28C010T. 1 Megabit (128K x 8-Bit) EEPROM. Memory FEATURES: DESCRIPTION: Logic Diagram

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28C1T 1 Megabit (128K x 8-Bit) EEPROM FEATURES: 128k x 8-bit EEPROM RAD-PAK radiation-hardened agait natural space radiation Total dose hardness: - > 1 krad (Si), depending upon space mission

Pin RAD-PAK Flat Pack - 32 Pin RAD-PAK DUAL INLINE PACKAGE - JEDEC-approved byte-wide pinout High speed: - 12, 15, and 2 maximum access times available High endurance: - 1, erase/write (in Page

1 28C1T 1 Megabit (128K x 8-Bit) EEPROM FEATURES: 128k x 8-bit EEPROM RAD-PAK radiation-hardened agait natural space radiation Total dose hardness: - > 1 krad (Si), depending upon space mission Excellent Single event 25 C - SEL TH > 12 MeV cm 2 /mg (Device) - SEU TH > 9 MeV cm 2 /mg( Cells) - SEU TH > 18 MeV cm 2 /mg (Write Mode) - SET TH > 4 MeV cm 2 /mg (Read Mode) Package: - 32 Pin RAD-PAK Flat Pack - 32 Pin RAD-PAK DUAL INLINE PACKAGE - JEDEC-approved byte-wide pinout High speed: - 12, 15, and 2 maximum access times available High endurance: - 1, erase/write (in Page Mode), - 1 year data retention Page write mode: - 1 to 128 bytes Automatic programming - 1 ms automatic page/byte write Low power dissipation - 2 mw/mhz active (typical) - 11 µw standby (maximum) Standard JEDEC package width DESCRIPTION: Logic Diagram Maxwell Technologies 28C1T high-deity 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 1 krad (Si) total dose tolerance, depending upon space mission. The 28C1T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operatio faster. It also features data polling and a Ready/Busy signal to indicate the completion of erase and programming operatio. In the 28C1T, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. The 28C1T is designed for high reliability in the most demanding space applicatio. Maxwell Technologies' patented RAD-PAK packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 1 krad(si) radiation dose tolerance. This product is available with screening up to Class S Rev 16 1 (858) Fax: (858) Maxwell Technologies

2 1 Megabit (128K x 8-Bit) EEPROM 28C1T TABLE 1. 28C1T PINOUT DESCRIPTION PIN SYMBOL DESCRIPTION 12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 A-A16 Address 13, 14, 15, 17, 18, 19, 2, 21 I/O - I/O7 Data I/O 24 OE Output Enable 22 CE Chip Enable 29 WE Write Enable 32 V CC Power Supply 16 V SS Ground 1 RDY/BUSY Ready/Busy 3 RES Reset TABLE 2. 28C1T ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN TYP MAX UNITS Supply Voltage (Relative to V SS ) V CC V Input Voltage (Relative to V SS ) V IN V Package Weight RP 7.4 Grams RT 2.7 RD 1.9 Thermal Impedance (RP and RT Packages) F JC 2.4 C/W Thermal Impedance (DIP Package) F JC 2.17 C/W Operating Temperature Range T OPR C Storage Temperature Range T STG C 1. V IN min = -3.V for pulse width < 5. TABLE 3. DELTA LIMITS 1 PARAMETER VARIATION 2 I CC1 ±1% I CC2 ±1% I CC3A ±1% I CC3B ±1% 1. Parameters are measured and recorded as Deltas per MIL-STD-883 for Class S Devices 2. Specified in Table Rev Maxwell Technologies

3 1 Megabit (128K x 8-Bit) EEPROM 28C1T TABLE 4. 28C1T RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNITS Supply Voltage V CC V Input Voltage V IL V V IH 2.2 V CC +.3 RES_PIN V H V CC -.5 V CC V IL min = -1.V for pulse width < 5 TABLE 5. 28C1T CAPACITANCE (T A = 25 C, f = 1 MHZ) PARAMETER SYMBOL MIN MAX UNITS Input Capacitance: V IN = V 1 C IN 6 pf Output Capacitance: V OUT = V 1 C OUT 12 pf 1. Guaranteed by design. TABLE 6. 28C1T DC ELECTRICAL CHARACTERISTICS (V CC = 5V ± 1%, T A = -55 TO +125 C, UNLESS OTHERWISE SPECIFIED) PARAMETER TEST CONDITION SUBGROUPS SYMBOL MIN MAX UNITS Input Leakage Current V CC = 5.5V, V IN = 5.5V 1, 2, 3 I IL 2 1 Output Leakage Current V CC = 5.5V, V OUT = 5.5V/.4V 1, 2, 3 I LO 2 µa Standby V CC Current CE = V CC 1, 2, 3 I CC1 2 µa Operating V CC Current I OUT = ma, Duty = 1%, Cycle = 1µs at V CC = 5.5V Input Voltage Output Voltage 2 RES_PIN 1. I LI for RES = 1uA max. CE = V IH I CC2 1 ma I OUT = ma, Duty = 1%, Cycle = 15 at V CC = 5.5V µa 1, 2, 3 I CC3A 15 ma 1, 2, 3 I CC3B 5 1, 2, 3 V IL.8 V V IH 2.2 V H V CC -.5 I OL = 2.1 ma 1, 2, 3 V OL.4 V I OH = -.4 ma V OH 2.4 I OH = -.1 ma V OH V CC -.3V 2. RDY/BSY is an open drain output. Only V OL applies to this pin Rev Maxwell Technologies

