65-nm CMOS, W-band Receivers for Imaging Applications
|
|
- Clifford Oliver
- 5 years ago
- Views:
Transcription
1 65-nm CMOS, W-band Receivers for Imaging Applications Keith Tang Mehdi Khanpour Patrice Garcia* Christophe Garnier* Sorin Voinigescu University of Toronto, *STMicroelectronics University of Toronto 27 1
2 Table of Content Motivation Circuit Schematics Fabrication Measurement Results Conclusion University of Toronto 27 2
3 Motivation Investigation of W-band receivers in 65-nm GP CMOS CMOS might provide alternatives to III-V and SiGe technology in imaging arrays: Broadband (multi-ghz) Low noise Low power Small area Comparison of two LNA feedback topologies Series-series feedback with inductor Shunt-series feedback with transformer University of Toronto 27 3
4 Receiver Block Diagram University of Toronto 27 4
5 LNA Schematic Inductive (series-series) feedback LNA Input matched by L G and L S R{ Z } = 2πf L + R + Noise impedance matched by transistor sizing and biasing IN T S G R S University of Toronto 27 5
6 LNA Schematic (2) Transformer (shunt-series) feedback LNA LP Input matched by L P, L S and M R { Z IN}, M = k LPL gm M Noise impedance matched by transistor sizing and biasing S University of Toronto 27 6
7 LNA Simulation [db] ind-feedback -5-5 [db] xfmr-feedback S 21 S 11 Γ opt S 21 S 11 Γ opt NF 5 NF MIN NF 5 NF MIN FREQUENCY [GHz] FREQUENCY [GHz] S 11, Γ opt < -1 db from 74-1 GHz for both designs University of Toronto 27 7
8 Mixer Schematic Gilbert cell mixer with inductive broad-banding University of Toronto 27 8
9 Fabrication 65-nm GP/LP digital CMOS process 7 metal layers GP n-mosfets (8 6nm 1μm) with gate contacted on one side: f T /f MAX =17 GHz/2 GHz at V DS =.7 V GP MOSFETs 3% faster than LP MOSFETs and require lower V GS and V DS lower power Gate leakage does not affect mm-wave performance University of Toronto 27 9
10 LNA breakouts Die Photos XFMR IND IND-feedback XFMR-feedback 49 um x 3um (pad) 12 um x 17 um (core) University of Toronto 27 1
11 Mixer breakout Die Photo LO IN IF P IF N RF IN 47 um x 56 um (pad) 19um x 16 um (core) University of Toronto 27 11
12 Receiver Die Photos IND-feedback Receiver XFMR-feedback Receiver 46 um x 5 um (pad) 16 um x 37 um (core) University of Toronto 27 12
13 Meas. LNA 1 st Spin S 21, S 11 (db) ind-feedback S 21, S 11 (db) xfmr-feedback S 21 (sim.) -2 S 21 (meas.) -25 S 11 (sim.) -25 S 11 (meas.) FREQUENCY (GHz) Requires 2.2 V for 8 9 db gain 4 5 db below simulation -2 S 21 (sim.) -2 S 21 (meas.) -25 S 11 (sim.) -25 S 11 (meas.) FREQUENCY (GHz) University of Toronto 27 13
14 Measurements for 2 nd Spin with Modified Layout Series resistance in ground metallization of LNA was found in the first spin. A second spin of the design was fabricated with: Wider metal lines in ground mesh at top level Increased number of vias (even between M5 and M6) LNA inductance values adjusted to 8 GHz University of Toronto 27 14
15 22 2 Meas. LNA 2 nd Spin =1.8V (1 st spin) =2.2V (1 st spin) 22 2 =1.8V (1 st spin) =2.2V (1 st spin) =1.2V (2 nd spin) =1.5V (2 nd spin) =1.8V (2 nd spin) =1.2V (2 nd spin) =1.5V (2 nd spin) =1.8V (2 nd spin) GAIN [db] 12 1 GAIN [db] ind-feedback FREQUENCY [GHz] FREQUENCY [GHz] Measured 1.5 V = 13 db 2 xfmr-feedback University of Toronto 27 15
16 2 nd Spin LNA meas. vs sims S 21, S 11 (db) ind-feedback S 21, S 11 (db) xfmr-feedback S 21 (sim.) -3 S 11 (sim.) -3 S 21 (meas.) S 11 (meas.) FREQUENCY (GHz) S 21 (sim.) -3 S 11 (sim.) -3 S 21 (meas.) S 11 (meas.) FREQUENCY (GHz) Meas. = 1.5 V is 1 2 db below sims. S 11 < -2 db from 8 9 GHz (xfmr-feedback) University of Toronto 27 16
17 [db] Meas. Transformer S-params S 11 S 22 S MAG FREQUENCY [GHz] MAG (loss) < -2 db between GHz University of Toronto 27 17
18 Meas. Mixer Conversion Gain 9 CONVERSION GAIN [db] =1.5V =1.8V 1 =1.8V (sim.) RF FREQUENCY [GHz] IF = 1GHz 1 2 db below simulation University of Toronto 27 18
