UTOMOTIVE RE dvanced Process Technology Optimized for Class udio mplifier pplications Low Rds(on) for Improved Efficiency Low Qg for Better TH and Improved Efficiency Low Qrr for Better TH and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI elivers up to 250W per Channel into 4 with No Heat sink ual Sided Cooling 75 C Operating Temperature Repetitive valanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free utomotive Qualified * V (BR)SS 50V R S(on) typ. 47m max. 56m R g (typical).2 2nC Q g (typical) utomotive irectfet Power MOSFET S S pplicable irectfet Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 M2 irectfet ISOMETRIC escription The /TR combines the latest utomotive HEXFET Power MOSFET Silicon technology with the advanced irectfet packaging platform to produce a best in class part for utomotive Class audio amplifier applications. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class audio amplifier performance factors such as efficiency, TH and EMI. Moreover the irectfet packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in utomotive Class audio amplifier systems. Base Part Number Package Type Standard Pack Form Quantity Orderable Part Number UIRF7675M2 irectfet Medium Can Tape and Reel 4800 bsolute Maximum Ratings Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T) is 25 C, unless otherwise specified. Parameter Max. Units V S rain-to-source Voltage 50 V S ate-to-source Voltage ±20 V I @ T C = 25 C Continuous rain Current, V S @ V (Silicon Limited) 8 I @ T C = C Continuous rain Current, V S @ V (Silicon Limited) 3 I @ T = 25 C Continuous rain Current, V S @ V (Silicon Limited) 4.4 I @ T C = 25 C Continuous rain Current, V S @ V (Package Limited) 90 I M Pulsed rain Current 72 P @T C = 25 C Power issipation 45 P @T = 25 C Power issipation 2.7 W E S Single Pulse valanche Energy (Thermally Limited) 59 E S (Tested) Single Pulse valanche Energy 70 mj I R valanche Current See Fig. 6, 7, 8a, 8b E R Repetitive valanche Energy mj T P Peak Soldering Temperature 270 T J Operating Junction and -55 to + 75 C T ST Storage Temperature Range HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 205-2-4
Thermal Resistance Symbol Parameter Typ. Max. Units R J Junction-to-mbient 60 R J Junction-to-mbient 2.5 R J Junction-to-mbient 20 C/W R J-Can Junction-to-Can 3.3 R J-PCB Junction-to-PCB Mounted.4 Linear erating Factor 0.3 W/ C Static Electrical Characteristics @ T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 50 V V S = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.6 V/ C Reference to 25 C, I =.0m R S(on) Static rain-to-source On-Resistance 47 56 m V S = V, I = V S(th) ate Threshold Voltage 3.0 4.0 5.0 V V S = V S, I = µ V S(th) / T J ate Threshold Voltage Coefficient - mv/ C gfs Forward Transconductance 6 S V S = 50V, I = R Internal ate Resistance.2 5.0 20 V S = 50V, V S = 0V I SS rain-to-source Leakage Current µ 250 V S = 50V, V S = 0V, T J = 25 C I SS ate-to-source Forward Leakage V S = 20V n ate-to-source Reverse Leakage - V S = -20V ynamic Electrical Characteristics @ T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions Q g Total ate Charge 2 32 V S = 75V Q gs ate-to-source Charge 5.2 V S = V Q gs2 ate-to-source Charge.6 I = nc Q gd ate-to-rain ("Miller") Charge 7. See Fig. 6 and 7 Q godr ate Charge Overdrive 7. Q sw Switch Charge (Q gs2 + Q gd ) 8.7 Q oss Output Charge 8.8 nc V S = 6V, V S = 0V t d(on) Turn-On elay Time V = 75V, V S = V t r Rise Time 3 I = ns t d(off) Turn-Off elay Time 4 R = 6.8 t f Fall Time 7.5 C iss Input Capacitance 360 V S = 0V C oss Output Capacitance 90 V S = 25V C rss Reverse Transfer Capacitance 4 pf ƒ =.0 MHz C oss Output Capacitance 2 V S = 0V, V S =.0V, ƒ =.0 MHz C oss Output Capacitance 92 V S = 0V, V S =20V, ƒ =.0MHz Notes through are on page 3 2 205-2-4
