A Highly Integrated Dual Band Receiver IC for DAB
|
|
- Nigel Patterson
- 6 years ago
- Views:
Transcription
1 A Highly Integrated Dual Band Receiver IC for DAB 陳彥宏 Yen-Horng Chen High Frequency IC Design Dept. Abstract A dual band receiver IC for Digital Audio Broadcasting (DAB) is described in this paper. The chip integrates most of the functions necessary to receive and down convert DAB L-Band (1452~ 1492MHz) and Band3 (174~240MHz) signals for further baseband processing, including two variable gain LNAs, mixers, VGA, IF amplifiers, L-Band PLL, and Band3 VCO. The overall Band3 receiver gain is 92dB and NF is 4.5dB. L-Band receiver gain is 91dB and NF is 8.9dB. In both bands, gain control ranges are over 84dB and THD remains above 30dBc up to input levels of 14dBm. The linearity and dynamic range of this system can be improved by using an external attenuator that has 20dB variable attenuation. Two AGC stages are implemented in this receiver. With the novel reference-current-based, programmable AGC design, this receiver provides 8dB range to optimize output level to match the dynamic range of the following A/D converter. The prescalar used in L-Band PLL realizes a programmable divide - by-multi-divisor function, 2 n -2, 2 n -1, 2 n, and 2 n +1, by utilizing conventional divide-by-4/5 stage with slow and simple logic timing. This circuit was fabricated in TSMC 0.35µm SiGe process with 3.3V power supply. It consumes 88mA and 65mA for L-Band and Band3 mode, respectively. 1. Introduction Digital Audio Broadcasting (DAB) developed by the EUREKA-147 project [1] has already been introduced as the digital standard for audio broadcasting and used successfully around the world. It was designed to be a reliable digital broadcasting system aimed at mobile fixed and portable receivers. The DAB system uses multi-carrier transmission technology, COFDM, which disperses the information to a large number of differential-qpsk modulated carriers with an aggregate bandwidth of 1.536MHz. Combining this frequency dispersal with time interleaving, guard intervals and digital audio compression technique (MPEG layer II), the reception and audio signal quality can be improved. It will be capable of transmitting 6 CD-quality stereo programs simultaneously, and the signal can carry data as well. The DAB system is revolutionary in moving from analog broadcasting to digital radio, while adding flexibility and robustness in wireless broadcasting. DAB receivers have been developed for many years, however, most of the previous designs have less integration and large power consumption [2]-[4]. The chip presented in this paper integrates most of the functions necessary to receive and down convert DAB L-Band (1452 ~ 1492MHz) and 108 系統晶片 002 期
2 Band3 (174 ~ 240MHz) signals for further baseband processing. The circuit was implemented using TSMC 0.35µm SiGe process with 3.3V power supply. It consumes 88mA and 65mA for L-Band and Band3 operation, respectively. In this paper, section 2 and section 3 describe the receiver architecture and the building blocks design in detail, respectively. Die photograph and the measured results are given in section 4, and section 5 summarizes this work. 2. DAB Receiver Architecture Fig. 1 demonstrates the configuration used in this DAB receiver design. RF signal from the antenna is divided in frequency domain by duplexer (DUP) into two separate channels. They are then filtered by external bandpass filters to achieve the necessary image rejection for later down mixing. Output from the filter drives separate on-chip variable gain LNAs and the following filters. The on-chip L-Band mixer converts the L-Band signal down to a frequency within Band3 frequency range. The required LO signal is provided by L-Band PLL. The following IF mixer converts either L-Band or Band3 signal down to IF frequency of MHz. The LO signal comes from on-chip Band3 VCO. After the IF mixer, the two band paths share a single receiver chain, including IF amplifier (AMP1), variable gain amplifier (VGA), IF buffer amplifier (AMP2), channel selective and noise rejection filters. The IF amplifier (AMP1) is followed by an external filter which provides the ultimate selectivity of the radio frequency parts of the receiver. The variable gain amplifier (VGA) provides the necessary gain and dynamic range of this receiver. The IF buffer amplifier (AMP2) is the last stage of the analog receiver. It provides an additional gain to produce a high-level output and drives the following circuits. The signal path of this receiver comprises two AGC stages, RF and IF AGC. Detector (D1) with an external attenuator (ATN), L-Band LNA and mixer or Band3 LNA provides RF AGC function. Detector (D2) with VGA and AMP2 provides IF AGC function. 3. Building Blocks Design 3.1 Variable Gain LNAs Design The L-Band and Band3 variable gain LNAs are Fig. 1 DAB receiver configuration SoC Technical Journal 109
