Diode RapidSwichingEmierConrolledDiode EmierConrolledDiode Daashee IndusrialPowerConrol
EmierConrolledDiode RapidSwichingEmierConrolledDiode Feaures: QualifiedaccordingoJEDECforargeapplicaions 6VEmierConrolledechnology Fasrecovery Sofswiching Lowreverserecoverycharge Lowforwardvolageandsableoveremperaure 175 Cjuncionoperaingemperaure Easyparalleling Pbfreeleadplaing;RoHScomplian Applicaions: A C BoosdiodeinCCMPFC C A KeyPerformanceandPackageParameers Type Vrrm If Vf,Tvj= C Tvjmax Marking Package 6V 3A 1.6V 175 C E3ED2 PGTO22222 FP 2 Rev.2.1,214918
EmierConrolledDiode TableofConens Descripion........................................................................ 2 Table of Conens................................................................... 3 Maximum Raings................................................................... 4 Thermal Resisance................................................................. 4 Elecrical Characerisics.............................................................. 4 Elecrical Characerisics Diagrams..................................................... 6 Package Drawing................................................................... 9 Tesing Condiions................................................................. Revision Hisory................................................................... 11 Disclaimer........................................................................ 11 3 Rev.2.1,214918
EmierConrolledDiode MaximumRaings Foropimumlifeimeandreliabiliy,Infineonrecommendsoperaingcondiionshadonoexceed8%ofhemaximumraingssaedinhisdaashee. Parameer Symbol Value Uni Repeiivepeakreversevolage,Tvj C VRRM 6 V Diodeforwardcurren,limiedbyTvjmax TC= C TC= C IF 3. 17.5 Diodepulsedcurren,plimiedbyTvjmax IFpuls 9. A Diode surge non repeiive forward curren TC= C,p=8.3ms,sinehalfwave IFSM 18. PowerdissipaionTC= C Po 47. W Operaing juncion emperaure Tvj 4...+175 C Sorage emperaure Tsg 55...+1 C Soldering emperaure, wave soldering 1.6 mm (.63 in.) from case for s 26 Mouning orque, M3 screw Maximum of mouning processes: 3 A A C M.6 Nm ThermalResisance Parameer Symbol Condiions Max.Value Uni Characerisic Diode hermal resisance, 1) juncion case Thermal resisance juncion ambien Rh(jc) 3.2 K/W Rh(ja) 65 K/W ElecricalCharacerisic,aTvj= C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni SaicCharacerisic Diode forward volage Reverse leakage curren VF IR IF=3.A Tvj= C Tvj=175 C VR=6V Tvj= C Tvj=175 C 1.6 1.65 4. 8. 2.2 4. V µa ElecricalCharacerisic,aTvj= C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni DynamicCharacerisic Inernal emier inducance measured 5mm (.197 in.) from case LE 7. nh 1) Please be aware ha in non sandard load condiions, due o high Rh(jc), Tvj close o Tvjmax can be reached. 4 Rev.2.1,214918
EmierConrolledDiode SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj= C Diode reverse recovery ime rr Tvj= C, 42 ns Diode reverse recovery charge VR=4V, Qrr.34 µc IF=3.A, Diode peak reverse recovery curren Irrm dif/d=a/µs, 14.7 A Diode peak rae of fall of reverse Lσ=3nH, dirr/d Cσ=4pF, 2 A/µs recoverycurrenduringb swich IKWN65H5 Diode reverse recovery ime rr Tvj= C, 7 ns Diode reverse recovery charge VR=4V, Qrr. µc IF=3.A, Diode peak reverse recovery curren Irrm dif/d=3a/µs, 5.7 A Diode peak rae of fall of reverse Lσ=3nH, dirr/d Cσ=4pF, 7 A/µs recoverycurrenduringb swich IKWN65H5 SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=175 C/1 C Diode reverse recovery ime rr Tvj=175 C, 56 ns Diode reverse recovery charge VR=4V, Qrr.61 µc IF=3.A, Diode peak reverse recovery curren Irrm dif/d=a/µs, 18. A Diode peak rae of fall of reverse Lσ=3nH, dirr/d Cσ=4pF, 22 A/µs recoverycurrenduringb swich IKWN65H5 Diode reverse recovery ime rr Tvj=1 C, 73 ns Diode reverse recovery charge VR=4V, Qrr.38 µc IF=3.A, Diode peak reverse recovery curren Irrm dif/d=3a/µs, 7.1 A Diode peak rae of fall of reverse Lσ=3nH, dirr/d Cσ=4pF, 9 A/µs recoverycurrenduringb swich IKWN65H5 5 Rev.2.1,214918
