GaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049

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1 Data Sheet GaAs phemt MMIC Low Noise Amplifier,. GHz to GHz HMC9 FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure:.7 db High gain: 6 db PdB output power: dbm Supply voltage: 7 V at 7 ma Output IP: 7 dbm Ω matched input/output Die size:. mm.9 mm. mm V DD ACG HMC9 RFOUT/V DD APPLICATIONS Point-to-point radios Point-to-multipoint radios Military and space Test instrumentation RFIN Figure. V GG ACG ACG GENERAL DESCRIPTION The HMC9 is a GaAs MMIC low noise amplifier (LNA) that operates between. GHz and GHz. This LNA provides 6 db of small signal gain, a.7 db noise figure, and an Output IP of 7 dbm, requiring only 7 ma from a 7 V supply. The PdB output power of 6 dbm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q or image rejection mixers. VDD can be applied to Pad with VDD = 7 V or to Pad with VDD = V. Pad requires a bias tee. The HMC9 is also internally matched to Ω for ease of integration into multichip modules (MCMs). All data is taken with the chip in a Ω test fixture connected via. mm ( mil) diameter wire bonds of. mm ( mil) length. Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 96, Norwood, MA 6-96, U.S.A. Tel: Analog Devices, Inc. All rights reserved. Technical Support

2 HMC9 TABLE OF CONTENTS Features... Applications... Functional Block Diagram... General Description... Revision History... Specifications... Absolute Maximum Ratings... ESD Caution... Pin Configuration and Function Descriptions... Interface Schematics... 6 Data Sheet Typical Performance Characteristics...7 Application Circuit... Assembly Diagram... Mounting and Bonding Techniques for Millimeterwave GaAs MMICs... Handling Precautions... Mounting... Wire Bonding... Outline Dimensions... Ordering Guide... REVISION HISTORY 6/7 Rev. A to Rev. B Changed HMC9 Bare Die to HMC9... Throughout Changes to Ordering Guide... This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. / Rev.. to Rev. A Updated Format... Universal Edits to Figure... 7 Updated Outline Dimensions... Changes to Ordering Guide... Rev. B Page of

3 Data Sheet HMC9 SPECIFICATIONS TA = C, VDD = 7 V, IDD = 7 ma. Table. Parameter Min Typ Max Min Typ Max Min Typ Max Units FREQUENCY RANGE. 6 6 GHz GAIN. 6. db Gain Variation over Temperature..6. db/ C NOISE FIGURE db RETURN LOSS Input 7 db Output 7 7 db OUTPUT POWER Output Power for db Compression dbm Saturated (PSAT) 6.. dbm Output Third-Order Intercept (IP) 7. dbm TOTAL SUPPLY CURRENT (IDD) (VDD = 7 V) ma Adjust VGG between V to V to achieve IDD = 7 ma typical. Measurement taken at POUT/tone = dbm. Rev. B Page of

4 HMC9 ABSOLUTE MAXIMUM RATINGS Table. Parameter Rating Drain Bias Voltage (VDD) V Drain Bias Voltage (RFOUT/VDD) 7 V RF Input Power dbm Gate Bias Voltage, VGG V to +. V Channel Temperature 7 C Continuous PDISS (T = C). W (Derate 7. mw/ C Above C) Thermal Resistance (Channel to Die Bottom) 6.7 C/W Storage Temperature 6 C to + C Operating Temperature C to + C Data Sheet Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION Rev. B Page of

5 Data Sheet HMC9 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS V DD ACG RFOUT/V DD HMC9 TOP VIEW (Not to Scale) RFIN V GG ACG ACG Figure. Pad Configuration Table. Pad Function Descriptions Pad No. Function Description RFIN RF Input. This pad is dc-coupled and matched to Ω. VDD Power Supply Voltage for the Amplifier. External bypass capacitors are required. ACG Low Frequency Termination. Attach an external bypass capacitor (see Figure ). RFOUT/VDD RF Output/Alternate Power Supply Voltage for the Amplifier. An external bias tee is required when using Pin as an alternative VDD. This pad is dc-coupled and matched to Ω., 6 ACG, ACG Low Frequency Terminations. Attach external bypass capacitors (see Figure ). 7 VGG Gate Control for Amplifier. Adjust to achieve IDD = 7 ma. Die Bottom GND Ground. Die bottom must be connected to RF/dc ground. Rev. B Page of