3 common emitter transconductance stages that use current steering method to accomplish the necessary gain range of each band. Single-ended rather than differential designs are used to achieve minimum NF and minimize the number of external components. The simplified schematic of variable gain LNAs, for both bands, is shown in Fig. 2(a). Parallel connected transistor in cascode diverts RF signal away from the load, resulting in continuous variable gain. Transistor Q 1 is biased using a current mirror concept (Q 1 -Q 2 ). Additional resistors (R 1, R 2 ) are added to increase the input impedance seen from Q 2 towards the bias circuit. 3.2 Mixer Design 3.3 IF Amplifier (AMP1) Design Because AMP1 directly drives a filter with a large in-band loss, in order to maintain a good noise performance of the receiver, it must have high gain and low noise figure. Fig. 3(a) is the simplified schematic of AMP1. Single-ended design is used because of its better NF performance. It is a common emitter stage with external emitter degeneration inductor L 1. Transistor Q 1 is the input transistor and the external LC tank is tuned to MHz. This amplifier is designed with approximately 23dB of power gain while maintaining match at the input and output of 50Ω. A double-balanced Gilbert mixer topology is used for L-Band and IF mixers (Fig. 2(b)). The mixers employ bipolar inputs with degeneration resistors to improve linearity. In IF mixer design, the two band paths have separate input stages respectively and share a single switching pairs to down convert the RF current. The output of mixer consists of an inductor in parallel with a capacitor that are used to reject the undesired signals. Fig. 3 Simplified schematic of (a) AMP1 and (b) AMP2 3.4 IF Variable Gain Amplifier Design Fig. 2 Simplified schematic of (a) variable gain LNA and (b) mixer A classical Gilbert-quad based on current steering is used for VGA design, as shown in Fig. 4. It consists of three-stage Gilbert-quad amplifiers, a gain control block that provides the voltage transformation function, and a fixed gain amplifier that enhances the overall gain. The gain versus control voltage of this VGA is expressed as [5] A R V = BGR C V gmr L R 3 VBGR From the above expression, by choosing R 系統晶片 002 期
4 and R BGR as the same type, the gain of this VGA is insensitive to process and temperature. The three stages of Gilbert-quad amplifiers together with a fixed gain cascode amplifier is designed with the highest gain of 60dB and more than 60 db gain range as V C varies from 0.18 to 2V. Fig. 4 Simplified schematic of VGA accurate gain function against the unideal process variation. 3.6 Detector and Programmable AGC Fig. 5 shows the architecture of the RF and IF AGC implemented in the DAB receiver. It is composed of a forward path and a feedback path. In the forward path, LNA & attenuator or VGA is controlled by a feedback dc signal (V C ) to provide a necessary gain range that fulfills the system dynamic range. The subsequent mixers or AMP2 provides not only an additional gain but also the amplitude information that is used to set the AGC loop. The feedback path includes two main components, detector and loop filter. The detector extracts the output amplitude information, which compares with a reference set point and the loop filter integrates their difference to obtain the control signal V C. 3.5 IF Buffer Amplifier (AMP2) Design AMP2 is the last stage of the analog receiver. It has to provide an adequate voltage swing to the following signal processing blocks, so high linearity and low distortion is needed. An amplifier structure that combines the concepts of device match and current amplification techniques, as shown in Fig. 3(b), is used to implement this circuit. The input transconductance stage with emitter degeneration resistor, two-stage current amplifier contains two current mirror pairs and the current-to-voltage converted resistor provides an Fig. 5 AGC architecture The RF and IF AGC are designed with a novel reference-current-based, programmable structure. Fig. 6 shows the block diagram. In conventional feedback path [6], detector extracts AGC output. The control voltage is obtained from the integration of the difference between V det and a reference voltage. In our feedback path, the AGC output is SoC Technical Journal 111
5 also extracted by a detector. This detector, including a full-wave rectifier, a level shift amplifier and a V/I converter, will generate an output DC current I 1 that is proportional to input AC signal. The reference current I 2 decides the AGC output setting amplitude. When I 2 is higher than I 1, the output level is smaller than the required one. In this case, current I 2 -I 1 will charge the capacitor, and then the control voltage increases, and with the gain of VGA and AGC output level, and vice versa. When the output level is equal to the leveled value, there will be no current charge or discharge this capacitor, so V C and the gain of VGA hold constant. The AGC has a fixed and stable output. It is easy to program this reference current, and with a proper design of V/I converter and the reference current, the symmetric topology can minimize the effect of process variation. Hence, a programmable and steady AGC can be achieved. multiplier (transistors Q 14 -Q 19 ) with a simple one-pole RC (R P and C P ) low-pass filter is used as a full-wave rectifier here. The rectifier signal is provided by a single-ended to differential amplifier and emitter followers (transistors Q 12 and Q 13 ). The level shift amplifier is a shunt-shunt feedback stage with a gain setting by R 7 / R 6 and it also provides the differential to single-ended conversion. A resistor (R 8 ), operational amplifier (OP2) and transistor (M 5 ) form the voltage to current converter. The output current (I 1 ) is proportional to the input signal divided by R 8. Fig. 7 Simplified schematic of the AGC feedback path Fig. 6 AGC feedback path. (a) Conventional AGC feedback path (b) Proposed AGC feedback path Fig. 7 is the simplified schematic of the AGC feedback path. The detector is composed of a full-wave rectifier, a level shift amplifier and a voltage to current converter. A Gilbert type The reference current (I 2 ) is generated by a bandgap reference voltage (V BGR ) divided by a resistor (R ref ) and a current mirror array (M 6 -M 10 ). With the combination of currents in the current mirror array, a reference current proportional to V BGR / R ref can be achieved. By choosing resistors R 8 and R ref as the same type, the effect of process variation on AGC output level setting can be minimized. In addition, other current mirrors (M 11 -M 12 and M 13 -M 14 ) are used to set the directions of I 1 and I 2 in order to ensure a negative 112 系統晶片 002 期
