1MBI12VC-12P IGBT MODULE (V series) 12V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 12 V Gate-Emitter voltage VGES ±2 V Ic Continuous TC=25 C 16 TC=1 C 12 Collector current Icp 1ms 24 A -Ic 12 -Ic pulse 1ms 24 Collector power dissipation PC 1 device 789 W Junction temperature Tj 175 Operating junction temperature (under switching conditions) Tjop 15 C Storage temperature Tstg -4 ~ +15 Isolation voltage Between terminal and copper base *1 Viso AC : 1min. 4 VAC Mounting M6 5.75 Screw torque *2 Main Terminals M8 1 Nm Sense Terminals M4 2.5 (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value :Mounting 4.25~5.75 Nm (M6), Main Terminals 8~1 Nm (M8), Sense Terminals 1.7~2.5 Nm (M4) 1 811 SEPTEMBER 213
1MBI12VC-12P Electrical characteristics (at Tj= 25 C unless otherwise specified) Items Symbols Conditions Characteristics min. typ. max. Units Zero gate voltage collector current ICES VGE = V, VCE = 12V - - 1. ma Gate-Emitter leakage current IGES VCE = V, VGE=±2V - - 24 na Gate-Emitter threshold voltage VGE (th) VCE = 2V, Ic = 12mA 6. 6.5 7. V Collector-Emitter saturation voltage Tj=25 C - 1.88 2.15 VCE (sat) Tj=125 C - 2.18 - (main terminal) VGE=15V Tj=15 C - 2.28 - Ic = 12A Tj=25 C - 1.7 1.95 VCE (sat) Tj=125 C - 2. - (chip) Tj=15 C - 2.1 - V Internal gate resistance Int Rg - 1.45 - Ω Input capacitance Cies VCE=1V,VGE=V,f=1MHz - 16 - nf Turn-on ton VCC = 6V, Ic =12A - 1.73 - tr Lm = 56nH, VGE=±15V,Tj=125 C -.57 - Turn-off toff Rgon = 1.2 Ω - 1.52 - tf Rgoff =.56 Ω -.15 - µs VF Tj=25 C - 1.88 2.15 (main terminal) Tj=125 C - 2.3 - Forward on voltage VGE= V Tj=15 C - 1.98 - VF IF = 12A Tj=25 C - 1.7 1.95 V (chip) Tj=125 C - 1.85 - Tj=15 C - 1.8 - Reverse recovery time trr IF = 12A,Tj=125 C -.31 - µs Lead resistance, terminal-chip R lead -.146 - mω Thermal resistance characteristics Characteristics Items Symbols Conditions min. typ. max. IGBT - -.19 Thermal resistance Rth(j-c) FWD - -.35 Contact Thermal resistance Rth(c-f) with Thermal Compound(*) -.6 - * This is the value which is defined mounting on the additional cooling fin with thermal compound. Units C/W 2
1MBI12VC-12P Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25,chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 15 C, chip 28 28 24 VGE=2 V 15V 12V 24 VGE=2 V 15V 12V Collector current : Ic [A] 2 16 12 8 1V Collector current : Ic [A] 2 16 12 8 1V 4 8V 4 8V..5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5...5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) 28 VGE=+15V,chip 1 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25,chip Collector current : Ic [A] 24 2 16 12 8 4 Tj=25 C Tj=125 C Tj=15 C Collector - Emitter voltage : VCE [ V ] 8 6 4 2 Ic=24A Ic=12A Ic=6A..5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. 5 1 15 2 25 Gate - Emitter voltage : VGE [ V ] Capacitance : Cies, Coes, Cres [ nf ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=V, f= 1MHz, Tj= 25 C 1 Cies 1 1 Cres Coes 1 1 2 3 Gate-Emitter voltage:vge [V] Dynamic Gate charge (typ.) Tj= 25 C 25 1 2 15 1 5-5 -1-15 -2-25 VCE VGE -15-1 -5 5 1 15 Gate charge : Qg [ uc ] 8 6 4 2-2 -4-6 -8-1 Collectotr-Emitter voltage:vce [V] 3
1MBI12VC-12P Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rgon=1.2Ω, Rgoff=.56Ω Switching time vs. Gate resistance (typ.) Vcc=6V, Ic=12A,VGE=±15V Switching time : ton, tr, toff, tf [ us ] 3. 2.5 2. 1.5 1..5. Tj=15deg.C 3 6 9 12 15 18 21 Collector current : Ic [ A ] ton toff tr tf Switching time : ton, tr, toff, tf [ us ] 6. 5. 4. 3. 2. 1.. Tj=15deg.C toff ton. 1. 2. 3. 4. 5. 6. 7. 8. 9. 1. Gate resistance : Rg [ Ω ] tr tf Switching loss vs. Collector current (typ.) Switching loss vs. Gate resistance (typ.) Vcc=6V, VGE=±15V, Rgon=1.2 Ω, Rgoff=.56Ω Vcc=6V, Ic=12A,VGE=±15V Switching loss : Eon, Eoff, Err [ mj/pulse ] 6 5 4 3 2 1 Tj=15deg.C Eoff Eon Err Switching loss : Eon, Eoff, Err [ mj/pulse ] 8 7 6 5 4 3 2 1 Tj=15deg.C Eon Eoff Err 3 6 9 12 15 18 21 Collector current : Ic [ A ], Forward current : IF [ A ] Reverse bias safe operating area (max.) ± VGE=15V,Tj = 15 C 1 2 3 4 5 6 7 8 Gate resistance : Rg [ Ω ] 28 Collector current : Ic [ A ] 24 2 16 12 8 4 Notice) Please refer to section 12. There is definision of VCE. 2 4 6 8 1 12 14 Collector - Emitter voltage : VCE [ V ] 4
1MBI12VC-12P Forward current : IF [ A ] Forward current vs. Forward on voltage (typ.) chip 28 24 Tj=25 Tj=15 2 Tj=125 16 12 8 4..5 1. 1.5 2. 2.5 3. 3.5 Forward on voltage : VF [ V ] FWD safe operating area (max.) Tj=15 28 Reverse recovery current : Irr [ A ] 12 11 1 Reverse recovery characteristics (typ.) Vcc=6V, VGE=±15V, Rgon=1.2Ω 9 8 7 6 5 4 3 2 1.1 Tj=15deg.C 3 6 9 12 15 18 21 Forward current : IF [ A ] Irr trr Transient thermal resistance (max.).6.5.4.3.2.1. Reverse recovery time : trr [ us ] Reverse recovery current : Irr [ A ] 24 2 16 12 8 4 Notice) Please refer to section 12. There is definision of VCE. Pvmax=.85MW 2 4 6 8 1 12 14 Collector-Emitter voltage : VGE [ V ] Thermal resistanse : Rth(j-c) [ C/W ].1.1 Zth =.1 4 n n= 1 r 1 e t τ n FWD IGBT.1.1.1 1. Pulse width : Pw [ sec ] IGBT FWD r1 r2 r3 r4 τ1 τ2 τ3 τ4.211.734.525.43.24.355.638.733.337.1175.842.695.24.352.651.718 5
1MBI12VC-12P Outline Drawings, mm Equivalent Circuit Schematic Main collector Sense collector Gate Sense emitter Main emitter 6
1MBI12VC-12P WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of September 213. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright 1996-213 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7