19 Meas. Mixer NF DSB IF = 1GHz NOISE FIGURE [db] RF FREQUENCY [GHz] NF MIXER, =1.5V NF MIXER, =1.8V Includes ~2 db transformer loss Lowest NF DSB mixer at 8 9 GHz in silicon University of Toronto 27 19
20 Meas. Rx Gain, NF DSB vs IF CONVERSION GAIN [db] =1.2V =1.5V =1.8V IF FREQUENCY [GHz] NF DSB [db] =1.2V =1.5V =1.8V IF FREQUENCY [GHz] XFMR-feedback RCVR NF DSB ~7 8 db, 89 GHz University of Toronto 27 2
21 Meas. Rx Gain, NF DSB vs RF 15 IF = 1GHz 2 1 GAIN, NF [db] S 11 [db] GAIN RCVR NF DSB RCVR -3 S RF FREQUENCY [GHz] 3dB-bandwidth: GHz University of Toronto 27 21
22 Receiver P 1dB GAIN [db] LO = 75GHz RF = 8GHz P 1dB = -16.2dBm P IN [dbm] 75 GHz due to equipment limitation 5-5 P OUT [dbm] University of Toronto 27 22
23 Estimated LNA NF [db] GAIN, =1.5V 4 GAIN, =1.8V 2 NF 5, =1.5V 2 NF 5, =1.8V FREQUENCY [GHz] XFMR-feedback LNA G F LNA LNA = G = F RCVR RCVR G F G MIXER MIXER LNA 1 LNA gain peaks at frequency higher than measured (output pad capacitance removed) LNA NF 5 ~6 7 db University of Toronto 27 23
24 Summary of Results 1 st Spin [V] P diss LNA IF Buffer Receiver Gain P diss P diss Gain NF S 11 [mw] [db] [mw] [mw] [db] [db] [db] < ( GHz) 2 nd Spin < ( GHz) Dramatic increase in performance just with better top-level ground mesh and vias University of Toronto ~ ½ of P diss used in IF buffer to drive 5Ω off-chip
25 Conclusion GHz receiver with 8 db NF and 13 db gain demonstrated in 65 nm GP CMOS technology. Inductive-feedback and transformer-feedback LNA topologies presented: Similar performance achieved by different matching procedures Layout style significantly affects circuit performance. Post-layout simulation at top-level, with ground mesh must be carried out. University of Toronto 27 25
26 Acknowledgement Katya Laskin for measurements on the second-spin Alex Tomkins for inductor and transformer measurements Jaro Pristupa and CMC for CAD tools Bernard Sautreuil of STM for facilitating the technology access CITO for funding ECTI, NSERC, CFI and OIF for equipment University of Toronto 27 26
27 2 nd spin LNA Meas. Gain S 11, S 21 [db] S 11, S 21 [db] =1.2V -2-2 =1.2V =1.5V =1.8V =1.5V =1.8V FREQUENCY [GHz] FREQUENCY [GHz] IND-feedback LNA XFMR-feedback LNA S 11 matched at 93 GHz for inductive-feedback LNA (increase L G ) University of Toronto 27 27
28 CONVERSION GAIN [db] Receiver vs LO Power LO = 85GHz RF = 84.5GHz ind-feedback LO POWER [dbm] =1.8V =2.V =2.2V CONVERSION GAIN [db] LO = 85GHz RF = 84.5GHz xfmr-feedback =1.8V =2.V =2.2V =1.2V (2 nd spin) =1.5V (2 nd spin) =1.8V (2 nd spin) LO POWER [dbm] Requires 2 3 dbm (1 st spin) and > 5 dbm (2 nd spin) LO power University of Toronto 27 28
29 5 Receiver P 1dB LO=77GHz, RF=75GHz LO=77GHz, RF=75GHz P OUT [dbm] -1 6 GAIN [db] P OUT [dbm] -1 6 GAIN [db] P IN [dbm] P IN [dbm] IND-feedback Receiver XFMR-feedback Receiver RF at 75 GHz due to equipment limitation University of Toronto 27 29
95GHz Receiver with Fundamental Frequency VCO and Static Frequency Divider in 65nm Digital CMOS
95GHz Receiver with Fundamental Frequency VCO and Static Frequency Divider in 65nm Digital CMOS Ekaterina Laskin, Mehdi Khanpour, Ricardo Aroca, Keith W. Tang, Patrice Garcia 1, Sorin P. Voinigescu University
More informationMethodology for Simultaneous Noise and Impedance Matching in W-band LNAs
Methodology for Simultaneous Noise and Impedance Matching in W-band LNAs Sean T. Nicolson and Sorin Voinigescu University of Toronto sorinv@eecg.toronto.edu CSICS-006, San Antonio, November 15, 006 1 Outline
More information65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers
65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers Michael Gordon, Terry Yao, Sorin P. Voinigescu University of Toronto March 10 2006, UBC, Vancouver Outline Motivation mm-wave
More informationDesign Methodology and Applications of SiGe BiCMOS Cascode Opamps with up to 37-GHz Unity Gain Bandwidth
Design Methodology and Applications of SiGe BiCMOS Cascode Opamps with up to 37-GHz Unity Gain Bandwidth S.P. Voinigescu, R. Beerkens*, T.O. Dickson, and T. Chalvatzis University of Toronto *STMicroelectronics,