6 Fig. 8 Simulink simulation of the close loop AGC feedback loop. The loop filter is implemented using a capacitor (C 1 ). By carefully selecting the capacitor value, system time constant can be selected to optimize performance. Fig. 8 is the Simulink simulation of the close loop AGC. The output is constant with low and high input signal level. 3.7 Prescalar Design Fig. 9 Timing diagram of prescalar According to the frequency plan, L-Band PLL requires it to generate a LO signal at GHz feeding L-Band mixer. It can be accomplished by a divide-by-31 prescalar followed by a divide-by-640 stage with a reference clock of 64kHz. In avoiding tight logic timing and complex control in prescalar design, a conventional divide-by-4/5 core divider is utilized. As shown in the timing diagram Fig. 9, the trigger edge changes once the 30/31 th clock is counted, and the logics used to set divide-by-4/5 and invert the trigger edge only come from relatively slower signals than the divided signal. The edge-trigger-inverting function can also be bypassed to realize divide-by-32/33, and then achieve a divide-by-2 n -2, 2 n -1, 2 n, 2 n +1 multidivisor prescalar. This prescalar can work well up to the frequency of 1.5GHz. 4. Measured Performance The circuit was fabricated in TSMC 0.35μm SiGe process and packaged in plastic TQFP package. Fig. 10 is the die photograph. The detail-measured results are summarized in Table 1. The receiver gain control is distributed in LNAs and VGA, and an external attenuator provides extra 20dB variable attenuation that can extend the receiver dynamic range and alleviate the system linearity requirement. The measured dynamic responses of this IC are shown in Fig. 11. Band3 and L-Band receiver gain and NF are 92dB and 4.5dB, 91dB and 8.9dB. In both bands, gain control ranges are over 84dB and THD remains above 30dBc up to input levels of 14dBm. The NF SoC Technical Journal 113
7 degrades less than 1dB for 1dB gain reduction, insuring an improving C/N ratio as the input power increases. Besides, this receiver has a programmable output based on the design of reference-current-based, programmable AGC. This capability provides 8dB range to optimize output level to match the dynamic range of the following A/D converter. Fig. 10 Die photograph Table 1 Summary of Measurement Complete Receiver (wo external attenuator) Previous Work L-Band Band3 [2]* [3]** Conversion Gain 91dB 92dB 88dB 91dB Variable Gain range 84dB 94dB 87.4dB 106dB NF (max. gain) 8.9dB 4.5dB 6dB 9.5dB/12dB Power Consumption 290mW (88mA) 214mW (65mA) 730mW 1.1W / 646mW L-Band LNA Band3 LNA Power Gain Range -14 ~ 10dB -10 ~ 24dB NF (max. gain) 6.5dB 2.6dB iip3 (max. gain) -2.5dBm -6dBm ip1db (min. gain) -12dBm -19.3dBm Current 10.36mA 10.7mA L-Band Mixer IF Mixer Conversion Gain 14.4dB 14dB NF 8.7dB 11.9dB iip3-2dbm -2dBm ip1db -13.5dBm dBm Current 15.2mA 13.4mA AMP1 VGA AMP2 Gain 22.7dB -2 ~ 58dB 14dB NF 1.25dB 13dB iip3 4.5dB ip1db -9dBm -19.5dBm -3dBm Current 20.2mA 6.41mA 3.97mA * Separate RF and IF receiver ICs. L-Band VCO is included, but PLL is not included in this design. ** Independent L-Band and Band3 receiver ICs. The L-Band receiver receives and down converts L-Band signal within Band3 frequency range. L-Band VCO is included in this design. The NF shown here are individual NF of each IC. The power consumption is the requirement of each band operation mode. Fig. 11 Measured dynamic responses of DAB. (a) L-Band dynamic response (b) Band3 dynamic response 114 系統晶片 002 期
8 5. Conclusion A receiver IC has been presented which provides a dual band down conversion and AGC function for DAB system. This circuit integrates most of the functions necessary to receive and down convert DAB signals and consumes only 290mW and 214mW for L-Band and Band3 modes, respectively. A novel reference-current-based, programmable AGC and the proposed divideby-multi-divisor prescalar used in this work also enable flexibility and simplicity in wireless communication circuit design. 6. References [1] ETS , Radio broadcasting systems; Digital audio broadcasting to mobile portable and fixed receivers, ETSI, 2 nd ed., May [2] M. Bolle, D. Clawin, K. Gieske, F. Hofmann, T. Mlasko, M. J. Ruf, G. Spreitz, The receiver engine chip-set for digital audio broadcasting, ISSSE 98., pp , Oct [3] W. Titus, R. Croughwell, C. Schiller, L. DeVito, A Si BJT RF dual band receiver IC for DAB, IEEE MTT-S International, vol. 1, pp , June [4] U2730B, L-Band down-converter for DAB receiver, U2731B, DAB one-chip front end, ATMEL Wireless & Micro-controllers, Oct [5] Yen-Horng Chen, A reference-current-based, programmable IF AGC for a DAB receiver, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp , June [6] Z. Lao, M. Berroth, V. Hurm, A. Thiede, R. Bosch, P. Hofmann, A. Hulsmann, C. Moglestue, K. Kohler, 25 Gb/s AGC amplifier, 22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier ICs using AlGaAs/GaAs-HEMTs, ISSCC Digest of Technical Papers, pp , Feb Author 陳彥宏 Yen-Horng Chen was born in Taipei, Taiwan, He received the B.S. in electrical engineering and the M.S. in communication engineering from National Taiwan University, Taipei, in 1999 and 2001 respectively. He worked on the design of microwave circuit and MMIC from 1999 to In 2001, he joined SoC Technology Center (STC), Industrial Technology Research Institute (ITRI), HsinChu, Taiwan. His research interests are in the area of wireless communication integrated circuits. He is currently working on SiGe BiCMOS WCDMA transceiver, DAB receiver and CMOS radio frequency circuits. yenhorng@itri.org.tw ( 本文章摘錄自 系統晶片 002 期, 由工研院系統晶片技術發展中心發行 ) SoC Technical Journal 115
