GHz 6-Bit Digital Attenuator
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1 AMT Rev. 1. January GHz 6-Bit Digital Attenuator Features Frequency Range :.5 to 1.5 GHz 31.5dB Attenuation Range 4.5dB Insertion loss max. 1 max. phase variation 1.5:1 Input\Output VSWR.35dB RMS Error TTL Control Inputs.5µm InGaAs phemt Technology Chip Size : 4. mm x 2.2 mm x.1 mm RF Functional Diagram 2dB 1dB 4dB.5dB 8dB 16dB TTL A1 A2 A3 A4 A5 A6 +5 G -5 RF Typical Applications Radar Military & Space Instrumentation Test and Measurements Instrumentation Applications Description The AMT is a high performance 6-bit digital attenuator MMIC offering an attenuation range of 31.5dB in steps.5db. The attenuator bit values are.5db (LSB), 1,2,4,8 and 16dB (MSB) for a total attenuation of 31.5dB. The attenuator features an excellent attenuation accuracy of +.5dB over all 64 states with a very low phase variation of 1 deg.(max.). The attenuator provides an integral TTL driver, facilitating a 6-bit control. The driver operates on +5/-5V voltages with minimal DC power consumption. The MMIC die is fabricated using a robust.5µm InGaAs phemt technology. Absolute Maximum Ratings (1) Parameter Absolute Maximum Units RF Input Power 2 dbm Positive Supply Voltage +6 V Negative Supply Voltage -6 V Control Voltage -.5 to +5.5 V Operating Temperature -55 to +85 ºC Storage Temperature -65 to +15 ºC 1. Operation beyond these limits may cause permanent damage to the component Phone: Fax: Page 1 of 11
2 AMT Rev. 1. January 28 Electrical Specifications T A = 25 o C, Z o =5 Ω Parameter Value Units Insertion Loss db Attenuation Range db Attenuation step db Attenuation Accuracy (All States) Phase variation over 64 states RMS Error ±.2 + 3% of Attn. Setting Max ±.1 + 2% of Attn. Setting Max ±.1 + 1% of Attn. Setting Max deg <.35 <.25 <.2 Input/Output VSWR :1 DC Bias Voltages - +5, -5 V Control Voltage - / +5 V db db Note: 1. The above mentioned electrical specifications are measured On-Wafer. Phone: Fax: Page 2 of 11
3 AMT Rev. 1. January 28 On Wafer data T A = 25 o C Insertion Loss IL(dB) Normalized Attenuation 35 3 Attenuation(dB) Phone: Fax: Page 3 of 11
4 AMT Rev. 1. January 28 On Wafer data T A = 25 o C 2 Amplitude Error Vs Frequency Attn Error(dB) Amplitude Error Vs States Attn Error(dB) States Phone: Fax: Page 4 of 11
5 AMT Rev. 1. January 28 On Wafer data T A = 25 o C 2 Phase Error Vs Frequency 15 1 Phase Error(degree) Phase Error Vs States 15 1 Phase error(degree) States Phone: Fax: Page 5 of 11
6 AMT Rev. 1. January 28 On Wafer data T A = 25 o C Input Return Loss -5-1 S11(dB) Output Return Loss S22(dB) Phone: Fax: Page 6 of 11
7 AMT Rev. 1. January 28 On Wafer data T A = 25 o C.5 RMS Error.4 RMS(dB) Phone: Fax: Page 7 of 11
8 AMT Rev. 1. January 28 Truth Table State Attenuation TTL Control ( 1 = 3 to 5 V, = to.5 V ) (db) A6 (16) A5 (8) A4(4) A3 (2) A2(1) A1 (.5) Phone: Fax: Page 8 of 11
9 AMT Rev. 1. January 28 Truth Table State Attenuation TTL Control ( 1 = 3 to 5 V, = to.5 V ) (db) A6 (16) A5 (8) A4(4) A3 (2) A2(1) A1 (.5) Phone: Fax: Page 9 of 11
10 AMT Rev. 1. January 28 Mechanical Characteristics 3.74 [.147] 3.89 [.153] 4. [.157] [.87] 1.82 [.72] 1.67 [.66] 1.52 [.6] 1 RF_IN ASTRA RF_OUT [.63] 1.44 [.57] 1.29 [.51] [.41] 1.24 [.49] 1.44 [.57] 1.64 [.64] 1.84 [.72] 2.4 [.8] 2.66 [.15] 2.81 [.111] 2.96 [.117] Units: millimeters (inches) Note: 1. All RF and DC bond pads are 1µm x 1µm 2. Pad no.1: RF Port 1 3. Pad no.2: Optional -5V 4. Pad no.3: Optional +5V 5. Pad no.4: RF Port 2 6. Pad no.5: -5V 7. Pad no.6: +5V 8. Pad nos.7-12: Control pads; Pad 7: MSB(16dB) & Pad 12: LSB (.5dB) Phone: Fax: Page 1 of 11
11 AMT Rev. 1. January 28 Recommended Assembly Diagram 5ohm line RF_IN ASTRA RF_OUT 5ohm line 1 mil gold wire 3 mil Nominal gap +5V -5V 6-Bit DC Control Note: 1. The RF input & output ports are DC coupled 2. No external components are required for this chip Die attach: For Epoxy attachment, use of a two-component conductive epoxy is recommended. An epoxy fillet should be visible around the total die periphery. If Eutectic attachment is preferred, use of fluxless AuSn (8/2) 1-2 mil thick preform solder is recommended. Use of AuGe preform should be strictly avoided. Wire bonding: For DC pad connections use either ball or wedge bonds. For best RF performance, use of 15-2µm length of wedge bonds is advised. Single Ball bonds of 25-3µm though acceptable, may cause a deviation in RF performance. GaAs MMIC devices are susceptible to Electrostatic discharge. Proper precautions should be observed during handling, assembly & testing All information and Specifications are subject to change without prior notice Phone: Fax: Page 11 of 11
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.5 1.5 GHz 6-Bit Digital Attenuator Features Frequency Range :.5 to 1.5 GHz 31.5dB Attenuation Range 5.2dB Insertion loss max..5db RMS attenuation error 23 max. phase variation 1.6:1 Input\Output VSWR
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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v0.0907 HMC37 Typical Applications
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Features Functional Block Diagram Wideband performance High gain High linearity HMC98 replacement Small die size RFIN Vdd1 Vdd Vdd3 RFOUT Description The CMD91 is a wideband GaAs MMIC driver amplifier
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Features Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Rugged, Glass Encapsulated Construction Fully Monolithic Description The
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APN149 Applications Military SatCom Phased-Array Radar Applications Point-to-Point Radio Point-to-Multipoint Communications Terminal Amplifiers Product Description X = 4.4mm Y = 2.28mm Product Features
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Features Functional Block Diagram Ultra low noise performance High linearity Small die size 2 GB 3 Vgg Vdd 4 RFIN RFOUT Description The CMD63 is a high dynamic range GaAs MMIC low noise amplifier ideally
More informationAdvance Datasheet Revision: May 2013
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