6 HMC9 Data Sheet INTERFACE SCHEMATICS V DD RFIN ACG 96- ACG 96-9 Figure. VDD Interface Figure 7. ACG and ACG Interface GND 96-6 RFOUT/V DD 96- Figure. GND Interface Figure. RFOUT/VDD Interface RFIN ACG ACG RFOUT/V DD Figure. RFIN Interface Figure 9. ACG Interface V GG 96- Figure 6. VGG Interface Rev. B Page 6 of

7 Data Sheet HMC9 TYPICAL PERFORMANCE CHARACTERISTICS Data taken with VDD applied to Pad, with VDD = 7 V. S S S RESPONSE (db) RETURN LOSS (db) Figure. Broadband, Gain, and Return Loss Figure. Output Return Loss vs. Temperature GAIN (db) 6 NOISE FIGURE (db) Figure. Gain vs. Temperature Figure. Noise Figure vs. Temperature 6V 7V V RETURN LOSS (db) NOISE FIGURE (db) Figure. Input Return Loss vs. Temperature Figure. Noise Figure vs. VDD Rev. B Page 7 of

8 HMC9 Data Sheet 6mA 7mA ma NOISE FIGURE (db) P SAT (dbm) Figure 6. Noise Figure vs. IDD Figure 9. PSAT vs. Temperature 7 6V 7V V IP (dbm) PdB (dbm) Figure 7. Output IP vs. Temperature Figure. PdB vs. VDD 7 6V 7V V PdB (dbm) P SAT (dbm) Figure. PdB vs. Temperature Figure. PSAT vs. VDD Rev. B Page of

9 Data Sheet HMC9 ISOLATION (db) P OUT (dbm), GAIN (db), PAE (%) 6 GAIN P OUT PAE 6 6 Figure. Reverse Isolation vs. Temperature INPUT POWER (dbm) Figure. Power Compression at GHz 96-7 P OUT (dbm), GAIN (db), PAE (%) 6 GAIN P OUT PAE INPUT POWER (dbm) Figure. Power Compression at GHz 96- NOISE FIGURE (db), GAIN (db), P SAT (dbm) 9 6 NOISE FIGURE GAIN P SAT V DD (V) Figure 6. Noise Figure, Gain, and Power (PSAT) vs. Supply Voltage (VDD) at GHz 96- P OUT (dbm), GAIN (db), PAE (%) 6 GAIN P OUT PAE INPUT POWER (dbm) Figure. Power Compression at GHz 96-6 NOISE FIGURE (db), GAIN (db), P SAT (dbm) 9 6 NOISE FIGURE GAIN P SAT 6 7 I DD (ma) Figure 7. Noise Figure, Gain, and Power vs. Supply Current at GHz 96-9 Rev. B Page 9 of

10 HMC9 Data Sheet Data taken with VDD = V applied to the bias tee at Pad. RESPONSE (db) S S S 6 Figure. Broadband Gain and Return Loss 96- IP (dbm) 6 6 Figure. Output IP vs. Temperature GAIN (db) PdB (dbm) Figure 9. Gain vs. Temperature Figure. PdB vs. Temperature 6 NOISE FIGURE (db) P SAT (dbm) Figure. Noise Figure vs. Temperature Figure. PSAT vs. Temperature Rev. B Page of

11 Data Sheet HMC9 APPLICATION CIRCUIT.µF OPTION V DD.7µF +.µf pf ACG OPTION V DD RFOUT ACG RFIN 7 6 ACG.µF V GG.7µF +.µf pf +.7µF 96-6 Figure. Typical Applications Circuit ASSEMBLY DIAGRAM +.7µF TO V DD SUPPLY ALL BOND WIRES ARE mil DIAMETER.µF.µF pf mil NOMINAL GAP Ω TRANSMISSION LINE TO V GG SUPPLY pf.µf.µf + +.7µF Figure. Assembly Diagram.7µF 96-6 Rev. B Page of