ALTHOUGH zero-if and low-if architectures have been
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 40, NO. 6, JUNE 2005 1249 A 110-MHz 84-dB CMOS Programmable Gain Amplifier With Integrated RSSI Function Chun-Pang Wu and Hen-Wai Tsao Abstract This paper describes
More informationISSCC 2003 / SESSION 20 / WIRELESS LOCAL AREA NETWORKING / PAPER 20.2
ISSCC 2003 / SESSION 20 / WIRELESS LOCAL AREA NETWORKING / PAPER 20.2 20.2 A Digitally Calibrated 5.15-5.825GHz Transceiver for 802.11a Wireless LANs in 0.18µm CMOS I. Bouras 1, S. Bouras 1, T. Georgantas
More informationA 5 GHz CMOS Low Power Down-conversion Mixer for Wireless LAN Applications
Proceedings of the 5th WSEAS Int. Conf. on CIRCUITS, SYSTES, ELECTRONICS, CONTROL & SIGNAL PROCESSING, Dallas, USA, November 1-, 2006 26 A 5 GHz COS Low Power Down-conversion ixer for Wireless LAN Applications
More informationISSCC 2003 / SESSION 20 / WIRELESS LOCAL AREA NETWORKING / PAPER 20.5
ISSCC 2003 / SESSION 20 / WIRELESS LOCAL AREA NETWORKING / PAPER 20.5 20.5 A 2.4GHz CMOS Transceiver and Baseband Processor Chipset for 802.11b Wireless LAN Application George Chien, Weishi Feng, Yungping
More informationISSCC 2006 / SESSION 33 / MOBILE TV / 33.4
33.4 A Dual-Channel Direct-Conversion CMOS Receiver for Mobile Multimedia Broadcasting Vincenzo Peluso, Yang Xu, Peter Gazzerro, Yiwu Tang, Li Liu, Zhenbiao Li, Wei Xiong, Charles Persico Qualcomm, San
More informationReconfigurable and Simultaneous Dual Band Galileo/GPS Front-end Receiver in 0.13µm RFCMOS
Reconfigurable and Simultaneous Dual Band Galileo/GPS Front-end Receiver in 0.13µm RFCMOS A. Pizzarulli 1, G. Montagna 2, M. Pini 3, S. Salerno 4, N.Lofu 2 and G. Sensalari 1 (1) Fondazione Torino Wireless,
More informationCHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN
93 CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 4.1 INTRODUCTION Ultra Wide Band (UWB) system is capable of transmitting data over a wide spectrum of frequency bands with low power and high data
More informationSP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver
SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver Arvin R. Shahani, Derek K. Shaeffer, Thomas H. Lee Stanford University, Stanford, CA At submicron channel lengths, CMOS is
More informationFully integrated CMOS transmitter design considerations
Semiconductor Technology Fully integrated CMOS transmitter design considerations Traditionally, multiple IC chips are needed to build transmitters (Tx) used in wireless communications. The difficulty with
More informationISSCC 2006 / SESSION 20 / WLAN/WPAN / 20.5
20.5 An Ultra-Low Power 2.4GHz RF Transceiver for Wireless Sensor Networks in 0.13µm CMOS with 400mV Supply and an Integrated Passive RX Front-End Ben W. Cook, Axel D. Berny, Alyosha Molnar, Steven Lanzisera,
More informationResearch and Development Activities in RF and Analog IC Design. RFIC Building Blocks. Single-Chip Transceiver Systems (I) Howard Luong
Research and Development Activities in RF and Analog IC Design Howard Luong Analog Research Laboratory Department of Electrical and Electronic Engineering Hong Kong University of Science and Technology
More informationA low-if 2.4 GHz Integrated RF Receiver for Bluetooth Applications Lai Jiang a, Shaohua Liu b, Hang Yu c and Yan Li d
Applied Mechanics and Materials Online: 2013-06-27 ISSN: 1662-7482, Vol. 329, pp 416-420 doi:10.4028/www.scientific.net/amm.329.416 2013 Trans Tech Publications, Switzerland A low-if 2.4 GHz Integrated
More information433MHz front-end with the SA601 or SA620
433MHz front-end with the SA60 or SA620 AN9502 Author: Rob Bouwer ABSTRACT Although designed for GHz, the SA60 and SA620 can also be used in the 433MHz ISM band. The SA60 performs amplification of the
More informationA 3 8 GHz Broadband Low Power Mixer
PIERS ONLINE, VOL. 4, NO. 3, 8 361 A 3 8 GHz Broadband Low Power Mixer Chih-Hau Chen and Christina F. Jou Institute of Communication Engineering, National Chiao Tung University, Hsinchu, Taiwan Abstract
More informationHigh Gain Low Noise Amplifier Design Using Active Feedback
Chapter 6 High Gain Low Noise Amplifier Design Using Active Feedback In the previous two chapters, we have used passive feedback such as capacitor and inductor as feedback. This chapter deals with the
More informationA PROCESS AND TEMPERATURE COMPENSATED RING OSCILLATOR
A PROCESS AND TEMPERATURE COMPENSATED RING OSCILLATOR Yang-Shyung Shyu * and Jiin-Chuan Wu Dept. of Electronics Engineering, National Chiao-Tung University 1001 Ta-Hsueh Road, Hsin-Chu, 300, Taiwan * E-mail:
More informationADI 2006 RF Seminar. Chapter II RF/IF Components and Specifications for Receivers
ADI 2006 RF Seminar Chapter II RF/IF Components and Specifications for Receivers 1 RF/IF Components and Specifications for Receivers Fixed Gain and Variable Gain Amplifiers IQ Demodulators Analog-to-Digital
More informationDesign of low phase noise InGaP/GaAs HBT-based differential Colpitts VCOs for interference cancellation system
Indian Journal of Engineering & Materials Sciences Vol. 17, February 2010, pp. 34-38 Design of low phase noise InGaP/GaAs HBT-based differential Colpitts VCOs for interference cancellation system Bhanu
More informationSession 3. CMOS RF IC Design Principles
Session 3 CMOS RF IC Design Principles Session Delivered by: D. Varun 1 Session Topics Standards RF wireless communications Multi standard RF transceivers RF front end architectures Frequency down conversion
More informationQuadrature GPS Receiver Front-End in 0.13μm CMOS: The QLMV cell
1 Quadrature GPS Receiver Front-End in 0.13μm CMOS: The QLMV cell Yee-Huan Ng, Po-Chia Lai, and Jia Ruan Abstract This paper presents a GPS receiver front end design that is based on the single-stage quadrature
More informationAn Inductor-Based 52-GHz 0.18 µm SiGe HBT Cascode LNA with 22 db Gain
