DESCRIPTION The STN is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications. % EAS guaranteed with full function reliability approver. STNM-TRG ROHS Compliant This is Halogen Free PIN CONFIGURATION D D D D STN 3V N-Channel Enhancement Mode MOSFET FEATURE 3V/A, R DS(ON) =mω(typ.)@vgs =V 3V/A, R DS(ON) =mω(typ.)@vgs =.V Super high density cell design for extremely low R DS(ON) Exceptional on-resistance and Maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment High Frequency Point-Load Synchronous Buck Converter for MB/NB/VGA Battery Powered System Load Switch D N-Channel Enhancement Mode MOSFET S S S G G S SOP- Top View PART NUMBER INFORMATION ST N M - TR G a b c d e f a : Company name. b : Channel type. c : Product Serial number. d : Package code e : Handling code f : Green product code STN Rev..
STN ORDERING INFORMATION Part Number Package Code Handling Code Shipping STNM-TRG M : SOP- TR : Tape&Reel.K/Reel Year Code : ~ 9, : Week Code : ~ SOP- : Only available in tape and reel packaging. ABSOLUTE MAXIMUM RATINGS (TA = C Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage 3 V VGSS Gate-Source Voltage ± V TA= C A ID Continuous Drain Current, VGS=V A TA=7 C A IDM Pulsed Drain Current B A EAS Single Pulse Avalanche energy L=.mH C 3 mj PD Power Dissipation TA= C TA=7 C TJ Operation Junction Temperature -/ C TSTG Storage Temperature Range -/ C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied... W THERMAL DATA Symbol Parameter Min Typ Max Unit RθJA Thermal Resistance-Junction to Ambient C/W RθJC Thermal Resistance-Junction to Case 3 C/W STN Rev..
ELECTRICAL CHARACTERISTICS(TA = C Unless otherwise noted ) STN Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS =V,ID =μa 3 V VGS(th) Gate Threshold Voltage VDS =VGS, ID =μa.. V IGSS Gate Leakage Current VDS =V,VGS=±V ± na IDSS Zero Gate Voltage Drain Current VDS =V,VGS =V TJ = C RDS(ON) Drain-source On-Resistance B VGS =-V,ID=A VGS =-.V, ID=A VDS =V,VGS =V Gfs Forward Transconductance VDS =-V,ID =-.A S Source-Drain Doide VSD Diode Forward Voltage IS=.7A,VGS=V.7. V IS Continuous Source Current AD A Dynamic Parameters Qg Total Gate Charge. Qgs Gate-Source Charge VDS =V,VGS =.V ID =A. Qgd Gate-Drain Charge Ciss Input Capacitance 3 Coss Output Capacitance VDS =V,VGS =V f =MHz Crss Reverse Transfer Capacitance 3 td(on). tr Turn-On Time td(off) tf Turn-Off Time VDD=V, VGS=V, ID=-A, RG=3.3Ω Note: A. The value of R θja is measured with the device mounted on in FR- board with oz. Copper, in a still air environment with TA= C. B. The data tested by pulsed, pulse width 3uS, duty cycle % C. The EAS data shows Max. rating. The test condition is VDD=-V,VGS=-V,L=.mH. D. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet 9. μa mω nc pf ns STN Rev.. 3
STN TYPICAL CHARACTERISTICS Output Characteristics On Resistance VS Gate Source Voltage ID-Drain Current(A) VGS=7,, V VGS=.V VGS=.V RDS(Ω) 3 C C ID=A.. 3 7 9 VDS-Drain Source Voltage(V) VGS-Gate Source Voltage(V) RDS(ON)(mΩ) Drain Source On Resistance VGS=.V VGS=V 3 ID-Drain Current(A) VGS(V) Gate Threshold Voltage 3 IDS=μA... - - 7 Tj-Junction Temperature( C) Gate Charge Drain Source On Resistance VGS-Gate Source Voltage(V) VGS(V)........ - - 7 QG-Gate Charge(nC) TJ-Junction Temperature( C) STN Rev..
STN TYPICAL CHARACTERISTICS Capacitance Source Drain Diode Forward C(pF) Crss Coss Ciss IS-Source Current(A)... TJ= C TJ= C 3 9 7 3...... VDS-Drain Source Voltage(V) VSD-Source Drain Voltage(V) Power Dissipation Drain Current Ptot-Power(W) 3. 3... ID-Drain Current(A) VGS=V TJ-Junction Temperature( C) TJ-Junction Temperature( C) Normalized Transient Thermal Resistance.. Duty=.,.3,.,.,.,. Thermal Transient Impedance Single Pulse..... Square Wave Pulse Duration(Sec) STN Rev..
STN SOP- PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A.3.7.3.9 A.... A.3..3. b.33..3. c.7... D.7... E 3....7 E.... e.7 BSC. BSC L..7.. θ STN Rev..