S-band T/R Control Module

Transcription

1 S-band T/R Control Module Features Dual path, Transmit/Receive Operation 6-Bit Digital Attenuator, 6-Bit Digital Phase shifter and high Isolation SPDT Switch Low Insertion loss ~ 9.5dB Switch Isolation ~6dB 1.4:1 I/O VSWR On-chip TTL integrated control Inputs Hermetically sealed Module 5Ω Input and Output Impedance.5μm InGaAs phemt Technology High Switching Speed 23mm x19mm x 4.7mm compact package Functional Diagram Typical Applications RADAR Systems Description The AMT-PH332AM1 is a 3-port, dual path S-band transmit/receive control MMIC module. The module incorporates a 6-bit Phase Shifter, 6-Bit Attenuator and a high isolation SPDT switch. The on-chip TTL compatible drivers minimize the required inputs. The module is compact, lightweight and hermetically sealed for reliable operation. The hermetically sealed package is compatible with conventional assembly procedures. The RF ports are DC coupled and require external coupling capacitors for reliable operation. This product is fully matched to 5ohms at all the three RF ports. The constituent MMICs are fabricated using a highly reliable and high performance InGaAs.5μm phemt Technology. The MMICs are fully protected with Silicon Nitride passivation to obtain highest level of reliability. Absolute Maximum Ratings 1 Parameter Absolute Maximum Units RF input Power ( common Port) 25 dbm RF input Power ( switch ports) 25 dbm Positive supply Voltage +7 V Negative supply voltage -7 V Control voltage +6 V Storage Temperature -55 to +12 C 1. Operation beyond these limits may cause permanent damage to the component Page 1 of 16

2 Electrical T A = 25 o C, Z o =5 Ω Parameter Typical Units Bandwidth GHz Attenuation Range(6 bits,64 states) to 31.5 db.5db Bit, Relative gain, LSB -.5 db 1dB Bit, Relative gain -1. db 2dB Bit, Relative gain -2. db 4dBBit, Relative gain -4. db 8dBBit, Relative gain -8. db 16dBBit, Relative gain, MSB -16. db Phase Shifter Range(6 bits, 64 states) to 36 Deg Bit Relative Phase, LSB Deg Bit Relative Phase Deg Bit Relative Phase Deg. 45 Bit Relative Phase -45 Deg. 9 Bit Relative Phase -9 Deg. 18 Bit Relative Phase, MSB -18 Deg. SPDT Switch On-State Relative gain -1. db Off-State Relative gain -6 db Isolation 55 db Cascaded Performance Insertion Loss 9.5 db Phase shift to 36 Deg. Input VSWR 1.2:1 - Output VSWR 1.4:1 - Attenuator Amplitude error with phase shifter in reference state ±.2 db Attenuator Phase Variation with phase shifter in reference state 3. Deg. Phase shifter Amplitude Minimum Attenuation state ±.5 db Phase shifter peak phase Minimum Attenuation state -2.5,+4.5 Deg. RMS Attenuation error <.1 db RMS Phase error < 2.25 Deg. Control Voltage TTL Compatible - DC supply voltages +5,-5 V Page 2 of 16

3 Test fixture data T A = 25 o C, Z o =5 Ω -7 Insertion Loss db Return Loss - Common Port db Page 3 of 16

4 Test fixture data T A = 25 o C, Z o =5 Ω Return Loss - Switch Port db Return loss - Swicth Port 2 db Page 4 of 16

5 Test fixture data T A = 25 o C, Z o =5 Ω Relative Gain of Major Attenuation States 5-5 Attenuation (db) Relative Phase of Major Phase States ALL Phase (Deg) Page 5 of 16

6 Test fixture data T A = 25 o C, Z o =5 Ω.4 Attenuator Amplitude Error with Phase Shifter in Reference db Attenuation State 4 Attenuator Phase Error with Phase Shifter in Reference State 3 2 Phase Error (Deg) Attenuation State Page 6 of 16

7 Test fixture data T A = 25 o C, Z o =5 Ω Deg Phase Error of Phase Shifter at Minimum Attenuation State Phase State 1 Amplitude Error of Phase Shifter at Minimum Attenuator State db Phase State Page 7 of 16

8 Test fixture data T A = 25 o C, Z o =5 Ω RMS Attenuation Error db RMS Phase Error 1.5 Deg 1.5 Page 8 of 16

9 Test fixture data T A = 25 o C, Z o =5 Ω Attenuation Linearity Attenuation (db) Attenuation State Phase Linearity Phase Shift (deg) Phase State Page 9 of 16

10 Test fixture data T A = 25 o C, Z o =5 Ω Isolaiton (db) Tx/Rx Switch Isolation Page 1 of 16

11 Mechanical Characteristics Page 11 of 16

12 Pin Number Designation 11 2 J1 J2 J2 J1 J3 J1 J3 Note: J1 : R F IN P IN 1 : +5V (A TTN.) P IN 2 : -5V (A TTN.) P IN 3 : A1 (ATTN.) P IN 4 : A2 (ATTN.) P IN 5 : A3 (ATTN.) P IN 6 : A4 (ATTN.) P IN 7 : A5 (ATTN.) P IN 8 : A6 (ATTN.) P IN 9 : G N D PIN 1: -5V (SW ) J3 : O /P PIN CONFIGURATION J2 : O /P -1 PIN 11 : +5V (P.S) PIN 12 : -5V (P.S) P IN 13 : A 1 (P.S ) P IN 14 : A 2 (P.S ) P IN 15 : A 3 (P.S ) P IN 16 : A 4 (P.S ) P IN 17 : A 5 (P.S ) P IN 18 : A 6 (P.S ) PIN 19 : +5V (SW ) PIN 2 : V _C TR L (SW ) 1. ATTN. are the Attenuator controls ; P.S. are the Phase Shifter controls; SW are Switch Controls. 2. RF ports J1, J2, & J3 are DC coupled and require external capacitors ( ~ 5-1pF) for reliable operation Page 12 of 16

13 Truth Table SPDT Switch S. No. Switch Control Active RF Path 1 J1 J3 2 1 J1 J2 Phase Shifter 18Deg 9Deg 45Deg 25Deg 11.25Deg 5.625Deg S.No. Phase Shift A6 A5 A4 A3 A2 A Page 13 of 16

14 18Deg 9Deg 45Deg 25Deg 11.25Deg 5.625Deg S.No. Phase Shift A6 A5 A4 A3 A2 A Page 14 of 16

15 Attenuator S.No. Attenuation State 16 db A6 8 db A5 4 db A4 2 db A3 1 db A db A Page 15 of 16

16 Attenuation 16 db 8 db 4 db 2 db 1 db.5 db S.No. State A6 A5 A4 A3 A2 A GaAs MMIC devices are susceptible to Electrostatic discharge. Proper precautions should be observed during handling, assembly & testing All information and Specifications are subject to change without prior notice Page 16 of 16