Features. Applications

Transcription

1 AMMC GHz Low Noise Amplifier Data Sheet Chip Size: 7 x 8 µm (67 x 3.5 mils) Chip Size Tolerance: ± µm (±.4 mils) Chip Thickness: ± µm (4 ±.4 mils) Pad Dimensions: x µm (4 ±.4 mils) Description Avago Technologies AMMC622 is a high gain, lownoise amplifier that operates from 6 GHz to 2 GHz. This LNA provides a wideband solution for system design since it covers several bands, thus, reduces part inventory. The device has input / output match to 5 Ohm, is unconditionally stable and can be used as either primary or subsequential low noise gain stage. By eliminating the complex tuning and assembly processes typically required by hybrid (discrete FET) amplifiers, the AMMC622 is a costeffective alternative in the 6 2 GHz communications receivers. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related performance variations and costs. It is fabricated in a PHEMT process to provide exceptional noise and gain performance. For improved reliability and moisture protection, the die is passivated at the active areas. Features Wide frequency range: 6 2 GHz High gain: 23 db Low 5 Ω Noise Figure: 2. db 5 Ω Input and Output Match Single 3 Supply Bias Applications Microwave Radio systems Satellite SAT, DBS Up/Down Link LMDS & PtPt mmw Long Haul Broadband Wireless Access (including 82.6 and 82.2 WiMax) WLL and MMDS loops Commercial grade military AMMC622 Absolute Maximum Ratings [] Symbol Parameters/Conditions Units Min. Max. d Positive Drain oltage 7 g Gate Supply oltage NA I d Drain Current ma P in CW Input Power dbm 5 T ch Operating Channel Temp. C +5 T stg Storage Case Temp. C T max Maximum Assembly Temp (6 sec max) C +3 Note:. Operation in excess of any one of these conditions may result in permanent damage to this device Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices

2 AMMC622 DC Specifications/Physical Properties [] Symbol Parameters and Test Conditions Units Min. Typ. Max. I d g Drain Supply Current (under any RF power drive and temperature) ( d =3. ) Gate Supply Operating oltage (I d(q) = 8 (ma)) q chb Thermal Resistance [2] (Backside temperature, T b = 25 C) ma 55 7 NA C/W 25 Notes:. Ambient operational temperature T A =25 C unless otherwise noted. 2. Channeltobackside Thermal Resistance (q chb ) = 26 C/W at T channel (T c ) = 34 C as measured using infrared microscopy. Thermal Resistance at backside temperature (T b ) = 25 C calculated from measured data. AMMC622 RF Specifications [3, 4, 5] (T A = 25 C, d =3., I d(q)= 55 ma, Z o =5 Ω) Symbol Parameters and Test Conditions Units Minimum Typical Maximum Sigma Gain Smallsignal Gain [6] db NF Noise Figure into 5 W db 7 GHz = 2. 6 GHz =.8 62 GHz = 2. P db Output Power at db Gain Compression OIP3 Third Order Intercept Point; Df=MHz; Pin=35dBm 8 GHz = GHz = GHz = 2.4 Notes: 3. Small/Large signal data measured in wafer form T A = 25 C. 4. % onwafer RF test is done at frequency = 8, 2, and 8 GHz. 5. Specifications are derived from measurements in a 5 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching. 6. As derived from measured sparameters. dbm dbm +9.2 RLin Input Return Loss [6] db 2.3 RLout Output Return Loss [6] db 6.68 Isol Reverse Isolation [6] db 45.5 LSL USL USL Gain at 2 GHz Noise Figure at 2 GHz Return Loss at 2 GHz Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 5 part sampled over several production lots.

