MBIVN-- IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT) Applications Inverter for Motor Drive Uninterruptible Power Supply Power conditioner Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc= C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES V Gate-Emitter voltage VGES ± V Collector current IGBT IC Continuous TC=8 C Icp ms TC=8 C FWD -IC -IC pulse ms A Collector power dissipation PC device 3 W Collector-Emitter voltage VCES V Repetitive peak reverse voltage VRRM V Gate-Emitter voltage VGES ± V Collector current IC Continuous TC=8 C Icp ms TC=8 C A Collector power dissipation PC device 3 W Junction temperature Tj Case temperature TC C Storage temperature Tstg - ~ + between terminal and copper base (*) Isolation voltage between thermistor and others (*) Viso AC : min. VAC Mounting (*3) - M 3. N m Note *: All terminals should be connected together during the test. Note *: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value :.-3. Nm (M) T, T T3, T 89 NOVEMBER 3
MBIVN-- Electrical characteristics (at Tj= C unless otherwise specified) Items Symbols Conditions T, T Characteristics min. typ. max. Zero gate voltage collector current ICES VGE = V, VCE = V - -. ma Gate-Emitter leakage current IGES VCE = V, VGE = ±V - - na Gate-Emitter threshold voltage VGE (th) VCE = V, IC = ma.. 7. V VCE (sat) (chip) VGE = V IC = A Tj= C -.8.3 Collector-Emitter saturation voltage Tj= C -. - VCE (sat) VGE = V Tj= C -..8 V (P-U, V, W / U, V, W-N terminal) IC = A Tj= C -. - Internal gate resistance Rg(int) - -. - Ω Input capacitance Cies VCE = V, VGE =V, f = MHz -. - nf ton -.38. SW mode : A Turn-on time tr VCC = 3V -.. tr (i) IC = A -. - µs Turn-off time toff VGE = ±V -.38. RG =.Ω tf -..3 Forward on voltage Tj= C -.7. VF (chip) IF = A Tj= C -.8 - VF Tj= C -..7 (P-U, V, W / U, V, W-N IF = A terminal) Tj= C -. - V Reverse recovery time trr SW mode : B VCC = 3V IF = A VGE = ±V RG =.7Ω Units - -.3 µs T3, T Zero gate voltage collector current ICES VGE = V, VCE = V - -. ma Gate-Emitter leakage current IGES VCE = V, VGE = ±V - - na Gate-Emitter threshold voltage VGE (th) VCE = V, IC = ma.. 7. V VCE (sat) VGE = V Tj= C -..8 Collector-Emitter saturation voltage (chip) IC = A Tj= C -. - VCE (sat) VGE = V Tj= C - 3. 3.3 V (M-U, V, W terminal) IC = A Tj= C - 3. - Internal gate resistance Rg(int) - -. - Ω Input capacitance Cies VCE = V, VGE = V, f = MHz -. - nf ton -.8. SW mode : B Turn-on time tr VCC = 3V -.3. tr (i) IC = A -. - µs Turn-off time toff VGE = ±V -.. RG =.7Ω tf -.3.3 Reverse recovery time trr SW mode : A VCC = 3V IC = A VGE = ±V RG =.Ω - -.3 µs Thermistor T= C - - Resistance R Ω T= C 9 B value B T= / C 33 33 3 K Thermal resistance characteristics Items Symbols Conditions Characteristics min. typ. max. Units T, T IGBT - -.39 Thermal resistance (device) Contact thermal resistance (device) (*) Rth(j-c) Rth(c-f) T, T FWD - -. T3, T RB-IGBT - -. C/W T, T T3, T with Thermal Compound -. - Note *: This is the value which is defined mounting on the additional cooling fin with thermal compound (thermal conductivity = W/m k).
