A RESISTORLESS SWITCHED BANDGAP REFERENCE TOPOLOGY

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1 A RESISTORLESS SWITCHED BANDGAP REFERENCE TOPOLOGY Hamilton Klimach, Moacir F. C. Monteiro Arthur L. T. Costa, Sergio Bampi Graduate Program on Microelectronics Electrical Engineering Department & Informatics Institute Federal University of Rio Grande do Sul (UFRGS) Porto Alegre, Brazil

2 Outline Introduction Traditional CMOS Bandgap topology Device Variability and Mismatch Switched-capacitor BGR SCBGR: Operation, Simulations and Results Monte-Carlo Simulation Results Conclusions 2

3 Introduction Voltage References are fundamental blocks for analog, mixed-signal, RF and even digital SoCs. Most important characteristics: Good thermal stability. Low sensitivity to power-supply variations. Low sensitivity to process fabrication variability effects. Traditional Bandgap topologies fulfills the 2 first requirements. 3

4 Introduction General Principle of the Bandgap Reference 4

5 5 Traditional CMOS Bandgap Topology PTAT current generated with different transistors Thermal counterbalance depends on resistor s ratio Thermal stability depends on resistors precision

6 Device Variability and Mismatch Thermal stability of traditional topologies relies on matching of both resistors and BJTs Resistor precision and matching means large area or expensive CMOS processes Capacitors are the best matched devices in CMOS processes KEY IDEA on this paper: Is it possible to make a BGR using only one BJT and relying on capacitors only rather than resistors matching? 6

7 Switched-capacitor BGR I1 and I2 are approximately equal 7

8 SCBGR - Operation Phase 1: 8

9 SCBGR - Operation Phase 2: 9

10 SCBGR - Operation Phase 3: 10

11 SCBGR - Operation Phase 4: 11

12 SCBGR - Operation C1 V out =V EB (2 I )+ V T ln ( 2 ) C2 12

13 13 SCBGR - Simulations Simulation with Cadence Virtuoso Spectre and IBM 130nm technology PDK Schematic electrical simulations used foundry-supplied parameters for MOSFET model BSIM4. Ideal current sources were replaced by MOS current sources, controlled by a low-power only-mos bias current generator Typical BGR topology (in this paper) uses precise resistors available in the process considered.

14 SCBGR - Results SCBGR and conventional BGR thermal variations 14

15 15 Monte-Carlo Simulation Results Conventional topology (left) vs SCBGR (right) variability histograms of output voltage σσ == mv mv μμ == V V samples samples Almost half σσ == mv mv μμ == V V samples samples

16 Monte-Carlo Simulation Results SCBGR temperature coefficient variability histogram σ σ == ppm/ C ppm/ C μμ == ppm/ C ppm/ C samples samples Low TC 16

17 17 Conclusions A new resistorless bandgap reference topology was proposed. Lower process impact results from using capacitors instead of resistors and only one BJT. Simulations: half the standard-deviation of a typical resistor- based topology, under similar conditions and using precision resistors in the conventional topology. An average TC of 26.7 ppm/ºc enables the circuit to be used without calibration in many IC applications.

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