More informationAn Inductor-Based 52-GHz 0.18 µm SiGe HBT Cascode LNA with 22 db Gain
An Inductor-Based 52-GHz 0.18 µm SiGe HBT Cascode LNA with 22 db Gain Michael Gordon, Sorin P. Voinigescu University of Toronto Toronto, Ontario, Canada ESSCIRC 2004, Leuven, Belgium Outline Motivation
More informationSystem-on-Chip Design Beyond 50 GHz
System-on-Chip Design Beyond 50 GHz Sorin Voinigescu, Michael Gordon, Chihou Lee, Terry Yao, Alain Mangan, and Ken Yau University of Toronto July 20, 2005 1 Outline Motivation Optimal sizing of active
More informationW-BAND FRONT-END INTEGRATED CIRCUITS IN 65NM CMOS TECHNOLOGY
W-BAND FRONT-END INTEGRATED CIRCUITS IN 65NM CMOS TECHNOLOGY BY MEHDI KHANPOUR A THESIS SUBMITTED IN CONFORMITY WITH THE REQUIREMENTS FOR THE DEGREE OF MASTER OF APPLIED SCIENCE GRADUATE DEPARTMENT OF
More informationA 30-GS/sec Track and Hold Amplifier in 0.13-µm CMOS Technology Shahriar Shahramian Sorin P. Voinigescu Anthony Chan Carusone
A 30-GS/sec Track and Hold Amplifier in 0.13-µm CMOS Technology Shahriar Shahramian Sorin P. Voinigescu Anthony Chan Carusone Department of Electrical & Computer Eng. University of Toronto Canada Introduction
More informationSP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver
SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver Arvin R. Shahani, Derek K. Shaeffer, Thomas H. Lee Stanford University, Stanford, CA At submicron channel lengths, CMOS is
More informationA Wideband Single-balanced Down-mixer for the 60 GHz Band in 65 nm CMOS
A Wideband Single-balanced Down-mixer for the GHz Band in 5 nm CMOS Michael Kraemer, Mariano Ercoli, Daniela Dragomirescu, Robert Plana To cite this version: Michael Kraemer, Mariano Ercoli, Daniela Dragomirescu,
More informationDesign of a Low Noise Amplifier using 0.18µm CMOS technology
The International Journal Of Engineering And Science (IJES) Volume 4 Issue 6 Pages PP.11-16 June - 2015 ISSN (e): 2319 1813 ISSN (p): 2319 1805 Design of a Low Noise Amplifier using 0.18µm CMOS technology
More informationA GSM Band Low-Power LNA 1. LNA Schematic
A GSM Band Low-Power LNA 1. LNA Schematic Fig1.1 Schematic of the Designed LNA 2. Design Summary Specification Required Simulation Results Peak S21 (Gain) > 10dB >11 db 3dB Bandwidth > 200MHz (
More informationCHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN
93 CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 4.1 INTRODUCTION Ultra Wide Band (UWB) system is capable of transmitting data over a wide spectrum of frequency bands with low power and high data
More information1-13GHz Wideband LNA utilizing a Transformer as a Compact Inter-stage Network in 65nm CMOS
-3GHz Wideband LNA utilizing a Transformer as a Compact Inter-stage Network in 65nm CMOS Hyohyun Nam and Jung-Dong Park a Division of Electronics and Electrical Engineering, Dongguk University, Seoul E-mail
More informationtechniques, and gold metalization in the fabrication of this device.
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:
More informationUp to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-1 Features Low Noise Figure: 1.6 db Typical at 3. db Typical at. GHz High Associated Gain: 1.5 db Typical at 1.5 db Typical at. GHz
More informationLow-Noise Amplifiers
007/Oct 4, 31 1 General Considerations Noise Figure Low-Noise Amplifiers Table 6.1 Typical LNA characteristics in heterodyne systems. NF IIP 3 db 10 dbm Gain 15 db Input and Output Impedance 50 Ω Input
More informationA Three-Stage 60GHz CMOS LNA Using Dual Noise-Matching Technique for 5dB NF
A Three-Stage 60GHz CMOS LNA Using Dual Noise-Matching Technique for 5dB NF Ning Li 1, Kenichi Okada 1, Toshihide Suzuki 2, Tatsuya Hirose 2 and Akira 1 1. Tokyo Institute of Technology, Japan 2. Advanced
More informationMillimeter-Wave Amplifiers for E- and V-band Wireless Backhaul Erik Öjefors Sivers IMA AB
