N-Channel 200 V (D-S) 175 C MOSFET

Transcription

1 N-Channel 2 V (D-S) 175 C MOSFET SUG99E TO-27 S D Top View G PRODUCT SUMMRY V DS (V) 2 R DS(on) max. (Ω) at V GS = V.95 R DS(on) max. (Ω) at V GS = 7.5 V. Q g typ. (nc) 86 I D () d Configuration Single ORDERING INFORMTION Package Lead (Pb)-free and halogen-free FETURES ThunderFET power MOSFET Low R DS - Q g figure-of-merit (FOM) Maximum 175 C junction temperature % R g and UIS tested Material categorization: for definitions of compliance please see PPLICTIONS Synchronous rectification Power supplies DC/C inverter DC/DC converter Solar micro inverter Motor drive switch TO-27 SUG99E-GE3 G D S N-Channel MOSFET BSOLUTE MXIMUM RTINGS (T = 25 C, unless otherwise noted) PRMETER SYMBOL LIMIT UNIT Drain-source voltage V DS 2 Gate-source voltage V GS ± 2 V Continuous drain current d I D T C = 125 C 77.6 Pulsed drain current (t = μs) I DM 3 Continuous source-drain diode current I S d Single pulse avalanche current a I S L =.1 mh Single pulse avalanche energy a E S 5 mj Maximum power dissipation 395 b P D T C = 125 C 132 b W Operating junction and storage temperature range T J, T stg -55 to +175 Soldering recommendations (peak temperature) c 26 C THERML RESISTNCE RTINGS PRMETER SYMBOL MXIMUM UNIT Maximum junction-to-ambient (PCB mount) c R thj Maximum junction-to-case (drain) Steady state R thjc.38 C/W Notes a. Duty cycle 1 % b. See SO curve for voltage derating c. When mounted on 1" square PCB (FR material) d. Package limited S Rev. B, 17-Jul-17 1 Document Number: 759 RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

2 SUG99E SPECIFICTIONS (T J = 25 C, unless otherwise noted) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNIT Static Drain-source breakdown voltage V DS V GS = V, I D = 25 μ V Gate-source threshold voltage V GS(th) V DS = V GS, I D = 25 μ 2 - V Gate-source leakage I GSS V DS = V, V GS = ± 2 V n Zero gate voltage drain current I DSS V DS = 2 V, V GS = V, T J = 125 C V DS = 2 V, V GS = V μ V DS = 2 V, V GS = V, T J = 175 C m On-state drain current a I D(on) V DS V, V GS = V Drain-source on-state resistance a V GS = V, I D = R DS(on) V GS = 7.5 V, I D = Ω Forward transconductance a g fs V DS = 15 V, I D = S Dynamic b Input capacitance C iss Output capacitance C oss V DS = V, V GS = V, f = 1 MHz pf Reverse transfer capacitance C rss Total gate charge Q g Gate-source charge Q gs V DS = V, V GS = V, I D = nc Gate-drain charge Q gd Gate resistance R g f = 1 MHz Ω Turn-on delay time t d(on) Rise time t r V DD = V, R L = 6.7 Ω, I D 15, - 66 Turn-off delay time t d(off) V GEN = V, R g = 1 Ω ns Fall time t f - 6 Drain-Source Body Diode Characteristics Pulse diode forward current (t = μs) I SM - - Body diode voltage V SD I F = 15, V GS = V V Body diode reverse recovery time t rr ns Body diode reverse recovery charge Q rr μc I F = 15, di/dt = /μs Reverse recovery fall time t a ns Reverse recovery rise time t b Body diode peak reverse recovery charge I RM(REC) Notes a. Pulse test; pulse width 3 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S Rev. B, 17-Jul-17 2 Document Number: 759 RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

3 SUG99E TYPICL CHRCTERISTICS (25 C, unless otherwise noted) 8 V GS = V thru 6 V V GS = 5 V 6 2 T C = 125 C T C =-55 C V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics R DS(on) - On-Resistance (Ω) V GS = 7.5 V V GS = V C - Capacitance (pf) C oss C iss C rss V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance I D = 2 V DS = V 2.8 V GS = V, I D = 2 V GS - Gate-to-Source Voltage (V) V DS = 5 V V DS = 16 V Q g - Total Gate Charge (nc) R DS(on) - On-Resistance (Normalized) V GS = 7.5 V, I D = T J - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature S Rev. B, 17-Jul-17 3 Document Number: 759 RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

4 SUG99E TYPICL CHRCTERISTICS (25 C, unless otherwise noted).5 I D = 2 I S - Source Current () T J = 15 C T J = 25 C R DS(on) - On-Resistance (Ω) T J = 15 C T J = 25 C V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage V GS(th) (V) I D = 25 μ g fs - Transconductance (S) T C =-55 C T C = 125 C T J - Temperature ( C) Threshold Voltage Transconductance I DM limited I D limited 1 Limited by R DS(on) (1) 1 ms ms DC, s, 1 s, ms.1 BVDSS limited Single pulse V DS - Drain-to-Source Voltage (V) (1) V GS > minimum V GS at which R DS(on) is specified Safe Operating rea, Junction-to-mbient S Rev. B, 17-Jul-17 Document Number: 759 RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

5 SUG99E TYPICL CHRCTERISTICS (25 C, unless otherwise noted) T C - Case Temperature ( C) Current Derating a 25 V DS - Drain-to-Source Voltage (V) I D = m T J - Temperature ( C) I DV () 15 C 25 C Time (s) Drain Source Breakdown vs. Junction Temperature I DV vs. Time Note a. The power dissipation P D is based on T J max. = 25 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S Rev. B, 17-Jul-17 5 Document Number: 759 RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

6 SUG99E TYPICL CHRCTERISTICS (25 C, unless otherwise noted) 2 N ormalized Effective Transien t Thermal Impedance 1.1 Duty Cycle = Single Pulse Square Wave Pulse Duration (sec) 1 K Normalized Thermal Transient Impedance, Junction-to-mbient Normalized Effective Transient Thermal Impedance Duty cycle = Single pulse Pulse Time (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see S Rev. B, 17-Jul-17 6 Document Number: 759 RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

7 TO-27C (High Voltage) Package Information 3 B R/2 Q E E/2 S 2 7 ØP (Datum B) Ø k M D B M ØP1 D2 2 x R (2) D D D Thermal pad 5 L1 C 2 x b2 3 x b. M C M b Lead ssignments 1. Gate 2. Drain 3. Source. Drain 2 x e L See view B 1 C DDE (b, b2, b) () Section C - C, D - D, E - E MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX D E E b e 5.6 BSC.215 BSC b Ø k.25. b L b L b N 7.62 BSC.3 BSC b Ø P c Ø P c Q D R D S 5.51 BSC.217 BSC ECN: X13-3-Rev. D, 1-Jul-13 DWG: 5971 Notes 1. Dimensioning and tolerancing per SME Y1.5M Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body.. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (.15"). 7. Outline conforms to JEDEC outline TO-27 with exception of dimension c. 8. Xian and Mingxin actually photo. E View B C C Planting (c) E1.1 M D B M View - (b1, b3, b5) Base metal c1 Revision: 1-Jul-13 1 Document Number: 9136 For technical questions, contact: hvm@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

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