Keysight TC950 DC 75 GHz SPDT GaAs MMIC Switch

Transcription

1 Keysight TC950 DC 75 GHz SPDT GaAs MMIC Switch 1GG Data Sheet Features Frequency Range: DC-75 GHz Insertion Loss: 2.6 db 50 GHz Isolation: 29 db 50 GHz Return Loss: >10 db (Both Input & Selected Output) P -1dB : +15 dbm Harmonics: <-50 dbc Settling Time: < ns (0.1 db)

2 02 Keysight TC950 1GG DC-75 GHz SPDT GaAs MMIC Switch - Data Sheet Description The TC950 is a GaAs monolithic microwave integrated circuit (MMIC) switch designed for low insertion loss and high isolation from DC to 75 GHz. It is intended for use as a general-purpose, single-pole, double-throw (SPDT)switch. One series and two shunt phemts per throw typically provide 2.6 db insertion loss and 29 db isolation at 50 GHz. This IC is fabricated in MWTC s advanced 0.12-μm gatelength GaAs phemt process. Chip Size: 630 x 930 μm (24.8 x 36.6 mils) Chip Size Tolerance: ± 10 μm (± 0.4 mils) Chip Thickness: 50 ± 15 μm (2.0 ± 0.6 mils) Pad Dimensions: 80 x 80 μm (3.2 x 3.2 mils)

3 03 Keysight TC950 1GG DC-75 GHz SPDT GaAs MMIC Switch - Data Sheet Absolute Maximum Ratings 1 Symbol Parameters/Conditions Min. Max. Units Vsel Select Voltages 1 & V P in RF Input Power dbm T ch Maximum Channel Temperature +17 C T bs 2 Die Backside Temperature C T stg Storage Temperature C T max Maximum Assembly Temperature (for 60 seconds maximum) +300 C Notes 1. 1.Operation in excess of any one of these conditions may result in permanendamage to this device. 2. MTTF>1x10 6 T bs =85 C. Operation in excess of maximum backside temperature (T bs ) will degrade MTTF. DC Specifications/Physical Properties 1 Symbol Parameters/Conditions Min. Typ. Max. Units I sel Leakage +3V µa I sel Leakage -3V 20 4 µa Øch-s Thermal Resistance (T substrate = 25 C) 1. Z 0 = 50Ω, T A =25 C RF Specifications 1 Symbol Parameters/Conditions Freq. Min. Typ. Max. Units BW LO Bandwidth DC 75 GHz IL ISO ISO RL in RL out-on Insertion Loss, RF in to RF out (ON throw) Isolation, RF in to RF out (OFF throw) Isolation, RF out to RF out (OFF throw) Input Return Loss, 50 GHz Output Return Loss (ON throw) 1 GHz 1.75 db 50 GHz db 67 GHz 3.4 db 75 GHz 4.2 db 1 GHz 65 db 50 GHz 29 db 67 GHz 27 db 75 GHz 26 db 1 GHz 62 db 50 GHz 31 db 67 GHz 29 db 75 GHz 28 db 50 GHz 16 db 75 GHz 10 db 50 GHz 16 db 75 GHz 16 db RL out-off Output Return Loss (OFF throw) 1 GHz 3.5 db P -1dB Ouput Power at 1 db Gain Compression 18 GHz +15 dbm H 2 2 nd Harmonic, Pout +10 dbm (Fund = 100 MHz, 2 GHz, and 12 GHz) 50 GHz 50 dbc H 3 3 rd HarmonicPout +10 dbm (Fund = 100 MHz, 2 GHz, and 12 GHz) 50 GHz 50 dbc TOI 3 rd Order Intermodulation Intercept, RFin1 = RF in2 +10 dbm, 100 MHz (Δf = 1 MHz), 2 GHz (Δf = 100 MHz), 12 GHz (Δf = 100 MHz) 50 GHz +31 dbm 1. Z 0 = 50Ω, ac coupled, T A =25 C. 2. These RF specifications can be achieved when the device is properly biased and heat sunk. Specifications are based on performance attained on-chip with a wafer probe system.

4 04 Keysight TC950 1GG DC-75 GHz SPDT GaAs MMIC Switch - Data Sheet Applications The TC950 is a general purpose SPDT switch IC suitable for microwave and millimeter wave switching applications. The TC950 can be used in instrumentation, communications, radar, ECM, EW, fiber optic, and many other systems requiring SPDT switching. It can be used for pulse modulation, port isolation, transfer switching, highspeed switching, replacement of mechanical switches, and many other applications. Operation The RF input and output ports may be DC or AC coupled. If DC coupled, the voltages of the input and output ports must be within ±0.25 Volts of ground for guaranteed switch performance. Maximum OFF state isolation is obtained with unequal select voltages. The Short and Open states both provide some degree of isolation, but not over the entire bandwidth of the device. In addition, the Open state is not recommended because of potentially destructive overvoltage stress caused by high impedance values at the input and output ports.. Figure 1. 1GG Schematic Figure 2. 1GG Biasing Diagram Recommended Operating Conditions State V SEL1 V SEL2 RF OUT1 RF OUT2 RF OUT1 ON +3V 3V ON OFF RF OUT2 ON 3V +3V OFF ON Short +3V +3V ON ON Open 3V 3V OFF OFF

