STARPOWER SEMICONDUCTOR TM IGBT GD225HTL120C7S Preliminary Molding Type Module 1200V/225A 6 in one-package General Description STARPOWER IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low V CE(sat) SPT+ IGBT technology Low switching losses 10μs short circuit capability Square RBSOA V CE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply 2011 STARPOWER Semiconductor Ltd. 3/14/2011 1/6 Preliminary
IGBT-inverter T C =25 unless otherwise noted Maximum Rated Values Symbol Description GD225HTL120C7S Units V CES Collector-Emitter Voltage @ T j =25 1200 V V GES Gate-Emitter Voltage ±20 V I C Collector Current @ T C =25 400 A @ T C =100 225 I CM Pulsed Collector Current t p =1ms 450 A P tot Total Power Dissipation @ T j =175 1973 W Off Characteristics V (BR)CES I CES I GES Collector-Emitter T j =25 1200 V Breakdown Voltage V CE =V CES,V GE =0V, Collector Cut-Off Current 5.0 ma T j =25 Gate-Emitter Leakage V GE =V GES,V CE =0V, 400 na Current T j =25 On Characteristics V GE(th) V CE(sat) Gate-Emitter Threshold I C =9.0mA,V CE =V GE, 5.0 6.2 7.0 V Voltage T j =25 I C =225A,V GE =15V, 1.90 2.35 Collector to Emitter T j =25 V Saturation Voltage I C =225A,V GE =15V, 2.10 T j =125 Switching Characteristics Q G Gate charge V GE =-15 +15V 2.3 μc t d(on) Turn-On Delay Time 168 ns t r Rise Time 75 ns t d(off) Turn-Off Delay Time V CC =600V,I C =225A, 440 ns t f Fall Time R G =5.0Ω,V GE =±15 V, 55 ns E on E off Turn-On Switching T j =25 27.9 mj Turn-Off Switching 37.2 mj 2011 STARPOWER Semiconductor Ltd. 3/14/2011 2/6 Preliminary
t d(on) Turn-On Delay Time 176 ns t r Rise Time 75 ns t d(off) Turn-Off Delay Time 510 ns V CC =600V,I C =225A, t f Fall Time 75 ns R G =5.0Ω,V GE =±15 V, Turn-On Switching E on T j =125 13.5 mj E off C ies Turn-Off Switching 22.5 mj Input Capacitance 16.6 nf C oes Output Capacitance V CE =25V,f=1Mhz, 1.20 nf C res I SC Reverse Transfer V GE =0V Capacitance 0.78 nf t S C 10μs,V GE 15 V, SC Data T j =125,V CC =600V, 1050 A V CEM 1200V R Gint Internal Gate Resistance 1.0 Ω DIODE-inverter T C =25 unless otherwise noted Maximum Rated Values Symbol Description GD225HTL120C7S Units V RRM Collector-Emitter Voltage @ T j =25 1200 V I F DC Forward Current @ T C =80 225 A I FRM Repetitive Peak Forward Current t p =1ms 450 A Characteristics Values V F Q r I RM E rec Diode Forward T j =25 1.80 2.20 I F =225A,V GE =0V Voltage T j =125 1.85 V Recovered Charge T j =25 30 V R =600 V, T j =125 57 μc Peak Reverse I F =225A, T j =25 195 Recovery Current R G =5.0Ω, T j =125 255 A Reverse Recovery V GE =-15V T j =25 10.8 Energy T j =125 22.5 mj 2011 STARPOWER Semiconductor Ltd. 3/14/2011 3/6 Preliminary
Electrical Characteristics of NTC T C =25 unless otherwise noted R 25 Rated Resistance 5.0 kω R/R Deviation of R 100 T C =100,R 100 =493.3Ω -5 5 % P 25 Power Dissipation 20.0 mw B 25/50 R 2 =R 25 exp[b 25/50 (1/T 2-1/(298.1 B-value 3375 K 5K))] Symbol Parameter Min. Typ. Max. Units V ISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V L CE Stray Inductance 20 nh R CC +EE R θjc Module Lead Resistance,Terminal to Chip 1.1 mω @ T C =25 Junction-to-Case (per IGBT) 0.076 K/W Junction-to-Case (per DIODE) 0.154 R θcs Case-to-Sink (Conductive grease applied) 0.005 K/W T jmax Maximum Junction Temperature 175 T STG Storage Temperature Range -40 125 Mounting Power Terminal Screw:M5 3.0 6.0 N.m Torque Mounting Screw:M6 3.0 6.0 N.m Weight Weight of Module 910 g 2011 STARPOWER Semiconductor Ltd. 3/14/2011 4/6 Preliminary
Equivalent Circuit Schematic Package Dimension Dimensions in Millimeters 2011 STARPOWER Semiconductor Ltd. 3/14/2011 5/6 Preliminary
Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 2011 STARPOWER Semiconductor Ltd. 3/14/2011 6/6 Preliminary