SLD5N50S2 / SLU5N50S2 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 5A, 500V, R DS(on) typ. = 1.35Ω@ = 10 V - Low gate charge ( typical 10 nc) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability LEAD FREE Pb RoHS D G S D-PAK G D S I-PAK Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter SLD5N50S2 SLU5N50S2 Units S Drain-Source Voltage 500 V Drain Current - Continuous (T C = 25 ) 5.0 A - Continuous (T C = 100 ) 3.2 A M Drain Current - Pulsed (Note 1) 16 A S Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 150 mj I AR Avalanche Current (Note 1) 5.0 A E AR Repetitive Avalanche Energy (Note 1) 6.0 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T C = 25 ) 60 W P D - Derate above 25 0.45 W/ T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature t for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. 300 Thermal Characteristics Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction-to-Caseto -- 22 2.2 /W R θjs Thermal Resistance, Case-to-Sink Typ. -- 50 /W R θja Thermal Resistance, Junction-to-Ambient -- 100 /W
Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics ti BS Drain-Source Breakdown Voltage = 0 V, = 250 ua 500 -- -- V BS / T J Breakdown Voltage Temperature Coefficient SS Zero Gate Voltage Drain Current = 250 ua, Referenced to 25 -- 0.5 -- V/ = 500 V, = 0 V -- -- 1 ua = 400 V, T C = 125 -- -- 10 ua I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, = 250 ua 2.0 -- 4.0 V R DS(on) Static Drain-Source On-Resistance = 10 V, = 2.5 A -- 1.35 1.60 Ω g FS Forward Transconductance = 40 V, = 2.5 A (Note 4) -- 3.5 -- S Dynamic Characteristics C iss Input Capacitance -- 350 -- pf C oss Output Capacitance = 25 V, = 0 V, f = 1.0 MHz -- 55 -- pf C rss Reverse Transfer Capacitance -- 5 -- pf Switching Characteristics t d(on) Turn-On Delay Time -- 15 -- ns t = 250 V, r Turn-On Rise Time = 5A, -- 20 -- ns R G = 25 Ω t d(off) Turn-Off Delay Time -- 30 -- ns (Note 4, 5) t f Turn-Off Fall Time -- 20 -- ns Q g Total Gate Charge = 400 V, = 5A, -- 10 -- nc Q gs Gate-Source Charge = 10 V -- 2.5 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 4.5 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 5 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 16 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 5A -- -- 1.4 V t rr Reverse Recovery Time = 0 V, I S = 5A, -- 250 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/us (Note 4) -- 1.5 -- uc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS =5A, = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 5A, di/dt 200A/us, BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300us, Duty cycle 2% 5. Essentially independent of operating temperature
Typical Characteristics Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V, Drain-Source Voltage [V] : Notes ط 1. 250 ى s Pulse Test ة 25 = C 2. T Figure 1. On-Region Characteristics 25 o C 150 o C -55 o C 1. = 40V 2. 250us Pulse Test 2 4 6 8 10, Gate-Source Voltage [V] Figure 2. Transfer Characteristics 40 4.0 R DS(ON) [ ] rain-source On-Resistance Dr 3.5 3.0 2.5 2.0 15 1.5 = = 20V * Note : T J = 25 o C 1.0 0 2 4 6 8 10 R, Reverse Drain Current [A] 150 o C 25 o C 1. = 0V 2. 250us Pulse Test 0.0 0.5 1.0 1.5 2.0 V SD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 600 C iss = C gs + C gd (C ds = shorted) 12 Capac citance [pf] 500 400 300 200 100 C rss C iss C oss C oss = C ds + C gd C rss = C gd 0, Drain-Source Voltage [V]? Notes ; 1. = 0 V 2. f = 1 MHz, Gate-So ource Voltage [V] 10 8 6 4 2 = 400V * Note : = 4A 0 0 2 4 6 8 2 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued) BS, (Normalized) ain-source Breakdown Voltage Dra 12 1.2 1.1 1.0 0.9 1. = 0 V 2. = 250 ua 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. = 2 A 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs Temperature 10 2 Operation in This Area is Limited by R DS(on) 6 Drain Current [A], 1. T C = 25 o C DC 10 ms 1 ms 100 us 4 2 2. T J = 150 o C 3. Single Pulse 10-2 10 2, Drain-Source Voltage [V] 0 25 50 75 100 125 150 T C [ة [, Case Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature l Response Z? JC (t), Thermal D=0.5 0.2 0.1 0.05 0.02 0.01 Single pulse 1. Z? JC (t) = 2.2 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z? JC (t) PDM t1 t2 10-2 10-5 10-4 10-3 10-2 t, Square Wave Pulse Duration [sec] 1 Figure 11. Transient Thermal Response Curve
12V 3mA Current Regulator 200nF 50KΩ VGS Gate Charge Test Circuit & Waveform 300nF Current Sampling (I G ) Resistor Same Type as R 1 R 2 Current Sampling ( ) Resistor Q gs Q g Q gd Charge Resistive Switching Test Circuit & Waveforms R L V out V out 90% V in ( 0.5 rated ) R G V in 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L L BS 1 E AS = ---- L L I 2 AS -------------------- 2 BS -- Vary t p to obtain required peak BS I AS R G C (t) t p t p Time (t)
Peak Diode Recovery dv/dt Test Circuit & Waveforms R G I S Driver + -- Same Type as L dv/dt controlled by by 밨RG G I ISD S controlled by by Duty pulse Factor period 밆? (Driver) D = Gate Pulse Width -------------------------- Gate Pulse Period I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop