EF Series Power MOSFET with Fast Body Diode
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1 EF Series Power MOSFET with Fast Body Diode SiHG7N6EF PRODUCT SUMMRY (V) at T J max. 65 R DS(on) typ. at 25 C () V GS = 1 V.33 Q g (Max.) (nc) 38 Q gs (nc) 62 Q gd (nc) 12 Configuration Single TO27C S G D ORDERING INFORMTION Package Lead (Pb)free and Halogenfree G D S NChannel MOSFET FETURES Fast body diode MOSFET using E series technology Reduced t rr, Q rr, and I RRM Low figureofmerit (FOM): R on x Q g Low input capacitance (C iss ) Increased robustness due to low Q rr Ultra low gate charge (Q g ) valanche energy rated (UIS) Material categorization: for definitions of compliance please see PPLICTIONS Telecommunications Server and telecom power supplies Lighting High intensity discharge (HID) Light emitting diodes (LEDs) Consumer and computing TX power supplies Industrial Welding Battery chargers Renewable energy Solar (PV inverters) Switch mode power suppliers (SMPS) pplications using the following topologies LLC Phase shifted bridge (ZVS) 3level inverter C/DC bridge TO27C SiHG7N6EFGE3 BSOLUTE MXIMUM RTINGS (T C = 25 C, unless otherwise noted) PRMETER SYMBOL LIMIT UNIT DrainSource Voltage 6 GateSource Voltage V GS ± 3 V Continuous Drain Current (T J = 15 C) V GS at 1 V T C = 25 C 7 I D T C = 1 C 5 Pulsed Drain Current a I DM 229 Linear Derating Factor.2 W/ C Single Pulse valanche Energy b E S 176 mj Maximum Power Dissipation P D 52 W Operating Junction and Storage Temperature Range T J, T stg 55 to 15 C DrainSource Voltage Slope T J = 125 C 7 dv/dt Reverse Diode dv/dt d 5 V/ns Soldering Recommendations (Peak Temperature) c for 1 s 3 C Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. V DD = 5 V, starting T J = 25 C, L = 28.2 mh, R g = 25, I S = 11 c. 1.6 mm from case d. I SD = 35, di/dt = 75 /μs, = V S17297Rev. C, 27Feb17 1 Document Number: 91598
2 SiHG7N6EF THERML RESISTNCE RTINGS PRMETER SYMBOL TYP. MX. UNIT Maximum Junctiontombient R thj Maximum JunctiontoCase (Drain) R thjc.2 C/W SPECIFICTIONS (T J = 25 C, unless otherwise noted) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNIT Static DrainSource Breakdown Voltage V GS = V, I D = 25 μ 6 V Temperature Coefficient /T J Reference to 25 C, I D = 1 m.69 V/ C GateSource Threshold Voltage (N) V GS(th) = V GS, I D = 25 μ 2.. V GateSource Leakage I GSS V GS = ± 2 V ± 1 n V GS = ± 3 V ± 1 μ = 8 V, V GS = V 1 μ Zero Gate Voltage Drain Current I DSS = 8 V, V GS = V, T J = 125 C 2 m DrainSource OnState Resistance R DS(on) V GS = 1 V I D = Forward Transconductance g fs = 3 V, I D = S Dynamic Input Capacitance C iss V GS = V, 75 Output Capacitance C oss = 1 V, 378 Reverse Transfer Capacitance C rss f = 1 MHz 5 Effective output capacitance, energy pf related a C o(er) 263 V GS = V, = V to 8 V Effective output capacitance, time related b C o(tr) 926 Total Gate Charge Q g GateSource Charge Q gs V GS = 1 V I D = 35, = 8 V 62 nc GateDrain Charge Q gd 12 TurnOn Delay Time t d(on) 56 8 Rise Time t r V DD = 8 V, I D = TurnOff Delay Time t d(off) R g = 9.1, V GS = 1 V ns Fall Time t f Gate Input Resistance R g f = 1 MHz, open drain DrainSource Body Diode Characteristics MOSFET symbol D Continuous SourceDrain Diode Current I S 7 showing the G integral reverse Pulsed Diode Forward Current I SM S 229 p n junction diode Diode Forward Voltage V SD T J = 25 C, I S = 35, V GS = V V Reverse Recovery Time t rr ns T J = 25 C, I F = I S = 35, Reverse Recovery Charge Q rr μc di/dt = 1 /μs, V R = V Reverse Recovery Current I RRM 16 Notes a. C oss(er) is a fixed capacitance that gives the same energy as C oss while is rising from % to 8 % b. C oss(tr) is a fixed capacitance that gives the charging time as C oss while is rising from % to 8 % S17297Rev. C, 27Feb17 2 Document Number: 91598
3 SiHG7N6EF TYPICL CHRCTERISTICS (25 C, unless otherwise noted) I D, DraintoSource Current () TOP 15 V 1 V 13 V 12 V 11 V 1 V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 25 C R DS(on), DraintoSource OnResistance (Normalized) I D = 35 V GS = 1 V , DraintoSource Voltage (V) Fig. 1 Typical Output Characteristics T J, Junction Temperature ( C) Fig. Normalized OnResistance vs. Temperature I D, DraintoSource Current () TOP 15 V 1 V 13 V 12 V 11 V 1 V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 15 C C, Capacitance (pf) C oss C rss C iss V GS = V, f = 1 MHz C iss = C gs C gd, C ds shorted C rss = C gd C oss = C ds C gd , DraintoSource Voltage (V) , DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics Fig. 5 Typical Capacitance vs. DraintoSource Voltage 25 5 I D, DraintoSource Current () T J = 25 C T J = 15 C C oss (pf) 5 5 C oss E oss E oss (μj) = 2.2 V V GS, GatetoSource Voltage (V) Fig. 3 Typical Transfer Characteristics Fig. 6 C oss and E oss vs. S17297Rev. C, 27Feb17 3 Document Number: 91598
4 SiHG7N6EF V GS, GatetoSource Voltage (V) = 8 V = 3 V = 12 V I D, Drain Current () Q g, Total Gate Charge (nc) T C, Case Temperature ( C) Fig. 7 Typical Gate Charge vs. GatetoSource Voltage Fig. 1 Maximum Drain Current vs. Case Temperature 775 I SD, Reverse Drain Current () 1 T J = 15 C 1 T J = 25 C 1 V GS = V V SD, SourceDrain Voltage (V), DraintoSource Breakdown Voltage (V) I D = 1 m T J, Junction Temperature ( C) Fig. 8 Typical SourceDrain Diode Forward Voltage Fig. 11 Typical DraintoSource Voltage vs. Temperature Operation in this rea Limited by R DS(on) I DM Limited 1 I D, Drain Current () Limited by R DS(on) * T C = 25 C T J = 15 C Single Pulse BVDSS Limited , DraintoSource Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Fig. 9 Maximum Safe Operating rea 1 μs 1 ms 1 ms S17297Rev. C, 27Feb17 Document Number: 91598
5 SiHG7N6EF 1 Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Pulse Time (s) Fig. 12 Normalized Thermal Transient Impedance, JunctiontoCase R D t p V GS D.U.T. V DD R G V DD 1 V Pulse width 1 µs Duty factor.1 % I S Fig. 13 Switching Time Test Circuit Fig. 16 Unclamped Inductive Waveforms 9 % 1 V Q G Q GS Q GD 1 % V GS t d(on) t r t d(off) t f V G Charge Fig. 1 Switching Time Waveforms Fig. 17 Basic Gate Charge Waveform Vary t p to obtain required I S R G L D.U.T I S V DD Current regulator Same type as D.U.T. 5 kω 12 V.2 µf.3 µf D.U.T. V DS 1 V t p.1 Ω V GS 3 m Fig. 15 Unclamped Inductive Test Circuit Fig. 18 Gate Charge Test Circuit I G I D Current sampling resistors S17297Rev. C, 27Feb17 5 Document Number: 91598
6 SiHG7N6EF Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period V GS = 1 V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. 19 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S17297Rev. C, 27Feb17 6 Document Number: 91598
7 TO27C (High Voltage) Package Information 3 B R/2 Q E E/2 S 2 7 ØP (Datum B) Ø k M D B M ØP1 D2 2 x R (2) D D D Thermal pad 5 L1 C 2 x b2 3 x b.1 M C M b Lead ssignments 1. Gate 2. Drain 3. Source. Drain 2 x e L See view B 1 C DDE (b, b2, b) () Section C C, D D, E E MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX D E E b e 5.6 BSC.215 BSC b Ø k.25.1 b L b L b N 7.62 BSC.3 BSC b Ø P c Ø P c Q D R D S 5.51 BSC.217 BSC ECN: X1313Rev. D, 1Jul13 DWG: 5971 Notes 1. Dimensioning and tolerancing per SME Y1.5M Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body.. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (.15"). 7. Outline conforms to JEDEC outline TO27 with exception of dimension c. 8. Xian and Mingxin actually photo. E View B C C Planting (c) E1.1 M D B M View (b1, b3, b5) Base metal c1 Revision: 1Jul13 1 Document Number: 9136
8 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 217 VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVED Revision: 8Feb17 1 Document Number: 91
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Power MOSFET PRODUCT SUMMARY (V) 900 R DS(on) ( ) V GS = 10 V 3.7 Q g (Max.) (nc) 78 Q gs (nc) 10 Q gd (nc) 42 Configuration Single D D 2 PAK (TO263) G G D S ORDERING INFORMATION Package Lead (Pb)free
More informationD Series Power MOSFET
D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
More informationPower MOSFET FEATURES. IRFP240PbF SiHFP240-E3 IRFP240 SiHFP240
Power MOSFET PRODUCT SUMMRY V DS (V) 200 R DS(on) ( ) V GS = 10 V 0.18 Q g (Max.) (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single TO-247C S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb G
More informationPower MOSFET. IRFBG20PbF SiHFBG20-E3 IRFBG20 SiHFBG20. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 1000 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 1000 R DS(on) () V GS = 10 V 11 Q g max. (nc) 38 Q gs (nc) 4.9 Q gd (nc) 22 Configuration Single D TO220AB G S G DS NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free
More informationPower MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
More informationPower MOSFET FEATURES APPLICATIONS. IRFS9N60APbF IRFS9N60ATRRPbF a IRFS9N60ATRLPbF a SiHFS9N60A-E3 SiHFS9N60ATR-E3 a SiHFS9N60ATL-E3 a
Power MOSFET IRFS9N60, SiHFS9N60 PRODUCT SUMMRY V DS (V) 600 R DS(on) () V GS = 0 V 0.75 Q g max. (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single D D 2 PK (TO-263) G FETURES Low gate charge Q g results
More informationPower MOSFET FEATURES. IRFB17N50LPbF SiHFB17N50L-E3 IRFB17N50L SiHFB17N50L
Power MOSFET IRFB7N50L, SiHFB7N50L PRODUCT SUMMARY V DS (V) 500 R DS(on) ( ) V GS = 0 V 0.28 Q g (Max.) (nc) 30 Q gs (nc) 33 Q gd (nc) 59 Configuration Single TO220AB G DS ORDERING INFORMATION Package
More informationPower MOSFET FEATURES. Full Bridge PFC Boost. IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A
IRFP460, SiHFP460 Power MOSFET PRODUCT SUMMRY (V) 500 R DS(on) (Ω) = 0 V 0.27 Q g (Max.) (nc) 05 Q gs (nc) 26 Q gd (nc) 42 Configuration Single TO-247 S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb
More informationPower MOSFET. P-channel Fast switching. IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) max. () = 10 V 0.80 Q g max. (nc) 9 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single S TO0AB G G DS D PChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free
More informationPower MOSFET FEATURES DESCRIPTION. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ± 20 T A = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) () V GS = 10 V 0.28 Q g max. (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET FEATURES Dynamic dv/dt rating Repetitive
More informationPower MOSFET FEATURES. IRL520PbF SiHL520-E3 IRL520 SiHL520
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D
More informationPower MOSFET. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) () = 10 V 0.50 Q g max. (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single S TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A
Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) ( ) = 0 V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement
More informationPower MOSFET FEATURES. IRF820PbF SiHF820-E3 IRF820 SiHF820. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) ( ) = 3.0 Q g (Max.) (nc) 4 Q gs (nc) 3.3 Q gd (nc) 13 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET. IRFI740GPbF SiHFI740G-E3 IRFI740G SiHFI740G. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) () V GS = 10 V 0.55 Q g max. (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single D TO220 FULLPAK G S G D S NChannel MOSFET ORDERING INFORMATION Package