5 05 Keysight TC950 1GG DC-75 GHz SPDT GaAs MMIC Switch - Data Sheet Assembly Techniques Epoxy die attach using a conductive epoxy or solder die attach using a fluxless gold tin solder preform are both suitable assembly methods. The IC must be attached to an electrically conductive surface that forms DC and RF ground for the curcuit. To maintain adequate impedance matching properties at the RF input and output ports, 500-line/inch gold wire mesh bonds (or equivalent) should be used. These bonds should be kept as short as possible to minimize parasitic inductance. DC bias may be supplied through conventional 0.7 mil gold wire bonds. In both cases, thermosonic wedge bonding is recommended. The top and bottom metallization is gold. GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling and assembly. MMIC ESD precautions, handling considerations, and die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability. Keysight Technologies, Inc. Application Note #54 ( EN), GaAs MMIC ESD, Die Attach and Bonding Guidelines provides basic information on these subjects. Figure 3. 1GG Chip Bias/RF Bond Pad Locations Figure 4. 1GG Chip Assembly diagram

6 06 Keysight TC950 1GG DC-75 GHz SPDT GaAs MMIC Switch - Data Sheet S-Parameters 1, RF IN to RF OUT1 (T A =25 C, V SEL1 =+3V, V SEL2 =-3V, Z o =50 ohms) RF OUT1 : ON RF OUT2 : OFF Freq. (GHz) S 11 S 12 S 21 S 22 db Mag Ang db Mag Ang db Mag db Mag Ang S-parameters measured on-wafer with a wafer probe system at T A =25 C

7 07 Keysight TC950 1GG DC-75 GHz SPDT GaAs MMIC Switch - Data Sheet S-Parameters 1, RF IN to RF OUT1 (T A =25 C, V SEL1 =+3V, V SEL2 =-3V, Z o =50 ohms) RF OUT1 : OFF RF OUT2 : ON Freq. (GHz) S 11 S 12 S 21 S 22 db Mag Ang db Mag Ang db Mag db Mag Ang S-parameters measured on-wafer with a wafer probe system at T A =25 C

8 08 Keysight TC950 1GG DC-75 GHz SPDT GaAs MMIC Switch - Data Sheet S-Parameters 1, RF IN to RF OUT1 (T A =25 C, V SEL1 =+3V, V SEL2 =-3V, Z o =50 ohms) RF OUT1 : ON RF OUT2 : ON Freq. (GHz) S 11 S 12 S 21 S 22 db Mag Ang db Mag Ang db Mag db Mag Ang S-parameters measured on-wafer with a wafer probe system at T A =25 C

9 09 Keysight TC950 1GG DC-75 GHz SPDT GaAs MMIC Switch - Data Sheet S-Parameters 1, RF IN to RF OUT1 (T A =25 C, V SEL1 =+3V, V SEL2 =-3V, Z o =50 ohms) RF OUT1 : OFF RF OUT2 : OFF Freq. (GHz) S 11 S 12 S 21 S 22 db Mag Ang db Mag Ang db Mag db Mag Ang S-parameters measured on-wafer with a wafer probe system at T A =25 C

10 10 Keysight TC950 1GG DC-75 GHz SPDT GaAs MMIC Switch - Data Sheet Figure 5. Insertion Loss vs. Frequency 1 Figure 6. Isolation vs. Frequency 1 Figure 7. Return Loss vs. Frequency 1 Figure 8. Compression vs. Input Power 1 Figure 9. Harmonics vs. Input 100 MHz Input 1 Figure 10. Harmonics vs. Input 2 GHz Input 1 1. All data was measured on-wafer with a wafer probe system at T A =25 C.

11 11 Keysight TC950 1GG DC-75 GHz SPDT GaAs MMIC Switch - Data Sheet Figure 11. Harmonics vs. Input 12 GHz Input 1 Figure 12. Intermod Products vs. Input 100 MHz Input 1 Figure 13. Intermod Products vs. Input 2 GHz Input 1 Figure 14. Intermod Products vs. Input 12 GHz Input 1 This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. 1. All data was measured on-wafer with a wafer probe system at T A =25 C. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact Keysight HFTC Marketing at

12 12 Keysight TC950 1GG DC-75 GHz SPDT GaAs MMIC Switch - Data Sheet mykeysight A personalized view into the information most relevant to you. For more information on Keysight Technologies products, applications or services, please contact your local Keysight office. The complete list is available at: Americas Canada (877) Brazil Mexico United States (800) Asia Pacific Australia China Hong Kong India Japan 0120 (421) 345 Korea Malaysia Singapore Taiwan Other AP Countries (65) Europe & Middle East Austria Belgium Finland France Germany Ireland Israel Italy Luxembourg Netherlands Russia Spain Sweden Switzerland Opt. 1 (DE) Opt. 2 (FR) Opt. 3 (IT) United Kingdom For other unlisted countries: (BP ) This information is subject to change without notice. Keysight Technologies, Published in USA, July 31, EN