Emier Conrolled Diode 3 45 IF, FORWARD CURRENT [A] Po, POWER DISSIPATION [W] 4 35 3 2 15 2 15 5 5 75 1 1 175 TC, CASE TEMPERATURE [ C] 75 1 1 175 TC, CASE TEMPERATURE [ C] Figure 1. Power dissipaion as a funcion of case emperaure (Tvj 175 C) Figure 2. Diode forward curren as a funcion of case emperaure (Tvj 175 C) Tj= C, IF = 3A Tj=175 C, IF = 3A 8 rr, REVERSE RECOVERY TIME [ns] Zh(jc), TRANSIENT THERMAL RESISTANCE [K/W] 9 1 D=.5.2.1.5.2.1.1 single pulse 1E5 1E4.1.1.1 1 6 4 3 2 i: 1 2 3 4 5 6 7 ri[k/w]:.7619.2291.343335.39198.93921 1.7751.1387158 τi[s]: 5.2E5 2.8E4 3.E3.248532.3577623 2.43114 28.15315.1 1E6 7 p, PULSE WIDTH [s] 2 2 3 dif/d, DIODE CURRENT SLOPE [A/µs] Figure 3. Diode ransien hermal impedance as a funcion of pulse widh (D=p/T) Figure 4. Typical reverse recovery ime as a funcion of diode curren slope (VR=4V) 6 Rev. 2.1, 214918
Emier Conrolled Diode.8 3 Tj= C, IF = 3A Tj=175 C, IF = 3A Tj= C, IF = 3A Tj=175 C, IF = 3A Irrm, REVERSE RECOVERY CURRENT [A] Qrr, REVERSE RECOVERY CHARGE [µc].7.6.5.4.3.2 2 15 5.1. 2 2 3 dif/d, DIODE CURRENT SLOPE [A/µs] 2 2 3 dif/d, DIODE CURRENT SLOPE [A/µs] Figure 5. Typical reverse recovery charge as a funcion Figure 6. Typical peak reverse recovery curren as a of diode curren slope funcion of diode curren slope (VR=4V) (VR=4V) 6 Tj= C, IF = 3A Tj=175 C, IF = 3A Tj= C Tj=175 C IF, FORWARD CURRENT [A] dirr/d, diode peak rae of fall of Irr [A/µs] 2 2 3 2 3 3 4 2 2 3 dif/d, DIODE CURRENT SLOPE [A/µs]..5 1. 1.5 2. 2.5 VF, FORWARD VOLTAGE [V] Figure 7. Typical diode peak rae of fall of reverse recovery curren as a funcion of diode curren slope (VR=4V) Figure 8. Typical diode forward curren as a funcion of forward volage 7 Rev. 2.1, 214918
Emier Conrolled Diode 2. IF=15A IF=3A IF=6A VF, FORWARD VOLTAGE [V] 2. 2. 1.75 1. 1. 1..75. 75 1 1 175 Tvj, JUNCTION TEMPERATURE [ C] Figure 9. Typical diode forward volage as a funcion of juncion emperaure 8 Rev. 2.1, 214918
Emier Conrolled Diode 9 Rev. 2.1, 214918
Emier Conrolled Diode vge() 9% VGE a a % VGE b b ic() 9% IC 9% IC % IC % IC vce() d(off) f d(on) r vge() 9% VGE % VGE ic() CC 2% IC vce() 2 E = off V CE 4 x IC x d E 1 1 on = V CE x IC x d 2% VCE 3 2 3 4 Rev. 2.1, 214918
Emier Conrolled Diode Revision Hisory Revision: 214918, Rev. 2.1 Previous Revision Revision Dae Subjecs (major changes since las revision) 2.1 214918 Final daa shee We Lisen o Your Commens Any informaion wihin his documen ha you feel is wrong, unclear or missing a all? Your feedback will help us o coninuously improve he qualiy of his documen. Please send your proposal (including a reference o his documen) o: erraum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany 214 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of noninfringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office (www.infineon.com). Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. The Infineon Technologies componen described in his Daa Shee may be used in lifesuppor devices or sysems and/or auomoive, aviaion and aerospace applicaions or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor, auomoive, aviaion and aerospace device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 11 Rev. 2.1, 214918