More informationPower MOSFET DESCRIPTION. IRFD9220PbF SiHFD9220-E3 IRFD9220 SiHFD9220
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) V GS = 10 V 1.5 Q g (Max.) (nc) 15 Q gs (nc) 3.2 Q gd (nc) 8.4 Configuration Single S HVMDIP G FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated
More informationPower MOSFET FEATURES. IRFB20N50KPbF SiHFB20N50K-E3 IRFB20N50K SiHFB20N50K
Power MOSFET IRFB20N50K, SiHFB20N50K PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 0 V 0.2 Q g (Max.) (nc) 0 Q gs (nc) 33 Q gd (nc) 54 Configuration Single D TO-220 G G DS S FETURES Low Gate Charge Q
More informationPower MOSFET FEATURES. IRF9510PbF SiHF9510-E3 IRF9510 SiHF9510
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 10 V 1. Q g (Max.) (nc) 8.7 Q gs (nc). Q gd (nc) 4.1 Configuration Single S FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating
More informationD Series Power MOSFET
D Series Power MOSFET SiHPN4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) V GS = V.6 Q g max. (nc) 3 Q gs (nc) 4 Q gd (nc) 7 Configuration Single TO22AB G DS ORDERING INFORMATION Package
More informationPower MOSFET FEATURES. IRFP23N50LPbF SiHFP23N50L-E3 IRFP23N50L SiHFP23N50L
Power MOSFET IRFP23N50L, SiHFP23N50L PRODUCT SUMMRY V DS (V) 500 R DS(on) ( ) V GS = V 0.90 Q g (Max.) (nc) 50 Q gs (nc) Q gd (nc) 72 Configuration Single TO-27C S G D ORDERING INFORMTION Package Lead
More informationPower MOSFET FEATURES. Motor Drive. IRFPS40N60KPbF SiHFPS40N60K-E3 IRFPS40N60K SiHFPS40N60K T C = 25 C
Power MOSFET PRODUCT SUMMRY (V) 600 R DS(on) ( ) V GS = V 0. Q g (Max.) (nc) 330 Q gs (nc) 84 Q gd (nc) 50 Configuration Single D FETURES Low Gate Charge Q g Results in Simple Drive Requirement Improved
More informationPower MOSFET. IRFI830GPbF SiHFI830G-E3 IRFI830G SiHFI830G T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) V GS = 10 V 1.5 Q g (Max.) (nc) 38 Q gs (nc) 5.0 Q gd (nc) 22 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET FEATURES. IRLD120PbF SiHLD120-E3 IRLD120 SiHLD120
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
More informationPower MOSFET T C = 25 C
Power MOSFET PRODUCT SUMMRY V DS (V) 200 R DS(on) () = 10 V 0.18 Q g max. (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single D I 2 PK (TO262) G D S D 2 PK (TO263) G G D S S NChannel MOSFET FETURES
More informationPower MOSFET. IRFD9024PbF SiHFD9024-E3 IRFD9024 SiHFD9024
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.28 Q g (Max.) (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET FEATURES. IRLD014PbF SiHLD014-E3 IRLD014 SiHLD014
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 5 V 0.20 Q g (Max.) (nc) 8.4 Q gs (nc) 2.6 Q gd (nc) 6.4 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating For Automatic Insertion End Stackable
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Power MOSFET PRODUCT SUMMRY V DS (V) 60 R DS(on) () V GS = 10 V 0.018 Q g (Max.) (nc) 110 Q gs (nc) 29 Q gd (nc) 36 Configuration Single D I 2 PK (TO-262) D 2 PK (TO-263) FETURES dvanced process technology
More informationPower MOSFET FEATURES. IRFP27N60KPbF SiHFP27N60K-E3 IRFP27N60K SiHFP27N60K
Power MOSFET IRFP27N60K, SiHFP27N60K PRODUCT SUMMRY V DS (V) 600 R DS(on) ( ) V GS = V 8 Q g (Max.) (nc) 80 Q gs (nc) 56 Q gd (nc) 86 Configuration Single TO-27C S G D ORDERING INFORMTION Package Lead
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D Series Power MOSFET SiHD3N5D PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. ( ) at 25 C V GS = V 3.2 Q g (max.) (nc) 2 Q gs (nc) 3 Q gd (nc) 5 Configuration Single DPAK (TO252) D G S G D S NChannel
