N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It s typical application is TV and monitor. BS : 200V I D : 8A R DS(ON) : 0.8ohm 2 3 Order Codes Item Sales Type Marking Package Packaging SW P 640 TUBE 2 SW W 640 TUBE Absolute maximum ratings Symbol Parameter Value S Drain to Source Voltage 200 V I D Continuous Drain Current (@T C =25 o C) 8* A Continuous Drain Current (@T C =00 o C).4* A I DM Drain current pulsed (note ) 72 A V GS Gate to Source Voltage ± 30 V E AS Single pulsed Avalanche Energy (note 2) 600 603 mj E AR Repetitive Avalanche Energy (note ) 38 69 mj dv/dt Peak diode Recovery dv/dt (note 3) 5.5 5 V/ns P D Total power dissipation (@T C =25 o C) 24 245 W Derating Factor above 25 o C.9.96 W/ o C T STG, T J Operating Junction Temperature & Storage Temperature -55 ~ + 50 o C T L Maximum Lead Temperature for soldering purpose, /8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Unit 300 o C Value R thjc Thermal resistance, Junction to case 0.5 0.5 o R thcs Thermal resistance, Case to Sink 0.5 0.3 o R thja Thermal resistance, Junction to ambient 65 45 o Unit Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 203. Rev. 2.0 /5
Electrical characteristic ( T C = 25 o C unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BS Drain to source breakdown voltage V GS =0V, I D =250uA 200 - - V ΔBS Breakdown voltage temperature / ΔT J coefficient I D =250uA, referenced to 25 o C - 0.24 - V/ o C I DSS I GSS Drain to source leakage current =200V, V GS =0V - - ua =60V, T C =25 o C - - 20 ua Gate to source leakage current, forward V GS =30V, =0V - - 00 na Gate to source leakage current, reverse V GS =-30V, =0V - - -00 na On characteristics V GS(TH) Gate threshold voltage =V GS, I D =250uA 2.0-4.0 V R DS(ON) Drain to source on state resistance V GS =0V, I D = 9A - 0.2 0.8 Ω Gfs Forward Transconductance VDS = 40 V, ID = 9A 5 - - S Dynamic characteristics C iss Input capacitance - 350 750 C oss Output capacitance V GS =0V, =25V, f=mhz - 80 240 pf C rss Reverse transfer capacitance - 45 60 t d(on) Turn on delay time - 6 50 tr Rising time =00V, I D =8A, R G =25Ω (note 4,5) - 63 50 t d(off) Turn off delay time - 30 250 ns t f Fall time - 63 00 Q g Total gate charge - 48 80 Q gs Gate-source charge =60V, V GS =0V, I D =8A (note 4,5) - 6 - nc Q gd Gate-drain charge - 30 - Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction - - 8 A I SM Pulsed source current diode in the MOSFET - - 72 A V SD Diode forward voltage drop. I S =8A, V GS =0V - -.5 V T rr Reverse recovery time I S =8A, V GS =0V, - 52 - ns Q rr Breakdown voltage charge di F /dt=00a/us - 960 - uc. Notes. Repeatitive rating : pulse width limited by junction temperature. 2. L = 3.7mH, I AS = 8A, = 50V, R G =25Ω, Starting T J = 25 o C 3. I SD 8A, di/dt = 00A/us, BS, Staring T J =25 o C 4. Pulse Test : Pulse Width 300us, duty cycle 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 203. Rev. 2.0 2/5
BVDSS, (Normalized Drain-Source Breakdown Voltage RDSON, (Normalized Drain-Source ON resistance Vgs, Gate Source Voltage(V) SAMWIN Fig.. On-state characteristics Fig. 2. On-resistance variation vs. drain current and gate voltage VGS=0V Notes:. 250μs Pulse Test 2. T=25 3. VGS 2~0V Step=V VGS=20V Fig. 3. Gate charge characteristics Fig. 4. On state current vs. diode forward voltage 2.0 0.0 8.0 6.0 VDS=60V 50 25 4.0 2.0 0.0 0.0 20.0 40.0 60.0 Qg, Total Gate Charge (nc) Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature.2 2.5. 2.5 0.9 0.5 0.8-70 -45-20 5 30 55 80 05 30 55 80 0-70 -45-20 5 30 55 80 05 30 55 80 TJ Junction Temperture ( ) TJ Junction Temperture ( ) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 203. Rev. 2.0 3/5
Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve Fig. 9. Gate charge test circuit & waveform Same type as 0V V GS Q G Q GS Q GD V GS 2mA Charge nc Fig. 0. Switching time test circuit & waveform R L 90% R GS V IN 0% 0% 0V IN t d(on) t r t d(off) t f t ON t OFF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 203. Rev. 2.0 4/5
Fig.. Unclamped Inductive switching test circuit & waveform Fig. 2. Peak diode recovery dv/dt test circuit & waveform + V GS (DRIVER) 0V I S - L I S () di/dt I RM R G Diode reverse current 0V GS Same type as () Diode recovery dv/dt V F *. dv/dt controlled by RG *. Is controlled by pulse period Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 203. Rev. 2.0 5/5