Millimeter-Wave Amplifiers for E- and V-band Wireless Backhaul Erik Öjefors Sivers IMA AB THz-Workshop: Millimeter- and Sub-Millimeter-Wave circuit design and characterization 26 September 2014, Venice
More informationDESIGN OF 3 TO 5 GHz CMOS LOW NOISE AMPLIFIER FOR ULTRA-WIDEBAND (UWB) SYSTEM
Progress In Electromagnetics Research C, Vol. 9, 25 34, 2009 DESIGN OF 3 TO 5 GHz CMOS LOW NOISE AMPLIFIER FOR ULTRA-WIDEBAND (UWB) SYSTEM S.-K. Wong and F. Kung Faculty of Engineering Multimedia University
More informationDual-band LNA Design for Wireless LAN Applications. 2.4 GHz LNA 5 GHz LNA Min Typ Max Min Typ Max
Dual-band LNA Design for Wireless LAN Applications White Paper By: Zulfa Hasan-Abrar, Yut H. Chow Introduction Highly integrated, cost-effective RF circuitry is becoming more and more essential to the
More informationA 2.4GHz Cascode CMOS Low Noise Amplifier
A 2.4GHz Cascode CMOS Low Noise Amplifier Gustavo Campos Martins, Fernando Rangel de Sousa Federal University of Santa Catarina (UFSC) Integrated Circuits Laboratory (LCI) August 31, 2012 G. C. Martins,
More informationDesign and Scaling of W-Band SiGe BiCMOS VCOs
Design and Scaling of W-Band SiGe BiCMOS VCOs S. T. Nicolson 1, K.H.K Yau 1, P. Chevalier 2, A. Chantre 2, B. Sautreuil 2, K.A. Tang 1, and S. P. Voinigescu 1 1) Edward S. Rogers, Sr. Dept. of Electrical
More informationSiGe BiCMOS AND CMOS TRANSCEIVER BLOCKS FOR AUTOMOTIVE RADAR AND IMAGING APPLICATIONS IN THE GHz RANGE
SiGe BiCMOS AND CMOS TRANSCEIVER BLOCKS FOR AUTOMOTIVE RADAR AND IMAGING APPLICATIONS IN THE 80-160 GHz RANGE S.P. Voinigescu 1, S. Nicolson 1, E. Laskin 1, K. Tang 1 and P. Chevalier 2 1) ECE Dept., University
More informationQuiz2: Mixer and VCO Design
Quiz2: Mixer and VCO Design Fei Sun and Hao Zhong 1 Question1 - Mixer Design 1.1 Design Criteria According to the specifications described in the problem, we can get the design criteria for mixer design:
More informationQuadrature GPS Receiver Front-End in 0.13μm CMOS: The QLMV cell
1 Quadrature GPS Receiver Front-End in 0.13μm CMOS: The QLMV cell Yee-Huan Ng, Po-Chia Lai, and Jia Ruan Abstract This paper presents a GPS receiver front end design that is based on the single-stage quadrature
More informationHighly linear common-gate mixer employing intrinsic second and third order distortion cancellation
Highly linear common-gate mixer employing intrinsic second and third order distortion cancellation Mahdi Parvizi a), and Abdolreza Nabavi b) Microelectronics Laboratory, Tarbiat Modares University, Tehran
More informationAn 8mA, 3.8dB NF, 40dB Gain CMOS Front-End for GPS Applications
An 8mA, 3.8dB NF, 40dB Gain CMOS Front-End for GPS Applications F. Svelto S. Deantoni, G. Montagna R. Castello Dipartimento di Ingegneria Studio di Microelettronica Dipartimento di Elettronica Università
More informationTexas A&M University Electrical Engineering Department ECEN 665. Laboratory #3: Analysis and Simulation of a CMOS LNA
Texas A&M University Electrical Engineering Department ECEN 665 Laboratory #3: Analysis and Simulation of a CMOS LNA Objectives: To learn the use of s-parameter and periodic steady state (pss) simulation
More informationUp to 6 GHz Medium Power Silicon Bipolar Transistor. Technical Data AT Plastic Package
Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-286 Features High Output Power: 2.5 dbm Typical P 1 db at 2. GHz High Gain at 1 db Compression: 13.5 db Typical G 1 db at 2. GHz Low
More informationHIGH-GAIN CMOS LOW NOISE AMPLIFIER FOR ULTRA WIDE-BAND WIRELESS RECEIVER
Progress In Electromagnetics Research C, Vol. 7, 183 191, 2009 HIGH-GAIN CMOS LOW NOISE AMPLIFIER FOR ULTRA WIDE-BAND WIRELESS RECEIVER A. Dorafshan and M. Soleimani Electrical Engineering Department Iran
More informationLow-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity
Low-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity Marvin Onabajo Assistant Professor Analog and Mixed-Signal Integrated Circuits (AMSIC) Research Laboratory Dept.