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IRF961, SiHF961 Power MOSFET PRODUCT SUMMARY (V) R DS(on) (Ω) = 1 V 3. Q g (Max.) (nc) 11 Q gs (nc) 7. Q gd (nc) 4. Configuration Single TO G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
More informationPower MOSFET FEATURES. IRF9Z34PbF SiHF9Z34-E3 IRF9Z34 SiHF9Z34
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) = 10 V 0.14 Q g (Max.) (nc) 34 Q gs (nc) 9.9 Q gd (nc) 16 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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Power MOSFET PRODUCT SUMMARY V DS (V) 500 R DS(on) (Ω) V GS = V 0.26 Q g (Max.) (nc) 20 Q gs (nc) 34 Q gd (nc) 54 Configuration Single D TO220 G G DS S NChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES. IRF710PbF SiHF710-E3 IRF710 SiHF710. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) ( ) = 3.6 Q g (Max.) (nc) 17 Q gs (nc) 3.4 Q gd (nc) 8.5 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
More informationPower MOSFET. ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free and Halogen-free SiHFL110-GE3 SiHFL110TR-GE3 a Lead (Pb)-free T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D SOT223 G D S G D S NChannel MOSFET FEATURES Halogenfree According
More informationPower MOSFET FEATURES. IRFPG40PbF SiHFPG40-E3 IRFPG40 SiHFPG40
Power MOSFET PRODUCT SUMMARY (V) 1000 R DS(on) (Ω) V GS = 10 V 3.5 Q g (Max.) (nc) 120 Q gs (nc) 16 Q gd (nc) 65 Configuration Single TO247AC S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S
More informationPower MOSFET FEATURES. IRF530PbF SiHF530-E3 IRF530 SiHF530. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.16 Q g (Max.) (nc) 6 Q gs (nc) 5.5 Q gd (nc) 11 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET IRF510, SiHF510 PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt rating Repetitive avalanche rated 175 C
More informationPower MOSFET. IRFI9634GPbF SiHFI9634G-E3 IRFI9634G SiHFI9634G T C = 25 C. V GS at - 10 V
Power MOSFET PRODUCT SUMMARY (V) 250 R DS(on) (Ω) V GS = 10 V 1.0 Q g (Max.) (nc) 38 Q gs (nc) 8.0 Q gd (nc) 18 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES APPLICATIONS. IRFS9N60APbF IRFS9N60ATRRPbF a IRFS9N60ATRLPbF a SiHFS9N60A-E3 SiHFS9N60ATR-E3 a SiHFS9N60ATL-E3 a
Power MOSFET PRODUCT SUMMRY V DS (V) 600 R DS(on) () V GS = 0 V 0.75 Q g max. (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single D D 2 PK (TO-263) G FETURES Low gate charge Q g results in simple drive
More informationPower MOSFET. IRFI740GPbF SiHFI740G-E3 IRFI740G SiHFI740G
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 0.55 Q g (Max.) (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 1.8 Q g (Max.) (nc) 20 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single D HVMDIP FEATURES Dynamic dv/dt rating Repetitive avalanche rated For
More informationPower MOSFET FEATURES. IRF630PbF SiHF630-E3 IRF630 SiHF630. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 23 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration HVMDIP S G Single S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET FEATURES. IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Max.) (Ω) = 0.80 Q g (Max.) (nc) 29 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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IRFP450, SiHFP450 Power MOSFET PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 64 Q gs (nc) 16 Q gd (nc) 26 Configuration Single D FETURES Low Gate Charge Q g Results in Simple
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P-Channel 6 V (D-S) 75 C MOSFET SUMP6-7L PRODUCT SUMMRY V DS (V) R DS(on) (Ω) I D () d -6.69 at V GS = - V.88 at V GS = -4.5 V - S TO-263 FETURES TrenchFET power MOSFET Package with low thermal resistance
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