SIDDHARTH RAJAN. Physics B.S., 2001
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1 Research Interests SIDDHARTH RAJAN High-speed electronic devices, wide bandgap power switching transistors, nanoscale material and device design, biological and chemical sensors, molecular beam epitaxy, GaN and related materials. Professional Preparation University of California-Santa Barbara Electrical and Computer Engineering Ph.D Electrical and Computer Engineering M.S., 2004 Birla Institute of Technology and Science-Pilani Electrical Engineering B.E., 2001 Appointments 08/08- present Physics B.S., 2001 Assistant Professor, Electrical and Computer Engineering/Materials Science and Engineering, The Ohio State University 06/07-07/08 Assistant Project Scientist, University of California-Santa Barbara 01/07-06/07 Staff Scientist, General Electric Global Research Center, Niskayuna Honors and Awards 2010 Co-Advisor to P. Ramesh Best Student Paper Award SPIE/ASME 2007 Best Paper Award at Workshop on Frontiers of Electronics Best Paper Award at the 2005 TMS Electronics Materials Conference JNC Summer Fellowship for undergraduate research awarded by JNC-ASR, Bangalore, India Service Journal Review: Electron Device Letters, IEEE Trans. Electron Devices, Applied Physics Letters, Solid-State Electronics, Physica Status Solidi C, Journal of Crystal Growth Funding Panel Review: NSF (ENG), NSERC (Canada), DOE Solid State Lighting (USA) Graduate Thesis Advisor to (current) Digbijoy Nath (OSU), Pil Sung Park (OSU), Sriram Krishnamoorthy (OSU), Fatih Akyol (OSU) Teaching: ECE 331: Introduction to Materials for Electrical Engineers Au08, Sp09, Sp10 ECE 432: Semiconductor Device Physics Wi09 ECE 730: Introduction to Solid State Physics Au09 ECE : Principles of Wide Bandgap Semiconductor Devices Sp10 Publications: Journal Publications: D. Jena and S. Rajan, Effect of Optical Phonon Scattering on the Performance of GaN Transistors, submitted to Appl. Phys.Lett. (2010) 33. D. Nath, E. Gur, S. Ringel, and S. Rajan, Molecular Beam Epitaxy of N-polar InGaN, to appear in Appl. Phys. Lett. (2010)
2 32. Yang, C.K., Roblin, P., De Groote, F., Ringel, S.A., Rajan, S., Teyssier, J.P., Poblenz, C., Pei, Y., Speck, J., Mishra, U.K., Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 58(5), 1077 (2010) 31. P.Ramesh, S. Krishnamoorthy, P.S. Park, S. Rajan, G. Washington, Distributed Intelligence using Gallium Nitride based Active Devices, Proc. of SPIE/ASME Smart Materials Conference, Anaheim, Mar Pei, Y.; S. Rajan, M. Higashiwaki, Z. Chen, S. P. DenBaars, U.K.Mishra, Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs IEEE Elec. Dev. Lett. 30 (4), Page(s): (2009). 29. Fujiwara, Tetsuya, Siddharth Rajan, Stacia Keller, Masataka Higashiwaki, James S. Speck.; Steven P. DenBaars; Umesh K Mishra., Enhancement-Mode m-plane Heterojunction AlGaN/GaN Transistor, Applied Physics Express, Volume 2, Issue 1, pp (2009). 28. Adele C. Tamboli, Mathew C. Schmidt, Siddharth Rajan, James S. Speck, Umesh K. Mishra, Steven P. DenBaars, and Evelyn L. Hu, Smooth Top-Down Photoelectrochemical Etching of m-plane GaN, J. Electrochem. Soc., Volume 156, Issue 1, pp. H47-H51 (2009) S. Keller, C. S. Suh, N. A. Fichtenbaum, M. Furukawa, R. Chu, Z. Chen, K. Vijayraghavan, S. Rajan, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures, J. Appl. Phys. 104, (2008). 26. Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metal-organic chemical vapor deposition Stacia Keller, Chang Soo Suh, Zhen Cheng, Rongming Chu, Siddharth Rajan, Nicholas Fichtenbaum, Motoko Furukawa, Steven P. DenBaars, James S. Speck, and Umesh K Mishra, Journal of Applied Physics 103, (2008). 25. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit Ajay Raman, Sansaptak Dasgupta, David Brown, Siddharth Rajan, James S. Speck and Umesh K. Mishra, Jpn. J. Appl. Phys. 47 (2008) pp Electrical characterization of low defect density nonpolar (110) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO), Imer, Bilge; Haskell, Benjamin; Rajan, Siddharth; Keller, Stacia; Mishra, Umesh K.; Nakamura, Shuji; Speck, James S.; Denbaars, Steven P., Journal of Materials Research, vol. 23, issue 2, pp R. M. Chu, C. Poblenz, M. H. Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. K. Shen, L. K. Shen, J. S. Speck, and U. K. Mishra, "Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF4 treatment," Applied Physics Express, vol. 1, art no , 2008