4 1 Megabit (128K x 8-Bit) EEPROM 28C1T TABLE 7. 28C1T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (V CC = 5V + 1%, T A = -55 TO +125 C) PARAMETER SYMBOL SUBGROUPS MIN MAX UNITS Address Access Time CE = OE = V IL, WE = V IH t ACC 9, 1, Chip Enable Access Time OE = V IL, WE = V IH t CE 9, 1, Output Enable Access Time CE = V IL, WE = V IH Output Hold to Address Change CE = OE = V IL, WE = V IH t OE 9, 1, 11 t OH 9, 1, Output Disable to High-Z 2 CE = V IL, WE = V IH CE = OE = V IL, WE = V IH t DF t DFR 9, 1, RES to Output Delay 3 CE = OE = V IL, WE = V IH t RR 9, 1, Test conditio: Input pulse levels -.4V to 2.4V; input rise and fall times < 2; output load - 1 TTL gate + 1pF (including scope and jig); reference levels for measuring timing -.8V/1.8V. 2. t DF and t DFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design Rev Maxwell Technologies

5 1 Megabit (128K x 8-Bit) EEPROM 28C1T TABLE 8. 28C1T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS (V CC = 5V + 1%, T A = -55 TO +125 C) PARAMETER SYMBOL SUBGROUPS MIN 1 MAX UNITS Address Setup Time t AS 9, 1, 11 Chip Enable to Write Setup Time (WE controlled) t CS 9, 1, 11 Write Pulse Width CE controlled WE controlled Address Hold Time t CW t WP 9, 1, 11 t AH 9, 1, Data Setup Time t DS 9, 1, Data Hold Time t DH 9, 1, Chip Enable Hold Time (WE controlled) t CH 9, 1, 11 Write Enable to Write Setup Time (CE controlled) t WS 9, 1, 11 Write Enable Hold Time (CE controlled) t WH 9, 1, Rev Maxwell Technologies

6 1 Megabit (128K x 8-Bit) EEPROM 28C1T TABLE 8. 28C1T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS (V CC = 5V + 1%, T A = -55 TO +125 C) PARAMETER SYMBOL SUBGROUPS MIN 1 MAX UNITS Output Enable to Write Setup Time t OES 9, 1, 11 Output Enable Hold Time t OEH 9, 1, 11 Write Cycle Time t WC 9, 1, ms Data Latch Time Byte Load Window t DL 9, 1, 11 t BL 9, 1, µs Byte Load Cycle t BLC 9, 1, µs Time to Device Busy t DB 9, 1, Write Start Time t DW 9, 1, RES to Write Setup Time t RP 9, 1, µs V CC to RES Setup Time t RES 9, 1, µs 1. Use this device in a longer cycle than this value Rev Maxwell Technologies

7 1 Megabit (128K x 8-Bit) EEPROM 28C1T 2. t WC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after t DW if polling techniques or RDY/BUSY are used. 4. Guaranteed by design. TABLE 9. 28C1T MODE SELECTION 1 PARAMETER CE OE WE I/O RES RDY/BUSY Read V IL V IL V IH D OUT V H High-Z Standby V IH X X High-Z X High-Z Write V IL V IH V IL D IN V H High-Z > V OL Deselect V IL V IH V IH High-Z V H High-Z Write Inhibit X X V IH X X V IL X X Data Polling V IL V IL V IH Data Out (I/O7) V H V OL Program X X X High-Z V IL High-Z 1. X = Don t care. FIGURE 1. READ TIMING WAVEFORM Rev Maxwell Technologies

8 1 Megabit (128K x 8-Bit) EEPROM 28C1T FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Rev Maxwell Technologies

9 1 Megabit (128K x 8-Bit) EEPROM 28C1T FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) Rev Maxwell Technologies

10 1 Megabit (128K x 8-Bit) EEPROM 28C1T FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Rev Maxwell Technologies

11 1 Megabit (128K x 8-Bit) EEPROM 28C1T FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) FIGURE 6. DATA POLLING TIMING WAVEFORM Rev Maxwell Technologies

12 1 Megabit (128K x 8-Bit) EEPROM 28C1T FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (ENABLE S/W PROTECTION) FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (DISABLE S/W PROTECTION) EEPROM APPLICATION NOTES This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection. Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A to A6). Loading the first byte of data, the data load window ope 3µs for the second byte. In the same manner each additional byte of data can be loaded within 3µs. In case CE and WE are kept high for 1 µs after data input, EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM Rev Maxwell Technologies