More informationABabcdfghiejklStanford University
Design Methodology or Power-Constrained Low Noise RF Circuits Jung-Suk Goo, Hee-Tae Ahn, Donald J Ladwig, Zhiping Yu, Thomas H Lee, and Robert W Dutton, Stanord University, Stanord CA National Semiconductor,
More informationAnalysis and design of a V-band low-noise amplifier in 90 nm CMOS for 60 GHz applications
LETTER IEICE Electronics Express, Vol.12, No.1, 1 10 Analysis and design of a V-band low-noise amplifier in 90 nm CMOS for 60 GHz applications Zhenxing Yu 1a), Jun Feng 1, Yu Guo 2, and Zhiqun Li 1 1 Institute
More informationMm-Wave Silicon Sensors. and Active Tags
Mm-Wave Silicon Sensors and Active Tags Sorin Voinigescu November 21, 2014 1 Outline Introduction Range (distance) sensors Passive imaging sensors Active 80-GHz tag Technology options Conclusions 2 Why
More informationChapter 6. Case Study: 2.4-GHz Direct Conversion Receiver. 6.1 Receiver Front-End Design
Chapter 6 Case Study: 2.4-GHz Direct Conversion Receiver The chapter presents a 0.25-µm CMOS receiver front-end designed for 2.4-GHz direct conversion RF transceiver and demonstrates the necessity and
More informationA Low Power Single Ended Inductorless Wideband CMOS LNA with G m Enhancement and Noise Cancellation
2017 International Conference on Electronic, Control, Automation and Mechanical Engineering (ECAME 2017) ISBN: 978-1-60595-523-0 A Low Power Single Ended Inductorless Wideband CMOS LNA with G m Enhancement
More informationW-BAND PASSIVE AND ACTIVE CIRCUITS IN 65-NM BULK CMOS FOR PASSIVE IMAGING APPLICATIONS. Alexander Tomkins
W-BAND PASSIVE AND ACTIVE CIRCUITS IN 65-NM BULK CMOS FOR PASSIVE IMAGING APPLICATIONS by Alexander Tomkins A thesis submitted in conformity with the requirements for the degree of Master of Applied Science
More informationData Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package
AT-85 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-85 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-85 is
More informationAT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Data Sheet
AT-86 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-86 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-86 is
More informationAT General Purpose, Low Current NPN Silicon Bipolar Transistor. Data Sheet
AT-4532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Avago s AT-4532 is a general purpose NPN bipolar transistor that has been optimized for maximum f t at low voltage
More informationRF CMOS 0.5 µm Low Noise Amplifier and Mixer Design
RF CMOS 0.5 µm Low Noise Amplifier and Mixer Design By VIKRAM JAYARAM, B.Tech Signal Processing and Communication Group & UMESH UTHAMAN, B.E Nanomil FINAL PROJECT Presented to Dr.Tim S Yao of Department
More informationDesign of mm-wave Injection Locking Power Amplifier. Student: Jiafu Lin Supervisor: Asst. Prof. Boon Chirn Chye
Design of mm-wave Injection Locking Power Amplifier Student: Jiafu Lin Supervisor: Asst. Prof. Boon Chirn Chye 1 Design Review Ref. Process Topology VDD (V) RFIC 2008[1] JSSC 2007[2] JSSC 2009[3] JSSC
More informationAspemyr, Lars; Jacobsson, Harald; Bao, Mingquan; Sjöland, Henrik; Ferndal, Mattias; Carchon, G
A 15 GHz and a 2 GHz low noise amplifier in 9 nm RF CMOS Aspemyr, Lars; Jacobsson, Harald; Bao, Mingquan; Sjöland, Henrik; Ferndal, Mattias; Carchon, G Published in: Topical Meeting on Silicon Monolithic
More informationApplication Note 1299
A Low Noise High Intercept Point Amplifier for 9 MHz Applications using ATF-54143 PHEMT Application Note 1299 1. Introduction The Avago Technologies ATF-54143 is a low noise enhancement mode PHEMT designed
More informationLow Noise Amplifier Design
THE UNIVERSITY OF TEXAS AT DALLAS DEPARTMENT OF ELECTRICAL ENGINEERING EERF 6330 RF Integrated Circuit Design (Spring 2016) Final Project Report on Low Noise Amplifier Design Submitted To: Dr. Kenneth
More informationCHAPTER 3 CMOS LOW NOISE AMPLIFIERS
46 CHAPTER 3 CMOS LOW NOISE AMPLIFIERS 3.1 INTRODUCTION The Low Noise Amplifier (LNA) plays an important role in the receiver design. LNA serves as the first block in the RF receiver. It is a critical
More informationAbove 200 GHz On-Chip CMOS Frequency Generation, Transmission and Receiving
Above 200 GHz On-Chip CMOS Frequency Generation, Transmission and Receiving Bassam Khamaisi and Eran Socher Department of Physical Electronics Faculty of Engineering Tel-Aviv University Outline Background
More informationA COMPACT WIDEBAND MATCHING 0.18-µM CMOS UWB LOW-NOISE AMPLIFIER USING ACTIVE FEED- BACK TECHNIQUE
Progress In Electromagnetics Research C, Vol. 16, 161 169, 2010 A COMPACT WIDEBAND MATCHING 0.18-µM CMOS UWB LOW-NOISE AMPLIFIER USING ACTIVE FEED- BACK TECHNIQUE J.-Y. Li, W.-J. Lin, and M.-P. Houng Department
More informationHigh Gain CMOS UWB LNA Employing Thermal Noise Cancellation
ICUWB 2009 (September 9-11, 2009) High Gain CMOS UWB LNA Employing Thermal Noise Cancellation Mehdi Forouzanfar and Sasan Naseh Electrical Engineering Group, Engineering Department, Ferdowsi University
More informationThe Design of E-band MMIC Amplifiers
The Design of E-band MMIC Amplifiers Liam Devlin, Stuart Glynn, Graham Pearson, Andy Dearn * Plextek Ltd, London Road, Great Chesterford, Essex, CB10 1NY, UK; (lmd@plextek.co.uk) Abstract The worldwide
More informationACMOS RF up/down converter would allow a considerable
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 32, NO. 7, JULY 1997 1151 Low Voltage Performance of a Microwave CMOS Gilbert Cell Mixer P. J. Sullivan, B. A. Xavier, and W. H. Ku Abstract This paper demonstrates
More informationMixer. General Considerations V RF VLO. Noise. nonlinear, R ON
007/Nov/7 Mixer General Considerations LO S M F F LO L Noise ( a) nonlinearity (b) Figure 6.5 (a) Simple switch used as mixer (b) implementation of switch with an NMOS device. espect to espect to It is
More informationDESCRIPTIO FEATURES APPLICATIO S. LT GHz to 2.7GHz Receiver Front End TYPICAL APPLICATIO
1.GHz to 2.GHz Receiver Front End FEATURES 1.V to 5.25V Supply Dual LNA Gain Setting: +13.5dB/ db at Double-Balanced Mixer Internal LO Buffer LNA Input Internally Matched Low Supply Current: 23mA Low Shutdown
More information30% PAE W-band InP Power Amplifiers using Sub-quarter-wavelength Baluns for Series-connected Power-combining
2013 IEEE Compound Semiconductor IC Symposium, October 13-15, Monterey, C 30% PAE W-band InP Power Amplifiers using Sub-quarter-wavelength Baluns for Series-connected Power-combining 1 H.C. Park, 1 S.