An Inductor-Based 52-GHz 0.18 µm SiGe HBT Cascode LNA with 22 db Gain Michael Gordon, Sorin P. Voinigescu University of Toronto Toronto, Ontario, Canada ESSCIRC 2004, Leuven, Belgium Outline Motivation
More informationDesign and optimization of a 2.4 GHz RF front-end with an on-chip balun
Vol. 32, No. 9 Journal of Semiconductors September 2011 Design and optimization of a 2.4 GHz RF front-end with an on-chip balun Xu Hua( 徐化 ) 1;, Wang Lei( 王磊 ) 2, Shi Yin( 石寅 ) 1, and Dai Fa Foster( 代伐
More informationChapter 6. Case Study: 2.4-GHz Direct Conversion Receiver. 6.1 Receiver Front-End Design
Chapter 6 Case Study: 2.4-GHz Direct Conversion Receiver The chapter presents a 0.25-µm CMOS receiver front-end designed for 2.4-GHz direct conversion RF transceiver and demonstrates the necessity and
More informationAN increasing number of video and communication applications
1470 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 32, NO. 9, SEPTEMBER 1997 A Low-Power, High-Speed, Current-Feedback Op-Amp with a Novel Class AB High Current Output Stage Jim Bales Abstract A complementary
More informationRadio-Frequency Conversion and Synthesis (for a 115mW GPS Receiver)
Radio-Frequency Conversion and Synthesis (for a 115mW GPS Receiver) Arvin Shahani Stanford University Overview GPS Overview Frequency Conversion Frequency Synthesis Conclusion GPS Overview: Signal Structure
More informationFractional- N PLL with 90 Phase Shift Lock and Active Switched- Capacitor Loop Filter
J. Park, F. Maloberti: "Fractional-N PLL with 90 Phase Shift Lock and Active Switched-Capacitor Loop Filter"; Proc. of the IEEE Custom Integrated Circuits Conference, CICC 2005, San Josè, 21 September
More informationDual-band LNA Design for Wireless LAN Applications. 2.4 GHz LNA 5 GHz LNA Min Typ Max Min Typ Max
Dual-band LNA Design for Wireless LAN Applications White Paper By: Zulfa Hasan-Abrar, Yut H. Chow Introduction Highly integrated, cost-effective RF circuitry is becoming more and more essential to the
More informationRF/IF Terminology and Specs
RF/IF Terminology and Specs Contributors: Brad Brannon John Greichen Leo McHugh Eamon Nash Eberhard Brunner 1 Terminology LNA - Low-Noise Amplifier. A specialized amplifier to boost the very small received
More informationEvaluating and Optimizing Tradeoffs in CMOS RFIC Upconversion Mixer Design. by Dr. Stephen Long University of California, Santa Barbara
Evaluating and Optimizing Tradeoffs in CMOS RFIC Upconversion Mixer Design by Dr. Stephen Long University of California, Santa Barbara It is not easy to design an RFIC mixer. Different, sometimes conflicting,
More informationRF2667. Typical Applications CDMA/FM Cellular Systems CDMA PCS Systems GSM/DCS Systems
RF66 RECEIVE AGC AND DEMODULATOR Typical Applications CDMA/FM Cellular Systems CDMA PCS Systems GSM/DCS Systems TDMA Systems Spread Spectrum Cordless Phones Wireless Local Loop Systems Product Description
More information65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers
65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers Michael Gordon, Terry Yao, Sorin P. Voinigescu University of Toronto March 10 2006, UBC, Vancouver Outline Motivation mm-wave
More informationA 2.4 GHZ RECEIVER IN SILICON-ON-SAPPHIRE MICHAEL PETERS. B.S., Kansas State University, 2009 A REPORT
A 2.4 GHZ RECEIVER IN SILICON-ON-SAPPHIRE by MICHAEL PETERS B.S., Kansas State University, 2009 A REPORT submitted in partial fulfillment of the requirements for the degree MASTER OF SCIENCE Department
More informationDesign and Simulation of 5GHz Down-Conversion Self-Oscillating Mixer
Australian Journal of Basic and Applied Sciences, 5(12): 2595-2599, 2011 ISSN 1991-8178 Design and Simulation of 5GHz Down-Conversion Self-Oscillating Mixer 1 Alishir Moradikordalivand, 2 Sepideh Ebrahimi
More informationVLSI Chip Design Project TSEK06
VLSI Chip Design Project TSEK06 Project Description and Requirement Specification Version 1.1 Project: 100 MHz, 10 dbm direct VCO modulating FM transmitter Project number: 4 Project Group: Name Project
More informationDESIGN ANALYSIS AND COMPARATIVE STUDY OF RF RECEIVER FRONT-ENDS IN 0.18-µM CMOS
International Journal of Electrical and Electronics Engineering Research Vol.1, Issue 1 (2011) 41-56 TJPRC Pvt. Ltd., DESIGN ANALYSIS AND COMPARATIVE STUDY OF RF RECEIVER FRONT-ENDS IN 0.18-µM CMOS M.
More information95GHz Receiver with Fundamental Frequency VCO and Static Frequency Divider in 65nm Digital CMOS
95GHz Receiver with Fundamental Frequency VCO and Static Frequency Divider in 65nm Digital CMOS Ekaterina Laskin, Mehdi Khanpour, Ricardo Aroca, Keith W. Tang, Patrice Garcia 1, Sorin P. Voinigescu University
More informationTHE rapid growth of portable wireless communication
1166 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 32, NO. 8, AUGUST 1997 A Class AB Monolithic Mixer for 900-MHz Applications Keng Leong Fong, Christopher Dennis Hull, and Robert G. Meyer, Fellow, IEEE Abstract
More informationDesign technique of broadband CMOS LNA for DC 11 GHz SDR
Design technique of broadband CMOS LNA for DC 11 GHz SDR Anh Tuan Phan a) and Ronan Farrell Institute of Microelectronics and Wireless Systems, National University of Ireland Maynooth, Maynooth,Co. Kildare,
More informationTHERE is currently a great deal of activity directed toward
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 32, NO. 12, DECEMBER 1997 2097 A 2.5-GHz BiCMOS Transceiver for Wireless LAN s Robert G. Meyer, Fellow IEEE, William D. Mack, Senior Member IEEE, and Johannes
More informationLow-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity
Low-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity Marvin Onabajo Assistant Professor Analog and Mixed-Signal Integrated Circuits (AMSIC) Research Laboratory Dept.
