Agilent 1GC GHz Integrated Diode Limiter

Transcription

1 Agilent 1GC GHz Integrated Diode Limiter TC231 Data Sheet Features Two Independent Limiters for Single ended or Differential Signals Can be Biased for Adjustable Limit Level and Signal Detection Minimum Group Delay Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: µm ( mils) ±1 µm (±.4 mils) 127 ± 15 µm (5. ±.6 mils) 8 8 µm ( mils) DC 8 16 µm ( mils) RF Description The TC231 is a 65 GHz integrated diode limiter that can be used to protect sensitive RF circuits from excess RF power, DC transients, and ESD. Two limiters are provided on chip to enable single ended or differential use. The TC231 can be used as an unbiased 1 or 18 dbm passive limiter; it also provides adjustable limiting and peak power detection capabilities. The TC231 has been designed for minimal insertion loss. Group delay characteristics have been optimized to allow use in millimeter wave analog and gigabit digital designs. Absolute Maximum Ratings [1], [2] Symbol Parameters/Conditions Min. Max. Units P in Continuous RF Power A & C Grounded +17 dbm DGND Grounded +19 dbm I bias Continuous Forward Current into A 1, A 2, C 1, C 2, DGND ma V bias Voltage at A 1, A 2, C 1, C 2, DGND V V rev Reverse Bias Voltage on Each Diode 8 V I fwd Forward Bias Current on Each Diode 36 ma V in Voltage at IN 1, IN 2, OUT 1, OUT V I in Current into IN 1, IN 2, OUT 1, OUT ma T bs Maximum Backside Temperature 85 C T j Diode Junction Temperature 17 C T max Maximum Assembly Temperature [3] 3 C T stg Storage Temperature C Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. If you need to operate higher, please contact WPTC Marketing. 2. Calculated using backside (ambient) temperature of 85 C, unless otherwise noted. 3. Sixty second maximum. 1

2 DC Specifications/Physical Properties [1] Symbol Parameters/Conditions Min. Typ. Max. Units Vfwd_A, Vfwd_C Limiting Diode Forward ma V Vfwd_D 2 Diode Bias Stack Forward ma V Rs_A, Rs_C Limiting Diode Series 15 ma Including 2 ohm Resistor 1. Measured on wafer with T chuck = 25 C, unless otherwise noted Ω I_A, I_C Limiting Diode Reverse Leakage 1V.1 1 ua RS_Series Through Series Resistance 1.2 Ω Notes: RF Specifications [1] Symbol Parameters/Conditions Min. Typ. Max. Units 1 GHz 24 2 S 11,S 22 Reflection 3 GHz GHz 12 8 db 65 GHz 1 1 GHz.4.2 S 21,S 12 Through Loss 3 GHz GHz db 65 GHz GHz ±.5 τ d Group Delay Flatness 5 GHz ±.75 ps 65 GHz ±1. A&C Grounded 1 P 1dB 1 db Gain Compression DGND Grounded 18 dbm A&C Biased Voltage Variable SHI Second Harmonic Intercept ƒ = 5 GHz, A & C or DGND Grounded 7 dbm THI Third Harmonic Intercept ƒ = 5 GHz, A&C or DGND Grounded 32 dbm TOI Third Order Intercept ƒ 1 = 5 GHz, ƒ 2 = 5.25 GHz, A&C or DGND Grounded 32 dbm Notes: 1. Measured on wafer with T chuck = 25 C. Numbers shown are over 5 GHz band unless otherwise specified. ESD Specifications [1] Symbol Parameters/Conditions Min. Typ. Max. Units ESD ESD No Damage A&C Grounded 24 V DGND Grounded 28 V Notes: 1. Using Human Body Model as ESD generator. Circuit equivalent is 1 pf, 15Ω. 2 TC231/rev.3.