MBIVN-- Definitions of switching time Definitions of switching mode P Vcc T G T3 G T3 E T3 T T,T E Vcc M U,V,W N Vcc T T T G T G T E State of switching device SW: Connect to drive circuit and input gate signal. ON: Bias voltate of gate +V. OFF: Reverse bias voltage of gate -V. Vcc=Vcc/ 3
MBIVN-- Characteristics (Representative) [ T, T ] Tj= C / chip VGE=V V V V 8V 3 [ T, T ] Tj= C / chip VGE=V V V V 8V 3 [ T, T ] VGE=V / chip [ T, T ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= C / chip 8 Tj=C Tj=C Collector - Emitter voltage: VCE [V] Ic=A Ic=A Ic=3.A 3 Gate - Emitter voltage: VGE [V] [ T, T ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=V, f= MHz, Tj= C [ T, T ] Dynamic gate charge (typ.) Vcc=V, Ic=A, Tj= C. 8 Capacitance: Cies, Coes, Cres [nf].. Cies Cres Coes Gate-Emitter voltage: VGE [V] - - - VCE VGE - - - Collector-Emitter voltage: VCE [V]. 3 Collector - Emitter voltage: VCE [V] - -8 -. -. -..... Gate charge: Qg [uc]
MBIVN-- Switching loss : Eon, Eoff, Err [mj/pulse ] [ SW mode A ] Switching loss vs. Collector current (typ.) Vcc=3VVGE=±VRg=.Ω 8 Eon( C) 7 Eoff( C) Eoff( C) Eon( C) 3 Err( C) Err( C) Switching time : ton, tr, toff, tf [ nsec ] [ SW mode A ] Switching time vs. Collector current (typ.) Vcc=3VVGE=±VRg=.Ω ton( C) ton( C) toff( C) toff( C) tr( C) tr( C) tf( C) tf( C) Switching loss : Eon, Eoff, Err [mj/pulse ] [ SW mode A ] Switching loss vs. Gate resistanse (typ.) Vcc=3VIc=AVGE=±V Eon( C) Eoff( C) Eon( C) Eoff( C) Err( C) Err( C) Switching time : ton, tr, toff, tf [ nsec ] [ SW mode A ] Switching time vs. Gate resistanse (typ.) Vcc=3VIc=AVGE=±V ton( C) toff( C) toff( C) ton( C) tr( C) tr( C) tf( C) tf( C) Gate Resistance: Rg [Ω] Gate Resistance: Rg [Ω] [ SW mode A ] Switching time vs. Collector current (typ.) Vcc=3VVGE=±VRg=.Ω [ T, T ] Reverse bias safe operating area (max.) VGE=V,-VGE V, Rg.Ω,Tj = C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr( C) Irr( C) Irr( C) trr( C) RBSOA (Repetitive pulse) 8 Collector-Emitter voltage : VCE [V] (Main terminals)
MBIVN-- [ T3, T (RB-IGBT)] Tj= C / chip VGE=V V V V 8V 3 [ T3, T (RB-IGBT)] Tj= C / chip VGE=V V V V 8V 3 [ T3, T (RB-IGBT)] VGE=V / chip [ T3, T (RB-IGBT)] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= C / chip 8 Tj=C Tj=C Collector - Emitter voltage: VCE [V] Ic=A Ic=A Ic=3.A 3 Gate - Emitter voltage: VGE [V] [ T3, T (RB-IGBT)] Capacitance vs. Collector-Emitter voltage (typ.) VGE=V, f= MHz, Tj= C [ T3, T (RB-IGBT)] Dynamic gate charge (typ.) Vcc=3V, Ic=A, Tj= C Capacitance: Cies, Coes, Cres [nf]. Cies Coes Cres Gate-Emitter voltage: VGE [V] - - - VCE VGE 3 - - -3 Collector-Emitter voltage: VCE [V]. 3 Collector - Emitter voltage: VCE [V] - - -. -.... Gate charge: Qg [uc]
MBIVN-- Switching loss : Eon, Eoff, Err [mj/pulse ] [ SW mode B ] Switching loss vs. Collector current (typ.) Vcc=3VVGE=±VRg=.7Ω 8 Eon( C) 7 Eon( C) Eoff( C) Eoff( C) 3 Err( C) Err( C) Switching time : ton, tr, toff, tf [ nsec ] [ SW mode B ] Switching time vs. Collector current (typ.) Vcc=3VVGE=±VRg=.7Ω ton( C) ton( C) tr( C) tr( C) toff( C) toff( C) tf( C) tf( C) Switching loss : Eon, Eoff, Err [mj/pulse ] [ SW mode B ] Switching loss vs. Gate resistanse (typ.) Vcc=3VIc=AVGE=±V Eon( C) Eon( C) 3 Eoff( C) Eoff( C) Err( C) Err( C) Switching time : ton, tr, toff, tf [ nsec ] [ SW mode B ] Switching time vs. Gate resistanse (typ.) Vcc=3VIc=AVGE=±V ton( C) ton( C) toff( C) toff( C) tr( C) tr( C) tf( C) tf( C) Gate Resistance: Rg [Ω] Gate Resistance: Rg [Ω] [ SW mode B ] Switching time vs. Collector current (typ.) Vcc=3VVGE=±VRg=.7Ω [ T3, T ] Reverse bias safe operating area (max.) VGE=V,-VGE V, Rg.7Ω,Tj = C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr( C) trr( C) Irr( C) Irr( C) RBSOA (Repetitive pulse) 8 7 Collector-Emitter voltage : VCE [V] (Main terminals)
MBIVN-- [ T, T ] Forward current vs. forward on voltage (typ.) chip Transient thermal resistance (max.) Forward current : IF [A] Tj= C Tj= C 3 Forward on voltage : VF [V] Thermal resistanse : Rth(j-c) [ C/W ]. Zth =. n 3 τ n.3.3.98.78 IGBT.83..983.98 r n FWD.899.97.3.3 RB-IGBT.398...97..... Pulse width : Pw [sec] n n= FWD RB-IGBT IGBT t τ n r e [ Thermistor ] Temperature characteristic (typ.) Reverse recovery withstand capability for FWD Tj= C Resistance : R [kω] IRP [A] Pmax[T,T]=kW. - - - 8 8 8 Temperature [ C ] VRP [V] 8
MBIVN-- Outline Drawings, mm Weight: 3g (typ.) Equivalent Circuit Schematic : RB-IGBT (Reverse Bolcking IGBT) 9
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