More informationGHz Broadband Low Noise Amplifier
.5 4. GHz Broadband Low Noise Amplifier Features Frequency Range:.5-4 GHz 1.8 db Mid-band Noise Figure 12.5 db Nominal Gain Very Low operating current (2V/15mA) Ideal Replacement for discrete devices 1dBm
More informationA Highly Compact 2.4GHz Passive 6-bit Phase Shifter with Ambidextrous Quadrant Selector
1 A Highly Compact 2.4GHz Passive 6-bit Phase Shifter with Ambidextrous Quadrant Selector Mackenzie Cook, Member, IEEE, John W. M. Rogers, Senior Member, IEEE Abstract An extremely compact architecture
More information1 MHz to 2.7 GHz RF Gain Block AD8354
Data Sheet FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply stable Noise figure: 4.2
More informationMultimode 2.4 GHz Front-End with Tunable g m -C Filter. Group 4: Nick Collins Trevor Hunter Joe Parent EECS 522 Winter 2010
Multimode 2.4 GHz Front-End with Tunable g m -C Filter Group 4: Nick Collins Trevor Hunter Joe Parent EECS 522 Winter 2010 Overview Introduction Complete System LNA Mixer Gm-C filter Conclusion Introduction
More informationA 3-6 Ghz Current Reuse Noise Cancelling Low Noise Amplifier For WLAN And WPAN Application
RESEARCH ARTICLE OPEN ACCESS A 3-6 Ghz Current Reuse Noise Cancelling Low Noise Amplifier For WLAN And WPAN Application Shivabhakt Mhalasakant Hanamant [1], Dr.S.D.Shirbahadurakar [2] M.E Student [1],
More informationTU3B-1. An 81 GHz, 470 mw, 1.1 mm 2 InP HBT Power Amplifier with 4:1 Series Power Combining using Sub-quarter-wavelength Baluns
TU3B-1 Student Paper Finalist An 81 GHz, 470 mw, 1.1 mm 2 InP HBT Power Amplifier with 4:1 Series Power Combining using Sub-quarter-wavelength Baluns H. Park 1, S. Daneshgar 1, J. C. Rode 1, Z. Griffith
More informationPART MAX2605EUT-T MAX2606EUT-T MAX2607EUT-T MAX2608EUT-T MAX2609EUT-T TOP VIEW IND GND. Maxim Integrated Products 1
19-1673; Rev 0a; 4/02 EVALUATION KIT MANUAL AVAILABLE 45MHz to 650MHz, Integrated IF General Description The are compact, high-performance intermediate-frequency (IF) voltage-controlled oscillators (VCOs)
More informationHot Topics and Cool Ideas in Scaled CMOS Analog Design
Engineering Insights 2006 Hot Topics and Cool Ideas in Scaled CMOS Analog Design C. Patrick Yue ECE, UCSB October 27, 2006 Slide 1 Our Research Focus High-speed analog and RF circuits Device modeling,
More informationNoise Analysis for low-voltage low-power CMOS RF low noise amplifier. Mai M. Goda, Mohammed K. Salama, Ahmed M. Soliman
International Journal of Scientific & Engineering Research, Volume 6, Issue 3, March-205 ISSN 2229-558 536 Noise Analysis for low-voltage low-power CMOS RF low noise amplifier Mai M. Goda, Mohammed K.
More informationHigh-Linearity CMOS. RF Front-End Circuits
High-Linearity CMOS RF Front-End Circuits Yongwang Ding Ramesh Harjani iigh-linearity CMOS tf Front-End Circuits - Springer Library of Congress Cataloging-in-Publication Data A C.I.P. Catalogue record
More informationCIRF Circuit Intégré Radio Fréquence. Low Noise Amplifier. Delaram Haghighitalab Hassan Aboushady Université Paris VI
CIRF Circuit Intégré Radio Fréquence Low Noise Amplifier Delaram Haghighitalab Hassan Aboushady Université Paris VI Multidisciplinarity of radio design H. Aboushady University of Paris VI References M.