iode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 8 (Body iode) showing the Pulsed Source Current integral reverse I SM 72 S (Body iode) p-n junction diode. V S iode Forward Voltage.3 V T J = 25 C, I S =, V S = 0V t rr Reverse Recovery Time 63 95 ns T J = 25 C, I F =, V = 25V Q rr Reverse Recovery Charge 80 270 nc dv/dt = /µs Surface mounted on in. square Cu board (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). Click on this section to link to the appropriate technical paper. Click on this section to link to the irectfet Website. Surface mounted on in. square Cu board, steady state. T C measured with thermocouple mounted to top (rain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.33mH, R = 50, I S =. Pulse width 400µs; duty cycle 2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heat sink. R is measured at T J of approximately 90 C. 3 205-2-4
I, rain-to-source Current () R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current () I, rain-to-source Current () VS TOP 5V V 8.0V 7.0V 6.5V 6.0V 5.5V BOTTOM 5.0V VS TOP 5V V 8.0V 7.0V 6.5V 6.0V 5.5V BOTTOM 5.0V 5.0V 5.0V 60µs PULSE WITH Tj = 25 C 0. 0. V S, rain-to-source Voltage (V) 60µs PULSE WITH Tj = 75 C 0. 0. V S, rain-to-source Voltage (V) R S(on), rain-to -Source On Resistance (m ) Fig. Typical Output Characteristics Fig. 2 Typical Output Characteristics 40 I = 20 R S (on), rain-to -Source On Resistance ( m ) 200 Vgs = V 60 T J = 25 C T J = 25 C 20 80 60 T J = 25 C 80 T J = 25 C 40 6 8 2 4 6 8 20 40 0 20 30 40 50 60 V S, ate -to -Source Voltage (V) I, rain Current () Fig. 3 Typical On-Resistance vs. ate Voltage Fig. 4 Typical On-Resistance vs. rain Current 3.0 I = 2.5 V S = V 0. 0.0 T J = -40 C TJ = 25 C TJ = 75 C V S = 50V 60µs PULSE WITH 3 4 5 6 7 8 9 V S, ate-to-source Voltage (V) 2.0.5.0 0.5-60 -40-20 0 20 40 60 80 20406080 T J, Junction Temperature ( C) Fig 5. Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature 4 205-2-4
V S, ate-to-source Voltage (V) I, rain Current () fs, Forward Transconductance (S) C, Capacitance (pf) V S(th), ate threshold Voltage (V) I S, Reverse rain Current () 5.5 T J = -40 C 4.5 TJ = 25 C TJ = 75 C 3.5 2.5 I = µ I = 250µ I =.0m I =.0.5-75 -50-25 0 25 50 75 25 50 75 T J, Temperature ( C ) V S = 0V 0. 0.2 0.4 0.6 0.8.0 V S, Source-to-rain Voltage (V) Fig. 7 Typical Threshold Voltage vs. Junction Temperature 50 T J = 25 C 40 Fig 8. Typical Source-rain iode Forward Voltage 000 V S = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C 00 oss = C ds + C gd 30 T J = 75 C 0 C iss 20 C oss V S = V C rss 0 380µs PULSE WITH 0 4 8 2 6 20 24 I,rain-to-Source Current () V S, rain-to-source Voltage (V) Fig 9. Typical Forward Trans conductance vs. rain Current Fig. Typical Capacitance vs. rain-to-source Voltage 4 2 I = V S = 20V V S = 75V V S = 30V 20 6 8 2 6 8 4 2 4 0 0 4 8 2 6 20 24 28 Q, Total ate Charge (nc) Fig. Typical ate Charge vs. ate-to-source Voltage 0 25 50 75 25 50 75 T C, Case Temperature ( C) Fig 2. Maximum rain Current vs. Case Temperature 5 205-2-4
I, rain-to-source Current () E S, Single Pulse valanche Energy (mj) 0 OPERTION IN THIS RE LIMITE BY R S (on) 250 200 I TOP 2.2 4.5 BOTTOM µsec 50 msec Tc = 25 C Tj = 75 C msec Single Pulse C 0. 0. 0 V S, rain-tosource Voltage (V) 50 0 25 50 75 25 50 75 Starting T J, Junction Temperature ( C) Fig 3. Maximum Safe Operating rea Fig 4. Maximum valanche Energy vs. Temperature Thermal Response ( Z thjc ) C/W 0. = 0.50 0.20 0. 0.05 0.02 0.0 R R 2 R 3 R R 2 R 3 J J 2 2 3 3 Ci= i Ri Ci= i Ri 0.0 SINLE PULSE 0.50388 0.00074 ( THERML RESPONSE ) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthjc + Tc 0.00 E-006 E-005 0.000 0.00 0.0 0. t, Rectangular Pulse uration (sec) R 4 Ri ( C/W) i (sec).3863 0.007407 4 4 R 4 C C.32033 0.03992 0.4573 2.E-05 Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Case uty Cycle = Single Pulse llowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 50 C and Tstart =25 C (Single Pulse) 0.0 valanche Current () 0.05 0. 0. llowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 50 C. 0.0.0E-06.0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 6. Typical valanche Current vs. Pulse Width 6 205-2-4
