Two Separated Thyristor Module, 100A ( Low Profile Package ) 14, 15 I T(AV) CHARACTERISTICS to to 150

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NKTA Series Two Separated Thyristor Module, A ( Low Profile Package ) FEATURES High voltage RMS isolating voltage High surge capability Planar SCR chips Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (AlO DBC) Simple mounting (One screw mounting) Compliant to Designed and qualified for multiple level APPLICATIONS Soft starters Brake chopper Light control Power converters Heat and temperature control Low profile package TA Circuit Configuration :, 6, 7 PRODUCT SUMMARY, 11 14, I T(A) A MAJOR RATINGS AND CHARACTERISTICS SYMBOL I T(A) C I TSM/IFSM I t I t DRM/RRM T J 5 Hz 6 Hz 5 Hz 6 Hz Range Range CHARACTERISTICS ALUES 1. to 16 4 to UNIT A ka s ka s ºC ELECTRICAL SPECIFICATIONS OLTAGE RATINGS TYPE NUMBER OLTAGE CODE RRM/ DRM, MAXIMUM REPETITIE PEAK REERSE OLTAGE RSM/ DSM, MAXIMUM NONREPETITIE PEAK REERSE OLTAGE l RRM /ldrm AT C NKTA 1 1 16 16 17 Page 1 of 5

NKTA Series FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS ALUES UNIT Maximum RMS onstate current I T(A) 1 conduction, half sine wave, 5Hz, T C = C Maximum peak, onecycle, onstate nonreptitive surge current Maximum l t for fusing I TSM I t t = ms t =.ms t = ms t =.ms t = ms t =.ms No voltage reapplied % RRM reapplied Sine half wave, initial T J = T J maximum 1. 1. 1. A ka s Maximum l t for fusing Maximum onstate voltage drop Maximum holding current Maximum latching current I t t =.1 to ms, no voltage reapplied ka s TM l H l L l TM = A, T J = 5 C, 1 conduction Anode supply = 6, resistive load, T = 5 C J 1.5 4 BLOCKING PARAMETER SYMBOL TEST CONDITIONS ALUES Maximum peak reverse and offstate leakage current l RRM l DRM T = C J UNIT 5 (1 min) RMS isolation oltage ISO 5 Hz, circuit to base, all terminals shorted (1 s) Critical rate of rise of offstate voltage d/dt T J = TJ maximum, exponential to 67% rated DRM /μs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS ALUES UNIT Maximum peak gate power P GM t p 5 ms, T J = T J maximum Maximum average gate power P G(A) f = 5 Hz, T J = T J maximum Maximum peak gate current I GM A t p 5 ms, T J = T J maximum Maximum peak negative gate voltage GT Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger GT.7 to 1.5 Anode supply = 6, T J = 5 C resistive load; R a = 1Ω I GT to W Maximum gate voltage that will not trigger Maximum gate current that will not trigger GD T = T maximum, 66.7% = applied J J DRM.5 I GD Maximum rate of rise of turnedon current dl/dt T = 5 C, l = 1.5A, t.5 µs J GM r A/μs Page of 5

NKTA Series THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS ALUES UNIT Maximum junction operating temperature range Maximum storage temperature range T J T stg 4 to 4 to C Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink per module R thjc R thcs DC operation Mounting surface, smooth, flat and greased.45.1 C/W Mounting torque, ±% module to heatsink, M4 A mounting compound is recommended and the torque should be rechecked after a period of hours to allow for the spread of the compound. Lubricated threads.. N m Approximate weight Case style g.7 oz. Low Profile package ( NellTop ) Ordering Information Table Device code NK TA 1 1 4 1 4 Nell s Low profile module (NellTop ) Current rating : I T(A) Circuit configuration type oltage code x = DRM/RRM Page of 5

NKTA Series Fig.1 Forward chracteristic of single thyristor Fig. Transient thermal Impedance vs. time (per thyristor).6 I T, (A) typ. max. T J = 5 C T J = C Transient thermal impedance ( C/W).5.4...1.5 1 1.5.1.1.1 1 () TM Time (s) Fig. Power dissipation s. RMS current Fig.4 Surge onstate current s. Cycles 6.4 Max. power dissipation (W) 5 4 Surge onstate current (KA). 1.6 1...4 5 5 5 1 RMS Current (A) Time(cycles) Fig.5 Gate characteristics 1 Peak Forward Gate oltage () Peak Gate Power (w) Average Gate Power (w) Gate voltage () Peak Gate Current (A) C 5 C C Maximum Gate oltage that will not trigger any unit 1 1 Gate current () Page 4 of 5

NKTA Series 4 5 6 7 1 11 1 14 1 16.5 4.5±. 5. 1±..5 1 4 5 6 7 ±.5 5.5±.5 ±. Φ14.5±. Φ1±.5 Φ4.±. 11 1 1 14 16 1±.5 5±.5 ±.5 ±.5 6 1.5±.5 Φ 4 1.6±.1 Φ TQ Circuit Configuration :.5, 6, 7 1±., 11 14, All dimensions in millimeters(inches) Page 5 of 5