800V N-Channel MOSFET BS = 800 V R DS(on) typ = 3.0 A Dec 2005 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nc (Typ.) Extended Safe Operating Area Lower R DS(ON) GS = 100% Avalanche Tested TO-220F 1 21 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Thermal Resistance Characteristics T C =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 800 V Drain Current Continuous (T C = 25 3.0* A Drain Current Continuous (T C = 100 1.9* A M Drain Current Pulsed (Note 1) 12* A Gate-Source Voltage 30 V E AS Single Pulsed Avalanche Energy (Note 2) 320 mj I AR Avalanche Current (Note 1) 3.0 A E AR Repetitive Avalanche Energy (Note 1) 10.7 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 39 W 0.31 W/ T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 300 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature Symbol Parameter Typ. Max. Units R JC Junction-to-Case -- 3.2 R JA Junction-to-Ambient -- 62.5
Electrical Characteristics T C =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = 250 2.5 -- 4.5 V Static Drain-Source On-Resistance = 10 V, = 1.5 A -- 4.0 4.8 R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 800 -- -- V BS / T J SS I GSSF I GSSR C iss Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics = 250 -- 0.99 -- = 800 V, = 0 V -- -- 1 = 640 V, T C = 125 -- -- 10 = 30 V, = 0 V -- -- 100 = -30 V, = 0 V -- -- -100 Input Capacitance -- 700 910 = 25 V, = 0 V, C oss Output Capacitance -- 70 90 f = 1.0 MHz C rss Reverse Transfer Capacitance -- 7 9 Switching Characteristics t d(on) Turn-On Time = 400 V, = 3.0 A, -- 20 40 t r Turn-On Rise Time R G = 25 -- 55 110 t d(off) Turn-Off Delay Time -- 30 60 t f Turn-Off Fall Time -- 40 80 Q g Total Gate Charge = 640V, = 3.0 A, -- 17 22 Q gs Gate-Source Charge = 10 V -- 4.5 -- Q gd Gate-Drain Charge -- 7.5 -- Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 3.0 I SM Pulsed Source-Drain Diode Forward Current -- -- 12 A V SD Source-Drain Diode Forward Voltage I S = 3.0 A, = 0 V -- -- 1.4 V trr Reverse Recovery Time I S = 3.0 A, = 0 V -- 650 -- Qrr Reverse Recovery Charge di F (Note 4) -- 5.2 -- Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=67mH, I AS =3.0A, =50V, R G =25, Starting T J =25 C 3. I SD DD DSS, Starting T J =25 C 4. Pulse Test : Pulse Width 5. Essentially Independent of Operating Temperature
Typical Characteristics R, Reverse Drain Current [A] Capacitance [pf], Drain Current [A], Drain Current [A], Drain-Source Voltage [V], Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics R DS(on), [ Drain-Source On-Resistance 10 1 10 0 150 25 1. = 0V, Drain Current [A] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V SD, Source-Drain voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 1500 1200 900 600 300 C iss C oss C rss 0 10-1 10 0 10 1, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V 2. f = 1 MHz Figure 5. Capacitance Characteristics, Gate-Source Voltage [V] 12 10 8 6 4 2 = 160V = 400V = 640V D = 3.0A 0 0 4 8 12 16 20 Q G, Total Gate Charge [nc] Figure 6. Gate Charge Characteristics
Typical Characteristics (continued) 1.2 3.0 BS, (Normalized) Drain-Source Breakdown Voltage 1.1 1.0 0.9 1. = 0 V 2. R DS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. = 1.5 A 0.8-100 -50 0 50 100 150 200 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 1 Operation in This Area is Limited by R DS(on) 100 s 3.0 2.5, Drain Current [A] 10 0 10-1 10-2 * Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 0 10 1 10 2 10 3, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area DC 100 ms 10 ms 1 ms, Drain Current [A] 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 T C, Case Temperature [ Figure 10. Maximum Drain Current vs Case Temperature Z (t), Thermal Response 10 0 10-1 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 1. Z (t) = 3.2 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10-1 10 0 10 1 t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve
Fig 12. Gate Charge Test Circuit & Waveform 12V 200nF 300nF Same Type as Q g Q gs Q gd 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- 1 L L I 2 2 AS BS -------------------- BS -- BS I AS R G (t) (t) t p Time
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms + _ I S L Driver R G Same Type as dv/dt controlled by RG I S controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period I S ( ) I FM, Body Diode Forward Current di/dt I RM ( ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension TO-220F 10.16±0.20 φ3.18±0.20 4.70±0.20 2.54±0.20 0.70±0.20 15.87±0.20 3.30±0.20 6.68±0.20 12.42±0.20 Pin hole 2.76±0.20 1.47max 9.75±0.20 10.16±0.20 φ3.18±0.20 4.70±0.20 2.54±0.20 0.70±0.20 15.87±0.20 3.30±0.20 12.42±0.20 6.68±0.20 0.80±0.20 0.50±0.20 TO-220F-FM(Full Mold) 2.76±0.20 1.47max 9.75±0.20 0.80±0.20 0.50±0.20 SEMIHOW REV.A0,May 2017