13 1 Megabit (128K x 8-Bit) EEPROM 28C1T WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to V OL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. RES Signal When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when V CC is switched. RES should be high during read and programming because it doesn t provide a latch function. Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functio described below. 1. Data Protection agait Noise of Control Pi (CE, OE, WE) during Operation Rev Maxwell Technologies

14 1 Megabit (128K x 8-Bit) EEPROM 28C1T During readout or standby, noise on the control pi may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 2 or less in programming mode. Be careful not to allow noise of a width of more than 2 on the control pi. 2. Data Protection at V CC on/off When V CC is turned on or off, noise on the control pi generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during V CC on/off by using a CPU reset signal to RES pin. RES should be kept at V SS level when V CC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn t finish correctly in case that RES falls low during programming operation. RES should be kept high for 1 ms after the last data input. t RES t RP t WC 3. Software Data Protection Rev Maxwell Technologies

15 1 Megabit (128K x 8-Bit) EEPROM 28C1T The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode. Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM tur to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written Rev Maxwell Technologies

16 1 Megabit (128K x 8-Bit) EEPROM 28C1T SYMBOL 32 PIN DUAL IN-LINE PACKAGE 1,2 DIMENSION MIN NOM MAX A b b c D E ea ea/2 e.6 BSC.3 BSC.1 BSC L Q S S2.5 N Standard Product Screening Flow MIL-STD-883, Method 21, Cotant Acceleration: For this package type Cotant Acceleration is 3g s. Top and Bottom of the package connected internaly to ground. Note: All dimeio in inches Rev Maxwell Technologies

17 1 Megabit (128K x 8-Bit) EEPROM 28C1T D 28C1T 32-PIN RAD-PAK FLAT PACKAGE SYMBOL DIMENSION MIN NOM MAX A b c D E E1.498 E E e.5bsc L Q S N 32 Top and Bottom of the package connected internaly to ground. Note: All dimeio in inches Rev Maxwell Technologies

18 1 Megabit (128K x 8-Bit) EEPROM 28C1T D 28C1T Rad-Tolerant Flat Package SYMBOL DIMENSION MIN NOM MAX A b c D E E1.498 E E e.5bsc L Q S N 32 Note: All Dimentio in Inches Top and Bottom of the package is connected internally to ground Rev Maxwell Technologies

19 1 Megabit (128K x 8-Bit) EEPROM 28C1T Important Notice: These data sheets are created using the chip manufacturers published specificatio. Maxwell Technologies verifies functionality by testing key parameters either by 1% testing, sample testing or characterization. The specificatio presented within these data sheets represent the latest and most accurate information available to date. However, these specificatio are subject to change without notice and Maxwell Technologies assumes no respoibility for the use of this information. Maxwell Technologies products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim agait Maxwell Technologies must be made within 9 days from the date of shipment from Maxwell Technologies. Maxwell Technologies liability shall be limited to replacement of defective parts Rev Maxwell Technologies

20 1 Megabit (128K x 8-Bit) EEPROM 28C1T Product Ordering Optio Model Number 28C1T XX F X -XX Feature Option Details Access Time 12 = = 15 2 = 2 Screening Flow Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial -55 C, +25 C, +125 C) E = Engineering +25 C) Package 1 D = Dual In-line Package (DIP) 1 F = Flat Pack Radiation Feature 2 RP = RAD-PAK package RT = No Radiation Guarantee Class E and I Only RT1 = 1 Krad (Read/Write) RT2 = 25 Krad (Read/Write); RT4 = 4 Krad (Read/Write) RT6 = 6 Krad (Read/Write) RT4R = 4 Krad (Read); 25 Krad (Write) RT6R = 6 Krad (Read), 25 Krad (Write) Base Product Nomenclature 1 Megabit (128k x 8-bit) EEPROM 1) Standard Product Screening Flow MIL-STD-883, Method 21, Cotant Acceleration :For DIP package type Cotant Acceleration is 3g s. 2.) The device will meet the specified read mode TID level, at the die level, if it is not written to during irradiation. Writing to the device during irradiation will reduce the device s TID tolerance to the specified write mode TID level. Writing to the device before irradiation does not alter the device s read mode TID level Rev Maxwell Technologies

28LV Megabit (128K x 8-Bit) EEPROM. Memory DESCRIPTION: FEATURES: 28LV011A. Logic Diagram

28LV Megabit (128K x 8-Bit) EEPROM. Memory DESCRIPTION: FEATURES: 28LV011A. Logic Diagram 28LV11 1 Megabit (128K x 8-Bit) EEPROM V CC V SS High Voltage Generator I/O I/O7 RDY/Busy RES OE I/O Buffer and Input Latch CE WE RES Control Logic Timing 28LV11A A A6 Y Decoder Y Gating A7 Address Buffer