December 28 Preliminary MMG5S2B6UC 2 5 IGBT Module RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery PPLICTIONS Welding Machine Power Supplies Others IGBT-inverter BSOLUTE MXIMUM RTINGS(T C = C unless otherwise specified) Parameter/Test Conditio alues CES GES Collector Emitter oltage Gate Emitter oltage 2 ±2 I C DC Collector Current T C =,T Jmax= T C =95,T Jmax = 5 I CM Repetitive Peak Collector Current tp=ms P tot Power Dissipation Per IGBT T C =,T Jmax = W Diode-inverter BSOLUTE MXIMUM RTINGS (T C = C unless otherwise specified) Parameter/Test Conditio alues RRM Repetitive Reverse oltage 2 I F() I FRM verage Forward Current Repetitive Peak Forward Current tp=ms 5 I 2 t, t=ms, R = 2 S MacMic Science & Technology Co., Ltd. dd:#8, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R.of China Tel.:+86-59-85678 Fax:+86-59-856229 Post Code:222 Website:www.macmicst.com
MMG5S2B6UC IGBT-inverter ELECTRICL CHRCTERISTICS (T C = C unless otherwise specified) Parameter/Test Conditio Min. Typ. Max. GE(th) Gate Emitter Threshold oltage CE = GE, I C =2m 5. 5.6 6.4 I C =5, GE =5, 2.2 2.65 CE(sat) Collector Emitter Saturation oltage I C =5, GE =5, 2.4 I C =5, GE =5, T J =5 2.45 I CES Collector Leakage Current CE =2, GE =, CE =2, GE =, T J =5 I GES Gate Leakage Current CE =, GE =±2, -4 4 R gint Integrated Gate Resistor 2 Q g Gate Charge CE =6, I C =5, GE =5.28 C ies Input Capacitance.6 CE =, GE =, f =MHz C res Reverse Trafer Capacitance 6 6 t d(on) Turn on Delay Time CC =6,I C =5 65 R G =5Ω, T J =5 65 t r Rise Time GE =±5, Inductive Load 4 4 T J =5 T J= 4 t d(off) Turn off Delay Time CC =6,I C =5 29 R G =5Ω, T J =5 GE =±5, 7 t f Fall Time Inductive Load T J =5 E on E off I SC R thjc Turn on Energy Turn off Energy Short Circuit Current CC =6,I C =5 R G =5Ω, GE =±5, Inductive Load Junction to Case Thermal Resistance ( Per IGBT) tpsc µs, GE =5 T J =5, CC =6 T J =5 T J =5 5.4 5.9 2.2 2.4 45.5 µ m n Ω µc nf pf K /W Diode-inverter ELECTRICL CHRCTERISTICS (T C = C unless otherwise specified) Parameter/Test Conditio Min. Typ. I F =5, GE =, 2. F Forward oltage I F =5, GE =,.85 I F =5, GE =, T J =5.8 t rr Reverse Recovery Time I I RRM Max. Reverse Recovery Current F =5, R =6 68 di F /dt=-/μs Q RR Reverse Recovery Charge T J =5 7.2 Reverse Recovery Energy E rec R thjcd Junction to Case Thermal Resistance ( Per Diode).5 Max. 2.6 µc K /W 2
MODULE CHRCTERISTICS (T C = C unless otherwise specified) Parameter/Test Conditio alues T Jmax Max. Junction Temperature T Jop Operating Temperature -4~5 T stg isol MMG5S2B6UC Storage Temperature -4~ Isolation Breakdown oltage C, 5Hz(R.M.S), t=minute CTI Comparative Tracking Index >2 Torque to heatsink Recommended(M6) ~5 to terminal Recommended(M5) 2.5~5 Weight 6 Nm Nm g 5 ge=7 ge=5 ge= ge= 5 5 ge=9 GE =5 T J =5 2 4 2 4 5 CE () Figure. Typical Output Characteristics IGBT-inverter CE () Figure 2. Typical Output Characteristics IGBT-inverter
MMG5S2B6UC 8 CE =2 5 2 CE =6 I C =5 GE =±5 T J =5 6 4 EonEoff() 9 6 Eon Eoff 2 5 6 7 8 9 2 2 4 5 6 GE () Figure. Typical Trafer characteristics IGBT-inverter Rg(Ω) Figure 4. Switching Energy vs Gate Resistor IGBT-inverter () EonEoff(m 2 5 CE =6 R g =5Ω GE =±5 T J =5 R g =5Ω GE =±5 T J =5 Eon Eoff 5 5 5 2 4 6 8 2 4 I C () Figure 5. Switching Energy vs Collector Current IGBT-inverter 9 CE () Figure 6. Reverse Biased Safe Operating rea IGBTinverter 6 5 6 45 DC IF() 4 DC 2 5 5 5 T C ( ) Figure 7. Collector Current vs Case temperature 4 IGBT -inverter 5 5 T C ( ) Figure 8. Forward current vs Case temperature Diode -inverter
MMG5S2B6UC 5 4 CE =6 I F =5 T J =5 IF() 5 EREC() 2.5.5 2 2.5 2 4 5 6 F () Rg(Ω) Figure 9. Diode Forward Characteristics Diode -inverter Figure. Switching Energy vs Gate Resistor Diode - inverter 8 CE =6 R g =5Ω T J =5 ) EREC(m 6 4 /W) ZthJc(K/. IGBT 2. DIODE 5.... I F () Figure. Switching Energy vs Forward Current Diode-inverter Rectangular Pulse Duration(S) Figure 2. Traient Thermal Impedance of Diode and IGBT-inverter 5
MMG5S2B6UC Figure. Circuit Diagram Dimeio in (mm) Figure 4. Package Outline 6