More informationDesigning a 960 MHz CMOS LNA and Mixer using ADS. EE 5390 RFIC Design Michelle Montoya Alfredo Perez. April 15, 2004
Designing a 960 MHz CMOS LNA and Mixer using ADS EE 5390 RFIC Design Michelle Montoya Alfredo Perez April 15, 2004 The University of Texas at El Paso Dr Tim S. Yao ABSTRACT Two circuits satisfying the
More informationDesign and Implementation of a 1-5 GHz UWB Low Noise Amplifier in 0.18 um CMOS
Downloaded from vbn.aau.dk on: marts 20, 2019 Aalborg Universitet Design and Implementation of a 1-5 GHz UWB Low Noise Amplifier in 0.18 um CMOS Shen, Ming; Tong, Tian; Mikkelsen, Jan H.; Jensen, Ole Kiel;
More informationA low-power high-gain LNA for the 60GHz band in a 65 nm CMOS technology
A low-power high-gain LNA for the GHz band in a 5 nm CMOS technology Michael Kraemer, Daniela Dragomirescu, Robert Plana To cite this version: Michael Kraemer, Daniela Dragomirescu, Robert Plana. A low-power
More informationInsights Into Circuits for Frequency Synthesis at mm-waves Andrea Mazzanti Università di Pavia, Italy
RFIC2014, Tampa Bay June 1-3, 2014 Insights Into Circuits for Frequency Synthesis at mm-waves Andrea Mazzanti Università di Pavia, Italy High data rate wireless networks MAN / LAN PAN ~7GHz of unlicensed
More informationData Sheet. VMMK GHz Positive Gain Slope Low Noise Amplifier in SMT Package. Features. Description
VMMK-3603 1-6 GHz Positive Gain Slope Low Noise Amplifier in SMT Package Data Sheet Description The VMMK-3603 is a small and easy-to-use, broadband, positive gain slope low noise amplifier operating in
More informationNarrowband CMOS RF Low-Noise Amplifiers
Narrowband CMOS RF Low-Noise Amplifiers Prof. Thomas H. Lee Stanford University tomlee@ee.stanford.edu http://www-smirc.stanford.edu Outline A brief review of classic two-port noise optimization Conditions
More informationISSCC 2006 / SESSION 10 / mm-wave AND BEYOND / 10.1
10.1 A 77GHz 4-Element Phased Array Receiver with On-Chip Dipole Antennas in Silicon A. Babakhani, X. Guan, A. Komijani, A. Natarajan, A. Hajimiri California Institute of Technology, Pasadena, CA Achieving
More informationDocument Version Publisher s PDF, also known as Version of Record (includes final page, issue and volume numbers)
A 2V Iductorless Receiver Front-End for Multi-Standard Wireless Applications Vidojkovic, V; Sanduleanu, MAT; van der Tang, JD; Baltus, PGM; van Roermund, AHM Published in: IEEE Radio and Wireless Symposium,
More informationRF Noise Simulation for Submicron MOSFET s Based on Hydrodynamic Model
RF Noise Simulation for Submicron MOSFET s Based on Hydrodynamic Model Jung-Suk Goo, Chang-Hoon Choi, Eiji Morifuji, Hisayo Sasaki Momose, Zhiping Yu, Hiroshi Iwai, Thomas H. Lee, and Robert W. Dutton,
More informationA 24-GHz Quadrature Receiver Front-end in 90-nm CMOS
A 24GHz Quadrature Receiver Frontend in 90nm CMOS Törmänen, Markus; Sjöland, Henrik Published in: Proc. 2009 IEEE Asia Pacific Microwave Conference Published: 20090101 Link to publication Citation for
More informationLF to 4 GHz High Linearity Y-Mixer ADL5350
LF to GHz High Linearity Y-Mixer ADL535 FEATURES Broadband radio frequency (RF), intermediate frequency (IF), and local oscillator (LO) ports Conversion loss:. db Noise figure:.5 db High input IP3: 25
More informationEECS 290C: Advanced circuit design for wireless Class Final Project Due: Thu May/02/2019
EECS 290C: Advanced circuit design for wireless Class Final Project Due: Thu May/02/2019 Project: A fully integrated 2.4-2.5GHz Bluetooth receiver. The receiver has LNA, RF mixer, baseband complex filter,
More informationA 2.4 GHZ RECEIVER IN SILICON-ON-SAPPHIRE MICHAEL PETERS. B.S., Kansas State University, 2009 A REPORT
A 2.4 GHZ RECEIVER IN SILICON-ON-SAPPHIRE by MICHAEL PETERS B.S., Kansas State University, 2009 A REPORT submitted in partial fulfillment of the requirements for the degree MASTER OF SCIENCE Department
More informationHigh Gain Low Noise Amplifier Design Using Active Feedback
Chapter 6 High Gain Low Noise Amplifier Design Using Active Feedback In the previous two chapters, we have used passive feedback such as capacitor and inductor as feedback. This chapter deals with the
More information2.Circuits Design 2.1 Proposed balun LNA topology
3rd International Conference on Multimedia Technology(ICMT 013) Design of 500MHz Wideband RF Front-end Zhengqing Liu, Zhiqun Li + Institute of RF- & OE-ICs, Southeast University, Nanjing, 10096; School
More informationDesign technique of broadband CMOS LNA for DC 11 GHz SDR
Design technique of broadband CMOS LNA for DC 11 GHz SDR Anh Tuan Phan a) and Ronan Farrell Institute of Microelectronics and Wireless Systems, National University of Ireland Maynooth, Maynooth,Co. Kildare,
More informationWide-Band Two-Stage GaAs LNA for Radio Astronomy
Progress In Electromagnetics Research C, Vol. 56, 119 124, 215 Wide-Band Two-Stage GaAs LNA for Radio Astronomy Jim Kulyk 1,GeWu 2, Leonid Belostotski 2, *, and James W. Haslett 2 Abstract This paper presents
