Irr Tj=5 Over current protection level : IOC [ A ] 7 8 Forward current : IF [ A ] Outline Drawings, mm 8 Junction temperature : Tj [ ] 7

WARNING. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications.. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright 99- by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 8