3 22. S. Keller, C. S. Suh, N. A. Fichtenbaum, M. Furukawa, R. M. Chu, S. Rajan, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures," Journal of Applied Physics, vol. 104 (9), art no , M. H. Wong, Y. Pei, R. M. Chu, S. Rajan, B. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-Face metal-insulator-semiconductor high electron mobility transistors with AlN backbarrier," IEEE Electron Device Letters, vol. 29 (10), pp , Electron Mobility in N-polar GaN/AlGaN/GaN Heterostructures David F. Brown, Siddharth Rajan, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra, Appl. Phys. Lett. 93, (2008). 19. Study of Interface barrier of SiNx/GaN interface for Nitrogen-polar GaN based High Electron Mobility Transistors Nidhi, Siddharth Rajan, Stacia Keller, Feng Wu, Steven P. Denbaars, James S. Speck. and Umesh K. Mishra, J. Appl. Phys. 103, (2008). 18. Properties of oxide deposited on c-plane AlGaN/GaN heterostructure Vert, A.V.; Rajan, S., Electronics Letters, vol.44, no.12, pp , June AlGaN/GaN HEMTs: Recent Developments and Future Directions Siddharth Rajan, Umesh K. Mishra, and Tomas Palacios, to appear in International Journal of High Speed Electronics and Systems N-polar GaN/AlGaN/GaN High Electron Mobility Transistors, S. Rajan, A. Chini, M. Wong, J.S. Speck, and U.K. Mishra, Journal of Applied Physics 102, (2007). 15. N-face High Electron Mobility Transistors with a GaN-spacer M.H. Wong, S. Rajan, R.M. Chu, T. Palacios, C.S. Suh, L.S. McCarthy, S. Keller, J.S. Speck and U.K. Mishra, Phys. Stat. Sol. (a) 204, 2049 (2007) Electron Mobility in Graded AlGaN Alloys Siddharth Rajan, Huili Xing, Debdeep Jena, Steve P. Denbaars and Umesh K. Mishra, Applied Physics Letters 88, (2006). 13. Characterisation of multiple carrier transport in indium nitride, grown by molecular beam epitaxy T. B. Fehlberg, G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmueller, S. Rajan, S. Bernardis, and J. S. Speck, Japanese Journal of Applied Physics Part 2-Letters & Express Letters 45 (37-41): L1090-L1092 Oct Carrier transport and confinement in polarization-induced 3D electron slabs: Importance of alloy scattering in AlGaN John Simon, Albert Wang, Siddharth Rajan, Huili Xing and Debdeep Jena, Applied Physics Letters, Appl. Phys. Lett. 88, (2006).
4 11. Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H- SiC by Plasma-Assisted Molecular Beam Epitaxy Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomas Palacios, Siddharth Rajan, Umesh K. Mishra and Jim S. Speck, IEICE Transactions, E89-C (7), pp Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures S. Rajan, M. Wong, Y. Fu, F. Wu, J.S. Speck, and U.K. Mishra, Japanese Journal of Applied Physics, Vol. 44, No. 49,, pp. L1478-L1480, Ion Implanted GaN/AlGaN HEMTs with non-alloyed Ohmic Contacts Haijiang Yu, L. McCarthy, S. Rajan, S. Keller, S. Denbaars, J. Speck, U. Mishra, IEEE Electron Device Letters, 26 (5), pp , May Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) C. Poblenz, P. Waltereit, S. Rajan, U. K. Mishra, J. S. Speck, P. Chin, I. Smorchkova, and B. Heying, J. Vac. Sci. Technol. B 23, 1562 (2005) 7. Influence of the Dynamic Access Resistance in the gm and ft Linearity of AlGaN/GaN HEMTs T. Palacios, S. Rajan, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, IEEE Trans. Elec. Dev., 52 (10), pp (2005). 6. High-Power AlGaN/GaN HEMTs for Ka-Band Applications T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, IEEE Elec. Dev. Lett. 26 (11), pp (2005) MBE-Grown AlGaN/GaN HEMTs on SiC Siddharth Rajan, Christiane Poblenz, Patrick Waltereir, Arpan Chakraborty, James S. Speck and Umesh K. Mishra, International Journal of High Speed Electronics and Systems, 14 (3), pp (2004). 4. An AlGaN/GaN Polarization-Doped Field-Effect Transistor for Microwave Power Applications Siddharth Rajan, Huili Xing, Debdeep Jena, Steve Denbaars and Umesh Mishra Appl. Phy. Lett. 84 (9), pp , March 1, Power Performance of AlGaN/GaN HEMTs grown on SiC by Plasma-Assisted MBE Siddharth Rajan, Patrick Waltereit, Christiane Poblenz, Sten J. Heikman, Daniel S. Green, James S. Speck and Umesh K. Mishra IEEE Electron Device Letters, 25 (5), pp , May Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
5 Christiane Poblenz, Patrick Waltereit, Siddharth Rajan, Sten J. Heikman, Umesh K. Mishra and James S. Speck, Journal of Vacuum Science & Technology B, 22(3), pp , May Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors Patrick Waltereit, Christiane Poblenz, Siddharth Rajan, Feng Wu, Umesh K. Mishra and James S. Speck, Japanese Journal of Applied Physics, 43 (12A), pp. L1520-L1523, 2004
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