More informationCapacitive-Division Traveling-Wave Amplifier with 340 GHz Gain-Bandwidth Product
Hughes Presented at the 1995 IEEE MTT-S Symposium UCSB Capacitive-Division Traveling-Wave Amplifier with 340 GHz Gain-Bandwidth Product J. Pusl 1,2, B. Agarwal1, R. Pullela1, L. D. Nguyen 3, M. V. Le 3,
More informationRFIC DESIGN EXAMPLE: MIXER
APPENDIX RFI DESIGN EXAMPLE: MIXER The design of radio frequency integrated circuits (RFIs) is relatively complicated, involving many steps as mentioned in hapter 15, from the design of constituent circuit
More informationA 1.7-to-2.2GHz Full-Duplex Transceiver System with >50dB Self-Interference Cancellation over 42MHz Bandwidth
A 1.7-to-2.2GHz Full-Duplex Transceiver System with >50dB Self-Interference Cancellation Tong Zhang, Ali Najafi, Chenxin Su, Jacques C. Rudell University of Washington, Seattle Feb. 8, 2017 International
More informationSimulation and Design Analysis of Integrated Receiver System for Millimeter Wave Applications
Simulation and Design Analysis of Integrated Receiver System for Millimeter Wave Applications Rekha 1, Rajesh Kumar 2, Dr. Raj Kumar 3 M.R.K.I.E.T., REWARI ABSTRACT This paper presents the simulation and
More information20 GHz Low Power QVCO and De-skew Techniques in 0.13µm Digital CMOS. Masum Hossain & Tony Chan Carusone University of Toronto
20 GHz Low Power QVCO and De-skew Techniques in 0.13µm Digital CMOS Masum Hossain & Tony Chan Carusone University of Toronto masum@eecg.utoronto.ca Motivation Data Rx3 Rx2 D-FF D-FF Rx1 D-FF Clock Clock
More informationA 2.4GHz Fully Integrated CMOS Power Amplifier Using Capacitive Cross-Coupling
A 2.4GHz Fully Integrated CMOS Power Amplifier Using Capacitive Cross-Coupling JeeYoung Hong, Daisuke Imanishi, Kenichi Okada, and Akira Tokyo Institute of Technology, Japan Contents 1 Introduction PA
More information1 MHz to 2.7 GHz RF Gain Block AD8354
1 MHz to 2.7 GHz RF Gain Block AD834 FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply
More informationIF Digitally Controlled Variable-Gain Amplifier
19-2601; Rev 1; 2/04 IF Digitally Controlled Variable-Gain Amplifier General Description The high-performance, digitally controlled variable-gain amplifier is designed for use from 0MHz to 400MHz. The
More informationMulti-Finger MOSFET Low Noise Amplifier Performance Analysis
Wright State University CORE Scholar Browse all Theses and Dissertations Theses and Dissertations 2014 Multi-Finger MOSFET Low Noise Amplifier Performance Analysis Xiaomeng Zhang Wright State University
More informationRadio-Frequency Conversion and Synthesis (for a 115mW GPS Receiver)
Radio-Frequency Conversion and Synthesis (for a 115mW GPS Receiver) Arvin Shahani Stanford University Overview GPS Overview Frequency Conversion Frequency Synthesis Conclusion GPS Overview: Signal Structure
More informationDesign of low-loss 60 GHz integrated antenna switch in 65 nm CMOS
LETTER IEICE Electronics Express, Vol.15, No.7, 1 10 Design of low-loss 60 GHz integrated antenna switch in 65 nm CMOS Korkut Kaan Tokgoz a), Seitaro Kawai, Kenichi Okada, and Akira Matsuzawa Department
More informationCMOS 120 GHz Phase-Locked Loops Based on Two Different VCO Topologies
JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE, VOL. 17, NO. 2, 98~104, APR. 2017 http://dx.doi.org/10.5515/jkiees.2017.17.2.98 ISSN 2234-8395 (Online) ISSN 2234-8409 (Print) CMOS 120 GHz Phase-Locked
More informationTexas A&M University Electrical Engineering Department ECEN 665. Laboratory #4: Analysis and Simulation of a CMOS Mixer
Texas A&M University Electrical Engineering Department ECEN 665 Laboratory #4: Analysis and Simulation of a CMOS Mixer Objectives: To learn the use of periodic steady state (pss) simulation tools in spectre
More informationData Sheet. AMMC GHz Amplifier. Description. Features. Applications
AMMC - 518-2 GHz Amplifier Data Sheet Chip Size: 92 x 92 µm (.2 x.2 mils) Chip Size Tolerance: ± 1µm (±.4 mils) Chip Thickness: 1 ± 1µm (4 ±.4 mils) Pad Dimensions: 8 x 8 µm (.1 x.1 mils or larger) Description
More informationData Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power:
AT-1 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-1 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-1 is housed
More informationLow voltage topologies for 40-Gb/s circuits in nanoscale CMOS
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. XX, NO. XX, MONTH YEAR 1 Low voltage topologies for 40-Gb/s circuits in nanoscale CMOS Theodoros Chalvatzis, Student Member, IEEE, Kenneth H. K. Yau, Student
More informationPRELIMINARY DATASHEET
PRELIMINARY DATASHEET 25 43GHz Ultra Low Noise Amplifier DESCRIPTION The is a high performance GaAs Low Noise Amplifier MMIC designed to operate in the K band. The is 3 stages Single Supply LNA. It has
More information