12 HMC9 Data Sheet MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Attach the die directly to the ground plane eutectically or with conductive epoxy. To bring RF to and from the chip, use Ω microstrip transmission lines on.7 mm ( mil) thick alumina thin film substrates (see Figure 6). If. mm ( mil) thick alumina thin film substrates are required, raise the die by. mm (6 mil) to ensure that the surface of the die is coplanar with the surface of the substrate. One method to accomplish this coplanarity is to attach the. mm ( mil) thick die to a. mm (6 mil) thick molybdenum heat spreader (molytab), and then attach the unit to the ground plane (Figure 7)..mm (.") THICK GaAs MMIC.76mm (.") WIRE BOND RF GROUND PLANE.7mm (.") THICK ALUMINA THIN FILM SUBSTRATE Figure 6. RF Lines.mm (.") THICK GaAs MMIC.76mm (.") WIRE BOND RF GROUND PLANE.mm (.") THICK MOLY TAB.mm (. ) THICK ALUMINA THIN FILM SUBSTRATE Figure 7. Die Attachment Using Molybdenum Heat Spreader To minimize bond wire length, place microstrip substrates as close to the die as possible. Typical die to substrate spacing is.76 mm to. mm ( mil to 6 mil) HANDLING PRECAUTIONS To avoid permanent damage, adhere to the following precautions. Storage All bare die ship in either waffle or gel-based ESD protective containers, sealed in an ESD protective bag. After opening the sealed ESD protective bag, all die must be stored in a dry nitrogen environment. Cleanliness Handle the chips in a clean environment. Never use liquid cleaning systems to clean the chip. Static Sensitivity Follow ESD precautions to protect against ESD strikes. Transients Suppress instrument and bias supply transients while bias is applied. To minimize inductive pickup, use shielded signal and bias cables. General Handling Handle the chip on the edges only using a vacuum collet or with a sharp pair of bent tweezers. Because the surface of the chip has fragile air bridges, never touch the surface of the chip with a vacuum collet, tweezers, or fingers. MOUNTING The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface must be clean and flat. Eutectic Die Attach It is best to use an / gold tin preform with a work surface temperature of C and a tool temperature of 6 C. When hot 9/ nitrogen/hydrogen gas is applied, maintain tool tip temperature at 9 C. Do not expose the chip to a temperature greater than C for more than sec. No more than sec of scrubbing should be required for attachment. Epoxy Die Attach Apply a minimum amount of epoxy to the mounting surface so that upon placing it into position, a thin epoxy fillet is observed around the perimeter of the chip. Cure epoxy per the schedule provided by the manufacturer. Rev. B Page of

13 Data Sheet HMC9 WIRE BONDING RF bonds made with two mil wires are recommended using thermosonic bonding with a force of grams (g) to 6 g. DC bonds of. in. (. mm) diameter, thermosonically bonded, are recommended. Make ball bonds with a force of g to g and wedge bonds at g to g. Make all bonds with a nominal stage temperature of C. To achieve reliable bonds, apply a minimum amount of ultrasonic energy. Keep all bonds as short as possible, less than mil (. mm). Rev. B Page of

14 HMC9 Data Sheet OUTLINE DIMENSIONS NOTES:. DIE THICKNESS IS... TYPICAL BOND PAD IS. SQUARE.. BOND PAD METALIZATION: GOLD.. BACK SIDE METALIZATION: GOLD.. BACK SIDE METAL IS GROUND. 6. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE IS ± A Figure. 7-Pad Bare Die [CHIP] (C-7-) Dimensions shown in inches ORDERING GUIDE Model Temperature Range Package Description Package Option HMC9 C to + C 7-Pad Bare Die [CHIP] C-7- HMC9-SX C to + C 7-Pad Bare Die [CHIP] C-7- The HMC9-SX is a sample order of two devices. This is a gel pack option, contact Analog Devices, Inc., for additional packaging options. 7 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D96--6/7(B) Rev. B Page of

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