3 Applications The TC231 can be used as a protection circuit for ESD and DC transients, as a Reverse Power Protection (RPP) device, or as an RF limiter with optional power detection. The different modes of use require different attachments. These are described under Operation. Biasing None required for traditional operation. For adjustable limiting, the bias voltage will set the limiting value as described under Operation. Operation The TC231 has three primary modes of operation. 1 dbm and 18 dbm limiting can be done with no active bias required. See Figures 1(a) & 1(b). Both of these uses will provide ESD protection at the limiting value. For adjustable limiting and detection, the bias should be applied as shown in Figure 1(c). Adjustable limiting is achieved by setting the A pin to a DC voltage ~.7 volts higher than the desired minimum voltage, and the C pin to a DC voltage ~.7 volt lower than the desired maximum voltage. If the voltage is not forced, the capacitor will function as a peak detector. As an ESD protection device, the TC231 can protect ESD sensitive components. The degree of protection depends on the protected components characteristics. ESD damage level for the TC231 by itself is around 24V using the human body model. Assembly Techniques See Figure 11 for bond pad locations. Epoxy die attach using a conductive epoxy and solder die attach using a fluxless gold tin solder preform are both suitable assembly methods. Gold wire mesh bonds (5 line/inch or equivalent) should be used at the RF input and output ports. These bonds must be kept as short as possible to minimize parasitic inductance. DC bias may be supplied through conventional.7 mil gold wire bonds. In both cases, thermosonic wedge bonding is recommended. Diodes are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling and assembly. ESD precautions, handling considerations, and die attach and bonding methods are critical factors in successful diode performance and reliability. Please refer to Agilent Application Note #54, "GaAs MMIC ESD, Die Attach and Bonding Guidelines" for additional information on these subjects. Not Biased Not Biased Biased DGND1 A1 C1 DGND2 DGND1 A1 C1 DGND2 DGND1 A1 C1 DGND2 IN1 OUT1 IN1 OUT1 IN1 OUT1 IN2 OUT2 IN2 OUT2 IN2 OUT2 DGND3 A2 C2 DGND4 DGND3 A2 C2 DGND4 DGND3 A2 C2 DGND4 1 dbm Limiting 18 dbm Limiting Adjustable Limiting & Detection (a) (b) (c) Figure 1. TC231 Functional Topologies TC231/rev.3. 3

4 . S21 (db) No mesh 3 mil mesh Figure 2. TC231 S 21 Note: Both no mesh (simulated) and 3 mil mesh (measured) input and output connections shown. Plots for A and C of and are included. S11 (db) No mesh 3 mil mesh Figure 3. TC231 S No mesh S22 (db) mil mesh Figure 4. TC231 S Group Delay (ps) mil mesh No mesh Figure 5. TC231 Group Delay 4 TC231/rev.3.

5 Pinc(-1dB) A&C -2/+2V DGND grounded A&C -1/+1V A&C /V Figure 6. TC231 Pinc( 1dB) vs. Frequency Gain (db) /V -1/+1V -2/+2V Pinc (dbm) Figure 7. TC231 Gain vs. Pinc, A&C Biased 1 GHz 5 GHz 1 GHz 15 GHz 2 GHz 25 GHz Gain (db) A&C grounded DGND grounded Pinc (dbm ) Figure 8. TC231 Gain vs. Pinc, Not Biased 1 GHz 5 GHz 1 GHz 15 GHz 2 GHz 25 GHz TC231/rev.3. 5

6 Second Harmonic Output (dbc) A&C Grounded DGND Grounded Input Power (dbm) Figure 9. Typical Second Harmonic ƒ = 5 GHz -2 Third Harmonic Output (dbc) Input Power (dbm) Figure 1. Typical Third Harmonic ƒ = 5 GHz IM3 (dbc) Input 5GHz (dbm) Figure 11. Typical Third Order ƒ 1 = 5 GHz, ƒ 2 = 5.25 GHz 6 TC231/rev.3.

7 Figure 12. TC231 Sample Bonding & Assembly Options TC231/rev.3. 7

8 1.E+ 1.E-1 I (A) 1.E-2 1.E-3 1.E-4 24 deg C 7 deg C 1.E-5 1.E V (V) Figure 13. TC231 Limiter I V, A & C Pads Grounded Tbackside 24 & 7 Figure 14. Bond Pay Layout This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. Customers considering the use of this, or other WPTC GaAs ICs, for their design should obtain the current production specifications from WPTC Marketing. In this data sheet the term typical refers to the 5th percentile performance. For additional information contact WPTC Marketing at TC231/rev.3.