More informationLow-Noise Amplifiers
007/Oct 4, 31 1 General Considerations Noise Figure Low-Noise Amplifiers Table 6.1 Typical LNA characteristics in heterodyne systems. NF IIP 3 db 10 dbm Gain 15 db Input and Output Impedance 50 Ω Input
More informationRF transmitter with Cartesian feedback
UNIVERSITY OF MICHIGAN EECS 522 FINAL PROJECT: RF TRANSMITTER WITH CARTESIAN FEEDBACK 1 RF transmitter with Cartesian feedback Alexandra Holbel, Fu-Pang Hsu, and Chunyang Zhai, University of Michigan Abstract
More information6.776 High Speed Communication Circuits and Systems Lecture 14 Voltage Controlled Oscillators
6.776 High Speed Communication Circuits and Systems Lecture 14 Voltage Controlled Oscillators Massachusetts Institute of Technology March 29, 2005 Copyright 2005 by Michael H. Perrott VCO Design for Narrowband
More informationA 900MHz / 1.8GHz CMOS Receiver for Dual Band Applications*
FA 8.2: S. Wu, B. Razavi A 900MHz / 1.8GHz CMOS Receiver for Dual Band Applications* University of California, Los Angeles, CA This dual-band CMOS receiver for GSM and DCS1800 applications incorporates
More informationIntroduction to Receivers
Introduction to Receivers Purpose: translate RF signals to baseband Shift frequency Amplify Filter Demodulate Why is this a challenge? Interference Large dynamic range required Many receivers must be capable
More informationLow voltage LNA, mixer and VCO 1GHz
DESCRIPTION The is a combined RF amplifier, VCO with tracking bandpass filter and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a
More informationLecture 20: Passive Mixers
EECS 142 Lecture 20: Passive Mixers Prof. Ali M. Niknejad University of California, Berkeley Copyright c 2005 by Ali M. Niknejad A. M. Niknejad University of California, Berkeley EECS 142 Lecture 20 p.
More informationA 7-GHz 1.8-dB NF CMOS Low-Noise Amplifier
852 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 37, NO. 7, JULY 2002 A 7-GHz 1.8-dB NF CMOS Low-Noise Amplifier Ryuichi Fujimoto, Member, IEEE, Kenji Kojima, and Shoji Otaka Abstract A 7-GHz low-noise amplifier
More informationTHE INTERNATIONAL JOURNAL OF SCIENCE & TECHNOLEDGE
THE INTERNATIONAL JOURNAL OF SCIENCE & TECHNOLEDGE Topology Comparison and Design of Low Noise Amplifier for Enhanced Gain Arul Thilagavathi M. PG Student, Department of ECE, Dr. Sivanthi Aditanar College
More informationA widely tunable continuous-time LPF for a direct conversion DBS tuner
Vol.30, No.2 Journal of Semiconductors February 2009 A widely tunable continuous-time LPF for a direct conversion DBS tuner Chen Bei( 陈备 ) 1,, Chen Fangxiong( 陈方雄 ) 1, Ma Heping( 马何平 ) 1, Shi Yin( 石寅 )
More informationEECS 290C: Advanced circuit design for wireless Class Final Project Due: Thu May/02/2019
EECS 290C: Advanced circuit design for wireless Class Final Project Due: Thu May/02/2019 Project: A fully integrated 2.4-2.5GHz Bluetooth receiver. The receiver has LNA, RF mixer, baseband complex filter,
More informationRF9986. Micro-Cell PCS Base Stations Portable Battery Powered Equipment
RF996 CDMA/TDMA/DCS900 PCS Systems PHS 500/WLAN 2400 Systems General Purpose Down Converter Micro-Cell PCS Base Stations Portable Battery Powered Equipment The RF996 is a monolithic integrated receiver
More informationAn All CMOS, 2.4 GHz, Fully Adaptive, Scalable, Frequency Hopped Transceiver
An All CMOS, 2.4 GHz, Fully Adaptive, Scalable, Frequency Hopped Transceiver Farbod Behbahani John Leete Alexandre Kral Shahrzad Tadjpour Karapet Khanoyan Paul J. Chang Hooman Darabi Maryam Rofougaran
More informationDesign of a Low Noise Amplifier using 0.18µm CMOS technology
The International Journal Of Engineering And Science (IJES) Volume 4 Issue 6 Pages PP.11-16 June - 2015 ISSN (e): 2319 1813 ISSN (p): 2319 1805 Design of a Low Noise Amplifier using 0.18µm CMOS technology
More informationAST-GLSRF GLONASS Downconverter
AST-GLSRF GLONASS Downconverter Document History Sl No. Version Changed By Changed On Change Description 1 0.1 Sudhir N S 17-Nov-2014 Created Contents Features Applications General Description Functional
More informationRF2418 LOW CURRENT LNA/MIXER
LOW CURRENT LNA/MIXER RoHS Compliant & Pb-Free Product Package Style: SOIC-14 Features Single 3V to 6.V Power Supply High Dynamic Range Low Current Drain High LO Isolation LNA Power Down Mode for Large
More informationCMOS RFIC Design for Direct Conversion Receivers. Zhaofeng ZHANG Supervisor: Dr. Jack Lau
CMOS RFIC Design for Direct Conversion Receivers Zhaofeng ZHANG Supervisor: Dr. Jack Lau Outline of Presentation Background Introduction Thesis Contributions Design Issues and Solutions A Direct Conversion
More informationHighly linear common-gate mixer employing intrinsic second and third order distortion cancellation
Highly linear common-gate mixer employing intrinsic second and third order distortion cancellation Mahdi Parvizi a), and Abdolreza Nabavi b) Microelectronics Laboratory, Tarbiat Modares University, Tehran
More informationDesign and Analysis of a Transversal Filter RFIC in SiGe Technology
Design and Analysis of a Transversal Filter RFIC in SiGe Technology Vasanth Kakani and Fa Foster Dai Auburn University Editor s note: Filters are a critical component of every high-speed data communications
More informationA Triple-Band Voltage-Controlled Oscillator Using Two Shunt Right-Handed 4 th -Order Resonators
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.16, NO.4, AUGUST, 2016 ISSN(Print) 1598-1657 http://dx.doi.org/10.5573/jsts.2016.16.4.506 ISSN(Online) 2233-4866 A Triple-Band Voltage-Controlled Oscillator
More informationA 2-V 10.7-MHz CMOS Limiting Amplifier/RSSI
1474 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 35, NO. 10, OCTOBER 2000 A 2-V 10.7-MHz CMOS Limiting Amplifier/RSSI Po-Chiun Huang, Yi-Huei Chen, and Chorng-Kuang Wang, Member, IEEE Abstract This paper
More informationCMOS 120 GHz Phase-Locked Loops Based on Two Different VCO Topologies
JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE, VOL. 17, NO. 2, 98~104, APR. 2017 http://dx.doi.org/10.5515/jkiees.2017.17.2.98 ISSN 2234-8395 (Online) ISSN 2234-8409 (Print) CMOS 120 GHz Phase-Locked
More informationLINEAR IC APPLICATIONS
1 B.Tech III Year I Semester (R09) Regular & Supplementary Examinations December/January 2013/14 1 (a) Why is R e in an emitter-coupled differential amplifier replaced by a constant current source? (b)
More informationA High Gain and Improved Linearity 5.7GHz CMOS LNA with Inductive Source Degeneration Topology
A High Gain and Improved Linearity 5.7GHz CMOS LNA with Inductive Source Degeneration Topology Ch. Anandini 1, Ram Kumar 2, F. A. Talukdar 3 1,2,3 Department of Electronics & Communication Engineering,
More informationTuned Radio Frequency Receiver (TRF) The most elementary receiver design, consisting of RF amplifier stages, detector and audio amplifier stages.
