Field-Effect Transistor
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1 Module: Electronics Module Number: 610/6501- Philadelphia University Faculty of Engineering Communication and Electronics Engineering Field-Effect Transistor ntroduction FETs (Field-Effect Transistors) are much like BJTs (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices mpedance matching circuits Differences: FETs are voltage controlled devices whereas BJTs are current controlled devices. FETs also have a higher input impedance, but BJTs have higher gains. FETs are less sensitive to temperature variations and because of there construction they are more easily integrated on Cs. FETs are also generally more static sensitive than BJTs. FET Types JFET Junction Field-Effect Transistor MOSFET Metal-Oxide Field-Effect Transistor D-MOSFET Depletion MOSFET E-MOSFET Enhancement MOSFET JFET JFET Construction There are two types of JFETs: n-channel (The n-channel is more widely used.) p-channel There are three terminals: Drain (D) Source (S) are connected to the n-channel Gate (G) is connected to the p-type material
2 Module: Electronics Module Number: 610/6501- Basic Operation of a JFET UJFET operation can be compared to a water spigot. The source of water pressure is the accumulation of electrons at the negative pole of the drain-source voltage. The drain of water is the electron deficiency (or holes) at the positive pole of the applied voltage. The control (gate) of flow of water is the gate voltage that controls the width of the n-channel and, therefore, the flow of charges from source to drain. JFET Operating Characteristics Three things happen when VGS 0 and VDS is increased from 0 to a more positive voltage The depletion region between p-gate and n- channel increases as electrons from n- channel combine with holes from p-gate. ncreasing the depletion region, decreases the size of the n-channel which increases the resistance of the n-channel. Even though the n-channel resistance is increasing, the current (RDR) from source to drain through the n-channel is increasing. This is because VRDSR is increasing. f VRGSR 0 and VRDSR is further increased to a more positive voltage, then the depletion zone gets so large that it pinches off the n-channel. This suggests that the current in the n-channel (RDR) would drop to 0A, but it does just the opposite as VRDSR increases, so does RDR.
3 is increases Module: Electronics Module Number: 610/6501- At the pinch-off point: Any further increase in VRGSR does not produce any increase in RDR. VRGSR at pinchoff is denoted as Vp. RDR at saturation or maximum. t is referred to as RDSSR. The ohmic value of the channel is maximum. UAs VGS becomes more negative, the depletion region increases. The JFET experiences pinch-off at a lower voltage (Vp). D decreases (D < DSS) even though VDS is increased. Eventually D reaches 0A. VGS at this point is called Vp or VGS(off).. Also note that at high levels of VRDSR the JFET reaches a breakdown situation. RDR uncontrollably if VRDSR > VRDSmaxR. The region to the left of the pinch-off point is called the ohmic region. The JFET can be used as a variable resistor, where VRGSR controls the drain-source resistance (rrdr). As VRGSR becomes more negative, the resistance (rrdr) increases. ro rd VGS 1 V P
4 URDRU for (VRGS(off)R) (output) (input) (output). Module: Electronics Module Number: 610/6501- The transfer characteristic of input-to-output is not as straightforward in a JFET as it is in a BJT. n a BJT, β indicates the relationship between RBR and RCR n a JFET, the relationship of VRGSR (input) and RDR is a little more complicated: JFET Transfer Curve D V DSS 1 V GS P UThis graph shows the value of a given value of VURUGSURU. Using RDSSR and Vp (VRGSR(off)) values found in a specification sheet, the transfer curve can be plotted according to these three steps: Step 1 Solving for VRGSR 0V, VGS D DSS 1 D V P Step Solving for VRGSR VRpR RDR 0A Step 3 Solving for VGS 0V to Vp DSS Fig Transfer curve for Example 6.1. Fig Example 7.3.
5 Module: Electronics Module Number: 610/6501- Fig. 7.5 Example 7.5. Fig. 7.6 Determining the Q-point for the network of Fig. 7.5.
6 increases < Module: Electronics Module Number: 610/6501- MOSFET MOSFETs have characteristics similar to JFETs and additional characteristics that make then very useful. There are two types of MOSFETs: Depletion-Type Enhancement-Type The drain (D) and source (S) connect to the to n- doped regions. These n-doped regions are connected via an n-channel. This n-channel is connected to the gate (G) via a thin insulating layer of SiO. The n-doped material lies on a p-doped substrate that may have an additional terminal connection called substrate (SS). A depletion-type MOSFET can operate in two modes: Depletion mode Enhancement mode Depletion Mode: The characteristics are similar to a JFET. When VRGSR 0V, RDR RDSS When VRGSR < 0V, RDR RDSS The formula used to plot the transfer curve still applies: VGS D DSS 1 V P Enhancement Mode: VRGSR > 0V above RDSS RDR The formula used to plot the transfer curve still applies: VGS D DSS 1 V P
7 Module: Electronics Module Number: 610/6501- Enhancement-Type MOSFET Construction The drain (D) and source (S) connect to the n- doped regions. These n-doped regions are connected via an n-channel The gate (G) connects to the p-doped substrate via a thin insulating layer of SiO There is no channel The n-doped material lies on a p-doped substrate that may have an additional terminal connection called the substrate (SS) The enhancement-type MOSFET only operates in the enhancement mode. VGS is always positive As VGS increases, D increases As VGS is kept constant and VDS is increased, then D saturates (DSS) and the saturation level, VDSsat is reached
8 Module: Electronics Module Number: 610/6501-
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