E R, valanche Energy (mj) 60 50 40 30 20 TOP Single Pulse BOTTOM % uty Cycle I = 0 25 50 75 25 50 75 Starting T J, Junction Temperature ( C) Fig 7. Maximum valanche Energy vs. Temperature Notes on Repetitive valanche Curves, Figures 6, 7: (For further info, see N-5 at www.infineon.com). valanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in valanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 8a, 8b. 4. P (ave) = verage power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. Iav = llowable avalanche current. 7. T = llowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 6, 7). tav = verage time in avalanche. = uty cycle in avalanche = tav f ZthJC(, tav) = Transient thermal resistance, see Figures 5) P (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E S (R) = P (ave) t av Fig 8a. Unclamped Inductive Test Circuit Fig 8b. Unclamped Inductive Waveforms V Fig 9a. ate Charge Test Circuit Fig 9b. ate Charge Waveform Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms 7 205-2-4
irectfet Board Footprint, M2 (Medium Size Can). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. = TE = RIN S = SOURCE S S Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 205-2-4
irectfet Outline imension, M2 Outline (Medium Size Can). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE B C E F H 6.25 MX 6.35 0.246 MX 0.250 4.80 5.05 0.89 0.99 3.85 0.35 0.58 3.95 0.45 0.62 0.52 0.04 0.023 0.56 0.08 0.024 0.78 0.82 0.03 0.032 0.78 0.82 0.03 0.032 0.78 0.82 0.03 0.032 I N/ N/ N/ N/ 0.38 0.42 0.05 0.07 J K L M P IMENSIONS METRIC IMPERIL. 2.30 0.68 0.09.20 2.40 0.74 0.7 0.043 0.090 0.027 0.003 0.047 0.094 0.029 0.007 R 0.02 0.08 0.00 0.003 irectfet Part Marking "U" = TE N UTOMOTIVE MRKIN LOO PRT NUMBER BTCH NUMBER TE COE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 205-2-4
irectfet Tape & Reel i- F E C B H NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts, order as. COE B C E F H REEL IMENSIONS STNR OPTION (QTY 4800) METRIC 330.0 20.2 2.8.5.0 2.4.9 MX 3.2 8.4 4.4 5.4 2.992 0.795 0.504 0.059 3.937 0.488 0.469 IMPERIL MX 0.520 0.724 0.567 0.606 Loaded Tape Feed irection U NOTE: CONTROLLIN IMENSIONS IN MM COE B C E F H 7.90 3.90.90 5.45 5. 6.50.50.50 IMENSIONS METRIC MX 8. 4. 2.30 5.55 5.30 6.70.60 0.3 0.54 0.469 0.25 0.20 0.256 0.059 0.059 IMPERIL MX 0.39 0.6 0.484 0.29 0.209 0.264 0.063 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 205-2-4
Qualification Information utomotive (per EC-Q) Qualification Level Comments: This part number(s) passed utomotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level FET2 Medium Can MSL, 260 C Machine Model Class M4 (+/- 400V) EC-Q-002 ES Human Body Model Class HB (+/- 0V) EC-Q-00 Charged evice Model Class C4 (+/- 0V) EC-Q-005 RoHS Compliant Yes Highest passing voltage. Revision History ate Updated datasheet with corporate template 2/4/205 Corrected ordering table on page. Updated Tape and Reel option on page Comments Published by Infineon Technologies 8726 München, ermany Infineon Technologies 205 ll Rights Reserved. IMPORTNT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WRNINS ue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 205-2-4