Figure 3-1 Simple radio receiver block diagram. Tuned Radio Frequency Receiver (TRF) The most elementary receiver design, consisting of RF amplifier stages, detector and audio amplifier stages. Jeffrey
More information1GHz low voltage LNA, mixer and VCO
DESCRIPTION The is a combined RF amplifier, VCO with tracking bandpass filter and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a
More informationDesign and Simulation Study of Active Balun Circuits for WiMAX Applications
Design and Simulation Study of Circuits for WiMAX Applications Frederick Ray I. Gomez 1,2,*, John Richard E. Hizon 2 and Maria Theresa G. De Leon 2 1 New Product Introduction Department, Back-End Manufacturing
More informationDesign of the Low Phase Noise Voltage Controlled Oscillator with On-Chip Vs Off- Chip Passive Components.
3 rd International Bhurban Conference on Applied Sciences and Technology, Bhurban, Pakistan. June 07-12, 2004 Design of the Low Phase Noise Voltage Controlled Oscillator with On-Chip Vs Off- Chip Passive
More informationA 1.7-to-2.2GHz Full-Duplex Transceiver System with >50dB Self-Interference Cancellation over 42MHz Bandwidth
A 1.7-to-2.2GHz Full-Duplex Transceiver System with >50dB Self-Interference Cancellation Tong Zhang, Ali Najafi, Chenxin Su, Jacques C. Rudell University of Washington, Seattle Feb. 8, 2017 International
More informationA 1.9GHz Single-Chip CMOS PHS Cellphone
A 1.9GHz Single-Chip CMOS PHS Cellphone IEEE JSSC, Vol. 41, No.12, December 2006 William Si, Srenik Mehta, Hirad Samavati, Manolis Terrovitis, Michael Mack, Keith Onodera, Steve Jen, Susan Luschas, Justin
More informationReceiver Architecture
Receiver Architecture Receiver basics Channel selection why not at RF? BPF first or LNA first? Direct digitization of RF signal Receiver architectures Sub-sampling receiver noise problem Heterodyne receiver
More informationDocument Version Publisher s PDF, also known as Version of Record (includes final page, issue and volume numbers)
A 2V Iductorless Receiver Front-End for Multi-Standard Wireless Applications Vidojkovic, V; Sanduleanu, MAT; van der Tang, JD; Baltus, PGM; van Roermund, AHM Published in: IEEE Radio and Wireless Symposium,
More informationA 1.6-to-3.2/4.8 GHz Dual Modulus Injection-Locked Frequency Multiplier in
RTU1D-2 LAICS A 1.6-to-3.2/4.8 GHz Dual Modulus Injection-Locked Frequency Multiplier in 0.18µm CMOS L. Zhang, D. Karasiewicz, B. Ciftcioglu and H. Wu Laboratory for Advanced Integrated Circuits and Systems
More informationLF to 4 GHz High Linearity Y-Mixer ADL5350
LF to GHz High Linearity Y-Mixer ADL535 FEATURES Broadband radio frequency (RF), intermediate frequency (IF), and local oscillator (LO) ports Conversion loss:. db Noise figure:.5 db High input IP3: 25
More informationDesign of a Broadband HEMT Mixer for UWB Applications
Indian Journal of Science and Technology, Vol 9(26), DOI: 10.17485/ijst/2016/v9i26/97253, July 2016 ISSN (Print) : 0974-6846 ISSN (Online) : 0974-5645 Design of a Broadband HEMT Mixer for UWB Applications
More informationDesign for MOSIS Education Program
Design for MOSIS Education Program (Research) T46C-AE Project Title Low Voltage Analog Building Block Prepared by: C. Durisety, S. Chen, B. Blalock, S. Islam Institution: Department of Electrical and Computer
More informationNoise Reduction in Transistor Oscillators: Part 3 Noise Shifting Techniques. cross-coupled. over other topolo-
From July 2005 High Frequency Electronics Copyright 2005 Summit Technical Media Noise Reduction in Transistor Oscillators: Part 3 Noise Shifting Techniques By Andrei Grebennikov M/A-COM Eurotec Figure
More informationRF Integrated Circuits
Introduction and Motivation RF Integrated Circuits The recent explosion in the radio frequency (RF) and wireless market has caught the semiconductor industry by surprise. The increasing demand for affordable
More informationECE1352. Term Paper Low Voltage Phase-Locked Loop Design Technique
ECE1352 Term Paper Low Voltage Phase-Locked Loop Design Technique Name: Eric Hu Student Number: 982123400 Date: Nov. 14, 2002 Table of Contents Abstract pg. 04 Chapter 1 Introduction.. pg. 04 Chapter 2
More informationDESIGN AND VERIFICATION OF ANALOG PHASE LOCKED LOOP CIRCUIT
DESIGN AND VERIFICATION OF ANALOG PHASE LOCKED LOOP CIRCUIT PRADEEP G CHAGASHETTI Mr. H.V. RAVISH ARADHYA Department of E&C Department of E&C R.V.COLLEGE of ENGINEERING R.V.COLLEGE of ENGINEERING Bangalore
More informationCHAPTER 3. Instrumentation Amplifier (IA) Background. 3.1 Introduction. 3.2 Instrumentation Amplifier Architecture and Configurations
CHAPTER 3 Instrumentation Amplifier (IA) Background 3.1 Introduction The IAs are key circuits in many sensor readout systems where, there is a need to amplify small differential signals in the presence
More informationMP 4.2 A DECT Transceiver Chip Set Using SiGe Technology
MP 4.2 A DECT Transceiver Chip Set Using SiGe Technology Matthias Bopp, Martin Alles, Meinolf Arens, Dirk Eichel, Stephan Gerlach, Rainer Götzfried, Frank Gruson, Michael Kocks, Gerald Krimmer, Reinhard
More informationHot Topics and Cool Ideas in Scaled CMOS Analog Design