3 AMMC622 Typical Performances (T A = 25 C, d =3., I D = 55 ma, Z in = Z out = 5 Ω unless otherwise stated) NOTE: These measurements are in a 5 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching.figure. Typical Gain Gain (db) Isolation (db) Input Return Loss(dB) 8 8 Figure. Typical Gain 8 8 Figure 2. Typical Isolation 8 8 Figure 3 Typical Input Return Loss.. Output Return Loss (db) Noise Figure [db].... OPdB (dbm) OIP (dbm) 8 8 Figure 4. Typical Output Return Loss Frequency [GHz] Figure 5. Typical Noise Figure into a 5 W load. 8 8 Frequency [GHz] Figure 6. Typical Output P db and 3 rd Order Intercept Pt. S (db) S (db) S (db) Figure 7. Typical Gain (s2) over temperature Figure 8. Typical Isolation (s2) over temperature Figure 9. Typical Input Return Loss (s) over temperature

4 AMMC622 Typical Performances (T A = 25 C, d =3., I D = 55 ma, Z in = Z out = 5Ω unless otherwise stated) NOTE: These measurements are in a 5 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching S (db) NF (db) Idd (ma) Figure. Typical Output Return Loss over Temperature 8 8 Figure. Typical Noise Figure over Temperature.. dd () Figure 2. Typical Total Idd over Temperature S (db) S (db) S (db) Figure 3. Typical Gain over dd (supply voltage.) Figure 4. Typical Isolation over dd (supply voltage) Figure 5. Typical Input Return Loss over dd (supply voltage).. S (db) NF (db)... OPdB (dbm) Figure 6. Typical Output Return Loss over dd (supply voltage) Figure 7. Typical Noise Figure over dd (supply voltage.) 8 8 Figure 8. Typical OP db over dd (supply voltage.)

5 AMMC622 Typical Scattering Parameters [] (Tc=25 C, D = D2 = 3, Z in = Z out = 5 Ω) Freq GHz S S2 S2 S22 db Mag Phase db Mag Phase db Mag Phase db Mag Phase Note: Data obtained from onwafer measurements

6 AMMC622: Typical Scattering Parameters [] (Tc=25 C, D = D2 = 5, Z in = Z out = 5 Ω) S S2 S2 S22 Freq db mag phase db mag phase db mag phase db mag phase Note: Data obtained from onwafer measurements

7 Biasing and Operation The AMMC622 is normally biased with a single positive drain supply connected to both D and D2 bond pads through the 2 bypass capacitors as shown in Figure 2. The recommended supply voltage is 3. It is important to have 2 separate pf bypass capacitors, and these two capacitors should be placed as close to the die as possible. The AMMC622 does not require a negative gate voltage to bias any of the three stages. No ground wires are needed because all ground connections are made with plated throughholes to the backside of the device. Refer the Absolute Maximum Ratings table for allowed DC and thermal conditions Assembly Techniques The backside of the MMIC chip is RF ground. For microstrip applications the chip should be attached directly to the ground plane (e.g. circuit carrier or heatsink) using electrically conductive epoxy [] For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it. This can be accomplished by mounting a gold plate metal shim (same length and width as the MMIC) under the chip which is of correct thickness to make the chip and adjacent circuit the same height. The amount of epoxy used for the chip and/or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. The ground plan should be free of any residue that may jeopardize electrical or mechanical attachment. The location of the RF bond pads is shown in Figure 2. Note that all the RF input and output ports are in a Ground SignalGround configuration. RF connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. A single bond wire is normally sufficient for signal connections, however double bonding with.7 mil gold wire or use of gold mesh [2] is recommended for best performance, especially near the high end of the frequency band. Thermosonic wedge bonding is preferred method for wire attachment to the bond pads. Gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams and a ultrasonic power of roughly 55 db for a duration of 76 ± 8 ms. The guided wedge at an untrasonic power level of 64 db can be used for.7 mil wire. The recommended wire bond stage temperature is 5 ± 2 C. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. The chip is um thick and should be handled with care. This MMIC has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up the die with a vacuum on die center). This MMIC is also static sensitive and ESD precautions should be taken. Notes: [] Ablebond 84 LM silver epoxy is recommended. [2] BuckbeeMears Corporation, St. Paul, MN, cc Out In Figure 9. AMMC622 Schematic

8 D D RFin 33 RFout Figure 2. AMMC622 Bonding pad locations To DD DC supply pf Capacitors D D2 RF INPUT AMMC622 RF OUTPUT Gold Plated Shim (Optional) Figure 2. AMMC622 Assembly diagram Ordering Information: AMMC622W = devices per tray AMMC622W5 = 5 devices per tray For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright 26 Avago Technologies Pte. All rights reserved EN April, 26