DESCRIPTION The STP35 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications. STP35M-TRG ROHS Compliant This is Halogen Free PIN CONFIGURATION STP35-3V P-Channel Enhancement Mode MOSFET FEATURE -3V/-.A, RDS(ON) =5mΩ(typ)@VGS =-V -3V/-7.A, RDS(ON) =mω(typ)@vgs =-.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design APPLICATIONS High Frequency Point-of-Load Synchronous Newworking DC-DC Power System Load Switch P-Channel Enhancement Mode MOSFET D D D D D S S SOP-8 Top View S G G S PART NUMBER INFORMATION STP 35 M - TR G a b c d e a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code
STP35 ORDERING INFORMATION Part Number Package Code Handling Code Shipping STP35M-TRG M : SOP-8 TR : Tape&Reel.5K/Reel Year Code : ~ 9, : Week Code : A(~) ~ Z(53~5) SOP-8 : Only available in tape and reel packaging. ABSOLUTE MAXIMUM RATINGS (TA = 5 Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage -3 V VGSS Gate-Source Voltage ± V ID Continuous Drain Current (TC=5 C) A - A VGS=V Continuous Drain Current (TC=7 C) -8.5 A IDM Pulsed Drain Current B -3 A EAS Single Pulse Avalanche energy L=.mH C 7 mj PD Power Dissipation TA=5 C TA=7 C TJ Operation Junction Temperature -55 to5 C TSTG Storage Temperature Range -55 to5 C Note: A.The value of R θja is measured with the device mounted on in FR- board with oz. Copper, in a still air environment with TA=5 C. B.The data tested by pulsed, pulse width 3us, duty cycle % Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 3.. W THERMAL DATA Symbol Parameter Typ Max Unit RθJA Thermal Resistance-Junction to Ambient A Steady-State - 85 C/W RθJL Thermal Resistance Junction to Lead A Steady-State - 5 C/W
ELECTRICAL CHARACTERISTICS(TJ = 5 Unless otherwise noted ) STP35 Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS =V,ID =-5μA -3 V VGS(th) Gate Threshold Voltage VDS =VGS,ID =-5μA -. -.5 V IGSS Gate Leakage Current VDS =V,VGS=±V ± na IDSS Zero Gate Voltage Drain Current VDS =-V,VGS =V TJ =55 C RDS(ON) Drain-source On-Resistance B VGS =-V,ID=-.A VGS =-.5V, ID=-7.A VDS =-V,VGS =V - Gfs Forward Transconductance VDS =-5V,ID =-8.A 3 S Source-Drain Doide VSD Diode Forward Voltage IS=-A,VGS=V -.8 -. V IS Continuous Source Current AD - A Dynamic Parameters Qg Total Gate Charge Qgs Gate-Source Charge VDS =-5V, VGS =-.5V, ID =-8.A 8. Qgd Gate-Drain Charge. Ciss Input Capacitance 95 Coss Output Capacitance VDS =-5V, VGS =V, f =MHz 35 Crss Reverse Transfer Capacitance 35 td(on). Tr Turn-On Time td(off) 87 tf Turn-Off Time VDD=5V, VGS=-V, ID=-5A, RG=3.3Ω Note: A. The value of R θja is measured with the device mounted on in FR- board with oz. Copper, in a still air environment with TC=5 C. B. The data tested by pulsed, pulse width 3uS, duty cycle % C. The EAS data shows Max. rating. The test condition is VDD=-5V,VGS=-V,L=.mH. D. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 5 9.7 9.8-5 5 μa mω nc pf ns 3
STP35 TYPICAL CHARACTERISTICS (5 Unless Note) Output Characteristics Transfer Characteristics -ID-Drain Current(A) 8 VGS=-5,-, -V, -V VGS=-.5V.5.5 -ID-Drain Current(A) 8 TJ=5 C TJ=5 C....8 -VDS-Drain Source Voltage(V) -VGS-Gate Source Voltage(V) Gate Threshold Voltage Drain Source On Resistance. VGS(V).. -. -. -5-5 5 5 75 5 5 RDS(ON)(mΩ) 35 3 5 5 5 VGS=-.5V VGS=-V 3 5 Tj-Junction Temperature( C) -ID-Drain Current(A) Gate Charge Drain Source On Resistance -VGS(V) 8 7 5 3.5 5 7.5.5 5 7.5 Normalized On Resistance..3...9.8.7. -5-5 5 5 75 5 5 QG-Gate Charge(nC) TJ-Junction Temperature( C)
STP35 TYPICAL CHARACTERISTICS (5 Unless Note) Capacitance Source Drain Diode Forward 3 C(pF) 8 Crss Coss Ciss -IS-Source Current(A) TJ=5 C TJ=5 C 5 5 5 3....8.. -VDS-Drain Source Voltage(V) -VSD-Source Drain Voltage(V) Power Dissipation On Resistance VS Gate Source Voltage 5 3.5 Ptot-Power(W) 3.5.5 RDS(mΩ) 5.5 8 8 TJ-Junction Temperature( C) VGS-Gate Source Voltage(V) Normalized Transient Thermal Resistance.. Duty=.5,.,.,.5,.,. Thermal Transient Impedance Single Pulse..... Square Wave Pulse Duration(Sec) 5
STP35 SOP-8 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A.35.75.53.9 A..5.. A.35.55.53. b.33.5.3. c.7.5.. D.7 5..85. E 3.8..5.57 E 5.8..8. e.7 BSC.5 BSC L..7..5 θ 8 8