Engineering Insights 2006 Hot Topics and Cool Ideas in Scaled CMOS Analog Design C. Patrick Yue ECE, UCSB October 27, 2006 Slide 1 Our Research Focus High-speed analog and RF circuits Device modeling,
More informationLM2900 LM3900 LM3301 Quad Amplifiers
LM2900 LM3900 LM3301 Quad Amplifiers General Description The LM2900 series consists of four independent dual input internally compensated amplifiers which were designed specifically to operate off of a
More informationAST-GPSRF. GPS / Galileo RF Downconverter GENERAL DESCRIPTION FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM. Preliminary Technical Data
FEATURES Single chip GPS / Galileo downconverter GPS L1 band C/A code (1575.42 MHz) receiver GALILEO L1 band OS code (1575.42 MHz) receiver 2.7 V to 3.3 V power supply On-chip LNA On-chip PLL including
More informationDESIGN OF MULTIPLYING DELAY LOCKED LOOP FOR DIFFERENT MULTIPLYING FACTORS
DESIGN OF MULTIPLYING DELAY LOCKED LOOP FOR DIFFERENT MULTIPLYING FACTORS Aman Chaudhary, Md. Imtiyaz Chowdhary, Rajib Kar Department of Electronics and Communication Engg. National Institute of Technology,
More informationA-1.8V Operation Switchable Direct-Conversion Receiver with sub-harmonic mixer
, pp.94-98 http://dx.doi.org/1.14257/astl.216.135.24 A-1.8V Operation Switchable Direct-Conversion Receiver with sub-harmonic mixer Mi-young Lee 1 1 Dept. of Electronic Eng., Hannam University, Ojeong
More informationA SiGe 6 Modulus Prescaler for a 60 GHz Frequency Synthesizer
A SiGe 6 Modulus Prescaler for a 6 GHz Frequency Synthesizer Noorfazila Kamal,YingboZhu, Said F. Al-Sarawi, Neil H.E. Weste,, and Derek Abbott The School of Electrical & Electronic Engineering, University
More informationLM13600 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers
LM13600 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers General Description The LM13600 series consists of two current controlled transconductance amplifiers each with
More informationRF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment
RF233 AMPLIFIER Typical Applications Broadband, Low Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low Power Applications Broadband Test Equipment Product Description
More information/$ IEEE
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS, VOL. 53, NO. 11, NOVEMBER 2006 1205 A Low-Phase Noise, Anti-Harmonic Programmable DLL Frequency Multiplier With Period Error Compensation for
More informationA 2.6GHz/5.2GHz CMOS Voltage-Controlled Oscillator*
WP 23.6 A 2.6GHz/5.2GHz CMOS Voltage-Controlled Oscillator* Christopher Lam, Behzad Razavi University of California, Los Angeles, CA New wireless local area network (WLAN) standards have recently emerged
More informationAn eighth order channel selection filter for low-if and zero-if DVB tuner applications
Vol. 30, No. 11 Journal of Semiconductors November 009 An eighth order channel selection filter for low-if and zero-if DVB tuner applications Zou Liang( 邹亮 ) 1, Liao Youchun( 廖友春 ), and Tang Zhangwen(
More information1-13GHz Wideband LNA utilizing a Transformer as a Compact Inter-stage Network in 65nm CMOS
-3GHz Wideband LNA utilizing a Transformer as a Compact Inter-stage Network in 65nm CMOS Hyohyun Nam and Jung-Dong Park a Division of Electronics and Electrical Engineering, Dongguk University, Seoul E-mail
More informationPackage and Pin Assignment SSOP-6 (0.64mm pitch) OSCIN OSCOUT TXEN 3 VSS 4 TXOUT 5 VSS 6 7 MODIN 8 HiMARK SW DO RES RESB VREFP VSS Symbol
Low Power ASK Transmitter IC HiMARK Technology, Inc. reserves the right to change the product described in this datasheet. All information contained in this datasheet is subject to change without prior
More informationRF CMOS 0.5 µm Low Noise Amplifier and Mixer Design
RF CMOS 0.5 µm Low Noise Amplifier and Mixer Design By VIKRAM JAYARAM, B.Tech Signal Processing and Communication Group & UMESH UTHAMAN, B.E Nanomil FINAL PROJECT Presented to Dr.Tim S Yao of Department
More informationDESCRIPTIO FEATURES APPLICATIO S. LT GHz to 2.7GHz Receiver Front End TYPICAL APPLICATIO
1.GHz to 2.GHz Receiver Front End FEATURES 1.V to 5.25V Supply Dual LNA Gain Setting: +13.5dB/ db at Double-Balanced Mixer Internal LO Buffer LNA Input Internally Matched Low Supply Current: 23mA Low Shutdown
More informationSA5209 Wideband variable gain amplifier
INTEGRATED CIRCUITS Replaces data of 99 Aug IC7 Data Handbook 997 Nov 7 Philips Semiconductors DESCRIPTION The represents a breakthrough in monolithic amplifier design featuring several innovations. This
More informationA 24-GHz Quadrature Receiver Front-end in 90-nm CMOS
A 24GHz Quadrature Receiver Frontend in 90nm CMOS Törmänen, Markus; Sjöland, Henrik Published in: Proc. 2009 IEEE Asia Pacific Microwave Conference Published: 20090101 Link to publication Citation for
More informationFully integrated UHF RFID mobile reader with power amplifiers using System-in-Package (SiP)
Fully integrated UHF RFID mobile reader with power amplifiers using System-in-Package (SiP) Hyemin Yang 1, Jongmoon Kim 2, Franklin Bien 3, and Jongsoo Lee 1a) 1 School of Information and Communications,
More information